| 2. | Editorial Page 675 Peter Ashburn, Stephen Hall | | | 6. | Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application Pages 701-705 Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O’uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara | | | 8. | A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology Pages 712-716 Hiroki Okamoto, Nobuaki Yasutake, Naoki Kusunoki, Kanna Adachi, Hiroshi Itokawa, Kiyotaka Miyano, Tatsuya Ishida, Akira Hokazono, Shigeru Kawanaka, Ichiro Mizushima, Atsushi Azuma, Yoshiaki Toyoshima | | | 9. | Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster Pages 717-722 T. Ishigaki, R. Tsuchiya, Y. Morita, H. Yoshimoto, N. Sugii, T. Iwamatsu, H. Oda, Y. Inoue, T. Ohtou, T. Hiramoto, S. Kimura | | | 10. | High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate Pages 723-729 K. Romanjek, L. Hutin, C. Le Royer, A. Pouydebasque, M.-A. Jaud, C. Tabone, E. Augendre, L. Sanchez, J.-M. Hartmann, H. Grampeix, V. Mazzocchi, S. Soliveres, R. Truche, L. Clavelier, P. Scheiblin, X. Garros, G. Reimbold, M. Vinet, F. Boulanger, S. Deleonibus | | | 11. | FDSOI devices with thin BOX and ground plane integration for 32 nm node and below Pages 730-734 C. Fenouillet-Beranger, S. Denorme, P. Perreau, C. Buj, O. Faynot, F. Andrieu, L. Tosti, S. Barnola, T. Salvetat, X. Garros, M. Cassé, F. Allain, N. Loubet, L. Pham-Nguyen, E. Deloffre, M. Gros-Jean, R. Beneyton, C. Laviron, M. Marin, C. Leyris, S. Haendler, F. Leverd, P. Gouraud, P. Scheiblin, L. Clement, R. Pantel, S. Deleonibus, T. Skotnicki | | | 12. | Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution Pages 735-740 G. Bidal, N. Loubet, C. Fenouillet-Beranger, S. Denorme, P. Perreau, D. Fleury, L. Clement, C. Laviron, F. Leverd, P. Gouraud, S. Barnola, R. Beneyton, A. Torres, C. Duluard, J.D. Chapon, B. Orlando, T. Salvetat, M. Grosjean, E. Deloffre, R. Pantel, D. Dutartre, S. Monfray, G. Ghibaudo, F. Boeuf, T. Skotnicki | | | 14. | Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET) Pages 746-752 C. Dupré, T. Ernst, E. Bernard, B. Guillaumot, N. Vulliet, P. Coronel, T. Skotnicki, S. Cristoloveanu, G. Ghibaudo, O. Faynot, S. Deleonibus | | | 16. | Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering Pages 760-766 I. Ferain, R. Duffy, N. Collaert, M.J.H. van Dal, B.J. Pawlak, B. O’Sullivan, L. Witters, R. Rooyackers, T. Conard, M. Popovici, S. van Elshocht, M. Kaiser, R.G.R. Weemaes, J. Swerts, M. Jurczak, R.J.P. Lander, K. De Meyer | | | 20. | Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories Pages 786-791 M. Bocquet, G. Molas, L. Perniola, X. Garros, J. Buckley, M. Gély, J.P. Colonna, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, S. Deleonibus, G. Ghibaudo, G. Pananakakis, B. De Salvo | | | 22. | Demonstration of a wireless driven MEMS pond skater that uses EWOD technology Pages 798-802 Y. Mita, Y. Li, M. Kubota, S. Morishita, W. Parkes, L.I. Haworth, B.W. Flynn, J.G. Terry, T.-B. Tang, A.D. Ruthven, S. Smith, A.J. Walton | | |