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jueves, 30 de septiembre de 2010

Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures


Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

September 2010

Volume 28, Issue 5, pp. L39-1072

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Letters

  • Fabrication of antireflection-structured surface using vertical nanowires as an initial structure
    Keisuke Nagato, Hiroki Moritani, Tetsuya Hamaguchi, and Masayuki Nakao
    pp. L39-L42

    Abstract   Full Text: [ Read Online (HTML)   PDF  (398 kB)  ]    Order
  • Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates
    R. Khanna, E. A. Douglas, D. P. Norton, S. J. Pearton, and F. Ren
    pp. L43-L46

    Abstract   Full Text: [ Read Online (HTML)   PDF  (284 kB)  ]    Order
  • Proton irradiation effects on AlN/GaN high electron mobility transistors
    C. F. Lo, C. Y. Chang, B. H. Chu, H.-Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David. J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, and F. Ren
    pp. L47-L51

    Abstract   Full Text: [ Read Online (HTML)   PDF  (407 kB)  ]    Order
  • Radioisotope-powered ion gauge with super high stability, long life, and large sensitivity range from ultrahigh vacuum to high pressure
    Yuerui Lu and Amit Lal
    pp. L52-L54

    Abstract   Full Text: [ Read Online (HTML)   PDF  (134 kB)  ]    Order
  • Stabilization of a tungsten <310> cold field emitter
    Keigo Kasuya, Souichi Katagiri, Takashi Ohshima, and Shigeru Kokubo
    pp. L55-L60

    Abstract   Full Text: [ Read Online (HTML)   PDF  (441 kB)  ]    Order
  • Articles

  • Photoyield recovery of Cs+NF3 activated negative electron affinity GaAs photoemitters without additional alkali deposition
    G. A. Mulhollan and J. C. Bierman
    pp. 899-902

    Abstract   Full Text: [ Read Online (HTML)   PDF  (87 kB)  ]    Order
  • Integrated high-inductance three-dimensional toroidal inductors
    Lin Yu, Dae-Hee Weon, Jeong-Il Kim, and Saeed Mohammadi
    pp. 903-907

    Abstract   Full Text: [ Read Online (HTML)   PDF  (300 kB)  ]    Order
  • InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
    M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, S. Doğan, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, and Chang-Zhi Lu
    pp. 908-911

    Abstract   Full Text: [ Read Online (HTML)   PDF  (520 kB)  ]    Order
  • TiN thin film resistors for monolithic microwave integrated circuits
    Anna Malmros, Mattias Südow, Kristoffer Andersson, and Niklas Rorsman
    pp. 912-915

    Abstract   Full Text: [ Read Online (HTML)   PDF  (137 kB)  ]    Order
  • Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts
    L. F. Voss, Q. Shao, C. E. Reinhardt, R. T. Graff, A. M. Conway, R. J. Nikolić, Nirmalendu Deo, and Chin Li Cheung
    pp. 916-920

    Abstract   Full Text: [ Read Online (HTML)   PDF  (340 kB)  ]    Order
  • Micro- and nanopatterned polymethylmethacrylate layers on plastic poly(ethylene terephthalate) substrates by modified roller-reversal imprint process
    Chiao-Yang Cheng, Franklin Chau-Nan Hong, and Chun-Yuan Huang
    pp. 921-925

    Abstract   Full Text: [ Read Online (HTML)   PDF  (387 kB)  ]    Order
  • Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
    Camille Petit-Etienne, Maxime Darnon, Laurent Vallier, Erwine Pargon, Gilles Cunge, François Boulard, Olivier Joubert, Samer Banna, and Thorsten Lill
    pp. 926-934

    Abstract   Full Text: [ Read Online (HTML)   PDF  (358 kB)  ]    Order
  • High-resolution transmission-electron microscope characterization of onionlike carbon transformed from nanodiamond
    Q. Zou, M. Z. Wang, Y. G. Li, and B. Lu
    pp. 935-939

    Abstract   Full Text: [ Read Online (HTML)   PDF  (844 kB)  ]    Order
  • Direct-write electron beam lithography in silicon dioxide at low energy
    Arnaud Beaumont, Christian Dubuc, Jacques Beauvais, and Dominique Drouin
    pp. 940-945

    Abstract   Full Text: [ Read Online (HTML)   PDF  (520 kB)  ]    Order
  • Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2
    Christoph Ebm, Gerhard Hobler, Simon Waid, and Heinz D. Wanzenboeck
    pp. 946-951

    Abstract   Full Text: [ Read Online (HTML)   PDF  (415 kB)  ]    Order
  • Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. I. Process performance and influence on ULK material modification
    Ming-Shu Kuo, A. R. Pal, G. S. Oehrlein, P. Lazzeri, and M. Anderle
    pp. 952-960

    Abstract   Full Text: [ Read Online (HTML)   PDF  (370 kB)  ]    Order
  • Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. II. Interaction with preceding fluorocarbon plasma ultralow k etching processes
    Ming-Shu Kuo, A. R. Pal, G. S. Oehrlein, and Xuefeng Hua
    pp. 961-967

    Abstract   Full Text: [ Read Online (HTML)   PDF  (390 kB)  ]    Order
  • Degradation behavior of release layers for nanoimprint lithography formed on atomically flat Si(111) terraces
    Kosuke Kuwabara, Akihiro Miyauchi, and Hiroyuki Sugimura
    pp. 968-972

    Abstract   Full Text: [ Read Online (HTML)   PDF  (639 kB)  ]    Order
  • Line-width dependency on electromigration performance for long and short copper interconnects
    Yi-Lung Cheng, We-Yuan Chang, and Ying-Lang Wang
    pp. 973-977

    Abstract   Full Text: [ Read Online (HTML)   PDF  (407 kB)  ]    Order
  • Silicon on insulator nanoscale backside interconnects for atomic and molecular scale circuits
    Ma Han Thu Lwin, Thet Naing Tun, Hui Hui Kim, R. S. Kajen, N. Chandrasekhar, and C. Joachim
    pp. 978-984

    Abstract   Full Text: [ Read Online (HTML)   PDF  (1594 kB)  ]    Order
  • Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
    Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill, Damon B. Farmer, Marcus Freitag, Yanning Sun, Shu-Jen Han, Zhihong Chen, Keith A. Jenkins, Yu Zhu, Zihong Liu, Timothy J. McArdle, John A. Ott, Robert Wisnieff, and Phaedon Avouris
    pp. 985-992

    Abstract   Full Text: [ Read Online (HTML)   PDF  (652 kB)  ]    Order
  • Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry
    F. Weilnboeck, R. L. Bruce, S. Engelmann, G. S. Oehrlein, D. Nest, T.-Y. Chung, D. Graves, M. Li, D. Wang, C. Andes, and E. A. Hudson
    pp. 993-1004

    Abstract   Full Text: [ Read Online (HTML)   PDF  (1146 kB)  ]    Order
  • Device characteristics of HfON charge-trap layer nonvolatile memory
    Tackhwi Lee and Sanjay K. Banerjee
    pp. 1005-1010

    Abstract   Full Text: [ Read Online (HTML)   PDF  (248 kB)  ]    Order
  • GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide
    A. Y. Polyakov, A. V. Markov, M. P. Duhnovsky, M. V. Mezhennyi, A. A. Donskov, S. S. Malakhov, A. V. Govorkov, Yu. P. Kozlova, V. F. Pavlov, N. B. Smirnov, T. G. Yugova, A. I. Belogorokhov, I. A. Belogorokhov, A. K. Ratnikova, Yu. Yu. Fyodorov et al.
    pp. 1011-1015

    Abstract   Full Text: [ Read Online (HTML)   PDF  (388 kB)  ]    Order
  • Enhanced electron-field emission from nanodiamond ridge-structured emission arrays capped on micropatterned silicon pillars
    N. Ghosh, W. P. Kang, J. L. Davidson, and S. Raina
    pp. 1016-1019

    Abstract   Full Text: [ Read Online (HTML)   PDF  (307 kB)  ]    Order
  • Modified postannealing of the Ge condensation process for better-strained Si material and devices
    Xuyan Liu, Xiaobo Ma, Xiaofeng Du, Weili Liu, Zhitang Song, and Chenglu Lin
    pp. 1020-1025

    Abstract   Full Text: [ Read Online (HTML)   PDF  (806 kB)  ]    Order
  • Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry
    M. Prunnila, M. Meschke, D. Gunnarsson, S. Enouz-Vedrenne, J. M. Kivioja, and J. P. Pekola
    pp. 1026-1029

    Abstract   Full Text: [ Read Online (HTML)   PDF  (923 kB)  ]    Order
  • Holographic realization of hexagonal two dimensional photonic crystal structures with elliptical geometry
    Yung-Jr Hung, San-Liang Lee, Yen-Ting Pan, Brian J. Thibeault, and Larry A. Coldren
    pp. 1030-1038

    Abstract   Full Text: [ Read Online (HTML)   PDF  (1258 kB)  ]    Order
  • a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers
    A. Y. Polyakov, A. V. Markov, M. V. Mezhennyi, A. A. Donskov, S. S. Malakhov, A. V. Govorkov, Yu. P. Kozlova, V. F. Pavlov, N. B. Smirnov, T. G. Yugova, I.-H. Lee, J. Han, Q. Sun, and S. J. Pearton
    pp. 1039-1043

    Abstract   Full Text: [ Read Online (HTML)   PDF  (247 kB)  ]    Order
  • Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
    Chih-Yang Chang, Travis Anderson, Jennifer Hite, Liu Lu, Chien-Fong Lo, Byung-Hwan Chu, D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, Patrick Whiting, R. Holzworth, K. S. Jones, Soohwan Jang et al.
    pp. 1044-1047

    Abstract   Full Text: [ Read Online (HTML)   PDF  (525 kB)  ]    Order
  • Spatial coherence in electron-beam patterning
    Ginusha M. Perera, Gila E. Stein, and J. Alexander Liddle
    pp. 1048-1055

    Abstract   Full Text: [ Read Online (HTML)   PDF  (421 kB)  ]    Order
  • Effects of nanoscale Ni, Al, and Ni–Al interlayers on nucleation and growth of diamond on Si
    Y. S. Li, Y. Tang, Q. Yang, and A. Hirose
    pp. 1056-1059

    Abstract   Full Text: [ Read Online (HTML)   PDF  (422 kB)  ]    Order
  • Electron emission from silicon tip arrays controlled by np junction minority carrier injection
    Robert M. Young, Harvey C. Nathanson, Robert S. Howell, Eric J. Stewart, Bettina A. Nechay, Timothy T. Braggins, Eric M. Graves, Stephen D. Van Campen, R. Christopher Clarke, Scott B. Miserendino, and Jonathan Hawk
    pp. 1060-1065

    Abstract   Full Text: [ Read Online (HTML)   PDF  (353 kB)  ]    Order
  • Brief Reports and Comments

  • Investigation of the behavior of serum and plasma in a microfluidics system
    J. Caroline Henderson, Michele Yacopucci, ChangJu Chun, Keith Lenghaus, Frank Sommerhage, and James J. Hickman
    pp. 1066-1069

    Abstract   Full Text: [ Read Online (HTML)   PDF  (102 kB)  ]    Order
  • Comparative study on the nonperiodic and periodic gratings for scanning probe microscopy drift measurements
    Dun Niu, Jiawen Li, Yuhang Chen, and Wenhao Huang
    pp. 1070-1072

    Abstract   Full Text: [ Read Online (HTML)   PDF  (392 kB)  ]    Order
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