ScienceDirect Alert: Solid-State Electronics, Vol. 57, Iss. 1, 2011

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Solid-State Electronics Volume 57, Issue 1,  Pages 1-92 (March 2011) Modify or Remove My Alerts

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Editorial Board    Page IFC

Regular Papers

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Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content   Original Research Article Pages 1-8 Kıvanç Sel, Barış Akaoğlu, İsmail Atilgan, Bayram Katircioğlu Research highlights ► a-SiCx:H films were grown by RF PECVD to be the samples with different DOS. ► Apparent activation energies lower than expected were obtained by Arrhenius plot. ► Localized tail states were numerically determined without any asymptotic approach. ► Nearest neighbor hopping conduction at tail states were numerically simulated. ► Fitting to measured conductivities increased activation energies with C content.

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Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress   Original Research Article Pages 9-13 Xianjie Shao, Dawei Yan, Hai Lu, Dunjun Chen, Rong Zhang, Youdou Zheng Research highlights ► Efficiency droop of GaN LEDs was studied under reverse-current and high-temperature stress. ► Reverse-current stress could cause an up-shift of peak-efficiency-current of the LEDs. ► High-temperature stress has no impact on the efficiency roll-off point. ► The observations can be explained by a rate-equation model.

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Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance   Original Research Article Pages 14-18 Athikom Manoi, James W. Pomeroy, Richard Lossy, Reza Pazirandeh, Joachim Würfl, Michael J. Uren, Trevor Martin, Martin Kuball Research highlights ► Transient thermal crosstalk measured in pulse-operated multifinger AlGaN/GaN HEMTs. ► Inter-finger heat diffusion was found to be negligible within the first 500 ns of electrical pulses. ► At 3 μs after turn-on, thermal crosstalk significantly affects devices with gate pitch <40 μm. ► Gate pitch should be optimised to minimize transient thermal cross-talk.

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Microwave absorption properties of gold nanoparticle doped polymers   Original Research Article Pages 19-22 C. Jiang, L. Ouattara, C. Ingrosso, M.L. Curri, V. Krozer, A. Boisen, M.H. Jakobsen, T.K. Johansen Research highlights ► Gold nanoparticles doped polymer shows the ability of absorbing microwave energy. ► On-wafer measurement method is capable of characterizing small amount of samples. ► Higher density of gold nanoparticles results in higher energy absorption rate. ► The absorption mechanism is explained by microwave theories.

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A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FET   Original Research Article Pages 23-30 Chen Shen, Li-Tao Yang, Ganesh Samudra, Yee-Chia Yeo Research highlights ► Caclulate band-to-band tunneling current in 2D device structures. ► Proposed algorithm based on multi-dimension extension of WKB approximation. ► Physical and robust simulation of tunneling FET is achieved with the new algorithm.

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Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs   Original Research Article Pages 31-34 A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, N. Collaert, G. Pananakakis

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Efficient fluorescent white organic light-emitting devices based on a ultrathin 5,6,11,12-tetraphenylnaphthacene layer   Original Research Article Pages 35-38 Qin Xue, Shiming Zhang, Guohua Xie, Zhensong Zhang, Li Zhao, Yang Luo, Ping Chen, Yi Zhao, Shiyong Liu Research highlights ► We for the first time combine ultrathin layer rubrene with the DSA-ph doped MADN layer in the device to obtain white light. ► We obtained all-fluorescent WOLED, which has comparatively high EL efficiency. ► We did deep research into the light-emitting mechanism of the device, and the reason for CIE change with increasing driving voltages.

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Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate   Original Research Article Pages 39-42 Feng Xie, Hai Lu, Xiangqian Xiu, Dunjun Chen, Ping Han, Rong Zhang, Youdou Zheng Research highlights ► MSM UV photodetectors are fabricated on low-defect-density homoepitaxial GaN layer. ► The photodetector exhibits ultra-low dark current and high UV/visible rejection ratio. ► The internal gain is attributed to hole trapping at interface and image-force lowering effect.

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Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET   Original Research Article Pages 43-51 Adelmo Ortiz-Conde, Francisco J. García-Sánchez Research highlights ► Single completely generic equation of channel potential for undoped asymmetric independently driven double-gate MOSFETs. ► Channel potential equation is based on complex variables and is valid for all values of front and back-gate bias. ► The unified nature of the proposed equation provides a better basis for global physical insight. ► Several examples, including the all important fully symmetric case, are analyzed.

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Compact modeling of CMOS transistors under variable uniaxial stress   Original Research Article Pages 52-60 Nicoleta Wacker, Harald Richter, Mahadi-Ul Hassan, Horst Rempp, Joachim N. Burghartz Research highlights ► We propose a method to simulate the effect of uniaxial stress on MOSFETs. ► The method is valid for any drain current and stress directions in (001) Si plane. ► It can perform static and dynamic simulations, in linear and saturation regions. ► It is simulator-independent and does not depend on the source of uniaxial stress. ► It is adaptable to other bulk CMOS nodes and to other technologies such as SOI.

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A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation   Original Research Article Pages 61-66 F. Lime, R. Ritzenthaler, M. Ricoma, F. Martinez, F. Pascal, E. Miranda, O. Faynot, B. Iñiguez Research highlights ► Valid for long-channel undoped ADGMOSFETS with independent gate operation. ► Fully analytical and explicit derivation with no iterative solutions. ► Accessible front and back gate charges, potentials and currents. ► Unification of symmetric and asymmetric cases. ► Physical solutions similar to classical MOS theory.

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In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation   Original Research Article Pages 67-72 B. Grandchamp, M.-A. Jaud, P. Scheiblin, K. Romanjek, L. Hutin, C. Le Royer, M. Vinet Research highlights ► We performed 2D simulations of germanium-on-insulator fully-depleted pMOSFET. ► Interface traps, mobility and leakage were calibrated versus experimental data. ► The prediction of electrical characteristics is accurate for several gate lengths. ► These simulations help in finding guidelines for improving the on-state current.

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n+-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal   Original Research Article Pages 73-75 M.C. Wang, T.C. Chang, S.W. Tsao, Y.Z. Chen, S.C. Tseng, T.C. Hsu, D.J. Jan, C.F. Ai, J.R. Chen Research highlights ► The feasibility of n+-doped-layer free a-Si:H TFSC has been investigated. ► The ohmic-contact characteristic has been achieved by using the CuMg alloy. ► The proposed structure showed the typical solar cell I–V characteristic. ► The CuMg alloy was suitable for the replacement of n+-doped-layer.

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The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices   Original Research Article Pages 76-79 Xingguang Zhu, Ayayi C. Ahyi, Mingyu Li, Zengjun Chen, John Rozen, Leonard C. Feldman, John R. Williams Research highlights ► Use a nitrogen plasma to successfully introduce nitrogen into SiO2/SiC interface. ► N Conc. at the interface is 1 × 1014 cm−2, ∼1/6 of the saturated N Conc. by NO anneal. ► This process reduces DIT and results in peak channel mobility at about 50 cm2/V s.

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Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor   Original Research Article Pages 80-82 Kuan-Wei Lee, Hsien-Cheng Lin, Cheng-Chieh Wu, Fang-Ming Lee, Yeong-Her Wang Research highlights ► This paper exhibits the possibility of the E-mode InGaP/InGaAs MOS-PHEMT with LPO. ► With the help of the LPO, the threshold voltage can be shifted positively. ► The results also show a lower leakage current and an improved subthreshold swing. ► The LPO does not degrade the device on-off performance.

Short Communications

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Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces    Pages 83-86 G. Hamaide, F. Allibert, F. Andrieu, K. Romanjek, S. Cristoloveanu Research highlights ► Biasing the back interface in accumulation while extracting carrier mobility in FD-SOI MOSFETs leads to underestimated values. ► Apparent mobility degradation with decreasing film thickness in ultra-thin SOI MOSFET or Pseudo-MOSFET measurement is due to an additional component of the vertical electric field. ► In Pseudo-MOSFET measurements, the additional component of the vertical electric field comes from the traps and charges at the free-surface of the sample. ► We propose a new model to take this additional component of the vertical electric field into account.

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Dependence of off-leakage current on channel film quality in poly-Si thin-film transistors and analysis using device simulation    Pages 87-89 Mutsumi Kimura, Charalambos Dimitriadis Graphical abstract Research highlights ► Dependence of off-leakage on channel film quality is analyzed by device simulation. ► Off-leakage decreases as the intragrain trap density decreases for the low Vgs. ► This is because the Phonon-assisted tunneling with Poole-Frenkel effect is dominant. ► Off-leakage slightly increases as the trap density decreases for the high Vgs. ► This is because the band-to-band tunneling is dominant.

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Tuning the spectrometric properties of white light by surface plasmon effect using Ag nanoparticles in a colour converting light-emitting diode    Pages 90-92 S. Chandramohan, Beo Deul Ryu, P. Uthirakumar, Ji Hye Kang, Hyun Kyu Kim, Hyung Gu Kim, Chang-Hee Hong Research highlights ► A novel energy-transfer scheme for tuning the white-light properties is proposed. ► Silver nanoparticles are mixed with QDs for generating surface plasmon effect. ► Warm white-light emissions with tunable properties have been realized. ► External quantum efficiency is improved due to LSP effect.

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