ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 7, 2010

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 54, Issue 7,  Pages 675-740 (July 2010)

1.

Editorial Board Page IFC

Regular Papers

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Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric Pages 675-679 C.X. Li, C.H. Leung, P.T. Lai, J.P. Xu

3.

On the piezoelectric coupling constant of epitaxial Mg-doped GaN Pages 680-684 X. Xu, R.C. Woods

4.

High voltage REBULF LDMOS with N+ buried layer Pages 685-688 Baoxing Duan, Yintang Yang, Bo Zhang

5.

Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Pages 689-695 K. Sarpatwari, N.S. Dellas, O.O. Awadelkarim, S.E. Mohney

6.

Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design Pages 696-700 Anwar Jarndal, Pouya Aflaki, Louay Degachi, Ahmed Birafane, Ammar Kouki, Renato Negra, Fadhel M. Ghannouchi

7.

Ni–Au contacts to p-type GaN – Structure and properties Pages 701-709 Julita Smalc-Koziorowska, Szymon Grzanka, Elżbieta Litwin-Staszewska, Ryszard Piotrzkowski, Grzegorz Nowak, Michał Leszczynski, Piotr Perlin, Ewa Talik, Jan Kozubowski, Stanisław Krukowski

8.

Effects of thermal annealing on structure, morphology and electrical properties of F16CuPc/α6T heterojunction thin films Pages 710-714 Rongbin Ye, Mamoru Baba, Koji Ohta, Kazunori Suzuki

9.

Interface and electrical properties of La-silicate for direct contact of high-k with silicon Pages 715-719 K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

10.

Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric Pages 720-723 K. Kakushima, T. Koyanagi, K. Tachi, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

11.

Formation of 30-V power DMOSFET’s by implementing p-counter-doped region within n-type drift layer Pages 724-727 Miin-Horng Juang, C.C. Hwang, D.C. Shye, J.L. Wang, S.L. Jang

12.

The direct evidence of substrate potential propagation in a gate-grounded NMOS Pages 728-731 Dao-Hong Yang, Jone F. Chen, Kuo-Ming Wu, J.R. Shih, Jian-Hsing Lee

13.

Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO Pages 732-735 Y.F. Lu, Z.Z. Ye, Y.J. Zeng, L.P. Zhu, J.Y. Huang, B.H. Zhao

Short Communication

14.

Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350 °C Pages 736-740 Adetayo V. Adedeji, Ayayi C. Ahyi, John R. Williams, Suzanne E. Mohney, James D. Schofield

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