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ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 12, 2010


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Volume 54, Issue 12,  Pages 1493-1700 (December 2010)

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 1. Editorial Board   

Page IFC


 
  Letters
 2. Improved characteristics of Gd2O3 nanocrystal memory with substrate high–low junction   

Pages 1493-1496
Jer-Chyi Wang, Chih-Ting Lin, Chao-Sung Lai, Jui-Lin Hsu, Chi-Fong Ai

 
 3. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors   

Pages 1497-1499
S.W. Tsao, T.C. Chang, S.Y. Huang, M.C. Chen, S.C. Chen, C.T. Tsai, Y.J. Kuo, Y.C. Chen, W.C. Wu

 
 4. Extraction of trap densities in poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on temperature and time of post annealing   

Pages 1500-1504
Mutsumi Kimura

 
  Regular Papers
 5. Modelling and optimization of III/V transistors with matrices of nanowires   Original Research Article

Pages 1505-1510
Christian Larsen, Mats Ärlelid, Erik Lind, Lars-Erik Wernersson

 
 6. Multiple steady state current–voltage characteristics in drift–diffusion modelisation of N type and semi-insulating GaAs Gunn structures   Original Research Article

Pages 1511-1519
J.C. Manifacier

 
 7. Thermal design and analysis of multi-chip LED module with ceramic substrate   Original Research Article

Pages 1520-1524
Luqiao Yin, Lianqiao Yang, Weiqiao Yang, Yansheng Guo, Kejun Ma, Shuzhi Li, Jianhua Zhang

 
 8. Performance and analytical modeling of Metal–Insulator-Metal Field Controlled Tunnel Transistors   Original Research Article

Pages 1525-1531
M. Ferrier, D. Zhang, P. Griffin, R. Clerc, S. Monfray, T. Skotnicki, Yoshio Nishi

 
 9. Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode   Original Research Article

Pages 1532-1535
Miin-Horng Juang, Y.S. Peng, J.L. Wang, D.C. Shye, C.C. Hwang, S.-L. Jang

 
 10. Deep micro-machining of poly-ethylene terephthalate for plastic MEMS applications   Original Research Article

Pages 1536-1542
H. Pajouhi, S. Mohajerzadeh, F. Nayeri, Z. Sanaee

 
 11. Investigation of carbon nanotube field emitter geometry for increased current density   Original Research Article

Pages 1543-1548
Jeremy L. Silan, Darrell L. Niemann, Bryan P. Ribaya, Mahmud Rahman, M. Meyyappan, Cattien V. Nguyen

 
 12. Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers   Original Research Article

Pages 1549-1553
Wang Zhang, Nuri W. Emanetoglu, Neal Bambha, Justin R. Bickford

 
 13. Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments   Original Research Article

Pages 1554-1560
K.C. Praveen, N. Pushpa, Y.P. Prabakara Rao, G. Govindaraj, John D. Cressler, A.P. Gnana Prakash

 
 14. The low leakage current in floating body GaN metal oxide semiconductor field effect transistors   Original Research Article

Pages 1561-1565
Tatsuya Fujishima, Hirotaka Otake, Yasushi Nanishi, Hiroaki Ohta

 
 15. Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling   Original Research Article

Pages 1566-1571
Kejun Xia, Guofu Niu

 
 16. Performance optimization of conventional MOS-like carbon nanotube FETs with realistic contacts based on stair-case doping strategy   Original Research Article

Pages 1572-1577
Zhou Hai-liang, Zhang Min-xuan, Hao Yue

 
 17. Patch antenna coupled 0.2 THz TUNNETT oscillators   Original Research Article

Pages 1578-1581
Sundararajan Balasekaran, Kazuomi Endo, Tadao Tanabe, Yutaka Oyama

 
 18. Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode   Original Research Article

Pages 1582-1585
Ji-Hyuk Choi, Sachindra Nath Das, Kyeong-Ju Moon, Jyoti Prakash Kar, Jae-Min Myoung

 
 19. Analytical modeling of quantum threshold voltage for triple gate MOSFET   Original Research Article

Pages 1586-1591
P. Rakesh Kumar, Santanu Mahapatra

 
 20. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs   Original Research Article

Pages 1592-1597
M. Rodrigues, J.A. Martino, A. Mercha, N. Collaert, E. Simoen, C. Claeys

 
 21. Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions   Original Research Article

Pages 1598-1601
Siyang Liu, Weifeng Sun, Qinsong Qian, Jing Zhu

 
 22. Effects of arsenic-ion beam density on defect evolution in polysilicon films   Original Research Article

Pages 1602-1605
Lu-Chang Chen, Shang-Fu Chen, Meng-Chyi Wu

 
 23. Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level   Original Research Article

Pages 1606-1612
A. Roldán, C. Reig, M.D. Cubells-Beltrán, J.B. Roldán, D. Ramírez, S. Cardoso, P.P. Freitas

 
 24. Molecular electronic device based on pH indicator by ab initio and non-equilibrium Green function methodology   Original Research Article

Pages 1613-1616
Ewerton Ramos Granhen, Denille Brito de Lima, Fabricio Macedo Souza, Antonio Carlos Ferreira Seridonio, Jordan Del Nero

 
 25. Resistance blow-up effect in micro-circuit engineering   Original Research Article

Pages 1617-1624
Michael L.P. Tan, Tanuj Saxena, Vijay K. Arora

 
 26. Magnetoconcentration effect of a bipolar magnetotransistor formed in a diffusion well   Original Research Article

Pages 1625-1631
R.D. Tikhonov

 
 27. Low-temperature characteristics of a-Si:H thin-film transistor under mechanical strain   Original Research Article

Pages 1632-1636
S.W. Tsao, T.C. Chang, P.C. Yang, M.C. Wang, S.C. Chen, J. Lu, T.S. Chang, W.C. Kuo, W.C. Wu, Y. Shi

 
 28. Voltage-controlled multiple-valued logic design using negative differential resistance devices   Original Research Article

Pages 1637-1640
Kwang-Jow Gan, Cher-Shiung Tsai, Yan-Wun Chen, Wen-Kuan Yeh

 
 29. Multiple-finger turn-on uniformity in silicon-controlled rectifiers   Original Research Article

Pages 1641-1643
You Li, Juin J. Liou

 
 30. Investigation of impact of shallow trench isolation on SONOS type memory cells   Original Research Article

Pages 1644-1649
Yue Xu, Feng Yan, DunJun Chen, Yi Shi, ZhiGuo Li, Fan Yang, Joshua Wang, YongGang Wang, Peter Lin, Jianguang Chang, Champion Yi

 
 31. The surface energy-dictated initial growth of a pentacene film on a polymeric adhesion layer for field-effect transistors   Original Research Article

Pages 1650-1656
Jaehoon Park, Jin-Hyuk Bae, Won-Ho Kim, Sin-Doo Lee, Jin Seog Gwag, Dong Wook Kim, Jeong Cheol Noh, Jong Sun Choi

 
 32. Modifying electronic properties at the silicon–molecule interface using atomic tethers   Original Research Article

Pages 1657-1664
Christina A. Hacker

 
 33. Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs   Original Research Article

Pages 1665-1668
W.C. Kao, A. Ali, E. Hwang, S. Mookerjea, S. Datta

 
 34. On the accuracy of current TCAD hot carrier injection models in nanoscale devices   Original Research Article

Pages 1669-1674
Alban Zaka, Quentin Rafhay, Matteo Iellina, Pierpaolo Palestri, Raphaël Clerc, Denis Rideau, Davide Garetto, Erwan Dornel, Julien Singer, Georges Pananakakis, Clément Tavernier, Hervé Jaouen

 
 35. Robust memory cell cylinder capacitor with cross double patterning technology   Original Research Article

Pages 1675-1679
Seong-Goo Kim, Cheon Bae Kim

 
 36. An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET’s with experimental demonstration   Original Research Article

Pages 1680-1685
Jaehoon Park, Ayse M. Ozbek, Lei Ma, Matthew T. Veety, Michael P. Morgensen, Douglas W. Barlage, Virginia D. Wheeler, Mark A.L. Johnson

 
 37. Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure   Original Research Article

Pages 1686-1689
M.H. Juang, Y.S. Peng, J.L. Wang, D.C. Shye, C.C. Hwang, S.L. Jang

 
  Short Communications
 38. Diamond MOSFET: An innovative layout to improve performance of ICs   

Pages 1690-1696
Salvador Pinillos Gimenez

 
 39. Theoretical and experimental investigation into environment dependence and electric properties for volatile memory based on methyl-red dye thin film   

Pages 1697-1700
Marcos A.L. Reis, Tamires C.S. Ribeiro, Carlos E. Cava, Lucimara S. Roman, Jordan Del Nero

 


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