ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 9, 2009

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Solid-State Electronics Volume 53, Issue 9,  Pages 921-1058 (September 2009)

1.

Editorial Board Page IFC

Regular Papers

2.

TCAD-based demonstration of improved spacer select gate EEPROM cell architecture Pages 921-924 Yon-Sup Bahng (Pang)

3.

Optimization of the back contact in c-Si solar cells Pages 925-930 S.M. Yang, J. Plá

4.

A K-band differential Colpitts cross-coupled VCO in 0.13 μm CMOS Pages 931-934 Sheng-Lyang Jang, Chien-Feng Lee, Chia-Wei Chang

5.

Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance Pages 935-939 D.L. Pulfrey, Li Chen

6.

Wide temperature operational range of a 1310 nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coating Pages 940-943 Chi-Yu Wang, Jin-Cheng Hsu, Hung-Pin Shiao

7.

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) Pages 944-954 P. Lefranc, D. Planson, H. Morel, D. Bergogne

8.

The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method Pages 955-958 Qian Feng, Li-Mei Li, Yue Hao, Jin-Yu Ni, Jin-Cheng Zhang

9.

Impact of metal silicide layout covering source/drain diffusion region on minimization of parasitic resistance of triple-gate SOI MOSFET and proposal of practical design guideline Pages 959-971 Yasuhisa Omura, Kazuhisa Yoshimoto, Osanori Hayashi, Hitoshi Wakabayashi, Shinya Yamakawa

10.

Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot Pages 972-978 Murat Gülnahar, Hasan Efeoğlu

11.

Comparison of theory and experiment in a modified BICFET/HFET structure Pages 979-987 J. Yao, J. Cai, H. Opper, R. Basilica, R. Garber, G.W. Taylor

12.

Particle swarm optimization versus genetic algorithms to study the electron mobility in wurtzite GaN-based devices Pages 988-992 F. Djeffal, N. Lakhdar, M. Meguellati, A. Benhaya

13.

Tunable patterned ferroelectric parallel-plate varactors for matching network Pages 993-997 Xiao-Yu Zhang, P. Wang, Feng Xu, C.K. Ong

14.

A comparative study of the DRAM leakage mechanism for planar and recessed channel MOSFETs Pages 998-1000 Myoung Jin Lee, Chang-Ki Baek, Sooyoung Park, In-Young Chung, Young June Park

15.

Drain current model for nanoscale double-gate MOSFETs Pages 1001-1008 Venkatnarayan Hariharan, Rajesh Thakker, Karmvir Singh, Angada B. Sachid, M.B. Patil, Juzer Vasi, V. Ramgopal Rao

16.

Transport properties in semiconductor-gas discharge electronic devices Pages 1009-1015 Y. Sadiq, H. (Yücel) Kurt, A.O. Albarzanji, S.D. Alekperov, B.G. Salamov

17.

A spin field effect transistor using stray magnetic fields Pages 1016-1019 Hyun Cheol Koo, Jonghwa Eom, Joonyeon Chang, Suk-Hee Han

18.

An extended drain current conductance extraction method and its application to DRAM support and array devices Pages 1020-1031 Mojtaba Joodaki

19.

Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips Pages 1032-1035 Xiaojuan Sun, Lizhong Hu, Hang Song, Zhiming Li, Dabing Li, Hong Jiang, Guoqing Miao

20.

The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer Pages 1036-1040 Miin-Horng Juang, C.W. Huang, C.W. Chang, D.C. Shye, C.C. Hwang, J.L. Wang, S.L. Jang

21.

A compact model of fringing field induced parasitic capacitance for deep sub-micrometer MOSFETs Pages 1041-1045 Xi Liu, Xiaoshi Jin, Jong-Ho Lee

22.

Feasibility study on rapid thermal processing Pages 1046-1049 S.C. Karle, A.D. Shaligram

23.

Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube composites Pages 1050-1055 Wei Xue, Tianhong Cui

Short Communication

24.

Efficiency enhancement of organic light emitting diodes by NaOH surface treatment of the ITO anode Pages 1056-1058 P. Cusumano

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