Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

January 2011

Volume 29, Issue 1, Articles 010601-01AE04

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Letters
	Design and focused ion beam fabrication of single crystal diamond nanobeam cavities Thomas M. Babinec, Jennifer T. Choy, Kirsten J. M. Smith, Mughees Khan, and Marko Lončar J. Vac. Sci. Technol. B 29, 010601 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (444 kB)  ]    Order
	Effects of molecular functionalization sequence on mesoporous silica film properties Binay Singh, Saurabh Garg, Ashutosh Jain, Richard Moore, and Ganpati Ramanath J. Vac. Sci. Technol. B 29, 010602 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (321 kB)  ]    Order
Review Article
	Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication Gottlieb S. Oehrlein, Raymond J. Phaneuf, and David B. Graves J. Vac. Sci. Technol. B 29, 010801 (2011) (35 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (2193 kB)  ]    Order
Articles
	Plasma etching of polydimethylsiloxane: Effects from process gas composition and dc self-bias voltage Geir Bjørnsen and Jaan Roots J. Vac. Sci. Technol. B 29, 011001 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (449 kB)  ]    Order
	Formation of silicon grass: Nanomasking by carbon clusters in cyclic deep reactive ion etching Steffen Leopold, Christoph Kremin, Angela Ulbrich, Stefan Krischok, and Martin Hoffmann J. Vac. Sci. Technol. B 29, 011002 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (478 kB)  ]    Order
	Enhanced outcoupling of electroluminescence from ZnS:ErF3 thin films by a photonic crystal Evan Law, Mark Davidson, Nigel Shepherd, and Paul H. Holloway J. Vac. Sci. Technol. B 29, 011003 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (668 kB)  ]    Order
	Deposit profiles characterized by the seed layer in Cu pulse-reverse plating on a patterned substrate Sung Ki Cho, Myung Jun Kim, Taeho Lim, Oh Joong Kwon, and Jae Jeong Kim J. Vac. Sci. Technol. B 29, 011004 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (320 kB)  ]    Order
	Nanoimprint replication of nonplanar nanostructure fabricated by focused-ion-beam chemical vapor deposition Yuji Kang, Shinya Omoto, Yasuki Nakai, Makoto Okada, Kazuhiro Kanda, Yuichi Haruyama, and Shinji Matsui J. Vac. Sci. Technol. B 29, 011005 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (313 kB)  ]    Order
	Application of kernel convolution for complementing source mask optimization Marshal A. Miller, Kenji Yamazoe, and Andrew R. Neureuther J. Vac. Sci. Technol. B 29, 011006 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (576 kB)  ]    Order
	Investigation of the radiation-induced thermal flexure of an x-ray lithography mask during a tilted exposure V. Nazmov, E. Reznikova, and J. Mohr J. Vac. Sci. Technol. B 29, 011007 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (433 kB)  ]    Order
	Fabrication of flexible ultracapacitor/galvanic cell hybrids using advanced nanoparticle coating technology Martin Peckerar, Mahsa Dornajafi, Zeynep Dilli, Neil Goldsman, Yves Ngu, Brent Boerger, Neil Van Wyck, James Gravelin, Brian Grenon, Robert B. Proctor, and Daniel A. Lowy J. Vac. Sci. Technol. B 29, 011008 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (676 kB)  ]    Order
	Dual-sputtered process sensitivity of HfGdO charge-trapping layer in SONOS-type nonvolatile memory Jer-Chyi Wang, Pai-Chi Chou, Chao-Sung Lai, and Li-Chi Liu J. Vac. Sci. Technol. B 29, 011009 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (283 kB)  ]    Order
	Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, and D. R. Leadley J. Vac. Sci. Technol. B 29, 011010 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (460 kB)  ]    Order
	Improvement of contact resistance between carbon nanotubes and metal electrodes for high performance electronics Yoojin Song and Seong Jun Kang J. Vac. Sci. Technol. B 29, 011011 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (277 kB)  ]    Order
	13 nm high-efficiency nickel-germanium soft x-ray zone plates Julia Reinspach, Magnus Lindblom, Michael Bertilson, Olov von Hofsten, Hans M. Hertz, and Anders Holmberg J. Vac. Sci. Technol. B 29, 011012 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (377 kB)  ]    Order
	Mechanistic considerations of low temperature hydrogen-based plasma etching of Cu Fangyu Wu, Galit Levitin, and Dennis W. Hess J. Vac. Sci. Technol. B 29, 011013 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (329 kB)  ]    Order
	Damage immune field effect transistors with vacuum gate dielectric Jin-Woo Han, Jae-Hyuk Ahn, and Yang-Kyu Choi J. Vac. Sci. Technol. B 29, 011014 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (330 kB)  ]    Order
	Compact holographic lithography system for photonic-crystal structure Mei-Li Hsieh and Shawn-Yu Lin J. Vac. Sci. Technol. B 29, 011015 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1814 kB)  ]    Order
	High verticality InP/InGaAsP etching in Cl2/H2/Ar inductively coupled plasma for photonic integrated circuits John S. Parker, Erik J. Norberg, Robert S. Guzzon, Steven C. Nicholes, and Larry A. Coldren J. Vac. Sci. Technol. B 29, 011016 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (401 kB)  ]    Order
	Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering A. Fouda, K. Hazu, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu J. Vac. Sci. Technol. B 29, 011017 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (542 kB)  ]    Order
	Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions N. Posseme, R. Bouyssou, T. Chevolleau, T. David, V. Arnal, M. Darnon, Ph. Brun, C. Verove, and O. Joubert J. Vac. Sci. Technol. B 29, 011018 (2011) (10 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (497 kB)  ]    Order
	Thick benzocyclobutene etching using high density SF6/O2 plasmas Qianwen Chen, Dingyou Zhang, Zhimin Tan, Zheyao Wang, Litian Liu, and Jian-Qiang Lu J. Vac. Sci. Technol. B 29, 011019 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (345 kB)  ]    Order
	Influence of pH and abrasive concentration on polishing rate of amorphous Ge2Sb2Te5 film in chemical mechanical polishing Zefang Zhang, Weili Liu, and Zhitang Song J. Vac. Sci. Technol. B 29, 011020 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (450 kB)  ]    Order
	Molecularly selective nanopatterns using nanoimprint lithography: A label-free sensor architecture Daniel Forchheimer, Gang Luo, Lei Ye, and Lars Montelius J. Vac. Sci. Technol. B 29, 011021 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (502 kB)  ]    Order
	Compensation methods for buried defects in extreme ultraviolet lithography masks Chris H. Clifford, Tina T. Chan, and Andrew R. Neureuther J. Vac. Sci. Technol. B 29, 011022 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (474 kB)  ]    Order
	Scalable nanoimprint patterning of thin graphitic oxide sheets and in situ reduction Yeong-Yuh Lee, Karen S. L. Chong, Seok-Hong Goh, Andrew M. H. Ng, Madanagopal V. Kunnavakkam, Chiou-Liu Hee, Yanping Xu, Hosea Tantang, Ching-Yuan Su, and Lain-Jong Li J. Vac. Sci. Technol. B 29, 011023 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (702 kB)  ]    Order
	Poly-Si/TiN/Mo/HfO2 gate stack etching in high-density plasmas O. Luere, E. Pargon, L. Vallier, and O. Joubert J. Vac. Sci. Technol. B 29, 011024 (2011) (9 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (422 kB)  ]    Order
	Interconnected alternating-current light-emitting diode arrays isolated by laser micromachining Giuseppe Y. Mak, Edmund Y. Lam, and H. W. Choi J. Vac. Sci. Technol. B 29, 011025 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (579 kB)  ]    Order
	Characterization of damage induced by FIB etch and tungsten deposition in high aspect ratio vias Yariv Drezner, Daniel Fishman, Yuval Greenzweig, and Amir Raveh J. Vac. Sci. Technol. B 29, 011026 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (731 kB)  ]    Order
	Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics E. J. Katz, Z. Zhang, H. L. Hughes, K. -B. Chung, G. Lucovsky, and L. J. Brillson J. Vac. Sci. Technol. B 29, 011027 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (437 kB)  ]    Order
	Etch mechanisms of silicon gate structures patterned in SF6/CH2F2/Ar inductively coupled plasmas O. Luere, E. Pargon, L. Vallier, B. Pelissier, and O. Joubert J. Vac. Sci. Technol. B 29, 011028 (2011) (10 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (499 kB)  ]    Order
	Control of semiconductor quantum dot nanostructures: Variants of SixGe1−x/Si quantum dot molecules Jessica K. Murphy, Robert Hull, Devin Pyle, Hao Wang, Jennifer Gray, and Jerrold Floro J. Vac. Sci. Technol. B 29, 011029 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (237 kB)  ]    Order
	Inhibition of carbon growth and removal of carbon deposits on extreme ultraviolet lithography mirrors by extreme ultraviolet irradiation in the presence of water, oxygen, or oxygen/ozone mixtures Masahito Niibe, Keigo Koida, and Yukinobu Kakutani J. Vac. Sci. Technol. B 29, 011030 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (569 kB)  ]    Order
	Quantitative simulation of ion-beam induced deposition of nanostructures Christoph Ebm, Gerhard Hobler, Simon Waid, and Heinz D. Wanzenboeck J. Vac. Sci. Technol. B 29, 011031 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (580 kB)  ]    Order
	Performance characteristics of GaN-based light-emitting diodes fabricated with AgNi, AgCu, and AgAl-alloy reflectors Hyunsoo Kim and Sung-Nam Lee J. Vac. Sci. Technol. B 29, 011032 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (209 kB)  ]    Order
	Vision-based approach to automated analysis of structure boundaries in scanning electron microscope images Nak H. Kim and Soo-Young Lee J. Vac. Sci. Technol. B 29, 011033 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (243 kB)  ]    Order
	Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography Gwangmin Kwon, Kyeongkeun Ko, Haiwon Lee, Woongsun Lim, Geun Young Yeom, Sunwoo Lee, and Jinho Ahn J. Vac. Sci. Technol. B 29, 011034 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (409 kB)  ]    Order
	Path to achieve sub-10-nm half-pitch using electron beam lithography A. Tavakkoli K. G., S. N. Piramanayagam, M. Ranjbar, R. Sbiaa, and T. C. Chong J. Vac. Sci. Technol. B 29, 011035 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1342 kB)  ]    Order
PAPERS FROM THE 16th WORKSHOP ON DIELECTRICS IN MICROELECTRONICS Theory of Dielectric Materials [ Next Subject | Issue Index | Top / Bottom of Page]
	Multiphonon hole trapping from first principles F. Schanovsky, W. Gös, and T. Grasser J. Vac. Sci. Technol. B 29, 01A201 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (151 kB)  ]    Order
Advanced Technologies for Thin Dielectric Film Growth [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology R. Lupták, J. M. J. Lopes, St. Lenk, B. Holländer, E. Durğun Özben, A. T. Tiedemann, M. Schnee, J. Schubert, S. Habicht, S. Feste, S. Mantl, U. Breuer, A. Besmehn, P. K. Baumann, and M. Heuken J. Vac. Sci. Technol. B 29, 01A301 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (527 kB)  ]    Order
	Structural and electrical properties of TixAl1−xOy thin films grown by atomic layer deposition A. P. Alekhin, A. A. Chouprik, S. A. Gudkova, A. M. Markeev, Yu. Yu. Lebedinskii, Yu. A. Matveyev, and A. V. Zenkevich J. Vac. Sci. Technol. B 29, 01A302 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (819 kB)  ]    Order
	Chemical vapor deposition and characterization of high-k BaHf1−xTixO3 dielectric layers for microelectronic applications A. Abrutis, T. Katkus, S. Stanionyte, V. Kubilius, G. Lupina, Ch. Wenger, and M. Lukosius J. Vac. Sci. Technol. B 29, 01A303 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (382 kB)  ]    Order
	Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition Mihaela Popovici, Sven Van Elshocht, Nicolas Menou, Paola Favia, Hugo Bender, Erik Rosseel, Johan Swerts, Christoph Adelmann, Christa Vrancken, Alain Moussa, Hilde Tielens, Kazuyuki Tomida, Malgorzata Pawlak, Ben Kaczer, Geert Schoofs et al. J. Vac. Sci. Technol. B 29, 01A304 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (680 kB)  ]    Order
Characterisation of Dielectrics at Nano-Scale [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy V. Yanev, M. Rommel, A. J. Bauer, and L. Frey J. Vac. Sci. Technol. B 29, 01A401 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (802 kB)  ]    Order
Emerging Dielectric Materials [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Temperature hysteresis of the capacitance dependence C(T) for ferroelectric ceramics Antonina Dedyk, Yulia Pavlova, Sergey Karmanenko, Alexander Semenov, Dmitry Semikin, Oleg Pakhomov, Alexander Starkov, and Ivan Starkov J. Vac. Sci. Technol. B 29, 01A501 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (362 kB)  ]    Order
New Device Approaches [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors S. Walther, S. Polster, B. Meyer, M. P. M. Jank, H. Ryssel, and L. Frey J. Vac. Sci. Technol. B 29, 01A601 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (494 kB)  ]    Order
High-k Dielectrics on Si [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Metallic oxygen barrier diffusion applied to high- deposition E. Rauwel, P. Rauwel, F. Ducroquet, I. Matko, and A. C. Lourenço J. Vac. Sci. Technol. B 29, 01A701 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (968 kB)  ]    Order
High-k Dielectrics on High Mobility Semiconductors: Ge, III-V, III-N [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy Md. Nurul Kabir Bhuiyan, Mariela Menghini, Jean-Pierre Locquet, Jin Won Seo, Christel Dieker, Wolfgang Jäger, and Chiara Marchiori J. Vac. Sci. Technol. B 29, 01A801 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (485 kB)  ]    Order
	Interfacial properties of HfO2 dielectric film on Ge substrate Dawei He, Xinhong Cheng, Dawei Xu, Zhongjian Wang, Yuehui Yu, Qingqing Sun, and David Wei Zhang J. Vac. Sci. Technol. B 29, 01A802 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (181 kB)  ]    Order
	Characterization of NbAlO dielectric film deposited on InP Dawei He, Xinhong Cheng, Dawei Xu, Zhongjian Wang, Yuehui Yu, Qingqing Sun, and David Wei Zhang J. Vac. Sci. Technol. B 29, 01A803 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (270 kB)  ]    Order
	Impact of halo implant on the hot carrier reliability of germanium p-channel metal-oxide-semiconductor field-effect transitors J. Franco, G. Eneman, B. Kaczer, J. Mitard, B. De Jaeger, and G. Groeseneken J. Vac. Sci. Technol. B 29, 01A804 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (359 kB)  ]    Order
	High quality epitaxial Dy3Ge5 films grown on Ge(001) substrates Md. Nurul Kabir Bhuiyan, Mariela Menghini, Jean-Pierre Locquet, Jin Won Seo, and Chiara Marchiori J. Vac. Sci. Technol. B 29, 01A805 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (539 kB)  ]    Order
	Atomic layer deposition temperature dependent minority carrier generation in ZrO2/GeO2/Ge capacitors O. Bethge, S. Abermann, C. Henkel, J. Smoliner, E. Bertagnolli, C. J. Straif, and H. Hutter J. Vac. Sci. Technol. B 29, 01A806 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1226 kB)  ]    Order
	Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S. Monaghan, A. O'Mahony, K. Cherkaoui, É. O'Connor, I. M. Povey, M. G. Nolan, D. O'Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, and S. B. Newcomb J. Vac. Sci. Technol. B 29, 01A807 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1540 kB)  ]    Order
	Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K. Čičo, K. Hušeková, M. apajna, D. Gregušová, R. Stoklas, J. Kuzmík, J.-F. Carlin, N. Grandjean, D. Pogany, and K. Fröhlich J. Vac. Sci. Technol. B 29, 01A808 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (403 kB)  ]    Order
	Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering R. Stoklas, D. Gregušová, Š. Gaži, J. Novák, and P. Kordoš J. Vac. Sci. Technol. B 29, 01A809 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (296 kB)  ]    Order
High-k/Metal Gate Stack, Characterisation, Scaling, Stability [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si A. Gómez, H. Castán, H. García, S. Dueñas, L. Bailón, F. Campabadal, J. M. Rafí, and M. Zabala J. Vac. Sci. Technol. B 29, 01A901 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (510 kB)  ]    Order
	Trapping in GdSiO high-k films R. Rao, R. Simoncini, H. D. B. Gottlob, M. Schmidt, and F. Irrera J. Vac. Sci. Technol. B 29, 01A902 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (343 kB)  ]    Order
	Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors E. Durğun Özben, J. M. J. Lopes, A. Nichau, R. Lupták, S. Lenk, A. Besmehn, K. K. Bourdelle, Q. T. Zhao, J. Schubert, and S. Mantl J. Vac. Sci. Technol. B 29, 01A903 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (566 kB)  ]    Order
	Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors Wen-Teng Chang, Jian-An Lin, Chih-Chung Wang, and Wen-Kuan Yeh J. Vac. Sci. Technol. B 29, 01A904 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (601 kB)  ]    Order
	Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks A. Fet, V. Häublein, A. J. Bauer, H. Ryssel, and L. Frey J. Vac. Sci. Technol. B 29, 01A905 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (584 kB)  ]    Order
Defect Characterisation, Engineering of Dielectrics, Leakage Currents [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy Gerald Lucovsky, Leonardo Miotti, and Karen Paz Bastos J. Vac. Sci. Technol. B 29, 01AA01 (2011) (9 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (990 kB)  ]    Order
	Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1−xTixO3 for x greater than the percolation threshold of ~0.16 Gerry Lucovsky, Leonardo Miotti, Karen Paz Bastos, Carolina Adamo, and Darrell G. Schlom J. Vac. Sci. Technol. B 29, 01AA02 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (922 kB)  ]    Order
	Traps and trapping phenomena and their implications on electrical behavior of high-k capacitor stacks A. Paskaleva, M. Lemberger, E. Atanassova, and A. J. Bauer J. Vac. Sci. Technol. B 29, 01AA03 (2011) (10 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (904 kB)  ]    Order
	Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress M. Toledano-Luque, B. Kaczer, Ph. Roussel, M. J. Cho, T. Grasser, and G. Groeseneken J. Vac. Sci. Technol. B 29, 01AA04 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (506 kB)  ]    Order
	Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor G. Roll, S. Jakschik, M. Goldbach, A. Wachowiak, T. Mikolajick, and L. Frey J. Vac. Sci. Technol. B 29, 01AA05 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (429 kB)  ]    Order
	Study of the physical and electrical degradation of thin oxide films by atomic force microscope Wael Hourani, Brice Gautier, Liviu Militaru, David Albertini, and Armel Descamps-Mandine J. Vac. Sci. Technol. B 29, 01AA06 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (798 kB)  ]    Order
	Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates F. Campabadal, J. M. Rafí, M. Zabala, O. Beldarrain, A. Faigón, H. Castán, A. Gómez, H. García, and S. Dueñas J. Vac. Sci. Technol. B 29, 01AA07 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (865 kB)  ]    Order
Electrical Characterisation and Reliability of Devices with Alternative Dielectrics [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Recent trends in bias temperature instability B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, and G. Groeseneken J. Vac. Sci. Technol. B 29, 01AB01 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (580 kB)  ]    Order
	Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy V. Iglesias, M. Porti, M. Nafría, X. Aymerich, P. Dudek, and G. Bersuker J. Vac. Sci. Technol. B 29, 01AB02 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (350 kB)  ]    Order
	CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique N. Sedghi, I. Z. Mitrovic, S. Hall, J. M. J. Lopes, and J. Schubert J. Vac. Sci. Technol. B 29, 01AB03 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (762 kB)  ]    Order
	Dielectric layers suitable for high voltage integrated trench capacitors J. vom Dorp, T. Erlbacher, A. J. Bauer, H. Ryssel, and L. Frey J. Vac. Sci. Technol. B 29, 01AB04 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (884 kB)  ]    Order
	Noncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric J. L. Everaert, E. Rosseel, A. Pap, A. Meszaros, J. Dekoster, and T. Pavelka J. Vac. Sci. Technol. B 29, 01AB05 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (406 kB)  ]    Order
	Current instabilities in rare-earth oxides-HfO2 gate stacks grown on germanium based metal-oxide-semiconductor devices due to Maxwell–Wagner instabilities and dielectrics relaxation M. S. Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou, and S. Galata J. Vac. Sci. Technol. B 29, 01AB06 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (677 kB)  ]    Order
	Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors E. Amat, J. Martin-Martínez, M. B. Gonzalez, R. Rodríguez, M. Nafría, X. Aymerich, P. Verheyen, and E. Simoen J. Vac. Sci. Technol. B 29, 01AB07 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (351 kB)  ]    Order
	Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress T. Erlbacher, V. Yanev, M. Rommel, A. J. Bauer, and L. Frey J. Vac. Sci. Technol. B 29, 01AB08 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (532 kB)  ]    Order
	Hot-carrier degradation caused interface state profile—Simulation versus experiment I. Starkov, S. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J. M. Park, H. Ceric, and T. Grasser J. Vac. Sci. Technol. B 29, 01AB09 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (567 kB)  ]    Order
	Reliability studies on Ta2O5 high- dielectric metal-insulator-metal capacitors prepared by wet anodization N. Sedghi, W. Davey, I. Z. Mitrovic, and S. Hall J. Vac. Sci. Technol. B 29, 01AB10 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1120 kB)  ]    Order
High-k Dielectrics for DRAM [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Electrical characteristics of Ti–Ta–O based MIM capacitors M. Lukosius, C. Baristiran Kaynak, Ch. Wenger, G. Ruhl, and S. Rushworth J. Vac. Sci. Technol. B 29, 01AC01 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (602 kB)  ]    Order
	Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures Dominik Martin, Matthias Grube, Wenke Weinreich, Johannes Müller, Lutz Wilde, Elke Erben, Walter M. Weber, Johannes Heitmann, Uwe Schröder, Thomas Mikolajick, and Henning Riechert J. Vac. Sci. Technol. B 29, 01AC02 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1598 kB)  ]    Order
	Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 P. Dudek, G. Lupina, G. Kozowski, P. Zaumseil, J. Bauer, O. Fursenko, J. Dabrowski, R. Schmidt, G. Lippert, H.-J. Müssig, T. Schroeder, D. Schmeißer, and E. Zschech J. Vac. Sci. Technol. B 29, 01AC03 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (834 kB)  ]    Order
	Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3-based metal-insulator-metal capacitors grown by atomic layer deposition H. García, H. Castán, A. Gómez, S. Dueñas, L. Bailón, K. Kukli, M. Kariniemi, M. Kemell, J. Niinistö, M. Ritala, and M. Leskelä J. Vac. Sci. Technol. B 29, 01AC04 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (222 kB)  ]    Order
	Applicability of molecular beam deposition for the growth of high-k oxides Matthias Grube, Dominik Martin, Walter M. Weber, Thomas Mikolajick, Oliver Bierwagen, Lutz Geelhaar, and Henning Riechert J. Vac. Sci. Technol. B 29, 01AC05 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (349 kB)  ]    Order
	Temperature dependence of TaAlOx metal-insulator-metal capacitors M. K. Hota, S. Mallik, C. K. Sarkar, and C. K. Maiti J. Vac. Sci. Technol. B 29, 01AC06 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (564 kB)  ]    Order
	Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications A. Krause, W. Weber, A. Jahn, K. Richter, D. Pohl, B. Rellinghaus, U. Schröder, J. Heitmann, and T. Mikolajick J. Vac. Sci. Technol. B 29, 01AC07 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (424 kB)  ]    Order
	Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures J. Racko, M. Mikolášek, L. Harmatha, J. Breza, B. Hudec, K. Fröhlich, J. Aarik, A. Tarre, R. Granzner, and F. Schwierz J. Vac. Sci. Technol. B 29, 01AC08 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (475 kB)  ]    Order
	Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer B. Hudec, K. Hušeková, E. Dobročka, J. Aarik, R. Rammula, A. Kasikov, A. Tarre, A. Vincze, and K. Fröhlich J. Vac. Sci. Technol. B 29, 01AC09 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (738 kB)  ]    Order
Resistive Switching in Dielectrics [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition C. Kügeler, J. Zhang, S. Hoffmann-Eifert, S. K. Kim, and R. Waser J. Vac. Sci. Technol. B 29, 01AD01 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1499 kB)  ]    Order
	On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration Ch. Walczyk, Ch. Wenger, D. Walczyk, M. Lukosius, I. Costina, M. Fraschke, J. Dabrowski, A. Fox, D. Wolansky, S. Thiess, E. Miranda, B. Tillack, and T. Schroeder J. Vac. Sci. Technol. B 29, 01AD02 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1663 kB)  ]    Order
	Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations A. Makarov, V. Sverdlov, and S. Selberherr J. Vac. Sci. Technol. B 29, 01AD03 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (496 kB)  ]    Order
	Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions Milan Tomasek, Tomas Plecenik, Martin Truchly, Jaroslav Noskovic, Tomas Roch, Miroslav Zahoran, Stefan Chromik, Mariana Spankova, Peter Kus, and Andrej Plecenik J. Vac. Sci. Technol. B 29, 01AD04 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (252 kB)  ]    Order
	Mesoscopic nature of the electron transport in electroformed metal-insulator-metal switches E. Miranda J. Vac. Sci. Technol. B 29, 01AD05 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (154 kB)  ]    Order
Dielectrics for Non-Volatile Memories [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions G. Ghidini, N. Galbiati, E. Mascellino, C. Scozzari, A. Sebastiani, S. Amoroso, C. Monzio Compagnoni, A. S. Spinelli, A. Maconi, R. Piagge, A. Del Vitto, M. Alessandri, I. Baldi, E. Moltrasio, G. Albini et al. J. Vac. Sci. Technol. B 29, 01AE01 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (556 kB)  ]    Order
	Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories J. P. Colonna, M. Bocquet, G. Molas, N. Rochat, P. Blaise, H. Grampeix, C. Licitra, D. Lafond, L. Masoero, V. Vidal, J. P. Barnes, M. Veillerot, and K. Yckache J. Vac. Sci. Technol. B 29, 01AE02 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (955 kB)  ]    Order
	Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack A. Lamperti, E. Cianci, U. Russo, S. Spiga, O. Salicio, G. Congedo, and M. Fanciulli J. Vac. Sci. Technol. B 29, 01AE03 (2011) (9 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1828 kB)  ]    Order
	Evaluation of DyScOx as an alternative blocking dielectric in TANOS memories with Si3N4 or Si-rich SiN charge trapping layers G. Congedo, S. Spiga, U. Russo, A. Lamperti, O. Salicio, E. Cianci, and M. Fanciulli J. Vac. Sci. Technol. B 29, 01AE04 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (588 kB)  ]    Order

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