ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 10, 2009

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 53, Issue 10,  Pages 1059-1148 (October 2009)

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Editorial Board Page IFC

Regular Papers

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The split-gate flash memory with an extra select gate for automotive applications Pages 1059-1062 Yong-Shiuan Tsair, Yean-Kuen Fang, Yu-Hsiung Wang, Wen-Ting Chu, Chia-Ta Hsieh, Yung-Tao Lin, Chung S. Wang, Myron Wong, Scott Lee, Richard Smolen, Bill Liu

3.

Stability of PMMA on P3HT PTFTs under stress Pages 1063-1066 M. Estrada, I. Mejía, A. Cerdeira, J. Pallares, L.F. Marsal, B. Iñiguez

4.

Comparative analysis of unity gain frequency of top and bottom-contact organic thin film transistors Pages 1067-1075 M. Nurul Islam, B. Mazhari

5.

Method of extracting effective channel length for nano-scale n-MOSFETs Pages 1076-1085 H.W. Choi, N.H. Lee, H.S. Kang, B.K. Kang

6.

Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation Pages 1086-1091 H.K. Lee, Y.M. Song, Y.T. Lee, J.S. Yu

7.

A study of gateless OTP cell using a 45 nm CMOS compatible process Pages 1092-1098 Yi-Hung Tsai, Kai-Chun Lin, Hsin-Yi Chiu, Hung-Sheng Shih, Ya-Chin King, Chrong Jung Lin

8.

Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency Pages 1099-1102 Eun-Ju Hong, Kyeong-Jae Byeon, Hyoungwon Park, Jaeyeon Hwang, Heon Lee, Kyungwoo Choi, Hyeong-Seok Kim

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Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Pages 1103-1106 Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer

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Thickness-dependent threshold voltage in polycrystalline pentacene-based thin-film transistors Pages 1107-1111 Yu-Wu Wang, Horng-Long Cheng

11.

Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure Pages 1112-1115 Seong-Dong Kim

12.

Preparation and characterization of solid n-TiO2/p-NiO hetrojunction electrodes for all-solid-state dye-sensitized solar cells Pages 1116-1125 Yi-Mu Lee, Chun-Hung Lai

13.

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors Pages 1126-1129 C. Sandow, J. Knoch, C. Urban, Q.-T. Zhao, S. Mantl

14.

Multiband simulation of quantum transport in nanoscale double-gate MOSFETs Pages 1130-1134 Hideyuki Iwata, Toshihiro Matsuda, Takashi Ohzone

15.

Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(1 1 0) substrates Pages 1135-1143 Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima

16.

Finite element simulation of metal–semiconductor–metal photodetector Pages 1144-1148 G. Guarino, W.R. Donaldson, M. Mikulics, M. Marso, P. Kordoš, Roman Sobolewski

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