ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 11, 2009

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 53, Issue 11,  Pages 1149-1210 (November 2009)

1.

Editorial Board Page IFC

Regular Papers

2.

Growth of ZnO:Al films by RF sputtering at room temperature for solar cell applications Pages 1149-1153 Z.A. Wang, J.B. Chu, H.B. Zhu, Z. Sun, Y.W. Chen, S.M. Huang

3.

The effect of rubidium chloride on properties of organic light-emitting diodes Pages 1154-1158 Zhaoyue Lü, Zhenbo Deng, Hailiang Du, Degang Li, Ye Zou, Denghui Xu, Zheng Chen, Yongsheng Wang

4.

Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization Pages 1159-1164 Kaoru Toko, Isakane Nakao, Taizoh Sadoh, Takashi Noguchi, Masanobu Miyao

5.

Charge transfer and trapping properties in polymer gate dielectrics for non-volatile organic field-effect transistor memory applications Pages 1165-1168 Kang-Jun Baeg, Yong-Young Noh, Dong-Yu Kim

6.

71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications Pages 1169-1172 Feng Zhao

7.

Transient activation model for antimony in relaxed and strained silicon Pages 1173-1176 Y. Lai, N.S. Bennett, C. Ahn, N.E.B. Cowern, N. Cordero, J.C. Greer

8.

1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack Pages 1177-1182 L. Yan, E. Simoen, S.H. Olsen, A. Akheyar, C. Claeys, A.G. O’Neill

9.

Trap behaviors in AlGaN–GaN heterostructures by C–V characterization Pages 1183-1185 Shengyin Xie, Jiayun Yin, Sen Zhang, Bo Liu, Wei Zhou, Zhihong Feng

10.

Electrical characteristics of MIS capacitors with multi-stack thermal-agglomerating Ge nanocrystals in SiO2/SiNx dielectrics Pages 1186-1190 Shih-Yung Lo, Chao-Wun Peng, Jyh-Wong Hong

11.

Closed-form partitioned gate tunneling current model for NMOS devices with an ultra-thin gate oxide Pages 1191-1197 C.H. Lin, J.B. Kuo

12.

Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1−xGex structures on Si(0 0 1) substrates Pages 1198-1201 Takuya Mizutani, Osamu Nakatsuka, Akira Sakai, Hiroki Kondo, Masaki Ogawa, Shigeaki Zaima

13.

Multi-domain multi-level abstraction modelling of integrated power devices Pages 1202-1208 Alberto Castellazzi, Mauro Ciappa

Corrigendum

14.

Corrigendum to “Symmetric linearization method for double-gate and surrounding-gate MOSFET models” [Solid State Electronics 53(5) (2009) 548–556] Page 1209 Gajanan Dessai, Aritra Dey, Gennady Gildenblat, Geert D.J. Smit

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