ScienceDirect Alert: Solid-State Electronics, Vol. 61, Iss. 1, 2011

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Solid-State Electronics Volume 61, Issue 1,  Pages 1-120 (July 2011) Modify or Remove My Alerts

1.

Editorial Board    Page IFC

Review

2.

Thermal effects in AlGaN/GaN/Si high electron mobility transistors   Review Article Pages 1-6 I. Saidi, Y. Cordier, M. Chmielowska, H. Mejri, H. Maaref Highlights ► Direct-current measurements have been performed at 300 K for AlGaN/GaN/Si HEMT. ► Using a numerical method, we deduced the temperature rise in the conductive 2DEG. ► The temperature rise does not exceed 20 K. ► The temperature decreases with the drain–source spacing increase.

Regular Papers

3.

3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs   Original Research Article Pages 7-12 J.K. David, L.F. Register, S.K. Banerjee Research highlights ► 3D Semiclassical Monte Carlo simulation of III–V and Si tri-gate nanowire FETs. ► Schrodinger correction with Poisson solver and non-parabolic band approximation. ► Carrier velocity as opposed to quantum/dos capacitances vary Ids between materials. ► InAs and InSb show superior performance.

4.

On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility transistor (PHEMT)   Original Research Article Pages 13-17 Chien-Chang Huang, Huey-Ing Chen, Shiou-Ying Cheng, Li-Yang Chen, Tsung-Han Tsai, Yi-Chun Liu, Tai-You Chen, Chi-Hsiang Hsu, Wen-Chau Liu Highlights ► We use the EP and TE approaches to form the metal gates. ► Comparison and study on the DC and RF performance with different approaches. ► The EP approach could effectively improve the Schottky interface. ► The temperature-dependent characteristics with EP and TE approaches are demonstrated.

5.

Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation   Original Research Article Pages 18-22 Yijian Ouyang, Jing Guo Highlights ► Performance assessment of ballistic CNT array FETs with process variations. ► Ten times and 15% larger off- and on-current for 0.24 nm diameter variation. ► Residual metallic tubes significantly increase off-current. ► Misalignment decreases on- and off-current. ► Six nanometer CNT spacing required for 2200 μA/μm on-current.

6.

Characterization of laser carved micro channel polycrystalline silicon solar cell   Original Research Article Pages 23-28 Hsin-Chien Chen, Liann-Be Chang, Ming-Jer Jeng, Chao-Sung Lai Highlights ► The efficiency of silicon solar cells was increased carving micro channel structures. ► Cell’s efficiency was increased 0.23–1.50% as the structure radius varied 15–35 μm. ► Efficiency started to decrease when the structure radius was greater than 40 μm. ► Micro channels also improved the Fill Factor of polycrystalline silicon solar cells.

7.

Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs   Original Research Article Pages 29-32 A. Bengi, S.J. Jang, C.I. Yeo, T. Mammadov, S. Özçelik, Y.T. Lee Research highlights ► InP/InGaAs laser diodes are potential candidates for fiber optic communication systems. ► Conventional ohmic contacts have been extensively used due to lower Schottky barrier height. ► To improve LD performance, one of the most important parameters is series resistance of the device. ► Recently, disilicides of rare earth metals have come into prominence. ► They have lower Schottky barrier height, specific contact resistivity and alloying temperature.

8.

The effects of active layer thickness on Programmable Metallization Cell based on Ag–Ge–S   Original Research Article Pages 33-37 F. Wang, W.P. Dunn, M. Jain, C. De Leo, N. Vickers Research highlights ► PMC devices based on Ag–Ge–S were fabricated with three thicknesses. ► The ‘ON’ resistance of PMC decreases as the active layer thickness increases. ► The SET voltage also decreases slightly as increase of the active layer thickness. ► The RESET voltage increases as increase of the active layer thickness.

9.

A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis   Original Research Article Pages 38-45 Siamak Salimy, Antoine Goullet, Ahmed Rhallabi, Fatiha Challali, Serge Toutain, Jean Claude Saubat Highlights ► In this study, a compact scalable model of CMOS spiral inductors is proposed. ► The model parameters equations are expressed using simple analytical expressions. ► On chip CMOS spiral frequency dependent characteristics are modeled. ► Substrate coupling, skin and proximity effects are considered in the model. ► The model is suitable for RFIC designers and is easy to implement in design kits.

10.

On the electrical degradation and green band formation in α- and β-phase poly(9,9-dioctyfluorene) polymer light-emitting diodes   Original Research Article Pages 46-52 B. Arredondo, B. Romero, A. Gutiérrez-Llorente, A.I. Martínez, A.L. Álvarez, X. Quintana, J.M. Otón Highlights ► We report a comparison of degradation between α- and β-phase PFO based diodes. ► Green emission associated to fluorenone is more likely to occur in α-phase PFO. ► Analysis of I–V curves leads to hole mobilities higher for β-PFO than α-PFO diodes. ► Degraded samples show a hole mobility reduction and an increase in the DOS width.

11.

GaAs HEMT as sensitive strain gauge   Original Research Article Pages 53-57 Jun Liu, Tingting Hou, Chenyang Xue, Zhenxin Tan, Guowen Liu, Binzhen Zhang, Wendong Zhang Research highlights ► The GaAs HEMT as the sensitive element of micro-sensors to detect the deformation. ► The maximum gauge factor of HEMT is much larger than that of piezoresistive silicon. ► The high gauge factor is due to voltage bias and piezoresistive piezoelectric effect.

12.

SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time   Original Research Article Pages 58-64 E. Ramirez-Garcia, M. Michaillat, F. Aniel, N. Zerounian, M. Enciso-Aguilar, D. Rideau Highlights ► An original method to perform transit time analysis in SiGe HBT is described. ► It relies on analytical models of carrier mobilities and of energy relaxation time. ► These models are fitted from full-band Monte Carlo simulations of SiGe:C system. ► These models are implemented in a hydrodynamic solver. ► Modeling results show good agreement with measurements.

13.

Improve on/off ratio of organic heterojunction transistors by adopting single-sandwich configuration   Original Research Article Pages 65-68 Jianwu Shi, Hua Wang, Haibo Wang, Hongkun Tian, Yanhou Geng, Donghang Yan Research highlights ► NaT4/F16CuPc OHJTs with single-sandwich configuration were fabricated. ► The well-type shield effect of the electrodes was utilized in the process. ► The devices present high on/off ratio of 1 × 105.

14.

DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region   Original Research Article Pages 69-75 Yang-Hua Chang, Zong-Tai Cheng Research highlights ► This paper presents the DC parameter extraction in an InP–InGaAsSb double HBT. ► Non-ideal collector current is modeled by a non-ideal base doping distribution. ► Several consequent non-ideal effects are studied using Medici device simulator. ► The associated DC parameters of VBIC model are extracted accordingly.

15.

Effect of rapid thermal annealing on pentacene-based thin-film transistors   Original Research Article Pages 76-80 D.W. Chou, C.J. Huang, C.M. Su, C.F. Yang, W.R. Chen, T.H. Meen Research highlights ► The bottom contact pentacene-based thin-film transistor is treated by rapid thermal annealing. ► The pentacene molecular ordering was significantly improved though the grain size only slightly increased after the annealing temperature increases to 60 °C. ► The RTA treatment causes grain growth along the c axis and the elimination of defects and misoriented crystallites in the pentacene layer. ► The device annealed at temperature of 120 °C for 2 min exhibits properly electrical characteristics.

16.

Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs   Original Research Article Pages 81-86 Shuzhen You, Stefaan Decoutere, Arturo Sibaja-Hernandez, Rafael Venegas, Stefaan Van Huylenbroeck, Kristin De Meyer Research highlights ► A SiGe spike in the monoemitter is used to increase Ib, hence improve BVCEO. ► We modeled the Auger and SRH recombination rate accounting for the increased Ib. ► In a sharp spike, from low to medium bias condition, SRH recombination dominates. ► In a sharp spike at high bias and in a diffused spike, Auger recombination dominates. ► A sharp spike results in the reduced effective minority carrier lifetime in the spike.

17.

Digital signal propagation delay in a nano-circuit containing reactive and resistive elements   Original Research Article Pages 87-92 Vijay K. Arora, Desmond C.Y. Chek, Abdul Manaf Hashim Highlights ► Micro/nano-scale circuit containing resistive and reactive elements. ► Velocity and current saturation. ► Failure of Ohm’s law. ► Enhancement in RC time constant. ► Reduction in L/R time constant.

18.

Analytic expression for the Fowler–Nordheim V–I characteristic including the series resistance effect   Original Research Article Pages 93-95 E. Miranda, F. Palumbo Highlights ► We propose an expression for the Fowler-Nordheim tunneling characteristic with series resistance. ► The proposed expression involves the Lambert W function. ► Computation is performed using a Padé-type approximation for W.

19.

Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation   Original Research Article Pages 96-99 Sheng-Yao Huang, Ting-Chang Chang, Min-Chen Chen, Shu-Wei Tsao, Shih-Ching Chen, Chih-Tsung Tsai, Hung-Ping Lo Research highlights ► We study the effect of ammonia incorporation on a-IGZO TFTs. ► The electrical characteristics of the TFTs are improved greatly by incorporating NH3. ► The improvement can be attributed to both hydrogen and nitrogen passivation effects. ► The traps at IGZO film were passivated by forming O–H and Zn–N bonds.

20.

Improved characteristics for Pd nanocrystal memory with stacked HfAlO–SiO2 tunnel layer   Original Research Article Pages 100-105 Tsung-Kuei Kang, Han-Wen Liu, Fang-Hsing Wang, Cheng-Li Lin, Ta-Chuan Liao, Wen-Fa Wu Research highlights ► The thermally induced traps in tunnel oxide can worsen the memory characteristics. ► The thickness ratio of HfAlO to SiO2 can affect a memory characteristic. ► N2 plasma treatment can further improve the memory characteristics.

21.

Origin of low-frequency noise in pentacene field-effect transistors   Original Research Article Pages 106-110 Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, Jan Chroboczek, Francis Balestra, Gerard Ghibaudo Research highlights ► The low-frequency noise in pentacene OFETs exhibits 1/f type spectrum. ► Carrier number fluctuations model well accounts for the 1/f noise. ► Higher trap density is obtained in BC devices than in TC ones. ► Contact noise dominates the overall noise at strong current intensities.

22.

Design and optimization of high voltage LDMOS transistors on 0.18 μm SOI CMOS technology   Original Research Article Pages 111-115 G. Toulon, I. Cortés, F. Morancho, E. Hugonnard-Bruyère, B. Villard, W.J. Toren Highlights ► Power MOS transistors manufactured on a 0.18 μm SOI CMOS technology are compared by means of TCAD numerical simulations. ► The measured breakdown voltage results as a function of the handle wafer voltage are compared with TCAD numerical simulation. ► The simulations are used to explain the problems arising in the measured structures. ► Some important design parameters have a strong influence on the voltage capability. ► Some solutions are proposed in this work to improve the performances of the fabricated LDMOS structures.

23.

Current–voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination   Original Research Article Pages 116-120 Chia-Lung Tsai, Cheng-Lung Tsai, Guan-Ru He, Ting-Hong Su, Chang-Feng You, Yow-Jon Lin Highlights ► I-V characteristics of the AlCdO/unpolished (polished) p-type Si diodes were examined. ► The higher barrier height of the AlCdO/p-type Si diode was found. ► The lower series resistance of the AlCdO/p-type Si diode was found. ► The surface roughness plays an essential role in improving the device performance.

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