ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 11, 2010

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Solid-State Electronics Volume 54, Issue 11,  Pages 1239-1492 (November 2010)

1.

Editorial Board Page IFC

Review

2.

Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs Pages 1239-1245 Gerard F. Santillan-Quiñonez, Victor Champac, Roberto S. Murphy

Regular Papers

3.

Reconfigurable Special Test Circuit of physics-based IGBT models parameter extraction Pages 1246-1256 Marco A. Rodríguez, Abraham Claudio, Maria Cotorogea, Leobardo H. González, Jesús Aguayo

4.

Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity Pages 1257-1262 Lingquan Wang, Peter M. Asbeck, Yuan Taur

5.

Improving the cell characteristics using arch-active profile in NAND flash memory having 60 nm design-rule Pages 1263-1268 Daewoong Kang, Hyungcheol Shin

6.

Solvent dependent behaviour of poly(9-vinylcarbazole)-based polymer light emitting diodes Pages 1269-1272 J.L. Alonso, J.C. Ferrer, A. Salinas-Castillo, R. Mallavia, S. Fernández de Ávila

7.

Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs Pages 1273-1277 C. Barrett, D. Lederer, G. Redmond, W. Xiong, J.P. Colinge, A.J. Quinn

8.

On the possibility of improving silicon solar cell efficiency through impurity photovoltaic effect and compensation Pages 1278-1283 Akeed A. Pavel, M. Rezwan Khan, N.E. Islam

9.

Impact of transparent conductive oxide on the admittance of thin film solar cells Pages 1284-1290 F. Principato, G. Cannella, S. Lombardo, M. Foti

10.

Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Pages 1291-1294 N. Tripathi, V. Jindal, F. Shahedipour-Sandvik, S. Rajan, A. Vert

11.

Retention modeling of nanocrystalline flash memories: A Monte Carlo approach Pages 1295-1299 Bahniman Ghosh, Hai Liu, Brian Winstead, Mark C. Foisy, Sanjay K. Banerjee

12.

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT Pages 1300-1303 Xiaoxu Cheng, Yan Wang

13.

Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation Pages 1304-1311 Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah, L. Chan

14.

Accurate small signal modeling and extraction of silicon MOSFET for RF IC application Pages 1312-1318 Yang Tang, Li Zhang, Yan Wang

15.

Multiple gate NVM cells with improved Fowler–Nordheim tunneling program and erase performances Pages 1319-1325 C. Gerardi, E. Tripiciano, G. Cinà, S. Lombardo, C. Garozzo, D. Corso, G. Betrò, C. Pace, F. Crupi

16.

Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils Pages 1326-1331 Jaehyun Moon, Yong-Hae Kim, Dong-Jin Park, Choong-Heui Chung, Seung-Youl Kang, Jin-Ho Lee

17.

A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Pages 1332-1338 Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer

18.

High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator Pages 1339-1342 Zhihua Dong, Jinyan Wang, C.P. Wen, Danian Gong, Ying Li, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang

19.

Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors Pages 1343-1348 R. Driad, R. Lösch, F. Benkhelifa, M. Kuri, J. Rosenzweig

20.

Scaling projections for Sb-based p-channel FETs Pages 1349-1358 M.G. Ancona, B.R. Bennett, J.B. Boos

21.

Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET Pages 1359-1366 Cecilia M. Mezzomo, Aurelie Bajolet, Augustin Cathignol, Emmanuel Josse, Gérard Ghibaudo

22.

AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study Pages 1367-1371 Y. Hayashi, S. Sugiura, S. Kishimoto, T. Mizutani

23.

2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET Pages 1372-1380 Mike Schwarz, Michaela Weidemann, Alexander Kloes, Benjamín Iñíguez

24.

Infrared light emitting device with two color emission Pages 1381-1383 Naresh C. Das

25.

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique Pages 1384-1391 Moonju Cho, Robin Degraeve, Philippe Roussel, Bogdan Govoreanu, Ben Kaczer, Mohammed B. Zahid, Eddy Simoen, Antonio Arreghini, Malgorzata Jurczak, Jan Van Houdt, Guido Groeseneken

26.

Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation Pages 1392-1397 Yudai Kamada, Shizuo Fujita, Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, Takashi Hirao

27.

Impact of circuit assist methods on margin and performance in 6T SRAM Pages 1398-1407 Randy W. Mann, Jiajing Wang, Satyanand Nalam, Sudhanshu Khanna, Geordie Braceras, Harold Pilo, Benton H. Calhoun

28.

Analytical current equation for short channel SOI multigate FETs including 3D effects Pages 1408-1415 Alexander Kloes, Michaela Weidemann, Mike Schwarz

29.

The effect of photodiode shape on charge transfer in CMOS image sensors Pages 1416-1420 Bhumjae Shin, Sangsik Park, Hyuntaek Shin

30.

Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET Pages 1421-1429 Sudipta Sarkar, Ananda S. Roy, Santanu Mahapatra

31.

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors Pages 1430-1433 S. Arulkumaran, G.I. Ng, C.H. Lee, Z.H. Liu, K. Radhakrishnan, N. Dharmarasu, Z. Sun

32.

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs Pages 1434-1437 O. Lancry, E. Pichonat, J. Réhault, M. Moreau, R. Aubry, C. Gaquière

33.

Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED Pages 1438-1443 S.H. Tu, J.C. Chen, F.S. Hwu, G.J. Sheu, F.L. Lin, S.Y. Kuo, J.Y. Chang, C.C. Lee

34.

Comparison and improvement of two core compact models for double-gate MOSFETs Pages 1444-1446 Xingye Zhou, Zhize Zhou, Jian Zhang, Lining Zhang, Chenyue Ma, Jin He, Xing Zhang

35.

Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films Pages 1447-1450 J.P. Kar, S. Kim, B. Shin, K.I. Park, K.J. Ahn, W. Lee, J.H. Cho, J.M. Myoung

36.

Analysis of transient behavior of AlGaN/GaN MOSHFET Pages 1451-1456 Y. Hayashi, S. Kishimoto, T. Mizutani

37.

A new vertical MOSFET “Vertical Logic Circuit (VLC) MOSFET” suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit Pages 1457-1462 Koji Sakui, Tetsuo Endoh

38.

An analytical model for square GAA MOSFETs including quantum effects Pages 1463-1469 E. Moreno, J.B. Roldán, F.G. Ruiz, D. Barrera, A. Godoy, F. Gámiz

39.

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Pages 1470-1473 D.F. Storm, D.S. Katzer, D.A. Deen, R. Bass, D.J. Meyer, J.A. Roussos, S.C. Binari, T. Paskova, E.A. Preble, K.R. Evans

40.

Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks Pages 1474-1478 Chun-Chang Lu, Kuei-Shu Chang-Liao, Che-Hao Tsao, Tien-Ko Wang

41.

Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes Pages 1479-1484 Albrecht Jander, Pallavi Dhagat

Short Communications

42.

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors Pages 1485-1487 M.C. Wang, S.W. Tsao, T.C. Chang, Y.P. Lin, Po-Tsun Liu, J.R. Chen

43.

Bipolar magnetotransistor sensor with digital output Pages 1488-1491 R.D. Tikhonov

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