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sábado, 13 de febrero de 2010

ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 2, 2010


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New Volume/Issue is now available on ScienceDirect
Solid-State ElectronicsSolid-State Electronics

Volume 54, Issue 2,  Pages 85-220 (February 2010)

Selected Full-Length Extended Papers from the EUROSOI 2009 Conference
Edited by Olof Engström

 1. Editorial Board
Page IFC


 
  Editorial
 2. Foreword
Page 85
Olof Engström

 
  Regular Papers
 3. SOI versus bulk-silicon nanoscale FinFETs
Pages 86-89
Jerry G. Fossum, Zhenming Zhou, Leo Mathew, Bich-Yen Nguyen

 
 4. Thin-film devices for low power applications
Pages 90-96
S. Monfray, C. Fenouillet-Beranger, G. Bidal, F. Boeuf, S. Denorme, J.L. Huguenin, M.P. Samson, N. Loubet, J.M. Hartmann, Y. Campidelli, V. Destefanis, C. Arvet, K. Benotmane, L. Clement, O. Faynot, T. Skotnicki

 
 5. Performance estimation of junctionless multigate transistors
Pages 97-103
Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Pedram Razavi, Jean-Pierre Colinge

 
 6. Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications
Pages 104-114
M. Bawedin, S. Cristoloveanu, D. Flandre, F. Udrea

 
 7. Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs
Pages 115-122
Andreas Schenk

 
 8. Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs
Pages 123-130
L. Pham-Nguyen, C. Fenouillet-Beranger, G. Ghibaudo, T. Skotnicki, S. Cristoloveanu

 
 9. Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
Pages 131-136
C. Sampedro, F. Gámiz, A. Godoy, R. Valín, A. García-Loureiro, F.G. Ruiz

 
 10. Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 1 analytical consideration and strain-induced valley splitting
Pages 137-142
Thomas Windbacher, Viktor Sverdlov, Oskar Baumgartner, Siegfried Selberherr

 
 11. Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation
Pages 143-148
Oskar Baumgartner, Markus Karner, Viktor Sverdlov, Hans Kosina

 
 12. Physical modeling of millimetre wave signal reflection from forward biased PIN diodes
Pages 149-152
R.P. Jackson, S.J.N. Mitchell, V. Fusco

 
 13. Oxygen out-diffusion from buried layers in SOI and SiC–SOI substrates
Pages 153-157
L.-G. Li, Ö. Vallin, J. Lu, U. Smith, H. Norström, J. Olsson

 
 14. Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology
Pages 158-163
J. Widiez, M. Rabarot, S. Saada, J.-P. Mazellier, J. Dechamp, V. Delaye, J.-C. Roussin, F. Andrieu, O. Faynot, S. Deleonibus, P. Bergonzo, L. Clavelier

 
 15. Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
Pages 164-170
T. Rudenko, V. Kilchytska, S. Burignat, J.-P. Raskin, F. Andrieu, O. Faynot, Y. Le Tiec, K. Landry, A. Nazarov, V.S. Lysenko, D. Flandre

 
 16. Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
Pages 171-177
Lars Vestling, Olof Bengtsson, Klas-Håkan Eklund, Jörgen Olsson

 
 17. Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Pages 178-184
S. Put, H. Mehta, N. Collaert, M. Van Uffelen, P. Leroux, C. Claeys, N. Lukyanchikova, E. Simoen

 
 18. Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
Pages 185-190
C. Urban, C. Sandow, Q.-T. Zhao, J. Knoch, S. Lenk, S. Mantl

 
 19. Hole transport in DGSOI devices: Orientation and silicon thickness effects
Pages 191-195
L. Donetti, F. Gámiz, N. Rodrı´guez, F. Jiménez-Molinos, J.B. Roldán

 
 20. Effect of high-energy neutrons on MuGFETs
Pages 196-204
V. Kilchytska, J. Alvarado, N. Collaert, R. Rooyakers, O. Militaru, G. Berger, D. Flandre

 
 21. Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction
Pages 205-212
W. Van Den Daele, E. Augendre, C. Le Royer, J.-F. Damlencourt, B. Grandchamp, S. Cristoloveanu

 
 22. Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel
Pages 213-219
S. Burignat, D. Flandre, M.K. Md Arshad, V. Kilchytska, F. Andrieu, O. Faynot, J.-P. Raskin

 


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viernes, 12 de febrero de 2010

Table of Contents Alert for Applied Physics Letters



Cover image from Takashi Yokoyama, Appl. Phys. Lett. 96, 063101 (2010).

Applied Physics Letters -- 8 February 2010

Volume 96, Issue 6 , Articles (06xxxx)

[ Previous Issue | Available Volumes | Issue Index ]

LASERS, OPTICS, AND OPTOELECTRONICS

  • Group velocity dispersion and self phase modulation in silicon nitride waveguides
    D. T. H. Tan, K. Ikeda, P. C. Sun, and Y. Fainman
    Appl. Phys. Lett. 96, 061101 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (233 kB)  ]    Order
  • Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
    W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska
    Appl. Phys. Lett. 96, 061102 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (218 kB)  ]    Order
  • Reactive radical facilitated reaction-diffusion modeling for holographic photopolymerization
    Jianhua Liu, Haihui Pu, Bin Gao, Hongyue Gao, Dejin Yin, and Haitao Dai
    Appl. Phys. Lett. 96, 061103 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (541 kB)  ]    Order
  • Single-walled carbon-nanotube-deposited tapered fiber for four-wave mixing based wavelength conversion
    K. K. Chow, M. Tsuji, and S. Yamashita
    Appl. Phys. Lett. 96, 061104 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (358 kB)  ]    Order
  • Soliton self-deflection via power-dependent walk-off
    Armando Piccardi, Alessandro Alberucci, and Gaetano Assanto
    Appl. Phys. Lett. 96, 061105 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (249 kB)  ]    Order
  • High-Q silica microsphere by poly(methyl methacrylate) coating and modifying
    C.-H. Dong, F.-W. Sun, C.-L. Zou, X.-F. Ren, G.-C. Guo, and Z.-F. Han
    Appl. Phys. Lett. 96, 061106 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (429 kB)  ]    Order
  • Integrated terahertz pulse generation and amplification in quantum cascade lasers
    S. S. Dhillon, S. Sawallich, N. Jukam, D. Oustinov, J. Madéo, S. Barbieri, P. Filloux, C. Sirtori, X. Marcadet, and J. Tignon
    Appl. Phys. Lett. 96, 061107 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (174 kB)  ]    Order
  • Raman scattered photon transmission through a single nanoslit
    Chang Chen (陈昌), Francesca Clemente, Ronald Kox, Liesbet Lagae, Guido Maes, Gustaaf Borghs, and Pol Van Dorpe
    Appl. Phys. Lett. 96, 061108 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (298 kB)  ]    Order
  • A direct comparison of single-walled carbon nanotubes and quantum-wells based subpicosecond saturable absorbers for all optical signal regeneration at 1.55  µm
    H. Nong, M. Gicquel, L. Bramerie, M. Perrin, F. Grillot, C. Levallois, A. Maalouf, and S. Loualiche
    Appl. Phys. Lett. 96, 061109 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (165 kB)  ]    Order
  • Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer
    Lei Wang, Rui Li, Ding Li, Ningyang Liu, Lei Liu, Weihua Chen, Cunda Wang, Zhijian Yang, and Xiaodong Hu
    Appl. Phys. Lett. 96, 061110 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (336 kB)  ]    Order
  • Interface roughness transport in terahertz quantum cascade detectors
    Emmanuel Lhuillier, Isabelle Ribet-Mohamed, Emmanuel Rosencher, Gilles Patriarche, Amandine Buffaz, Vincent Berger, and Mathieu Carras
    Appl. Phys. Lett. 96, 061111 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (186 kB)  ]    Order
  • PLASMAS AND ELECTRICAL DISCHARGES

  • Breakdown probability of neon under the influence of field electron emission and surface charges on the cathode surface
    V. Lj. Marković, S. R. Gocić, and S. N. Stamenković
    Appl. Phys. Lett. 96, 061501 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (182 kB)  ]    Order
  • High current diffuse dielectric barrier discharge in atmospheric pressure air for the deposition of thin silica-like films
    S. A. Starostin, P. Antony Premkumar, M. Creatore, H. de Vries, R. M. J. Paffen, and M. C. M. van de Sanden
    Appl. Phys. Lett. 96, 061502 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (267 kB)  ]    Order
  • Low-pressure indium-halide discharges for fluorescent illumination applications
    Daiyu Hayashi, Rainer Hilbig, Achim Körber, Stefan Schwan, Robert Scholl, Martin Boerger, and Maria Huppertz
    Appl. Phys. Lett. 96, 061503 (2010) (2 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (194 kB)  ]    Order
  • STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

  • Temperature-dependent shear band dynamics in a Zr-based bulk metallic glass
    David Klaumünzer, Robert Maaß, Florian H. Dalla Torre, and Jörg F. Löffler
    Appl. Phys. Lett. 96, 061901 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (329 kB)  ]    Order
  • Thermoreflectance characterization of band-edge excitonic transitions in CuAlS2 ultraviolet solar-cell material
    Ching-Hwa Ho
    Appl. Phys. Lett. 96, 061902 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (208 kB)  ]    Order
  • Statistical composition-structure-property correlation and glass-forming ability based on the full icosahedra in Cu–Zr metallic glasses
    Z. D. Sha, Y. P. Feng, and Y. Li
    Appl. Phys. Lett. 96, 061903 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (116 kB)  ]    Order
  • Effects of additional Ce3+ doping on the luminescence of Li2SrSiO4:Eu2+ yellow phosphor
    Tae-Gon Kim, Hyo-Sug Lee, Chun Che Lin, Taehyung Kim, Ru-Shi Liu, Ting-Shan Chan, and Seoung-Jae Im
    Appl. Phys. Lett. 96, 061904 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (356 kB)  ]    Order
  • Optical and electro-optic anisotropy of epitaxial Ba0.7Sr0.3TiO3 thin films
    D. Y. Wang, S. Li, H. L. W. Chan, and C. L. Choy
    Appl. Phys. Lett. 96, 061905 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (314 kB)  ]    Order
  • Identification of extremely radiative nature of AlN by time-resolved photoluminescence
    T. Onuma, K. Hazu, A. Uedono, T. Sota, and S. F. Chichibu
    Appl. Phys. Lett. 96, 061906 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (153 kB)  ]    Order
  • Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities
    X. Q. Wang, G. Z. Zhao, Q. Zhang, Y. Ishitani, A. Yoshikawa, and B. Shen
    Appl. Phys. Lett. 96, 061907 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (127 kB)  ]    Order
  • The influence of Ni additions on the relative stability of eta and eta[prime] Cu6Sn5
    U. Schwingenschlögl, C. Di Paola, K. Nogita, and C. M. Gourlay
    Appl. Phys. Lett. 96, 061908 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (288 kB)  ]    Order
  • Optical band-gap determination of nanostructured WO3 film
    P. P. González-Borrero, F. Sato, A. N. Medina, M. L. Baesso, A. C. Bento, G. Baldissera, C. Persson, G. A. Niklasson, C. G. Granqvist, and A. Ferreira da Silva
    Appl. Phys. Lett. 96, 061909 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (142 kB)  ]    Order
  • Monte Carlo modeling of the fiber curliness effect on percolation of conductive composites
    H. M. Ma, X.-L. Gao, and T. Benson Tolle
    Appl. Phys. Lett. 96, 061910 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (282 kB)  ]    Order
  • Spontaneous and electric field induced quadratic optical nonlinearity in ferroelectric crystals AgNa(NO2)2
    A. V. Kityk, R. Czaplicki, A. Klöpperpieper, A. S. Andrushchak, and B. Sahraoui
    Appl. Phys. Lett. 96, 061911 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (272 kB)  ]    Order
  • Molecular beam epitaxy growth and optical properties of AlN nanowires
    O. Landré, V. Fellmann, P. Jaffrennou, C. Bougerol, H. Renevier, A. Cros, and B. Daudin
    Appl. Phys. Lett. 96, 061912 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (174 kB)  ]    Order
  • Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy
    D. Zhou, G. Sharma, S. F. Thomassen, T. W. Reenaas, and B. O. Fimland
    Appl. Phys. Lett. 96, 061913 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (562 kB)  ]    Order
  • ELECTRONIC TRANSPORT AND SEMICONDUCTORS

  • Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
    J. G. Keizer, J. Bocquel, P. M. Koenraad, T. Mano, T. Noda, and K. Sakoda
    Appl. Phys. Lett. 96, 062101 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (516 kB)  ]    Order
  • Mobility analysis of highly conducting thin films: Application to ZnO
    D. C. Look, K. D. Leedy, D. H. Tomich, and B. Bayraktaroglu
    Appl. Phys. Lett. 96, 062102 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (118 kB)  ]    Order
  • Ultrafast terahertz photoconductivity in nanocrystalline mesoporous TiO2 films
    H. Němec, P. Kužel, F. Kadlec, D. Fattakhova-Rohlfing, J. Szeifert, T. Bein, V. Kalousek, and J. Rathouský
    Appl. Phys. Lett. 96, 062103 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (179 kB)  ]    Order
  • Photoconductivity in single AlN nanowires by subband gap excitation
    H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, and Y. J. Yang
    Appl. Phys. Lett. 96, 062104 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (432 kB)  ]    Order
  • Measurement of the hot electron attenuation length of copper
    J. J. Garramone, J. R. Abel, I. L. Sitnitsky, L. Zhao, I. Appelbaum, and V. P. LaBella
    Appl. Phys. Lett. 96, 062105 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (167 kB)  ]    Order
  • Terahertz conductivity of doped silicon calculated using the ensemble Monte Carlo/finite-difference time-domain simulation technique
    K. J. Willis, S. C. Hagness, and I. Knezevic
    Appl. Phys. Lett. 96, 062106 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (343 kB)  ]    Order
  • A microprobe technique for simultaneously measuring thermal conductivity and Seebeck coefficient of thin films
    Yanliang Zhang, Claudiu L. Hapenciuc, Eduardo E. Castillo, Theodorian Borca-Tasciuc, Rutvik J. Mehta, Chinnathambi Karthik, and Ganpati Ramanath
    Appl. Phys. Lett. 96, 062107 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (212 kB)  ]    Order
  • Electrically tunable electron g factors in coupled InAs/GaAs pyramid quantum dots
    Jiqing Wang, Huibing Mao, Jianguo Yu, Qiang Zhao, Hongying Zhang, Pingxiong Yang, Ziqiang Zhu, and Junhao Chu
    Appl. Phys. Lett. 96, 062108 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (129 kB)  ]    Order
  • Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells
    T. Taliercio, A. Gassenq, E. Luna, A. Trampert, and E. Tournié
    Appl. Phys. Lett. 96, 062109 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (324 kB)  ]    Order
  • Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity
    P. D. C. King, I. McKenzie, and T. D. Veal
    Appl. Phys. Lett. 96, 062110 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (140 kB)  ]    Order
  • Anisotropic transport in graphene on SiC substrate with periodic nanofacets
    S. Odaka, H. Miyazaki, S.-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, and Y. Aoyagi
    Appl. Phys. Lett. 96, 062111 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (364 kB)  ]    Order
  • Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption
    W. L. Huang, J. Labis, S. C. Ray, Y. R. Liang, C. W. Pao, H. M. Tsai, C. H. Du, W. F. Pong, J. W. Chiou, M.-H. Tsai, H. J. Lin, J. F. Lee, Y. T. Chou, J. L. Shen, C. W. Chen et al.
    Appl. Phys. Lett. 96, 062112 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (310 kB)  ]    Order
  • Modeling of leakage currents in high-kappa dielectrics: Three-dimensional approach via kinetic Monte Carlo
    Gunther Jegert, Alfred Kersch, Wenke Weinreich, Uwe Schröder, and Paolo Lugli
    Appl. Phys. Lett. 96, 062113 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (139 kB)  ]    Order
  • Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films
    Junwoo Son, Pouya Moetakef, James M. LeBeau, Daniel Ouellette, Leon Balents, S. James Allen, and Susanne Stemmer
    Appl. Phys. Lett. 96, 062114 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (539 kB)  ]    Order
  • Subterahertz oscillations from triple-barrier resonant tunneling diodes with integrated patch antennas
    R. Sekiguchi, Y. Koyama, and T. Ouchi
    Appl. Phys. Lett. 96, 062115 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (118 kB)  ]    Order
  • A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures
    Leng Liao, Kui-juan Jin, Chen Ge, Chun-lian Hu, Hui-bin Lu, and Guo-zhen Yang
    Appl. Phys. Lett. 96, 062116 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (295 kB)  ]    Order
  • MAGNETISM AND SUPERCONDUCTIVITY

  • Perpendicular FePt-based exchange-coupled composite media
    D. Makarov, J. Lee, C. Brombacher, C. Schubert, M. Fuger, D. Suess, J. Fidler, and M. Albrecht
    Appl. Phys. Lett. 96, 062501 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (478 kB)  ]    Order
  • Suppression of complex domain wall behavior in Ni80Fe20 nanowires by oscillating magnetic fields
    K. Weerts, W. Van Roy, G. Borghs, and L. Lagae
    Appl. Phys. Lett. 96, 062502 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (381 kB)  ]    Order
  • Losses in coplanar waveguide resonators at millikelvin temperatures
    P. Macha, S. H. W. van der Ploeg, G. Oelsner, E. Il'ichev, H.-G. Meyer, S. Wünsch, and M. Siegel
    Appl. Phys. Lett. 96, 062503 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (799 kB)  ]    Order
  • Structural defects in LiCoO2 studied by 7Li nuclear magnetic relaxation
    J. S. Kim, K. W. Lee, J. J. Kweon, Cheol Eui Lee, K. Kim, J. Lee, S. J. Noh, and H. S. Kim
    Appl. Phys. Lett. 96, 062504 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (385 kB)  ]    Order
  • Quantum confinement effect on the vacancy-induced spin polarization in carbon, silicon, and germanium nanoparticles: Density functional analysis
    Zhenkui Zhang, Ying Dai, Baibiao Huang, and Myung-Hwan Whangbo
    Appl. Phys. Lett. 96, 062505 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (354 kB)  ]    Order
  • Observation of the large orbital entropy in Zn-doped orbital-spin-coupled system MnV2O4
    X. Luo, Y. P. Sun, W. J. Lu, X. B. Zhu, Z. R. Yang, and W. H. Song
    Appl. Phys. Lett. 96, 062506 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (396 kB)  ]    Order
  • Anisotropic-strain-induced antiferromagnetic-insulating state with strong phase instability in epitaxial (La0.8Pr0.2)0.67Ca0.33MnO3 films
    F. H. Zhang, Z. Huang, G. Y. Gao, P. F. Chen, L. F. Wang, X. L. Tan, and W. B. Wu
    Appl. Phys. Lett. 96, 062507 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (356 kB)  ]    Order
  • Rigid band model for prediction of magnetostriction of iron-gallium alloys
    Y. N. Zhang, J. X. Cao, and R. Q. Wu
    Appl. Phys. Lett. 96, 062508 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (245 kB)  ]    Order
  • DIELECTRICS AND FERROELECTRICITY

  • Ta2O5 polymorphs: Structural motifs and dielectric constant from first principles
    Wanda Andreoni and Carlo A. Pignedoli
    Appl. Phys. Lett. 96, 062901 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (379 kB)  ]    Order
  • First-principles investigations of the dielectric properties of crystalline and amorphous Si3N4 thin films
    T. Anh Pham, Tianshu Li, Sadasivan Shankar, Francois Gygi, and Giulia Galli
    Appl. Phys. Lett. 96, 062902 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (174 kB)  ]    Order
  • Phase coexistence and Mn-doping effect in lead-free ferroelectric (Na1/2Bi1/2)TiO3 crystals
    C.-S. Tu, S.-H. Huang, C.-S. Ku, H.-Y. Lee, R. R. Chien, V. H. Schmidt, and H. Luo
    Appl. Phys. Lett. 96, 062903 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (498 kB)  ]    Order
  • NANOSCALE SCIENCE AND DESIGN

  • Self-assembled templating for the growth of molecular nanodots
    Takashi Yokoyama
    Appl. Phys. Lett. 96, 063101 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (2499 kB)  ]    Order
  • Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures
    A. Gouyé, I. Berbezier, L. Favre, G. Amiard, M. Aouassa, Y. Campidelli, and A. Halimaoui
    Appl. Phys. Lett. 96, 063102 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (406 kB)  ]    Order
  • Strain effects on basal-plane hydrogenation of graphene: A first-principles study
    Kun Xue and Zhiping Xu
    Appl. Phys. Lett. 96, 063103 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (285 kB)  ]    Order
  • Single step, complementary doping of graphene
    Kevin Brenner and Raghunath Murali
    Appl. Phys. Lett. 96, 063104 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (327 kB)  ]    Order
  • Dielectric-loaded surface plasmon polariton waveguides on a finite-width metal strip
    J. Grandidier, G. Colas des Francs, L. Markey, A. Bouhelier, S. Massenot, J.-C. Weeber, and A. Dereux
    Appl. Phys. Lett. 96, 063105 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (191 kB)  ]    Order
  • Dynamic measurement and modeling of the Casimir force at the nanometer scale
    John Kohoutek, Ivy Yoke Leng Wan, and Hooman Mohseni
    Appl. Phys. Lett. 96, 063106 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (302 kB)  ]    Order
  • Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy
    Y. Ogawa, F. Minami, Yohannes Abate, and Stephen R. Leone
    Appl. Phys. Lett. 96, 063107 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (146 kB)  ]    Order
  • Coating geometries of metals on single-walled carbon nanotubes
    Yu He, Jinyu Zhang, Yan Wang, and Zhiping Yu
    Appl. Phys. Lett. 96, 063108 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (349 kB)  ]    Order
  • Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors
    Pouya Hashemi, Meekyung Kim, John Hennessy, Leonardo Gomez, Dimitri A. Antoniadis, and Judy L. Hoyt
    Appl. Phys. Lett. 96, 063109 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (393 kB)  ]    Order
  • Metal-catalyzed crystallization of amorphous carbon to graphene
    Maxwell Zheng, Kuniharu Takei, Benjamin Hsia, Hui Fang, Xiaobo Zhang, Nicola Ferralis, Hyunhyub Ko, Yu-Lun Chueh, Yuegang Zhang, Roya Maboudian, and Ali Javey
    Appl. Phys. Lett. 96, 063110 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (285 kB)  ]    Order
  • Ti-decorated C60 as catalyst for hydrogen generation and storage
    Liping Huang, Ying-Chun Liu, Keith E. Gubbins, and Marco Buongiorno Nardelli
    Appl. Phys. Lett. 96, 063111 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (286 kB)  ]    Order
  • Effect of self-affine fractal characteristics of surfaces on wetting
    S. Sarkar, S. Patra, N. Gayathri, and S. Banerjee
    Appl. Phys. Lett. 96, 063112 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (488 kB)  ]    Order
  • Natural advection from a microcantilever heat source
    Matthew J. Kasper, Vinay K. Natrajan, Natalya L. Privorotskaya, Kenneth T. Christensen, and William P. King
    Appl. Phys. Lett. 96, 063113 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (444 kB)  ]    Order
  • ORGANIC ELECTRONICS AND PHOTONICS

  • Crystallitic orientation effects on charge transport in polythiophene thin-film transistors
    Liping Zhou, Xue-Feng Wang, Qin Han, Jian-Chun Wu, and Zhen-Ya Li
    Appl. Phys. Lett. 96, 063301 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (290 kB)  ]   
  • Reversible optical nonreciprocity in periodic structures with liquid crystals
    Andrey E. Miroshnichenko, Etienne Brasselet, and Yuri S. Kivshar
    Appl. Phys. Lett. 96, 063302 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (727 kB)  ]   
  • MoO3/poly(9,9-dioctylfluorene-co-N-[4-(3-methylpropyl)]-diphenylamine) double-interlayer effect on polymer solar cells
    Jegadesan Subbiah, Do Young Kim, Michael Hartel, and Franky So
    Appl. Phys. Lett. 96, 063303 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (282 kB)  ]   
  • DEVICE PHYSICS

  • Hierarchical nanostructured spherical carbon with hollow core/mesoporous shell as a highly efficient counter electrode in CdSe quantum-dot-sensitized solar cells
    Sheng-Qiang Fan, Baizeng Fang, Jung Ho Kim, Jeum-Jong Kim, Jong-Sung Yu, and Jaejung Ko
    Appl. Phys. Lett. 96, 063501 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (252 kB)  ]    Order
  • High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation
    Bhumika Chhabra, Stuart Bowden, Robert L. Opila, and Christiana B. Honsberg
    Appl. Phys. Lett. 96, 063502 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (208 kB)  ]    Order
  • On the origin of leakage current reduction in TiO2 passivated porosus silicon Schottky-barrier diode
    J. D. Hwang and C. H. Chou
    Appl. Phys. Lett. 96, 063503 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (357 kB)  ]    Order
  • Interband cascade photovoltaic devices
    Rui Q. Yang, Zhaobing Tian, J. F. Klem, Tetsuya D. Mishima, Michael B. Santos, and Matthew B. Johnson
    Appl. Phys. Lett. 96, 063504 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (242 kB)  ]    Order
  • Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor
    Jung-Hui Tsai, Yuan-Hong Lee, Ning-Feng Dale, Jhih-Syuan Sheng, Yung-Chun Ma, and Sheng-Shiun Ye
    Appl. Phys. Lett. 96, 063505 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (184 kB)  ]    Order
  • Polymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices
    Jianyong Ouyang and Yang Yang
    Appl. Phys. Lett. 96, 063506 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (110 kB)  ]    Order
  • BIOPHYSICS AND BIO-INSPIRED SYSTEMS

  • Cleavage pattern of DNA caused by endonuclease: Theoretical modeling and experimental verification
    Shio Inagaki, Li Liu, Masahiro Takinoue, and Kenichi Yoshikawa
    Appl. Phys. Lett. 96, 063701 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (152 kB)  ]    Order
  • Enhanced photothermal therapy assisted with gold nanorods using a radially polarized beam
    Hong Kang, Baohua Jia, Jingliang Li, Dru Morrish, and Min Gu
    Appl. Phys. Lett. 96, 063702 (2010) (3 pages)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (356 kB)  ]    Order
  • ERRATA

  • Erratum: “Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors” [Appl. Phys. Lett. 95, 193503 (2009]
    Pradipta K. Nayak, Jongsu Jang, Changhee Lee, and Yongtaek Hong
    Appl. Phys. Lett. 96, 069901 (2010) (1 page)
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (30 kB)  ]   
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