ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 4, 2010

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Solid-State Electronics Volume 54, Issue 4,  Pages 343-504 (April 2010)

1.

Editorial Board Page IFC

Regular Papers

2.

A concisely asymmetric modeling of double-π equivalent circuit for on-chip spiral inductors Pages 343-348 Li Yu, Yang Tang, Yan Wang

3.

Electroplex emission of the blend film of PVK and DPVBi Pages 349-352 Junming Li, Zheng Xu, Fujun Zhang, Suling Zhao, Dandan Song, Haina Zhu, Jinglu Song, Yongsheng Wang, Xurong Xu

4.

Microwave power and simulation of S-band SiC MESFETs Pages 353-356 Chen Gang, Qin YuFei, Bai Song, Wu Peng, Li ZheYang, Chen Zheng, P. Han

5.

ESD performance of 65 nm partially depleted n and p channel SOI MOSFETs Pages 357-361 R. Mishra, D.E. Ioannou, S. Mitra, R. Gauthier, C. Seguin, R. Halbach

6.

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET) Pages 362-367 Heung-Jae Cho, Sanghoon Lee, Byung-Gook Park, Hyungcheol Shin

7.

A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology Pages 368-377 Wu-Te Weng, Yao-Jen Lee, Horng-Chih Lin, Tiao-Yuan Huang

8.

Thermal and spectral analysis of self-heating effects in high-power LEDs Pages 378-381 Nicholas M. Rada, Gregory E. Triplett

9.

Solution space for the independent-gate asymmetric DGFET Pages 382-384 Gajanan Dessai, Gennady Gildenblat

10.

Robustness of SuperJunction structures against cosmic ray induced breakdown Pages 385-391 Marina Antoniou, Florin Udrea, Friedhelm Bauer

11.

Highly durable and flexible memory based on resistance switching Pages 392-396 Sungho Kim, Oktay Yarimaga, Sung-Jin Choi, Yang-Kyu Choi

12.

A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells Pages 397-404 A. Datta, S. Mahapatra

13.

Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement Pages 405-409 Kyu-Heon Cho, Young-Shil Kim, Jiyong Lim, Young-Hwan Choi, Min-Koo Han

14.

A flash analog to digital converter on stainless steel foil substrate Pages 410-416 Abbas Jamshidi-Roudbari, Po-Chin Kuo, Miltiadis K. Hatalis

15.

SixGey:H-based micro-bolometers studied in the terahertz frequency range Pages 417-419 A. Kosarev, S. Rumyantsev, M. Moreno, A. Torres, S. Boubanga, W. Knap

16.

Modelling of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers Pages 420-426 Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi

17.

Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors Pages 427-432 Richard K. Oxland, Gary W. Paterson, Andrew R. Long, Faiz Rahman

18.

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes Pages 433-438 Monuko du Plessis, Pieter Rademeyer

19.

Storage stability improvement of pentacene thin-film transistors using polyimide passivation layer fabricated by vapor deposition polymerization Pages 439-442 Gun Woo Hyung, Jaehoon Park, Jun Ho Kim, Ja Ryong Koo, Young Kwan Kim

20.

Novel phase-change material GeSbSe for application of three-level phase-change random access memory Pages 443-446 Yifeng Gu, Zhitang Song, Ting Zhang, Bo Liu, Songlin Feng

21.

Nanostructured morphology of P3HT:PCBM bulk heterojunction solar cells Pages 447-451 Golap Kalita, Matsushima Masahiro, Wakita Koichi, Masayoshi Umeno

22.

The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time Pages 452-456 Yue Zhao, Zhiyong Lv, Zhao Li, Xiaoyan Liang, Jiahua Min, Linjun Wang, Weimin Shi, Yongyue Liu

23.

A C-band GaN based linear power amplifier with 55.7% PAE Pages 457-460 Weijun Luo, Xiaojuan Chen, Hui Zhang, Guoguo Liu, Yingkui Zheng, Xinyu Liu

24.

Effects of switching from ⟨1 1 0⟩ to ⟨1 0 0⟩ channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors Pages 461-474 Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah, L. Chan

25.

Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors Pages 475-478 H.-K. Lin, Y.-C. Lin, F.-H. Huang, T.-W. Fan, P.-C. Chiu, J.-I. Chyi, C.-H. Ko, T.-M. Kuan, M.-K. Hsieh, W.-C. Lee, C.H. Wann

26.

Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers Pages 479-483 Hai Zhong Zhang, Hong Tao Cao, Ai Hua Chen, Ling Yan Liang, Zhi Min Liu, Qing Wan

27.

Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures Pages 484-487 Kyung-Min Yoon, Ki-Yeon Yang, Kyeong-Jae Byeon, Heon Lee

28.

AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact Pages 488-491 Han Cheng Lee, Yan Kuin Su, Jia Ching Lin, Yi Cheng Cheng, Ta Ching Li, Kuo Jen Chang

29.

1.3 μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs Pages 492-496 M. Montes, A. Guzmán, A. Trampert, A. Hierro

30.

A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements Pages 497-503 Seungyeon Lee, Hyunjoo Lee, Sojeong Kim, Seungjun Lee, Hyungsoon Shin

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