ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 12, 2009

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Solid-State Electronics Volume 53, Issue 12,  Pages 1211-1334 (December 2009) Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009 Edited by Max Lemme and Siegfried Mantl

1.

Editorial Board Page IFC

Editorial

2.

Foreword Page 1211 Max C. Lemme, Siegfried Mantl

Regular Papers

3.

Advanced SOI CMOS transistor technology for high performance microprocessors Pages 1212-1219 M. Horstmann, M. Wiatr, A. Wei, J. Hoentschel, Th. Feudel, Th. Scheiper, R. Stephan, M. Gerhadt, S. Krügel, M. Raab

4.

Plastic circuits and tags for 13.56 MHz radio-frequency communication Pages 1220-1226 Kris Myny, Soeren Steudel, Peter Vicca, Monique J. Beenhakkers, Nick A.J.M. van Aerle, Gerwin H. Gelinck, Jan Genoe, Wim Dehaene, Paul Heremans

5.

Computing based on the physics of nano devices—A beyond-CMOS approach to human-like intelligent systems Pages 1227-1241 Tadashi Shibata

6.

A Haynes–Shockley experiment for spin-polarized electron transport in silicon Pages 1242-1245 Ian Appelbaum

7.

Mobility extraction in SOI MOSFETs with sub 1 nm body thickness Pages 1246-1251 M. Schmidt, M.C. Lemme, H.D.B. Gottlob, F. Driussi, L. Selmi, H. Kurz

8.

Improved effective mobility extraction in MOSFETs Pages 1252-1256 S.M. Thomas, T.E. Whall, E.H.C. Parker, D.R. Leadley, R.J.P. Lander, G. Vellianitis, J.R. Watling

9.

Silicon nanowire FETs with uniaxial tensile strain Pages 1257-1262 S.F. Feste, J. Knoch, S. Habicht, D. Buca, Q.-T. Zhao, S. Mantl

10.

DC and low frequency noise characterization of FinFET devices Pages 1263-1267 K. Bennamane, T. Boutchacha, G. Ghibaudo, M. Mouis, N. Collaert

11.

Investigation of 1/f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion Pages 1268-1272 J. Gyani, M. Valenza, S. Soliveres, F. Martinez, C. Le Royer, E. Augendre, K. Romanjek, C. Drazek

12.

Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3 Pages 1273-1279 Gerald Lucovsky, Kwun-Bum Chung, Leonardi Miotti, Karen Pas Bastos, Carolina Amado, Darrell Schlom

13.

Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs Pages 1280-1286 A. Hubert, M. Bawedin, S. Cristoloveanu, T. Ernst

14.

High density 3D memory architecture based on the resistive switching effect Pages 1287-1292 C. Kügeler, M. Meier, R. Rosezin, S. Gilles, R. Waser

15.

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs Pages 1293-1302 P. Palestri, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti, J. Walczak

16.

Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins Pages 1303-1312 Emanuele Baravelli, Luca De Marchi, Nicolò Speciale

17.

Non-metallic effects in silicided gate MOSFETs Pages 1313-1317 Noel Rodriguez, Francisco Gamiz, Raphael Clerc, Carlos Sampedro, Andres Godoy, Gerard Ghibaudo

18.

Impact ionization rates for strained Si and SiGe Pages 1318-1324 Thanh Viet Dinh, Christoph Jungemann

19.

Modeling and validation of piezoresistive coefficients in Si hole inversion layers Pages 1325-1333 A.T. Pham, C. Jungemann, B. Meinerzhagen

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