ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 6, 2010

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Solid-State Electronics Volume 54, Issue 6,  Pages 613-674 (June 2010)

1.

Editorial Board Page IFC

Letter

2.

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Pages 613-615 D.A. Deen, D.F. Storm, D.S. Katzer, D.J. Meyer, S.C. Binari

Regular Papers

3.

DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT Pages 616-620 M. Bawedin, M.J. Uren, F. Udrea

4.

Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates Pages 621-627 Md. Mahbub Satter, Anisul Haque

5.

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics Pages 628-634 Olayiwola Alatise, Sarah Olsen, Anthony O’Neill

6.

Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure Pages 635-641 A. Ortiz-Conde, A.D. Latorre Rey, W. Liu, W.-C. Chen, H.-C. Lin, J.J. Liou, J. Muci, F.J. García-Sánchez

7.

Temperature influence on photo-leakage-current characteristics of a-Si:H thin-film transistor Pages 642-645 S.W. Tsao, T.C. Chang, P.C. Yang, S.C. Chen, J. Lu, M.C. Wang, C.M. Huang, W.C. Wu, W.C. Kuo, Y. Shi

8.

Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors Pages 646-649 C.H. Cheng, H.H. Hsu, P.C. Chen, B.H. Liou, Albert Chin, F.S. Yeh

9.

Tungsten-dual polymetal technology for low resistive gate electrode Pages 650-653 Yong Soo Kim, Min-Gyu Sung, Sung-Ki Park

10.

Limits on vanadium oxide Mott metal–insulator transition field-effect transistors Pages 654-659 S. Hormoz, S. Ramanathan

11.

Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage Pages 660-664 Hiroshi Kambayashi, Yoshihiro Satoh, Shinya Ootomo, Takuya Kokawa, Takehiko Nomura, Sadahiro Kato, Tat-sing Pawl Chow

12.

Impact of parameter extraction methodology on variances of extracted parameter values Pages 665-670 Vladimir Milovanović, Ramses van der Toorn

13.

Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation Pages 671-674 J. Veirman, S. Dubois, N. Enjalbert, J.P. Garandet, D.R. Heslinga, M. Lemiti

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