Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

May 2011

Volume 29, Issue 3, Articles 030601-03C137

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Letters
	Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas K. H. Choi, S. H. Lee, J. H. Park, K. Y. Sohn, J. W. Lee, and S. J. Pearton J. Vac. Sci. Technol. B 29, 030601 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (407 kB)  ]    Order
	Transfer of carbon nanosheet films to nongrowth, zero thermal budget substrates Ronald A. Quinlan, Artjay Javier, Edward E. Foos, Leonard Buckley, Mingyao Zhu, Kun Hou, Erika Widenkvist, Martin Drees, Ulf Jansson, and Brian C. Holloway J. Vac. Sci. Technol. B 29, 030602 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (411 kB)  ]    Order
	Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition: Effect of growth temperature Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Wei Wang, Qi Wang, Yongqing Huang, and Xia Zhang J. Vac. Sci. Technol. B 29, 030603 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (367 kB)  ]    Order
	Surface stiffness modification by e-beam irradiation for stem cell growth control Bing-Rui Lu, Mathieu Lanniel, Morgan Alexandar, Ran Liu, Yifang Chen, and Ejaz Huq J. Vac. Sci. Technol. B 29, 030604 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (397 kB)  ]    Order
	Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers Tonmoy Chakraborty, Daniel Greenslit, and Eric T. Eisenbraun J. Vac. Sci. Technol. B 29, 030605 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1145 kB)  ]    Order
Electronic & Optoelectronic Materials, Devices & Processing
	Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering Myung Soo Huh, Seok-Jun Won, Bong Seob Yang, Seungha Oh, Myeong Sook Oh, Jae Kyeong Jeong, and Hyeong Joon Kim J. Vac. Sci. Technol. B 29, 031201 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (324 kB)  ]    Order
	Novel postetch process to realize high quality photonic crystals in InP N. Shahid, S. Naureen, M. Y. Li, M. Swillo, and S. Anand J. Vac. Sci. Technol. B 29, 031202 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (270 kB)  ]    Order
	Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz Souvik Kundu, Sandipta Roy, P. Banerji, Supratic Chakraborty, and T. Shripathi J. Vac. Sci. Technol. B 29, 031203 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (735 kB)  ]    Order
	Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors Hyeongnam Kim, Michael L. Schuette, and Wu Lu J. Vac. Sci. Technol. B 29, 031204 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (323 kB)  ]    Order
	Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors C. F. Lo, F. Ren, C. Y. Chang, S. J. Pearton, S.-H. Chen, C.-M. Chang, S.-Y. Wang, J.-I. Chyi, and I. I. Kravchenko J. Vac. Sci. Technol. B 29, 031205 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (572 kB)  ]    Order
	Fabrication of high-aspect-ratio lightpipes Winnie N. Ye, Peter Duane, Munib Wober, and Kenneth B. Crozier J. Vac. Sci. Technol. B 29, 031206 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (432 kB)  ]    Order
	Comprehensive comparison of electrical and reliability characteristics of various copper barrier films Yi-Lung Cheng, Jiung Wu, Tai-Jung Chiu, Shiuan-An Chen, and Ying-Lang Wang J. Vac. Sci. Technol. B 29, 031207 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (700 kB)  ]    Order
	Antireflection properties and solar cell application of silicon nanostructures Huihui Yue, Rui Jia, Chen Chen, Wuchang Ding, Yanlong Meng, Deqi Wu, Dawei Wu, Wei Chen, Xinyu Liu, Zhi Jin, Wenwu Wang, and Tianchun Ye J. Vac. Sci. Technol. B 29, 031208 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (714 kB)  ]    Order
	Analysis of charging effects on highly resistive materials under electron irradiation by using transient-absorbed-current method Natsuki Tsuno, Yusuke Ominami, Hiroya Ohta, Hiroyuki Shinada, Hiroshi Makino, and Yoshinobu Kimura J. Vac. Sci. Technol. B 29, 031209 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (255 kB)  ]    Order
	Growth and transport studies of BaMn2As2 thin films Dang Duc Dung, Wuwei Feng, and Sunglae Cho J. Vac. Sci. Technol. B 29, 031210 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (846 kB)  ]    Order
	Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors Chien-Fong Lo, T. S. Kang, L. Liu, F. Ren, S. J. Pearton, Jinhyung Kim, S. Jang, O. Laboutin, Y. Cao, and J. W. Johnson J. Vac. Sci. Technol. B 29, 031211 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (478 kB)  ]    Order
	Ultranarrow bandpass filter with wide nontransmission region composed of randomly distributed layer thicknesses Guibin Chen and Haichun Yu J. Vac. Sci. Technol. B 29, 031212 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (144 kB)  ]    Order
	Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere S.-N. Wu, S.-Q. Yu, D. Ding, S. R. Johnson, and Y.-H. Zhang J. Vac. Sci. Technol. B 29, 031213 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (411 kB)  ]    Order
Energy Conversion and Storage Devices
	Cryogenic thermal simulator for testing low temperature thermophotovoltaic cells Dante F. DeMeo and Thomas E. Vandervelde J. Vac. Sci. Technol. B 29, 031401 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (582 kB)  ]    Order
Nanometer Science & Technology
	Nanostructure and magnetic properties of c-axis oriented L10-FePt nanoparticles and nanocrystalline films on polycrystalline TiN underlayers Yoshiko Tsuji, Suguru Noda, and Shinichi Nakamura J. Vac. Sci. Technol. B 29, 031801 (2011) (10 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1789 kB)  ]    Order
	Electric potential of a metallic nanowall between cathode and anode planes Xizhou Qin, Weiliang Wang, and Zhibing Li J. Vac. Sci. Technol. B 29, 031802 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (252 kB)  ]    Order
	Effects of segregation strength and an external field on the thermal line edge and line width roughness spectra of a diblock copolymer resist August W. Bosse J. Vac. Sci. Technol. B 29, 031803 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (425 kB)  ]    Order
	Polarity controlled InAs{111} films grown on Si(111) Akihiro Ohtake and Kazutaka Mitsuishi J. Vac. Sci. Technol. B 29, 031804 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (322 kB)  ]    Order
	Fabrication of ordered Au nanodot arrays utilizing anodic aluminum oxide templates formed on Si substrate Namyong Kwon, Namkyu Kim, Jekwan Yeon, Geunyoung Yeom, and Ilsub Chung J. Vac. Sci. Technol. B 29, 031805 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1478 kB)  ]    Order
MEMS & NEMS
	Rapid serial prototyping of magnet-tipped attonewton-sensitivity cantilevers by focused ion beam manipulation Jonilyn G. Longenecker, Eric W. Moore, and John A. Marohn J. Vac. Sci. Technol. B 29, 032001 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (608 kB)  ]    Order
Microelectronic & Nanoelectronic Devices
	Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasma-enhanced chemical vapor deposition dielectrics Adam M. Urbanowicz, Kris Vanstreels, Patrick Verdonck, Els Van Besien, Trompoukis Christos, Denis Shamiryan, Stefan De Gendt, and Mikhail R. Baklanov J. Vac. Sci. Technol. B 29, 032201 (2011) (9 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (729 kB)  ]    Order
	Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy Jun Zhu, Jing Jing, Wenbo Luo, Yin Zhang, and Yanrong Li J. Vac. Sci. Technol. B 29, 032202 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (458 kB)  ]    Order
	Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode Shu-Tong Chang, Chang-Chun Lee, and P.-H. Sun J. Vac. Sci. Technol. B 29, 032203 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (244 kB)  ]    Order
	Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jinhyung Kim, Chih-Yang Chang, Erica A. Douglas, Soohwan Jang, David. J. Smith, S. J. Pearton, Wayne J. Johnson, and Fan Ren J. Vac. Sci. Technol. B 29, 032204 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (405 kB)  ]    Order
	Integration of thin film transistors and vertical thin film field emitter arrays using ion-induced bending Tomoya Yoshida, Takashi Nishi, Masayoshi Nagao, Takashi Shimizu, and Seigo Kanemaru J. Vac. Sci. Technol. B 29, 032205 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (523 kB)  ]    Order
	Increasing the speed of solid-state nanopores Philip S. Waggoner, Aaron T. Kuan, Stas Polonsky, Hongbo Peng, and Stephen M. Rossnagel J. Vac. Sci. Technol. B 29, 032206 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (402 kB)  ]    Order
	Phase change random access memory featuring silicide metal contact and high- interlayer for operation power reduction Lina Wei-Wei Fang, Rong Zhao, Kian-Guan Lim, Hongxin Yang, Luping Shi, Tow-Chong Chong, and Yee-Chia Yeo J. Vac. Sci. Technol. B 29, 032207 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (383 kB)  ]    Order
	Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry Matthieu Py, Jean-Paul Barnes, Rachid Boujamaa, Michael Gros-Jean, Kaoru Nakajima, Kenji Kimura, Charbel Roukoss, Bernard Pelissier, and Narciso Gambacorti J. Vac. Sci. Technol. B 29, 032208 (2011) (9 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (685 kB)  ]    Order
	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors Xingui Zhang, Huaxin Guo, Hau-Yu Lin, Chao-Ching Cheng, Chih-Hsin Ko, Clement H. Wann, Guang-Li Luo, Chun-Yen Chang, Chao-Hsin Chien, Zong-You Han, Shih-Chiang Huang, Hock-Chun Chin, Xiao Gong, Shao-Ming Koh, Phyllis Shi Ya Lim et al. J. Vac. Sci. Technol. B 29, 032209 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (373 kB)  ]    Order
	Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching Tomohiko Sugiyama, Iwao Ohwada, Tsutomu Nanataki, Yukihisa Moriguchi, Osamu Eryu, Masaya Ichimura, and Manabu Gomi J. Vac. Sci. Technol. B 29, 032210 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (372 kB)  ]    Order
	High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm Myungsim Jun, Youngsam Park, Younghoon Hyun, Taehyoung Zyung, Moongyu Jang, and Sung-Jin Choi J. Vac. Sci. Technol. B 29, 032211 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (349 kB)  ]    Order
Brief Reports and Comments
	Gradual pressure release for reliable nanoimprint lithography Jung-Sub Wi, Robert J. Wilson, Robert M. White, and Shan X. Wang J. Vac. Sci. Technol. B 29, 033001 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (337 kB)  ]    Order
27th North American Conference on Molecular Beam Epitaxy
	Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices H. J. Haugan, G. J. Brown, and L. Grazulis J. Vac. Sci. Technol. B 29, 03C101 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (535 kB)  ]    Order
	II-VI heterostructures obtained by encapsulation of colloidal CdSe nanowires by molecular beam epitaxy deposition of ZnSe Xinyu Liu, A. M. Mintairov, J. Herzog, F. Vietmeyer, R. E. Pimpinella, M. Kuno, J. L. Merz, T. H. Kosel, M. Dobrowolska, and J. K. Furdyna J. Vac. Sci. Technol. B 29, 03C102 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (337 kB)  ]    Order
	Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces Paul J. Simmonds, John Simon, Jerry M. Woodall, and Minjoo Larry Lee J. Vac. Sci. Technol. B 29, 03C103 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (305 kB)  ]    Order
	Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs Jason K. Kawasaki, Rainer Timm, Trevor E. Buehl, Edvin Lundgren, Anders Mikkelsen, Arthur C. Gossard, and Chris J. Palmstrøm J. Vac. Sci. Technol. B 29, 03C104 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (446 kB)  ]    Order
	Localized dry-etch substrate thinning for dislocation reduction in heteroepitaxial CdTe/Si(211) R. N. Jacobs, J. K. Markunas, C. Nozaki, M. Jaime-Vasquez, P. J. Smith, J. D. Benson, and J. Pellegrino J. Vac. Sci. Technol. B 29, 03C105 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (473 kB)  ]    Order
	Molecular beam epitaxy growth of InGaN-GaN superlattices for optoelectronic devices Chris Boney, David Starikov, Ivan Hernandez, Rajeev Pillai, and Abdelhak Bensaoula J. Vac. Sci. Technol. B 29, 03C106 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (534 kB)  ]    Order
	AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy W. E. Hoke, T. D. Kennedy, J. J. Mosca, A. J. Kerr, A. Torabi, S. Davis-Hearns, and J. R. LaRoche J. Vac. Sci. Technol. B 29, 03C107 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (487 kB)  ]    Order
	Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy Trevor E. Buehl, Christopher J. Palmstrøm, and Arthur C. Gossard J. Vac. Sci. Technol. B 29, 03C108 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (552 kB)  ]    Order
	Antimonide-based pN terahertz mixer diodes R. Magno, J. G. Champlain, H. S. Newman, and D. Park J. Vac. Sci. Technol. B 29, 03C109 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (253 kB)  ]    Order
	Effect of strain and confinement on the effective mass of holes in InSb quantum wells C. K. Gaspe, M. Edirisooriya, T. D. Mishima, P. A. R. Dilhani Jayathilaka, R. E. Doezema, S. Q. Murphy, M. B. Santos, L. C. Tung, and Y.-J. Wang J. Vac. Sci. Technol. B 29, 03C110 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (421 kB)  ]    Order
	Substrate wobble compensation for in situ spectroscopic ellipsometry measurements Blaine Johs and Ping He J. Vac. Sci. Technol. B 29, 03C111 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (634 kB)  ]    Order
	Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells Sudhakar Bharatan, Shanthi Iyer, Jia Li, Thomas A. Rawdanowicz, and Lewis Reynolds, Jr. J. Vac. Sci. Technol. B 29, 03C112 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (715 kB)  ]    Order
	High power 1.25  µm InAs quantum dot vertical external-cavity surface-emitting laser Alexander R. Albrecht, Christopher P. Hains, Thomas J. Rotter, Andreas Stintz, Kevin J. Malloy, Ganesh Balakrishnan, and Jerome V. Moloney J. Vac. Sci. Technol. B 29, 03C113 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (297 kB)  ]    Order
	Growth and characterization of TbAs:GaAs nanocomposites Laura E. Cassels, Trevor E. Buehl, Peter G. Burke, Chris J. Palmstrøm, Art C. Gossard, Gilles Pernot, Ali Shakouri, Chelsea R. Haughn, Matthew F. Doty, and Joshua M. O. Zide J. Vac. Sci. Technol. B 29, 03C114 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (421 kB)  ]    Order
	Low-misfit epilayer analyses using in situ wafer curvature measurements Ryan France and Aaron J. Ptak J. Vac. Sci. Technol. B 29, 03C115 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (423 kB)  ]    Order
	Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation J. Buschbeck, J. Kawasaki, T. E. Buehl, A. C. Gossard, and C. J. Palmstrøm J. Vac. Sci. Technol. B 29, 03C116 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (369 kB)  ]    Order
	Electrical properties of Er-doped In0.53Ga0.47As Peter G. Burke, Hong Lu, Nicholas G. Rudawski, Susanne Stemmer, Arthur C. Gossard, Je-Hyeong Bahk, and John E. Bowers J. Vac. Sci. Technol. B 29, 03C117 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (840 kB)  ]    Order
	Molecular beam epitaxy of metamorphic InyGa1−yP solar cells on mixed anion GaAsxP1−x/GaAs graded buffers Stephanie Tomasulo, John Simon, Paul J. Simmonds, Jonathan Biagiotti, and Minjoo L. Lee J. Vac. Sci. Technol. B 29, 03C118 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (497 kB)  ]    Order
	Optical measurements of single CdTe self-assembled quantum dots grown on ZnTe/GaSb R. E. Pimpinella, A. M. Mintairov, X. Liu, T. H. Kosel, J. L. Merz, J. K. Furdyna, and M. Dobrowolska J. Vac. Sci. Technol. B 29, 03C119 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (351 kB)  ]    Order
	Two-dimensional III-V nucleation on Si for nonlinear optics Angie C. Lin, James S. Harris, and M. M. Fejer J. Vac. Sci. Technol. B 29, 03C120 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (625 kB)  ]    Order
	Atomic ordering and phase separation in MBE GaAs1−xBix Andrew G. Norman, Ryan France, and Aaron J. Ptak J. Vac. Sci. Technol. B 29, 03C121 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (390 kB)  ]    Order
	Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric W. H. Chang, T. H. Chiang, Y. D. Wu, M. Hong, C. A. Lin, and J. Kwo J. Vac. Sci. Technol. B 29, 03C122 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (413 kB)  ]    Order
	Enhanced normal incidence photocurrent in quantum dot infrared photodetectors Jiayi Shao, Thomas E. Vandervelde, Ajit Barve, Woo-Yong Jang, Andreas Stintz, and Sanjay Krishna J. Vac. Sci. Technol. B 29, 03C123 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (414 kB)  ]    Order
	Epitaxial growth of CoxMnySiz (111) thin films in the compositional range around the Heusler alloy Co2MnSi Liang He, Brian A. Collins, Frank Tsui, and Yong S. Chu J. Vac. Sci. Technol. B 29, 03C124 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (598 kB)  ]    Order
	In situ real time Auger analyses during oxides and alloy growth using a new spectrometer design Philippe G. Staib J. Vac. Sci. Technol. B 29, 03C125 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (719 kB)  ]    Order
	Metamorphic growth of III-V semiconductor bicrystals C. J. K. Richardson, L. He, and S. Kanakaraju J. Vac. Sci. Technol. B 29, 03C126 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (457 kB)  ]    Order
	Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy A. V. Katkov, C. C. Wang, J. Y. Chi, C. Cheng, and A. K. Gutakovskii J. Vac. Sci. Technol. B 29, 03C127 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (505 kB)  ]    Order
	Single-crystalline aluminum grown on MgAl2O4 spinel using molecular-beam epitaxy Y. Lin, A. G. Norman, W. E. McMahon, H. R. Moutinho, C.-S. Jiang, and A. J. Ptak J. Vac. Sci. Technol. B 29, 03C128 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (523 kB)  ]    Order
	Reflection high energy electron diffraction investigation and comparison of the initial stage during molecular beam epitaxy of AlN on Si(111) and Si(110) substrates Vladimir Mansurov, Xiaoyan Xu, Mahesh Pandikunta, Rakib Uddin, and Sergey Nikishin J. Vac. Sci. Technol. B 29, 03C129 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (194 kB)  ]    Order
	Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers S. P. R. Clark, P. Ahirwar, F. T. Jaeckel, C. P. Hains, A. R. Albrecht, T. J. Rotter, L. R. Dawson, G. Balakrishnan, P. E. Hopkins, L. M. Phinney, J. Hader, and J. V. Moloney J. Vac. Sci. Technol. B 29, 03C130 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (258 kB)  ]    Order
	Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation A. Posadas, R. Dargis, M. R. Choi, A. Slepko, A. A. Demkov, J. J. Kim, and D. J. Smith J. Vac. Sci. Technol. B 29, 03C131 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (849 kB)  ]    Order
	High In content InxGa1−xN grown by energetic neutral atom beam lithography and epitaxy under slightly N-rich conditions Todd L. Williamson, Joshua J. Williams, Jonathan C. D. Hubbard, and Mark A. Hoffbauer J. Vac. Sci. Technol. B 29, 03C132 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (459 kB)  ]    Order
	Atomic-scale modeling of InxGa1−xN quantum dot self-assembly Zhenli Zhang, Alok Chatterjee, Christoph Grein, Anthony J. Ciani, and Peter W. Chung J. Vac. Sci. Technol. B 29, 03C133 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1409 kB)  ]    Order
	Growth of AlGaN containing nanometer scale compositional inhomogeneities for ultraviolet light emitters A. V. Sampath, G. A. Garrett, R. W. Enck, P. Rottella, Jr., H. Shen, and M. Wraback J. Vac. Sci. Technol. B 29, 03C134 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (243 kB)  ]    Order
	High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy Marta Sawicka, Anna Feduniewicz-Żmuda, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Marcin Kryśko, Igor Dzicielewski, Izabella Grzegory, and Czesaw Skierbiszewski J. Vac. Sci. Technol. B 29, 03C135 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (420 kB)  ]    Order
	Growth mechanism of InGaN by plasma assisted molecular beam epitaxy H. Turski, M. Siekacz, M. Sawicka, G. Cywinski, M. Krysko, S. Grzanka, J. Smalc-Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, and C. Skierbiszewski J. Vac. Sci. Technol. B 29, 03C136 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (446 kB)  ]    Order
	Photoluminescence and secondary ion mass spectrometry study of layer-by-layer grown Zn1−xCdxSe quantum wells I. Hernández-Calderón, M. García-Vázquez, L. M. Hernández-Ramírez, and M. A. Vidal J. Vac. Sci. Technol. B 29, 03C137 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (158 kB)  ]    Order

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