ScienceDirect Alert: Solid-State Electronics, Vol. 56, Iss. 1, 2011

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 56, Issue 1,  Pages 1-222 (February 2011) Modify or Remove My Alerts

1.

Editorial Board    Page IFC

Review

2.

Traps centers impact on Silicon nanocrystal memories given by Random Telegraph Signal and low frequency noise   Review Article Pages 1-7 M. Trabelsi, L. Militaru, N. Sghaier, A. Souifi, N. Yacoubi Research highlights ► RTS analysis allows the determination of single trap energy level and localization. ► For 0.8 nm gate oxide thick, transport is governed by nc-Si and interface traps. ► RTS noise is the basic feature responsible for l/fγ noise in large area devices.

Regular Papers

3.

Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure   Original Research Article Pages 8-12 Li-Chuan Chang, Cheng-Huang Kuo, Chi-Wen Kuo

4.

Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device   Original Research Article Pages 13-17 Daolin Cai, Zhitang Song, Houpeng Chen, Xiaogang Chen Research highlights ► Temperature model is constituted by an active region and a dispersed-heat region. ► Calculated and simulated the radius and crystalline fraction. ► Crystalline fraction and temperature increase with the reset voltage increasing.

5.

Microwave noise modeling of FinFETs   Original Research Article Pages 18-22 Giovanni Crupi, Alina Caddemi, Dominique M.M.-P. Schreurs, Wojciech Wiatr, Abdelkarim Mercha

6.

Comprehensive numerical simulation of threshold-voltage transients in nitride memories   Original Research Article Pages 23-30 Aurelio Mauri, Salvatore M. Amoroso, Christian Monzio Compagnoni, Alessandro Maconi, Alessandro S. Spinelli Research highlights ► We present a complete model to describe charge trap devices behavior. ► In this study any mathematical aspect regarding holes and electrons is detailed modeled. ► Experimental data coming from different TANOS and SONOS devices are correctly reproduced.

7.

Investigation of GaN-based light-emitting diodes using double photonic crystal patterns   Original Research Article Pages 31-34 H.W. Huang, Fang-I Lai, S.Y. Kuo, J.K. Huang, K.Y. Lee

8.

On relationship between the field at an autoemitter top, anode voltage and cathode geometry   Original Research Article Pages 35-39 B.V. Stetsenko, A.I. Shchurenko Research highlights ► At a cathode size lowring an emission current become less of Fowler-Nordheim it. ► A field emission is appear when a voltage along cathode is large work function. ► Under the action of contact potetial a nanocathode field emission are observed.

9.

A unified short-channel compact model for cylindrical surrounding-gate MOSFET   Original Research Article Pages 40-46 Bastien Cousin, Marina Reyboz, Olivier Rozeau, Marie-Anne Jaud, Thomas Ernst, Jalal Jomaah Research highlights ► A compact model of short-channel effects for GAA MOSFET has been developed. ► The model uses a well-known extraction method making the model simple and accurate. ► Each term is used in a model core in order to provide a short-channel correction. ► The compact model is well described and is suitable with circuit design tools. ► The model is validated using TCAD simulations for all gate lengths down to 10nm.

10.

Optimization of SiGe bandgap-based circuits for up to 300 °C operation   Original Research Article Pages 47-55 D.B. Thomas, L. Najafizadeh, J.D. Cressler, K.A. Moen, N. Lourenco Research Highlights ► Devices in commercial bulk SiGe BiCMOS platform characterized to demonstrate acceptable performance up to 300 °C. ► Proven SiGe BGR circuit designed for wide temperature operation verified to work up to 300 °C. ► High temperature device and circuit level compensation techniques shown to significantly improve SiGe BGR performance from −225 °C to 300 °C. ► Non-optimized SiGe temperature sensor circuit shown to compare favorably with commercially available temp sensors up to 225 °C.

11.

Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors   Original Research Article Pages 56-59 Martin Kocan, Felix Recht, Gilberto A. Umana-Membreno, Matt R. Kilburn, Brett D. Nener, Umesh K. Mishra, Giacinta Parish

12.

Physical limitations of the diffusive approximation in semiconductor device modeling   Original Research Article Pages 60-67 Tigran T. Mnatsakanov, Alexey G. Tandoev, Michael E. Levinshtein, Sergey N. Yurkov Research highlights ► New criteria for occurrence of the diffusion mode were formulated. ► The applicability limits of the diffusion approximation in simulation were found. ► The analytical results are confirmed by a numerical experiment.

13.

Effects of 72Ge/74Ge preamorphization combined with sub-keV boron implantation in pMOSFET fabrication   Original Research Article Pages 68-72 Lu-Chang Chen, Shang-Fu Chen, Meng-Chyi Wu Research highlights ► We demonstrate the thickness by controlling a high 72Ge/74Ge ratio, the device performance can be enhanced. ► The optimum conditions of Ge PAI would help the confinement of boron ions to avoid the channel effect. ► a low 72Ge/74Ge ratio would cause the degradation of Vth roll-off and Ion/Ioff ratio. ► We examine a thinner Ge amorphous layer has a weak ability to suppress the channeling tail of boron.

14.

Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates   Original Research Article Pages 73-78 Yuki Niiyama, Zhongda Li, T. Paul Chow, Jiang Li, Takehiko Nomura, Sadahiro Kato

15.

Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses   Original Research Article Pages 79-84 H.K. Lee, D.H. Lee, Y.M. Song, Y.T. Lee, J.S. Yu

16.

A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs   Original Research Article Pages 85-88 Hsien-Cheng Tseng, Jhin-Yuan Chen Research highlights ► InGaP/GaAs collector-up HBTs with a heat-dissipation packaging configuration is developed. ► The thermal handling in the device has been optimized through the variation of finger pitches. ► Structure thickness was reduced more than 35%, and the thermal resistance was improved over 40%.

17.

Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve   Original Research Article Pages 89-94 Ana Isabela Araújo Cunha, Marcelo Antonio Pavanello, Renan Doria Trevisoli, Carlos Galup-Montoro, Marcio Cherem Schneider

18.

Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors   Original Research Article Pages 95-99 Sangwon Lee, Yong Woo Jeon, Sungchul Kim, Dongsik Kong, Dae Hwan Kim, Dong Myong Kim

19.

Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes   Original Research Article Pages 100-103 Gowrish K. Rao, Kasturi V. Bangera, G.K. Shivakumar Research highlights ► We have fabricated p-ZnTe/n-CdTe heterojunction diode by vacuum deposition. ► We have determined the dominant conduction mechanisms in the heterojunction. ► Barrier height, width of the depletion region have been determined. ► A band diagram of the heterojunction has been drawn based on Anderson’s Model.

20.

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of ⟨1 1 1⟩ and ⟨1 0 0⟩ crystal orientation at high electric fields   Original Research Article Pages 104-110 Julian Becker, Eckhart Fretwurst, Robert Klanner

21.

Channel scaling of hybrid GaN MOS-HEMTs   Original Research Article Pages 111-115 Zhongda Li, T. Paul Chow Research highlights ► We studied the effect of downscaling of the MOS channel of hybrid GaN MOS-HEMT. ► Numerical simulations were used in this study. ► The improvement in on-state conduction were quantified. ► A Ron,sp of 2.1 mΩ-cm2 was projected for MOS channel of 0.38 μm. ► We also found that GaN cap layer reduced short channel effects.

22.

Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors   Original Research Article Pages 116-119 J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González, S. Perez Research highlights ► Detection and generation in the TeraHertz range. ► Dispersion of plasma oscillations in nanometric MESFETs. ► Plasmonic noise of a two dimensional electron gas. ► The role of the gate in the control of the spectrum of 2D plasma oscillations.

23.

Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations   Original Research Article Pages 120-129 Vikas Kaushal, Ignacio Iñiguez-de-la-Torre, Martin Margala Research highlights ► BDT is a novel device that is based upon an electron steering and a deflection effect. ► The BDT has a unique planar device capable to perform logic operations. ► The low gate capacitance should allow THz performance. ► BDT possesses both the positive and negative transconductance region. ► Ideal for frequency doubling at very high speeds.

24.

Electrical characteristics of nickel silicide–silicon heterojunction in suspended silicon nanowires   Original Research Article Pages 130-134 Su Heon Hong, Myung Gil Kang, Byung-Sung Kim, Duk Soo Kim, Jae Hyun Ahn, Dongmok Whang, Sang Hoon Sull, Sung Woo Hwang Research highlights ► Step-by-step silicidation of silicon nanowire. ► The penetration depth is proportional to the total annealing time. ► The current–voltage characteristics are modeled by back-to-back Schottky diodes.

25.

Dynamic model of AlGaN/GaN HFET for high voltage switching   Original Research Article Pages 135-140 Alexei Koudymov

26.

A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates   Original Research Article Pages 141-147 Md. Mahbub Satter, Ahmad Ehteshamul Islam, Dhanoop Varghese, Muhammad Ashraful Alam, Anisul Haque

27.

A surface potential based drain current model for asymmetric double gate MOSFETs   Original Research Article Pages 148-154 Pradipta Dutta, Binit Syamal, N. Mohankumar, C.K. Sarkar Research highlights ► We model a surface potential based drain current for asymmetric DG MOSFETs. ► The model is applicable for both heavily and lightly doped Silicon channel. ► The surface potential at both the gates are solved using proper Iterative techniques. ► The effect of volume inversion is shown in case of lightly doped channel.

28.

Improved performance of mixed single layer top-emission organic light emitting devices using capping layer   Original Research Article Pages 155-158 Zhaokui Wang, Shigeki Naka, Hiroyuki Okada Research highlights ► Effects of capping layer on a mixed single layer Top-emission OLED were investigated. ► 2.5 time enhancement was obtained when 45 nm TPD films used as capping layer. ► Performance enhancement was explained through measuring device properties. ► It was attributed to special mixed single layer structure with complex interference.

29.

In-cell adaptive touch technology for a flexible e-paper display   Original Research Article Pages 159-162 Jong-Kwon Lee, Sang-Soo Kim, Yong-In Park, Chang-Dong Kim, Yong-Kee Hwang Research highlights ► Development of in-cell adaptive touch technology for microcapsule-type flexible electrophoretic display for the first time. ► The use of newly designed two types of a-Si:H photo-sensor arrays with different channel W/L on a stainless steel substrate to get better touch sensitivity depending upon the environmental light intensities. ► The use of the overall capacitive sensor to get rid of the inherent issue of photo-sensor related to shadow effects. ► Development of the hybrid-touch structure consisting of the overall capacitor as a switch and the two types of photo-sensor arrays for touch position, which can reduce power consumption effectively without decreasing image quality while maintaining slim, light-weight, and compact module architecture.

30.

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique   Original Research Article Pages 163-167 Hiroshi Kambayashi, Yoshihiro Satoh, Takuya Kokawa, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato

31.

Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer   Original Research Article Pages 168-174 Ch. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, Ch. Turquat, S. Spiga

32.

Effects of residual copper selenide on CuInGaSe2 solar cells   Original Research Article Pages 175-178 Tung-Po Hsieh, Chia-Chih Chuang, Chung-Shin Wu, Jen-Chuan Chang, Jhe-Wei Guo, Wei-Chien Chen Research highlights ► The conductive Cu2-xSe becomes the shunt paths, especially for a high Cu content. ► The residual Cu2-xSe on CIGS destroys the pn junction behavior. ► The Cu-rich CIGS cells treated by KCN cannot show acceptable efficiency. ► Exhausting the residual Cu2–xSe is necessary for high-efficiency CIGS solar cells.

33.

Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications   Original Research Article Pages 179-184 M. Ullán, S. Díez, M. Lozano, G. Pellegrini, D. Knoll, B. Heinemann Research highlights ► We study advanced SiGe bipolar devices irradiated in different bias configurations. ► Less damage seen with gammas in biased devices than in shorted or floating ones. ► Annealing differences are not enough to compensate the bias damage differences. ► Floating configuration should be avoided in gamma irradiations. ► Bias effects have not been observed in neutron irradiations.

34.

Titanium and silver contacts on thermally oxidized titanium chip: Electrical and gas sensing properties   Original Research Article Pages 185-190 F. Hossein-Babaei, S. Rahbarpour Research highlights ► Ti–TiO2 contact is ohmic in all atmospheric conditions and temperatures. ► Ohmic Ag–TiO2 contact becomes highly nonlinear in oxidizing atmosphere. ► Forward biased Ag–TiO2 was experimentally analyzed to result barrier height. ► Reverse current in Ag–TiO2–Ti diode increases 105 times in reducing atmospheres.

35.

SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer   Original Research Article Pages 191-195 L.W. Qu, X.S. Miao, J.J. Sheng, Z. Li, J.J. Sun, P. An, Jiandong Huang, Daohong Yang, Chang Liu

36.

Transient electroluminescence determination of carrier mobility and charge trapping effects in heavily doped phosphorescent organic light-emitting diodes   Original Research Article Pages 196-200 Ming-Te Lin, Minghang Li, Wei-Hsuan Chen, Mohammad A. Omary, Nigel D. Shepherd

37.

AlGaN/GaN hybrid MOS-HEMT analytical mobility model   Original Research Article Pages 201-206 A. Pérez-Tomás, A. Fontserè Research highlights ► The hybrid normally-off switch AlGaN/GaN MOS-HEMT combines two main advantages: ► The MOS gate control and the high 2DEG mobility in AlGaN/GaN drift region. ► Here, we present simple analytical modeling of the on-resistance of a hybrid MOS-HEMT. ► We investigate the layout, the MOS channel mobility, the effect of a high-k and the temperature. ► The model can aid to understand the device physics and is compatible with TCAD simulation packages.

Short Communications

38.

Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation    Pages 207-210 Tomohiro Kasakawa, Hiroki Tabata, Ryo Onodera, Hiroki Kojima, Mutsumi Kimura, Hiroyuki Hara, Satoshi Inoue Graphical abstract Research highlights ► We evaluate degradation of poly-Si TFTs by comparing normal and reverse characteristics. ► Symmetrical normal and reverse characteristics indicate Joule-heating degradation. ► Asymmetrical characteristics indicate hot-carrier degradation. ► Degradation occurrence is contrasted between standard and fine TFTs. ► Behavior of the hot-carrier degradation is analyzed.

39.

A mechanism for asymmetric data writing failure    Pages 211-213 Myoung Jin Lee, Kun Woo Park

40.

Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction    Pages 214-218 J.C. Tinoco, A.G. Martinez-Lopez, J.-P. Raskin

41.

Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes    Pages 219-222 Eun-Ae Chung, Young-Pil Kim, Kab-Jin Nam, Sungsam Lee, Ji-Young Min, Yu-Gyun Shin, Siyoung Choi, Gyoyoung Jin, Joo-Tae Moon, Sangsig Kim

Send my e-mail in plain text format

Access the ScienceDirect Info site if you have questions about this message or other features of this service.

This email has been sent to you by ScienceDirect, a division of Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The Netherlands, Tel.+31 20 485 3911. ScienceDirect respects your privacy and does not disclose, rent or sell your personal information to any non-affiliated third parties without your consent, except as may be stated in the ScienceDirect online privacy policy. By using email or alert services, you agree to comply with the ScienceDirect Terms and Conditions. To unsubscribe to alert services, please go to the Alerts page. Copyright © 2011 ScienceDirect. All rights reserved. Any unauthorized use, reproduction, or transfer of this message or its contents, in any medium, is strictly prohibited. ScienceDirect® is a registered trademark of Elsevier B.V. Delivery Job ID: 11251:331429465:22257:279419908