ScienceDirect Alert: Solid-State Electronics, Vol. 55, Iss. 1, 2011

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Solid-State Electronics Volume 55, Issue 1,  Pages 1-68 (January 2011) Modify or Remove My Alerts

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Editorial Board    Page IFC

Letters

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Trap origin of field-dependent mobility of the carrier transport in organic layers    Pages 1-4 José M. Montero, Juan Bisquert

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Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances    Pages 5-7 R.J.T. Simms, M.J. Uren, T. Martin, J. Powell, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, E. Janzén, M. Kuball

Regular Papers

4.

A novel fabrication process of a gate offset nonvolatile memory on glass and the influence of the gate offset structure on the device characteristics   Original Research Article Pages 8-12 Nguyen Van Duy, Nariangadu Lakshminarayan, Sungwook Jung, Nguyen Thanh Nga, Dang Ngoc Son, Wonbaek Lee, Junsin Yi

5.

Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations   Original Research Article Pages 13-18 M. Cheralathan, A. Cerdeira, B. Iñiguez

6.

RF power performance evaluation of surface channel diamond MESFETs   Original Research Article Pages 19-24 V. Camarchia, F. Cappelluti, G. Ghione, M.C. Rossi, P. Calvani, G. Conte, B. Pasciuto, E. Limiti, D. Dominijanni, E. Giovine

7.

Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo   Original Research Article Pages 25-28 Ignacio Martin-Bragado, Nikolas Zographos

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Characterization of near-surface electrical properties of multi-crystalline silicon wafers   Original Research Article Pages 29-36 P. Drummond, A. Kshirsagar, J. Ruzyllo

9.

3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture   Original Research Article Pages 37-43 Jang-Gn Yun, Jong Duk Lee, Byung-Gook Park

10.

Experimental study of mobility degradation in ultrathin high-κ based MOSFETs   Original Research Article Pages 44-48 S.A. Atarah

11.

High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt   Original Research Article Pages 49-53 Bo Yuan, Xue Jun Zheng, Yi Qiang Chen, Bo Yang, Tong Zhang

12.

Spectral response of blue-sensitive Si photodetectors in SOI   Original Research Article Pages 54-58 J. Chu, Z. Han, F. Meng, Z. Wang

13.

Investigation on UV photodetector behavior of RF-sputtered ZnO by impedance spectroscopy   Original Research Article Pages 59-63 N.H. Al-Hardan, M.J. Abdullah, H. Ahmad, A. Abdul Aziz, L.Y. Low

14.

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness   Original Research Article Pages 64-67 W.B. Chen, C.H. Cheng, C.W. Lin, P.C. Chen, Albert Chin

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