| 2. | Foreward Page 809 A. Dimoulas, D. Tsoukalas | | | 6. | Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling Pages 841-848 Sokrates T. Pantelides, L. Tsetseris, M.J. Beck, S.N. Rashkeev, G. Hadjisavvas, I.G. Batyrev, B.R. Tuttle, A.G. Marinopoulos, X.J. Zhou, D.M. Fleetwood, R.D. Schrimpf | | | 7. | Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below Pages 849-854 C. Fenouillet-Beranger, P. Perreau, S. Denorme, L. Tosti, F. Andrieu, O. Weber, S. Monfray, S. Barnola, C. Arvet, Y. Campidelli, S. Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, L. Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, K. Bourdelle, B.-Y. Nguyen, O. Faynot, T. Skotnicki | | | 8. | Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Pages 855-860 T. Chiarella, L. Witters, A. Mercha, C. Kerner, M. Rakowski, C. Ortolland, L.-Å. Ragnarsson, B. Parvais, A. De Keersgieter, S. Kubicek, A. Redolfi, C. Vrancken, S. Brus, A. Lauwers, P. Absil, S. Biesemans, T. Hoffmann | | | 12. | Gate-all-around technology: Taking advantage of ballistic transport? Pages 883-889 J.L. Huguenin, G. Bidal, S. Denorme, D. Fleury, N. Loubet, A. Pouydebasque, P. Perreau, F. Leverd, S. Barnola, R. Beneyton, B. Orlando, P. Gouraud, T. Salvetat, L. Clement, S. Monfray, G. Ghibaudo, F. Boeuf, T. Skotnicki | | | 34. | On-chip Extraordinary Hall-effect sensors for characterization of nanomagnetic logic devices Pages 1027-1032 M. Becherer, J. Kiermaier, S. Breitkreutz, G. Csaba, X. Ju, J. Rezgani, T. Kießling, C. Yilmaz, P. Osswald, P. Lugli, D. Schmitt-Landsiedel | | |