ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 1, 2010

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Solid-State Electronics Volume 54, Issue 1,  Pages 1-84 (January 2010)

1.

Editorial Board Page IFC

Letters

2.

Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection Pages 1-3 F. Semendy, S. Singh, M. Litz, P. Wijewarnasuriya, K. Blaine, N. Dhar

3.

Study of GaN epilayers growth on freestanding Si cantilevers Pages 4-7 Jing Chen, Xi Wang, Aimin Wu, Bo Zhang, Xi Wang, Yuxin Wu, Jianjun Zhu, Hui Yang

Regular Papers

4.

Experimental measurement of work function in doped silicon surfaces Pages 8-13 Alexander Novikov

5.

Pulse-agitated self-convergent programming for 4-bit per cell dual charge storage layer flash memory Pages 14-17 Gang Zhang, Won Jong Yoo

6.

Operational upsets and critical new bit errors in CMOS digital inverters due to high power pulsed electromagnetic interference Pages 18-21 Kyechong Kim, Agis A. Iliadis

7.

A comparative study of photoconductivity and carrier transport in a-Si:H p–i–n solar cells with different back contacts Pages 22-27 R. Kaplan, B. Kaplan, S.S. Hegedus

8.

Analysis of noise in CMOS image sensor based on a unified time-dependent approach Pages 28-36 Igor Brouk, Amikam Nemirovsky, Kamal Alameh, Yael Nemirovsky

9.

Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents Pages 37-41 Yun-Chi Wu, Edward Yi Chang, Yueh-Chin Lin, Chi-Chung Kei, Mantu K. Hudait, Marko Radosavljevic, Yuen-Yee Wong, Chia-Ta Chang, Jui-Chien Huang, Shih-Hsuan Tang

10.

An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect Pages 42-47 Xiaoxu Cheng, Miao Li, Yan Wang

11.

Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure Pages 48-51 K. Baghbani Parizi, N. Peyvast, B. Kheyraddini Mousavi, S. Mohajerzadeh, M. Fathipour

12.

CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits Pages 52-57 Mohsen Hayati, Abbas Rezaei, Majid Seifi

13.

AC conductivity and dielectric properties of thermally evaporated PbTe thin films Pages 58-62 L. Kungumadevi, R. Sathyamoorthy, A. Subbarayan

14.

Improved infrared (IR) microscope measurements and theory for the micro-electronics industry Pages 63-66 C.H. Oxley, R.H. Hopper, G. Hill, G.A. Evans

15.

Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base Pages 67-78 A. Oudir, M. Mahdouani, S. Mansouri, R. Bourguiga, F. Pardo, J.L. Pelouard

16.

Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator Pages 79-83 S. Sugiura, Y. Hayashi, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka

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