ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 6, 2009

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 53, Issue 6,  Pages 563-674 (June 2009)

1.

Editorial Board Page IFC

Letters

2.

Influence of the ferroelectric–electrode interface on the characteristics of MFIS-FETs Pages 563-566 J. Zhang, M.H. Tang, J.X. Tang, F. Yang, H.Y. Xu, W.F. Zhao, Y.C. Zhou

3.

Degradation of high power LEDs at dynamic working conditions Pages 567-570 Lianqiao Yang, Jianzheng Hu, Moo Whan Shin

4.

Imaging of field-effect transistors by focused terahertz radiation Pages 571-573 D.B. Veksler, A.V. Muravjov, V.Yu. Kachorovskii, T.A. Elkhatib, K.N. Salama, X.-C. Zhang, M.S. Shur

Regular Papers

5.

Current transport of GaAsSb-based DHBTs with different emitter structures Pages 574-577 Chun-ting Pan, Che-ming Wang, Yue-ming Hsin, H.J. Zhu, J.M. Kuo, Y.C. Kao

6.

The influence of morphologies and doping of nanostructured ZnO on the field emission behaviors Pages 578-583 Zesong Zhang, Jingyun Huang, Haiping He, Shisheng Lin, Haiping Tang, Huanming Lu, Zhizhen Ye

7.

Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices Pages 584-589 Friedhelm D. Bauer

8.

Controlled on-chip heat transfer for directed heating and temperature reduction Pages 590-598 Zeynep Dilli, Akin Akturk, Neil Goldsman, George Metze

9.

Impact of forward and reverse deep n-well biasing on the 1/f noise of 0.13 μm n-channel MOSFETs in triple well technology Pages 599-606 Lih Chieh Png, Kok Wai Chew, Kiat Seng Yeo

10.

A new analytical threshold voltage model for the doped polysilicon thin-film transistors Pages 607-612 Weijing Wu, Ruohe Yao, Xueren Zheng

11.

Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates Pages 613-620 N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, C. Claeys, E. Simoen

12.

Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric Pages 621-625 Jae Bon Koo, Seong Yeol Kang, In Kyu You, Kyung Soo Suh

13.

1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors Pages 626-629 Kristel Fobelets, Sergey L. Rumyantsev, Thomas Hackbarth, Michael S. Shur

14.

Weak rectifying behaviour of p-SnS/n-ITO heterojunctions Pages 630-634 M. Devika, N. Koteeswara Reddy, K. Ramesh, F. Patolsky, K.R. Gunasekhar

15.

Ambipolar microcrystalline silicon transistors and inverters Pages 635-639 Kah-Yoong Chan, Dietmar Knipp, Joachim Kirchhoff, Aad Gordijn, Helmut Stiebig

16.

Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate Pages 640-643 Jong-Won Lee, Seong-Wan Ryu, Dong Ok Shin, Bong Hoon Kim, Sang Ouk Kim, Yang-Kyu Choi

17.

A single-poly EEPROM cell for embedded memory applications Pages 644-648 A. Di Bartolomeo, H. Rücker, P. Schley, A. Fox, S. Lischke, Kee-Yeol Na

18.

Compact model of short-channel MOSFETs considering quantum mechanical effects Pages 649-657 G.S. Jayadeva, Amitava DasGupta

19.

TCAD modeling and simulation of boron deactivation in NMOS carbon-implanted channel Pages 658-662 K.R.C. Mok, F. Benistant, R.S. Teo, S. Chu

20.

Stable aluminium ohmic contact to surface modified porous silicon Pages 663-668 J. Kanungo, S. Maji, H. Saha, S. Basu

21.

Modeling of kink effect in polycrystalline silicon thin-film transistors Pages 669-673 Wanling Deng, Xueren Zheng

Send my e-mail in plain text format

Modify or Remove My Alerts

Access the ScienceDirect Info site if you have questions about this message or other features of this service.

This email has been sent to you by ScienceDirect, a division of Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The Netherlands, Tel.+31 20 485 3911. ScienceDirect respects your privacy and does not disclose, rent or sell your personal information to any non-affiliated third parties without your consent, except as may be stated in the ScienceDirect online privacy policy. By using email or alert services, you agree to comply with the ScienceDirect Terms and Conditions. To unsubscribe to alert services, please go to the Alerts page. Copyright © 2009 ScienceDirect. All rights reserved. Any unauthorized use, reproduction, or transfer of this message or its contents, in any medium, is strictly prohibited. ScienceDirect® is a registered trademark of Elsevier B.V. Delivery Job ID: 11204:215197100:11212:183236930