| 2. | Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs Microelectronics Reliability, In Press, Corrected Proof, Available online 14 April 2010 Ray-Ming Lin, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, Meng-Chyi Wu | | | 13. | A generic numerical model for detection of terahertz radiation in MOS field-effect transistors Solid-State Electronics, In Press, Corrected Proof, Available online 10 April 2010 Yinglei Wang, Zhifeng Yan, Jingxuan Zhu, Lining Zhang, Xinnan Lin, Jin He, Juncheng Cao, Mansun Chan | | |