ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 8, 2009

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Solid-State Electronics Volume 53, Issue 8,  Pages 815-920 (August 2009) Papers Selected from the 4th International SiGe Technology and Device Meeting (ISTDM 2008) Edited by Douglas J. Paul

1.

Editorial Board Page IFC

Editorial

2.

Foreword Page 815 Douglas J. Paul

Regular Papers

3.

Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties Pages 816-823 Junqi Xie, J. Tolle, V.R. D’Costa, C. Weng, A.V.G. Chizmeshya, J. Menendez, J. Kouvetakis

4.

Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGe Pages 824-827 Yuji Yamamoto, Klaus Köpke, Günter Weidner, Bernd Tillack

5.

High temperature antimony ion implantation in strained silicon-on-insulator Pages 828-832 D. Buca, W. Heiermann, H. Trinkaus, B. Holländer, U. Breuer, S. Mantl

6.

Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(0 0 1) substrates Pages 833-836 T.F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.J. Osten

7.

Microstructures in directly bonded Si substrates Pages 837-840 Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

8.

Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation Pages 841-849 Dong Wang, Hiroshi Nakashima

9.

Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structures Pages 850-857 A. Abbadie, F. Allibert, F. Brunier

10.

New method to calibrate the pattern dependency of selective epitaxy of SiGe layers Pages 858-861 M. Kolahdouz, L. Maresca, M. Ostling, D. Riley, R. Wise, H.H. Radamson

11.

Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica Pages 862-864 Bouchaib Adnane, Yi-Fan Lai, Jia-Min Shieh, Per-Olof Holtz, Wei-Xin Ni

12.

Si and SiGe faceting during selective epitaxy Pages 865-868 Clément Pribat, Germain Servanton, Linda Depoyan, Didier Dutartre

13.

Formation of ultra-shallow base with high boron-doping concentration for high-performance SiGe HBTs Pages 869-872 Katsuya Oda, Makoto Miura, Hiromi Shimamoto, Katsuyoshi Washio

14.

A selective epitaxy collector module for high-speed Si/SiGe:C HBTs Pages 873-876 B. Geynet, P. Chevalier, F. Brossard, B. Vandelle, T. Schwartzmann, M. Buczko, G. Avenier, D. Dutartre, G. Dambrine, F. Danneville, A. Chantre

15.

Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system Pages 877-879 Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

16.

3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL Pages 880-887 Wei-Ching Wang, Shu-Tong Chang, Jacky Huang, Shin-Jiun Kuang

17.

Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device Pages 888-891 Chung-Hao Fu, Kuei-Shu Chang-Liao, Kuen-Hong Tsai, Tien-Ko Wang, Yao-Jen Lee

18.

The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETs Pages 892-896 C.Y. Cheng, Y.K. Fang, J.C. Liao, T.J. Wang, Y.T. Hou, P.F. Hsu, K.C. Lin, K.T. Huang, T.L. Lee, M.S. Liang

19.

Investigation of interface characteristics in strained-Si nMOSFETs Pages 897-900 Cheng Wen Kuo, San Lein Wu, Shoou Jinn Chang, Hau Yu Lin, Yen Ping Wang, Shang Chao Hung

20.

Low-frequency noise in buried-channel SiGe n-MODFETs Pages 901-904 Anuj Madan, John D. Cressler, Steven J. Koester

21.

DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical–mechanical-polishing technique Pages 905-908 Hau Yu Lin, San Lein Wu, Shoou Jinn Chang, Cheng Wen Kuo, Yen Ping Wang, Shang Chao Hung

22.

Spectral responsivity of fast Ge photodetectors on SOI Pages 909-911 M. Kaschel, M. Oehme, O. Kirfel, E. Kasper

23.

Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1−xGex/Si(1 0 0) heterostructure Pages 912-915 Takahiro Seo, Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

24.

A 10.5 Gb/s transimpedance amplifier using capacitive emitter degeneration technique Pages 916-919 Ji-Chen Huang, Kuang-Sheng Lai, Klaus Y.J. Hsu

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