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jueves, 30 de junio de 2011

APL and JAP - Most Highly Cited Journals in Applied Physics

AIP: Applied Physics Letters & Journal of Applied Physics

APL and JAP retain the top spots as the most highly cited journals in Applied Physics!

Thanks for your contributions

Seal - Indexed in Thomas Reuters - Journal Impact Factor Journal metrics just released by Thomson Reuters* once again show Applied Physics Letters (APL) and Journal of Applied Physics (JAP) to be the two most highly cited journals in the Applied Physics category. The latest data again ranks them as the first and second most highly cited of the 116 journals tracked in the category. This is only possible through your efforts as authors and reviewers and we are grateful for your time and energy to make APL and JAP such valued resources year after year.

*2010 Journal Citation Reports® (Thomson Reuters, 2011)

Highlights of the data include:

Applied Physics Letters

Journal of Applied Physics

Applied Physics Letters cover
  • #1 in citations with 197,445
  • Impact Factor: 3.820
  • 5-year Impact Factor: 3.845
  • Immediacy Index: 0.664
  • Eigenfactor score: 0.72217
Journal of Applied Physics cover
  • #2 in citations with 119,644
  • Impact Factor: 2.064
  • 5-year Impact Factor: 2.201
  • Immediacy Index: 0.363
  • Eigenfactor score: 0.32798

APL Research Highlights

Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals
V. Mikhelashvili, B. Meyler, S. Yofis, Y. Shneider, A. Zeidler, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, and G. Eisenstein

The authors demonstrate a low voltage nonvolatile memory field effect transistor comprising thermal SiO2 tunneling and HfO2 blocking layers as the gate dielectric stack and Au nanocrystals as charge storage nodes.

Appl. Phys. Lett. 98, 212902 (2011)

Tuning laser-induced band gaps in graphene
Hernán L. Calvo, Horacio M. Pastawski, Stephan Roche, and Luis E. F. Foa Torres

The authors show that it is possible to use a laser field in the mid-infrared range to tune the electronic structure of graphene and its electrical response. The modifications are predicted to arise both around the Dirac point and at ±Ω/2. Moreover, since the results are strongly dependent on the laser polarization, the authors suggest that it may be used as a control parameter.

Appl. Phys. Lett. 98, 232103 (2011)

JAP Research Highlights

Electron-impact excitation cross sections into Ne(2p53p) levels for plasma applications
R. O. Jung, Garrett A. Piech, M. L. Keeler, John B. Boffard, L. W. Anderson, and Chun C. Lin

One requirement for plasma spectroscopy analysis and modeling of neon discharges is a set of electron-impact excitation cross sections covering excitation from both the2p6 ground state and from the four 2p53s levels. The authors present experimental measurements for excitation cross sections into four J = 1 levels of the 2p53p configuration from the J = 0 and J = 2 2p53s metastable levels.

J. Appl. Phys. 109, 123303 (2011)

Synthesis of higher diamondoids by pulsed laser ablation plasmas in supercritical CO2
Sho Nakahara, Sven Stauss, Toru Kato, Takehiko Sasaki, and Kazuo Terashima

Diamondoids are hydrogen-terminated molecules whose structure consists of C(sp3)-C(sp3) bonds. They can be described as diamond molecules because they can be superimposed on a diamond lattice. In this report, the authors propose laser ablation in supercritical CO2 as a practical method for synthesizing diamondoids.

J. Appl. Phys. 109, 123304 (2011)

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