ScienceDirect Alert: Solid-State Electronics, Vol. 60, Iss. 1, 2011

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Solid-State Electronics Volume 60, Issue 1,  Pages 1-138 (June 2011) Papers Selected from the 5th International SiGe Technology and Devices Meeting (ISTDM 2010) Edited by Mikael Ostling, B. Gunnar Malm and Henry H. Radamson Modify or Remove My Alerts

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Editorial Board    Page IFC

Editorial

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Foreword    Page 1 Mikael Östling, B. Gunnar Malm, Henry H. Radamson

Topical Area: Epitaxial Growth and Characterization

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Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD   Original Research Article Pages 2-6 Yuji Yamamoto, Peter Zaumseil, Tzanimir Arguirov, Martin Kittler, Bernd Tillack Graphical abstract Threading dislocation density as function of Ge thickness deposited with different annealing processes. AFM images of 4.7 μm thick Ge deposited without annealing process and Ge deposited with cyclic annealing process. Research highlights ► Smooth Ge layer growth on Si (1 0 0) surface without graded SiGe buffer is performed using RPCVD. ► Threading dislocation density (TDD) is decreased with increasing Ge thickness. ► TDD is decreased by postannealing and further decease is observed by cyclic annealing. ► TDD of 7 × 105 cm−2 without degrading surface roughness is achieved.

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Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth   Original Research Article Pages 7-12 Masashi Kurosawa, Kaoru Toko, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao Research highlights ► We report systematic study of Al-induced crystallization (AIC) of Si. ► We clarify AIC conditions to control preferential orientation, i.e., (1 0 0) or (1 1 1). ► We demonstrate epitaxial growth of Ge layers using AIC-Si templates.

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Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD   Original Research Article Pages 13-17 Oliver Skibitzki, Yuji Yamamoto, Markus Andreas Schubert, Günter Weidner, Bernd Tillack Graphical abstract Lateral length of crystallized epi-Si from amorphous Si on Si3N4/SiO2 mask by Solid-phase epitaxy (SPE) is investigated. 500 nm of crystallized epi-Si domain on the mask is formed by 575 °C postannealing. The defects in the crystallized epi-Si are reduced by following 1000°C annealing. Research highlights ► Solid-phase epitaxy (SPE) of amorphous Si on patterned Si(001) by RPCVD was studied. ► Lateral SPE length grew with increasing postannealing temperature. ► Lateral SPE length grew with increasing postannealing time and saturates after 1 h. ► ∼500 nm of amorphous Si on mask was crystallized to epitaxial Si (epi-Si) at 575°C. ► By 2nd postannealing at 1000°C, defects in crystalized epi-Si is drastically reduced.

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Growth-direction-dependent characteristics of Ge-on-insulator by Si–Ge mixing triggered melting growth   Original Research Article Pages 18-21 Y. Ohta, T. Tanaka, K. Toko, T. Sadoh, M. Miyao Research highlights ► Melting growth technique is investigated to obtain Ge layers on insulators (GOI). ► Growth-direction-dependent growth characteristics are clarified. ► Large area GOI with a mesh-pattern is demonstrated. ► This technique is useful to realize advanced transistors.

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Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds   Original Research Article Pages 22-25 T. Sakane, K. Toko, T. Tanaka, T. Sadoh, M. Miyao Highlights ► Melting growth of Ge layers on insulators (GOI) is investigated. ► Ni-imprint-induced Si (1 1 1) micro-crystals are employed as seed. ► Single-crystalline GOI (1 1 1) with large area (∼10 μmϕ) is realized. ► The tensile strain (∼0.2%) which enhances the carrier mobility is induced. ► This new method can be employed to realize the multi-functional SiGe LSI.

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X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(0 0 1) substrates   Original Research Article Pages 26-30 Kouhei Ebihara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Gang Wang, Matty Caymax, Yasuhiko Imai, Shigeru Kimura, Osami Sakata Research highlights ► Selective growth of Ge thin lines with widths of 100, 200, 500 and 1000 nm on Si substrates. ► Crystal domains with small tilt angles exist in the as-grown Ge lines for the four line widths. ► The tilt angle range of the domain is larger in thinner Ge lines. ► Single domain with a specific tilt angle exists in 100- and 200- nm width Ge lines after annealing. ► SiO2 side walls around the Ge thin lines can affect crystallinity and strain relaxation of Ge.

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Study of Arsenic ion implantation of patterned strained Si NWs   Original Research Article Pages 31-36 R.A. Minamisawa, S. Habicht, L. Knoll, Q.T. Zhao, D. Buca, S. Mantl, F. Köhler, R. Carius Research highlights ► The formation of highly doped strained Si NWs and layers on insulator is presented. ► Patterning of doped layers results in perfect crystalline doped strained Si NWs. ► Direct implantation of NWs at RT induces strong strain relaxation. ► Elastic strain is conserved by high temperature implantation. ► Dopant out-diffusion occurs during direct implantation of NWs.

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Subband structure and effective mass of relaxed and strained Ge (1 1 0) PMOSFETs   Original Research Article Pages 37-41 Bing-Fong Hsieh, Shu-Tong Chang Research highlights ► Simple and useful effective mass information for quasi two dimension hole transport. ► A new guideline for a novel CMOS design. ► Impact of (1 1 0) surface orientation on hole transport in a Ge inversion layer.

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Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity   Original Research Article Pages 42-45 Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, D.R. Leadley Graphical abstract Highlights ► High-resolution X-ray diffraction rocking curve (RC), X-ray reflectivity (XRR) and transmission electron microscopy (TEM) are used to characterize the Si based heterostructures. The reliability and accuracy of thickness measurement are analysed by the different techniques. ► Both XRR and RC produce reliable values that agree well with transmission electron microscope (TEM) results over a wide range for smooth Si epilayers grown on a thin (20 nm) strained Si0.9Ge0.1 buffer. The best-fit thickness from both XRR and RC is within ±5% of the TEM measurement, with XRR producing more accurate values than RC. ► The agreement is not good for rough Si epilayer grown on a thick (2 μm) relaxed Si07Ge0.3 virtual substrate due to the presence of rough surface.

Topical Area: Device Related Materials

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Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems   Original Research Article Pages 46-52 Tsuyoshi Nishimura, Osamu Nakatsuka, Yosuke Shimura, Shotaro Takeuchi, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, Shigeaki Zaima Research highlights ► Formation of nickel-tin-germanide contacts for germanium-tin source/drain stressors. ► Reaction products after the solid phase reaction of Ni/Ge1−xSnx systems with various Sn contents. ► Sn precipitation from Ni(Ge1−xSnx) layers with annealing. ► Agglomeration behavior of Ni(Ge1−xSnx) layers on Ge1−xSnx layers. ► Strain behavior of Ge1−xSnx layers after the germanidation process for contact formation.

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Ge1−xSnx stressors for strained-Ge CMOS   Original Research Article Pages 53-57 S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, A. Sakai, O. Nakatsuka, S. Zaima Research highlights ► GeSn materials have potential for strained Ge pMOSFET. ► p-type doped GeSn growth and Ni(GeSn) formation which can be used in the source/drain area have been successfully demonstrated. ► These layer qualities strongly depends on thermal budget.

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Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress   Original Research Article Pages 58-64 Thanh Viet Dinh, Sung-Min Hong, Christoph Jungemann Research highlights ► A global additional uniaxial stress ranging from −1 GPa to 1 GPa has been applied to SiGe HBTs including a slow one (peak fT = 110 GHz) and a fast one (peak fT = 750 GHz). ► Full-band Monte Carlo and spherical-harmonics-expansion simulators have been used together to investigate such stressed devices. ► The simulation results show that the cutoff frequency of both devices can be improved by more than 30 percent under suitable stress conditions. ► The transit times at all regions (base, collector, emitter) of these HBTs are reduced.

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High-density formation of Ge quantum dots on SiO2   Original Research Article Pages 65-69 Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, Shotaro Takeuchi, Yosuke Shimura, Shigeaki Zaima, Seiichi Miyazaki Research highlights ► We formed high-density Ge-QDs on an ultrathin SiO2 layer by controlling the early stages of LPCVD with GeH4 assisted by a remote H2 plasma. ► Hydrogen radicals play roles in both creation of nucleation sites on OH-terminated SiO2 surfaces and in decomposition of GeH4 to generate the precursors of Ge-QDs. ► The surface potential of the dots changed in a stepwise manner with respect to the tip bias due to multistep electron injection into and extraction from the Ge-QDs. ► These results provide useful information for the fabrication of multi-valued floating gate memories.

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Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen   Original Research Article Pages 70-74 Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima Research highlights ► Controlling interfacial properties of Pr-oxide/Ge structures by the introduction of nitrogen. ► Nitrogen component segregates at the Pr-oxide/Ge interface. ► Formation of Pr-oxide/PrON/Ge structures without Ge-oxide or Ge-oxynitride interlayer. ► Interface state density as low as 4 × 1011 eV−1 cm−2.

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Integration of MOSFETs with SiGe dots as stressor material   Original Research Article Pages 75-83 L.K. Nanver, V. Jovanović, C. Biasotto, J. Moers, D. Grützmacher, J.J. Zhang, N. Hrauda, M. Stoffel, F. Pezzoli, O.G. Schmidt, L. Miglio, H. Kosina, A. Marzegalli, G. Vastola, G. Mussler, J. Stangl, G. Bauer, J. van der Cingel, E. Bonera Highlights ► DotFETs – first experimental n-channel MOSFETs fabricated on SiGe dots. ► SiGe dots grown in an S–K mode used as source of stress for mobility enhancement. ► Low-complexity, custom-made low-temperature (Tmax = 400 °C) process. ► Laser-annealed source/drain regions self-aligned to gate. ► Average increase in drain current up to 22.5%.

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Control of strain relaxation behavior of Ge1−xSnx buffer layers   Original Research Article Pages 84-88 Yosuke Shimura, Shotaro Takeuchi, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima Research highlights ► Control of strain relaxation behavior in Ge1-xSnx layers by the misfit strain. ► Dependence of crystallinity of Ge1-xSnx layers on the misfit strain. ► Fully strain relaxed Ge1-xSnx layer with Sn content of 9.2% grown on a Si substrate. ► The Ge1-xSnx layer having a potential to induce a tensile strain of 0.99% to a Ge layer.

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Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs   Original Research Article Pages 89-92 Yoshihiko Moriyama, Yuuichi Kamimuta, Keiji Ikeda, Tsutomu Tezuka Highlights ► Uni-axial tensile strain is applied to Ge for high-mobility Ge-nMOSFETs. ► Anisotropic wet etching for damage-less Ge recess formation. ► Sufficient strain over 1% in Ge for 4 times higher electron-mobility than Si.

Topical Area: Opto-electronic and Novel Devices

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Double-polysilicon SiGe HBT architecture with lateral base link   Original Research Article Pages 93-99 A. Fox, B. Heinemann, H. Rücker Research highlights ► We present a novel double polysilicon SiGe HBT technology. ► We achieve fT/fmax of 300GHz/350GHz and a ring oscillator gate delay of 2.5ps. ► Technological challenges for further device scaling are adressed.

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SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays   Original Research Article Pages 100-104 J.Y. Andersson, P. Ericsson, H.H. Radamson, S.G.E. Wissmar, M. Kolahdouz Research highlights ► Monocrystalline SiGe/Si superlattices are suggested as a thermistors for infrared bolometers. ► Proper design of a SiGe/Si superlattices enables sensing with high signal-to-noise ratio. ► SiGe is compatible with microelectronics processing enabling manufacturing at lower cost.

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Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells   Original Research Article Pages 105-111 M. Kaschel, M. Schmid, M. Oehme, J. Werner, J. Schulze Research highlights ► We successfully fabricated vertical Germanium pin photodetectors in Silicon wells by using differential molecular beam epitaxy and chemical mechanical polishing. ► As the electrical properties indicate, the grown layers have a good crystal quality and external cut-off frequencies of over 20 GHz are achieved. ► The measured broad spectral range and the energy of the direct band edge leads to the conclusion that the new process does not increase the strain in the active Germanium absorption layer compared to conventional fabricated detectors.

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Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers   Original Research Article Pages 112-115 Kuniaki Takahashi, Masao Sakuraba, Junichi Murota Research highlights ► Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diodes. ► Low-temperature Si barrier growth with atomically flat heterointerfaces. ► Si2H6 reaction at 400 °C on Si0.42Ge0.58 in low-pressure chemical vapor deposition. ► Improvement in negative differential conductance characteristics at room temperature. ► Thermionic-emission dominant characteristics at higher temperatures above 100 K.

Topical Area: Process Technology

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Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions   Original Research Article Pages 116-121 B. Vincent, R. Loo, W. Vandervorst, J. Delmotte, B. Douhard, V.K. Valev, M. Vanbel, T. Verbiest, J. Rip, B. Brijs, T. Conard, C. Claypool, S. Takeuchi, S. Zaima, J. Mitard, B. De Jaeger, J. Dekoster, M. Caymax Research highlights ► Impact of Si cap Ge passivation pn Ge pMOSFETs performances. ► Impact of RPCVD Si growth process conditions on Si crystallinity and Ge segregation. ► Offers the best route for Ge passivation.

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Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering   Original Research Article Pages 122-127 Kana Hirayama, Keisuke Yoshino, Ryuji Ueno, Yoshiaki Iwamura, Haigui Yang, Dong Wang, Hiroshi Nakashima Research highlights ► We fabricated Ge-MOS capacitors by SiO2/GeO2 bi-layer passivation for Ge surface. ► We obtained good C–VG and J–E characteristics for typical Ge-MOS capacitors. ► We obtained Dit of 4 × 1011 cm−2 eV−1 at around mid-gap for Al-gate Ge-MOS capacitor. ► Bi-layer passivation with O2 improves interface quality for Ge-MOS gate stack.

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Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing   Original Research Article Pages 128-133 Haigui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima Research highlights ► Al2O3-PDA was proposed to passivate electrically active defects in Ge-rich SGOI. ► Al2O3-PDA effectively suppressed the surface reaction during Al-PDA. ► Al2O3-PDA reduced the defect-induced acceptor concentration in Ge-rich SGOI. ► Al2O3-PDA greatly improves the electrical characteristics of Ge-rich SGOI.

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Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate   Original Research Article Pages 134-138 Carsten Reichel, Stephan Kronholz, Thorsten Kammler, Annekathrin Zeun, Gunda Beernink Research highlights ► A SiGe epi layer in the P-channel is applied to modulate VT. ► This results in an unwanted elevation of P-channel. ► In-situ HCl etching prior to epi deposition reduces topography. ► Topography driven leakage current has been reduced by one order of magnitude.

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ScienceDirect Topic Alert: Nanoscience and Technology

Topic Alert: 45 New articles Available on ScienceDirect

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Hexagonal nanorods of tungsten trioxide: synthesis, structure, electrochemical properties and activity as supporting material in electrocatalysis   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 27 April 2011 Samiha Salmaoui, Faouzi Sediri, Néji Gharbi, Christian Perruchot, Salah Aeiyach, Iwona A. Rutkowska, Pawel J. Kulesza, Mohamed Jouini     21. ZnO nanoparticles produced by reactive laser ablation   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 27 April 2011 V.V. Gafiychuk, B.K. Ostafiychuk, D.I. Popovych, I.D. Popovych, A.S. Serednytski     22. Novel urchin-like Pd nanostructures prepared by a simple replacement reaction and their catalytic properties   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 27 April 2011 Zhipeng Cheng, Jiming Xu, Hui Zhong, XiaoZhong Chu, Juan Song     23. Effects of Platinum Nano Electrodeposits on Corrosion of Carbon Substrate   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 27 April 2011 Won-Jin Beom, R.S. Kalubarme, Kwi-Sub Yun, Chan-Jin Park     24. Analyses of residual iron in carbon nanotubes produced by camphor/ferrocene pyrolysis and purified by high temperature annealing   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 27 April 2011 E.F. Antunes, V.G. de Resende, U.A. Mengui, J.B.M. Cunha, E.J. Corat, M. Massi     25. Nanocrystalline hard chromium electrodeposition from trivalent chromium bath containing carbamide and formic acid: Structure, composition, electrochemical corrosion behavior, hardness and wear characteristics of deposits   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 27 April 2011 F.I. Danilov, V.S. Protsenko, V.O. Gordiienko, S.C. Kwon, J.Y. Lee, M. Kim

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Table of Contents Alert for Applied Physics Letters

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Cover image from Shigeru Nakayama, Satomi Ishida, Satoshi Iwamoto, and Yasuhiko Arakawa, Appl. Phys. Lett. 98, 171102 (2011). Enlarge the Image | Read the Article

Applied Physics Letters -- 25 April 2011

Volume 98, Issue 17 , Articles (17xxxx)

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LASERS, OPTICS, AND OPTOELECTRONICS
	Enhanced protein binding on femtosecond laser ablated poly(methyl methacrylate) surfaces Xiaodong Ma, Haibin Huo, Ming Wei, Lingling Wang, Mengyan Shen, Carol Barry, and Joey Mead Appl. Phys. Lett. 98, 171101 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (965 kB)  ]    Order
	Effect of cavity mode volume on photoluminescence from silicon photonic crystal nanocavities Shigeru Nakayama, Satomi Ishida, Satoshi Iwamoto, and Yasuhiko Arakawa Appl. Phys. Lett. 98, 171102 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (799 kB)  ]    Order
	Low-threshold green laser heterostructures with Zn(Mg)SSe/ZnSe graded-index superlattice waveguide: Structural and optical properties I. V. Sedova, E. V. Lutsenko, S. V. Gronin, S. V. Sorokin, A. G. Vainilovich, A. A. Sitnikova, G. P. Yablonskii, A. Alyamani, D. L. Fedorov, P. S. Kop'ev, and S. V. Ivanov Appl. Phys. Lett. 98, 171103 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (279 kB)  ]    Order
	Three-dimensional surface profiling and optical characterization of liquid microlens using a Shack–Hartmann wave front sensor Chenhui Li, Gunnsteinn Hall, Xuefeng Zeng, Difeng Zhu, Kevin Eliceiri, and Hongrui Jiang Appl. Phys. Lett. 98, 171104 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1426 kB)  ]    Order
	An ultrafast quantum random number generator with provably bounded output bias based on photon arrival time measurements Michael Wahl, Matthias Leifgen, Michael Berlin, Tino Röhlicke, Hans-Jürgen Rahn, and Oliver Benson Appl. Phys. Lett. 98, 171105 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (99 kB)  ]    Order
	Manipulation of multidimensional plasmonic spectra for information storage Wei Ting Chen, Pin Chieh Wu, Chen Jung Chen, Chun-Jen Weng, Hsin-Chen Lee, Ta-Jen Yen, Chieh-Hsiung Kuan, Masud Mansuripur, and Din Ping Tsai Appl. Phys. Lett. 98, 171106 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (958 kB)  ]    Order
	Structured scintillator for hard x-ray grating interferometry Simon Rutishauser, Irene Zanette, Tilman Donath, Anna Sahlholm, Jan Linnros, and Christian David Appl. Phys. Lett. 98, 171107 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (366 kB)  ]    Order
	Detailed balance limit of the efficiency of multilevel intermediate band solar cells Tomohiro Nozawa and Yasuhiko Arakawa Appl. Phys. Lett. 98, 171108 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (698 kB)  ]    Order
	Enhancement of nonreciprocal phase shift by magneto-optical slot waveguide with a compensation wall Wenfu Zhang, Jian-Wei Mu, Wei-Ping Huang, and Wei Zhao Appl. Phys. Lett. 98, 171109 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (430 kB)  ]    Order
	Statistical optoacoustic image reconstruction using a-priori knowledge on the location of acoustic distortions X. Luís Deán-Ben, Vasilis Ntziachristos, and Daniel Razansky Appl. Phys. Lett. 98, 171110 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (531 kB)  ]    Order
	Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes Jing Zhang, Hongping Zhao, and Nelson Tansu Appl. Phys. Lett. 98, 171111 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1335 kB)  ]    Order
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
	Nanometer-scale epitaxial strain release in perovskite heterostructures using “SrAlOx” sliding buffer layers H. K. Sato, J. A. Mundy, T. Higuchi, Y. Hikita, C. Bell, D. A. Muller, and H. Y. Hwang Appl. Phys. Lett. 98, 171901 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (706 kB)  ]    Order
	Direct determination of flat-band voltage for metal/high oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation C.-L. Chang, W. C. Lee, L. K. Chu, M. Hong, J. Kwo, and Y.-M. Chang Appl. Phys. Lett. 98, 171902 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (376 kB)  ]    Order
	In situ probing of helium desorption from individual nanobubbles under electron irradiation M.-L. David, F. Pailloux, V. Mauchamp, and L. Pizzagalli Appl. Phys. Lett. 98, 171903 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (547 kB)  ]    Order
	Saturable absorbing dynamics of GaInN multiquantum well structures Takao Miyajima, Shunsuke Kono, Hideki Watanabe, Tomoyuki Oki, Rintaro Koda, Masaru Kuramoto, Masao Ikeda, and Hiroyuki Yokoyama Appl. Phys. Lett. 98, 171904 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (102 kB)  ]    Order
	In search of energy landscape for network glasses Roman Golovchak, Andriy Kovalskiy, Oleh Shpotyuk, and Himanshu Jain Appl. Phys. Lett. 98, 171905 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (720 kB)  ]    Order
	Light-induced structural changes in Eu-doped (Pb,La)(Zr,Ti)O3 ceramics Thandar Myint, Ray Gunawidjaja, and Hergen Eilers Appl. Phys. Lett. 98, 171906 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (407 kB)  ]    Order
	Observation of slow-light in a metamaterials waveguide at microwave frequencies Salvatore Savo, B. D. F. Casse, Wentao Lu (陆文韬), and Srinivas Sridhar Appl. Phys. Lett. 98, 171907 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (459 kB)  ]    Order
	Observation of surface-guided waves in holey hypersonic phononic crystal Sarah Benchabane, Olivier Gaiffe, Gwenn Ulliac, Roland Salut, Younes Achaoui, and Vincent Laude Appl. Phys. Lett. 98, 171908 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (2061 kB)  ]    Order
	Quality factor in clamping loss of nanocantilever resonators Jin Hwan Ko, Joonho Jeong, Jinbok Choi, and Maenghyo Cho Appl. Phys. Lett. 98, 171909 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (628 kB)  ]    Order
	Metallic characteristics in superlattices composed of insulators, NdMnO3/SrMnO3/LaMnO3 J. W. Seo, B. T. Phan, J. Lee, H.-D. Kim, and C. Panagopoulos Appl. Phys. Lett. 98, 171910 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (634 kB)  ]    Order
	Focusing of the lowest antisymmetric Lamb wave in a gradient-index phononic crystal plate Tsung-Tsong Wu, Yan-Ting Chen, Jia-Hong Sun, Sz-Chin Steven Lin, and Tony Jun Huang Appl. Phys. Lett. 98, 171911 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (642 kB)  ]    Order
	A way to determine the permittivity of metallized surfaces at terahertz frequencies V. V. Gerasimov, B. A. Knyazev, A. K. Nikitin, and G. N. Zhizhin Appl. Phys. Lett. 98, 171912 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (529 kB)  ]    Order
	High resolution study of the strong diamond/silicon nitride interface F. A. Almeida, F. J. Oliveira, R. F. Silva, D. L. Baptista, S. B. Peripolli, and C. A. Achete Appl. Phys. Lett. 98, 171913 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1248 kB)  ]    Order
	Polarization analysis of luminescence for the characterization of silicon wafer solar cells Matthew P. Peloso, Bram Hoex, and Armin G. Aberle Appl. Phys. Lett. 98, 171914 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (938 kB)  ]    Order
	A topological point defect regulates the evolution of extended defects in irradiated silicon Hyoungki Park and John W. Wilkins Appl. Phys. Lett. 98, 171915 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (170 kB)  ]    Order
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
	Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment Oliver Bierwagen, James S. Speck, Takahiro Nagata, Toyohiro Chikyow, Yoshiyuki Yamashita, Hideki Yoshikawa, and Keisuke Kobayashi Appl. Phys. Lett. 98, 172101 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (193 kB)  ]    Order
	Tuning Fano-type resonances in coupled quantum point contacts by applying asymmetric voltages Rubén C. Villarreal, Francisco Mireles, Ernesto E. Marinero, and Bruce A. Gurney Appl. Phys. Lett. 98, 172102 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (632 kB)  ]    Order
	Effects of interwall interaction on the electrical conductance at the junction between a double-walled carbon nanotube and copper electrodes Feng Gao, Jianmin Qu, and Matthew Yao Appl. Phys. Lett. 98, 172103 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (705 kB)  ]    Order
	High-temperature thermoelectric properties of Cu2Ga4Te7 with defect zinc-blende structure Theerayuth Plirdpring, Ken Kurosaki, Atsuko Kosuga, Manabu Ishimaru, Adul Harnwunggmoung, Tohru Sugahara, Yuji Ohishi, Hiroaki Muta, and Shinsuke Yamanaka Appl. Phys. Lett. 98, 172104 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (592 kB)  ]    Order
	Quantum magnetoresistance of the PrFeAsO oxypnictide D. Bhoi, P. Mandal, P. Choudhury, S. Pandya, and V. Ganesan Appl. Phys. Lett. 98, 172105 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (194 kB)  ]    Order
	Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance Ze Yuan, Aneesh Nainani, Yun Sun, J.-Y. Jason Lin, Piero Pianetta, and Krishna C. Saraswat Appl. Phys. Lett. 98, 172106 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (522 kB)  ]    Order
	Rectifying behavior in La2/3Sr1/3MnO3/MgO/SrRuO3 magnetic tunnel junctions Hongguang Cheng, Zuli Liu, and Kailun Yao Appl. Phys. Lett. 98, 172107 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (741 kB)  ]    Order
MAGNETISM AND SUPERCONDUCTIVITY
	Room-temperature spin-dependent tunneling through molecules S. Wang, F. J. Yue, J. Shi, Y. J. Shi, A. Hu, Y. W. Du, and D. Wu Appl. Phys. Lett. 98, 172501 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (472 kB)  ]    Order
	[Co/Pd]–NiFe exchange springs with tunable magnetization tilt angle T. N. Anh Nguyen, Y. Fang, V. Fallahi, N. Benatmane, S. M. Mohseni, R. K. Dumas, and Johan Åkerman Appl. Phys. Lett. 98, 172502 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (682 kB)  ]    Order
	Ferrimagnetic stripe domain formation in antiferromagnetically-coupled Co/Pt–Co/Ni–Co/Pt multilayers studied via soft x-ray techniques O. Hellwig, C. M. Günther, F. Radu, A. Menzel, W. F. Schlotter, J. Lüning, and S. Eisebitt Appl. Phys. Lett. 98, 172503 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (300 kB)  ]    Order
	Optimized design of a low-resistance electrical conductor for the multimegahertz range André Kurs, Morris Kesler, and Steven G. Johnson Appl. Phys. Lett. 98, 172504 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (758 kB)  ]    Order
	Tuning magnetocaloric effect with nanocrystallite size S. P. Mathew and S. N. Kaul Appl. Phys. Lett. 98, 172505 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (299 kB)  ]    Order
	Influence of ion irradiation on switching field and switching field distribution in arrays of Co/Pd-based bit pattern media T. Hauet, O. Hellwig, S.-H. Park, C. Beigné, E. Dobisz, B. D. Terris, and D. Ravelosona Appl. Phys. Lett. 98, 172506 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (585 kB)  ]    Order
	Electric-field control of phase separation and memory effect in Pr0.6Ca0.4MnO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures Q. P. Chen, J. J. Yang, Y. G. Zhao, S. Zhang, J. W. Wang, M. H. Zhu, Y. Yu, X. Z. Zhang, Zhu Wang, Bin Yang, D. Xie, and T. L. Ren Appl. Phys. Lett. 98, 172507 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (379 kB)  ]    Order
	Observation of spin wave modes depending on a tunable periodic magnetic field Lihui Bai, Makoto Kohda, and Junsaku Nitta Appl. Phys. Lett. 98, 172508 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (855 kB)  ]    Order
	Giant reversible anisotropic magnetocaloric effect in an antiferromagnetic EuFe2As2 single crystal M. S. Kim, N. H. Sung, Yoonkook Son, M. S. Ko, and B. K. Cho Appl. Phys. Lett. 98, 172509 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (320 kB)  ]    Order
	Single crystal silicon capacitors with low microwave loss in the single photon regime S. J. Weber, K. W. Murch, D. H. Slichter, R. Vijay, and I. Siddiqi Appl. Phys. Lett. 98, 172510 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (241 kB)  ]    Order
DIELECTRICS AND FERROELECTRICITY
	Electronic and structural properties of the oxygen vacancy in BaTiO3 Minseok Choi, Fumiyasu Oba, and Isao Tanaka Appl. Phys. Lett. 98, 172901 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (259 kB)  ]    Order
	Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si S. Shen, Y. Liu, R. G. Gordon, and L. J. Brillson Appl. Phys. Lett. 98, 172902 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (713 kB)  ]    Order
	Nanometer scale study of HfO2 trap states using single electron tunneling force spectroscopy D. W. Winslow, J. P. Johnson, and C. C. Williams Appl. Phys. Lett. 98, 172903 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (420 kB)  ]    Order
NANOSCALE SCIENCE AND DESIGN
	Li-doped B2C graphene as potential hydrogen storage medium Hui An, Chun-sheng Liu, Zhi Zeng, Chao Fan, and Xin Ju Appl. Phys. Lett. 98, 173101 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (466 kB)  ]    Order
	Graphyne- and graphdiyne-based nanoribbons: Density functional theory calculations of electronic structures L. D. Pan, L. Z. Zhang, B. Q. Song, S. X. Du, and H.-J. Gao Appl. Phys. Lett. 98, 173102 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1126 kB)  ]    Order
	Effect of surface passivation on dopant distribution in Si quantum dots: The case of B and P doping Jie Ma, Su-Huai Wei, Nathan R. Neale, and Arthur J. Nozik Appl. Phys. Lett. 98, 173103 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (343 kB)  ]    Order
	Strong coupling between a photonic crystal nanobeam cavity and a single quantum dot Ryuichi Ohta, Yasutomo Ota, Masahiro Nomura, Naoto Kumagai, Satomi Ishida, Satoshi Iwamoto, and Yasuhiko Arakawa Appl. Phys. Lett. 98, 173104 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (727 kB)  ]    Order
	Electrical current mediated interconversion between graphene oxide to reduced grapene oxide H. F. Teoh, Y. Tao, E. S. Tok, G. W. Ho, and C. H. Sow Appl. Phys. Lett. 98, 173105 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (924 kB)  ]    Order
	Strain balanced quantum posts D. Alonso-Álvarez, B. Alén, J. M. Ripalda, J. M. Llorens, A. G. Taboada, F. Briones, M. A. Roldán, J. Hernández-Saz, D. Hernández-Maldonado, M. Herrera, and S. I. Molina Appl. Phys. Lett. 98, 173106 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (655 kB)  ]    Order
	Ballistic thermoelectricity in double-bend nanowires Jun Zhou and Ronggui Yang Appl. Phys. Lett. 98, 173107 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (410 kB)  ]    Order
	Formation of graphene sheets through laser exfoliation of highly ordered pyrolytic graphite Min Qian, Yun Shen Zhou, Yang Gao, Jong Bok Park, Tao Feng, Su Mei Huang, Zhuo Sun, Lan Jiang, and Yong Feng Lu Appl. Phys. Lett. 98, 173108 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1220 kB)  ]    Order
	Three-dimensional mapping of nickel oxidation states using full field x-ray absorption near edge structure nanotomography George J. Nelson, William M. Harris, John R. Izzo, Jr., Kyle N. Grew, Wilson K. S. Chiu, Yong S. Chu, Jaemock Yi, Joy C. Andrews, Yijin Liu, and Piero Pianetta Appl. Phys. Lett. 98, 173109 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (841 kB)  ]    Order
	Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes Kaigui Zhu, Wu Wang, Qingyi Shao, Dongning Zhao, Yongfeng Lu, and Natale Ianno Appl. Phys. Lett. 98, 173110 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (583 kB)  ]    Order
	Plasmonic interferences in two-dimensional stacked double-disk array Zong-Suo Zhang, Zhong-Jian Yang, Jian-Bo Li, Zhong-Hua Hao, and Qu-Quan Wang Appl. Phys. Lett. 98, 173111 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (479 kB)  ]    Order
	Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates L. Seravalli, G. Trevisi, P. Frigeri, D. Rivas, G. Muñoz-Matutano, I. Suárez, B. Alén, J. Canet, and J. P. Martínez-Pastor Appl. Phys. Lett. 98, 173112 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (410 kB)  ]    Order
ORGANIC ELECTRONICS AND PHOTONICS
	A simple parallel tandem organic solar cell based on metallophthalocyanines Avery P. Yuen, Ah-Mee Hor, John S. Preston, Richard Klenkler, Nathan M. Bamsey, and Rafik O. Loutfy Appl. Phys. Lett. 98, 173301 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (177 kB)  ]
	Enhancement of current injection in organic light emitting diodes with sputter treated molybdenum oxides as hole injection layers Po-Sheng Wang, I-Wen Wu, Wei-Hsuan Tseng, Mei-Hsin Chen, and Chih-I Wu Appl. Phys. Lett. 98, 173302 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (493 kB)  ]
	Homogeneous dispersion of organic p-dopants in an organic semiconductor as an origin of high charge generation efficiency Jae-Hyun Lee, Hyun-Mi Kim, Ki-Bum Kim, Ryota Kabe, Pavel Anzenbacher, Jr., and Jang-Joo Kim Appl. Phys. Lett. 98, 173303 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (719 kB)  ]
	Employing exciton transfer molecules to increase the lifetime of phosphorescent red organic light emitting diodes Florian Lindla, Manuel Boesing, Philipp van Gemmern, Dietrich Bertram, Dietmar Keiper, Michael Heuken, Holger Kalisch, and Rolf H. Jansen Appl. Phys. Lett. 98, 173304 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (313 kB)  ]
	The conducting polymer/polymer interface R. M. Gadiev, A. N. Lachinov, R. B. Salikhov, R. G. Rakhmeev, V. M. Kornilov, and A. R. Yusupov Appl. Phys. Lett. 98, 173305 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (360 kB)  ]
	Electrical switching behavior from all-polymer-based system of semiconductor/ferroelectrics/semiconductor Yun Li, Chuan Liu, Lijia Pan, Lin Pu, Henning Sirringhaus, and Yi Shi Appl. Phys. Lett. 98, 173306 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (933 kB)  ]
DEVICE PHYSICS
	Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations Mincheol Shin, Yongjin Park, Ki-jeong Kong, and Hyunju Chang Appl. Phys. Lett. 98, 173501 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (160 kB)  ]    Order
	Mechanical analysis and optimization of a microcantilever sensor coated with a solid receptor film Genki Yoshikawa Appl. Phys. Lett. 98, 173502 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (324 kB)  ]    Order
	Atomistic approach to alloy scattering in Si1−xGex Saumitra R. Mehrotra, Abhijeet Paul, and Gerhard Klimeck Appl. Phys. Lett. 98, 173503 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (406 kB)  ]    Order
	In-line absorption sensor based on coiled optical microfiber Roberto Lorenzi, Yongmin Jung, and Gilberto Brambilla Appl. Phys. Lett. 98, 173504 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (157 kB)  ]    Order
	Crystallized HfLaO embedded tetragonal ZrO2 for dynamic random access memory capacitor dielectrics Yunsang Shin, Kyung Kyu Min, Seok-Hee Lee, Sung Kyu Lim, Jae Sub Oh, Kee-Jeung Lee, Kwon Hong, and Byung Jin Cho Appl. Phys. Lett. 98, 173505 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (672 kB)  ]    Order
	23 GHz ferroelectric electron gun based gyrotron R. Ben-Moshe and M. Einat Appl. Phys. Lett. 98, 173506 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (340 kB)  ]    Order
	Resistance switching and white-light photovoltaic effects in BiFeO3/Nb–SrTiO3 heterojunctions T. L. Qu, Y. G. Zhao, D. Xie, J. P. Shi, Q. P. Chen, and T. L. Ren Appl. Phys. Lett. 98, 173507 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (560 kB)  ]    Order
	Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors Lihua Fu, Hai Lu, Dunjun Chen, Rong Zhang, Youdou Zheng, Tangsheng Chen, Ke Wei, and Xinyu Liu Appl. Phys. Lett. 98, 173508 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (488 kB)  ]    Order
	Influence of anisotropic light-hole band structure on indirect tunneling in silicon Edward Chen and Dee-Son Pan Appl. Phys. Lett. 98, 173509 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (85 kB)  ]    Order
BIOPHYSICS AND BIO-INSPIRED SYSTEMS
	Whole field decoupling of predistortion on polymeric cell force transducer Xiaoyu Zheng and Xin Zhang Appl. Phys. Lett. 98, 173701 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (627 kB)  ]    Order
	ZnO thin film transistor immunosensor with high sensitivity and selectivity Pavel Ivanoff Reyes, Chieh-Jen Ku, Ziqing Duan, Yicheng Lu, Aniruddh Solanki, and Ki-Bum Lee Appl. Phys. Lett. 98, 173702 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (479 kB)  ]    Order
INTERDISCIPLINARY AND GENERAL PHYSICS
	Design and synthesis of superhydrophobic carbon nanofiber composite coatings for terahertz frequency shielding and attenuation Arindam Das, Constantine M. Megaridis, Lei Liu, Tao Wang, and Abhijit Biswas Appl. Phys. Lett. 98, 174101 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1088 kB)  ]    Order
	Reaction-diffusion analysis for one-step plasma etching and bonding of microfluidic devices Michel Rosso, Volkert van Steijn, Louis C. P. M. de Smet, Ernst J. R. Sudhölter, Chris R. Kleijn, and Michiel T. Kreutzer Appl. Phys. Lett. 98, 174102 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (292 kB)  ]    Order
	Low voltage electron diffractive imaging of atomic structure in single-wall carbon nanotubes Osamu Kamimura, Yosuke Maehara, Takashi Dobashi, Keita Kobayashi, Ryo Kitaura, Hisanori Shinohara, Hiroyuki Shioya, and Kazutoshi Gohara Appl. Phys. Lett. 98, 174103 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1009 kB)  ]    Order
	In situ and noncontact measurement of silicon membrane thermal conductivity Xi Liu, Xiaoming Wu, and Tianling Ren Appl. Phys. Lett. 98, 174104 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (574 kB)  ]    Order
	Magnetically aligned carbon nanotube in nanopaper enabled shape-memory nanocomposite for high speed electrical actuation Haibao Lu, Jihua Gou, Jinsong Leng, and Shanyi Du Appl. Phys. Lett. 98, 174105 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1254 kB)  ]    Order
COMMENTS
	Comment on “Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment” [Appl. Phys. Lett. 97, 203508 (2010)] Yow-Jon Lin and Chia-Lung Tsai Appl. Phys. Lett. 98, 176101 (2011) (1 page) Abstract   Full Text: [ Read Online (HTML)   PDF  (39 kB)  ]
	Response to “Comment on `Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment'” [Appl. Phys. Lett. 98, 176101 (2011)] Jin-Woo Park, Hong-Koo Baik, Taekyung Lim, and Sanghyun Ju Appl. Phys. Lett. 98, 176102 (2011) (1 page) Abstract   Full Text: [ Read Online (HTML)   PDF  (44 kB)  ]

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