ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 10, 2010

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Solid-State Electronics Volume 54, Issue 10,  Pages 1051-1238 (October 2010) Selected Papers from ISDRS 2009 Edited by Agis A. Iliadis and Akin Akturk

1.

Editorial Board Page IFC

Editorial

2.

Foreword Page 1051 Agis A. Iliadis, Akin Akturk

Regular Papers

3.

Application of a novel test system to characterize single-event effects at cryogenic temperatures Pages 1052-1059 Vishwanath Ramachandran, Matthew J. Gadlage, Jonathan R. Ahlbin, Balaji Narasimham, Michael L. Alles, Robert A. Reed, Bharat L. Bhuva, Lloyd W. Massengill, Jeffrey D. Black, Christopher N. Foster

4.

Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL) Pages 1060-1065 Seongjae Cho, Jung Hoon Lee, Shinichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Byung-Gook Park

5.

Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers Pages 1066-1070 Sicheng Liao, Ke Sun, Mitra Dutta, Michael A. Stroscio

6.

Epitaxial graphene top-gate FETs on silicon substrates Pages 1071-1075 Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

7.

Atomic layer deposited high-k nanolaminate capacitors Pages 1076-1082 S.W. Smith, K.G. McAuliffe, J.F. Conley Jr.

8.

Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node Pages 1083-1087 Ghader Darbandy, Romain Ritzenthaler, Francois Lime, Ivan Garduño, Magali Estrada, Antonio Cerdeira, Benjamin Iñiguez

9.

The spatial origin of current noise in semiconductor devices in the framework of semiclassical transport Pages 1088-1093 C.E. Korman, B.A. Noaman

10.

Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Pages 1094-1097 Chung-Hao Fu, Kuei-Shu Chang-Liao, Li-We Du, Tien-Ko Wang, W.F. Tsai, C.F. Ai

11.

Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs Pages 1098-1104 David J. Meyer, Robert Bass, D. Scott Katzer, David A. Deen, Steven C. Binari, Kevin M. Daniels, Charles R. Eddy Jr.

12.

High-temperature modeling of AlGaN/GaN HEMTs Pages 1105-1112 S. Vitanov, V. Palankovski, S. Maroldt, R. Quay

13.

Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel Pages 1113-1118 Li-Jung Liu, Kuei-Shu Chang-Liao, Wen-Chun Keng, Tien-Ko Wang

14.

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Pages 1119-1124 Hongping Zhao, Guangyu Liu, Ronald A. Arif, Nelson Tansu

15.

Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses Pages 1125-1129 J.L. Tomaino, A.D. Jameson, Yun-Shik Lee, J.P. Prineas, J.T. Steiner, M. Kira, S.W. Koch

16.

Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates Pages 1130-1134 A.V. Sampath, G.A. Garrett, E.D. Readinger, R.W. Enck, H. Shen, M. Wraback, J.R. Grandusky, L.J. Schowalter

17.

A toggle MRAM bit modeled in Verilog-A Pages 1135-1142 Linda M. Engelbrecht, Albrecht Jander, Pallavi Dhagat, Michael Hall

18.

ZnO nanobridge devices fabricated using carbonized photoresist Pages 1143-1149 B.D. Pelatt, C.C. Huang, J.F. Conley Jr.

19.

Crystal quality and conductivity type of (0 0 2) ZnO films on (1 0 0) Si substrates for device applications Pages 1150-1154 Saeed Esmaili Sardari, Agis A. Iliadis, M. Stamataki, D. Tsamakis, N. Konofaos

20.

Effects of fin width on memory windows in FinFET ZRAMs Pages 1155-1159 E.X. Zhang, D.M. Fleetwood, M.L. Alles, R.D. Schrimpf, F.E. Mamouni, W. Xiong, S. Cristoloveanu

21.

High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric Pages 1160-1165 Chung-Hao Fu, Kuei-Shu Chang-Liao, Hsueh-Yueh Lu, Chen-Chien Li, Tien-Ko Wang

22.

Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology Pages 1166-1172 Marko Koričić, Tomislav Suligoj, Hidenori Mochizuki, So-ichi Morita, Katsumi Shinomura, Hisaya Imai

23.

Reliable procedure for electrical characterization of MOS-based devices Pages 1173-1184 Josef Dobeš, Jan Míchal, Václav Paňko, Ladislav Pospíšil

24.

Facile pyrolytic synthesis of silicon nanowires Pages 1185-1191 Joo C. Chan, Hoang Tran, James W. Pattison, Shankar B. Rananavare

25.

A high efficient, low power, and compact charge pump by vertical MOSFETs Pages 1192-1196 Koji Sakui, Tetsuo Endoh

26.

Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics Pages 1197-1203 Chin-Lung Cheng, Jeng-Haur Horng, Kuei-Shu Chang-Liao, Jin-Tsong Jeng, Hung-Yang Tsai

27.

Controlled growth, patterning and placement of carbon nanotube thin films Pages 1204-1210 V.K. Sangwan, V.W. Ballarotto, D.R. Hines, M.S. Fuhrer, E.D. Williams

28.

Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas Pages 1211-1215 Filiz Yesilkoy, Kwangsik Choi, Mario Dagenais, Martin Peckerar

29.

A SiGe/Si multiple quantum well avalanche photodetector Pages 1216-1220 Po-Hsing Sun, Shu-Tong Chang, Yu-Chun Chen, Hongchin Lin

30.

Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions Pages 1221-1226 Hooyoung Song, Jin Soak Kim, Eun Kyu Kim, Sung-Ho Lee, Jae Bum Kim, Ji-su Son, Sung-Min Hwang

31.

Si implant-assisted Ohmic contacts to GaN Pages 1227-1231 Cuong Nguyen, Pankaj Shah, Edward Leong, Michael Derenge, Kenneth Jones

32.

The benefits and current progress of SiC SGTOs for pulsed power applications Pages 1232-1237 Aderinto Ogunniyi, Heather O’Brien, Aivars Lelis, Charles Scozzie, William Shaheen, Anant Agarwal, Jon Zhang, Robert Callanan, Victor Temple

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