ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 4, 2009

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Solid-State Electronics Volume 53, Issue 4,  Pages 401-468 (April 2009) Special Issue with papers selected from the Ultimate Integration on Silicon Conference, ULIS 2008 Edited by Luca Selmi, David Esseni and Pierpaolo Palestri

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Editorial Board Page IFC

Editorial

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Foreword Page 401 Luca Selmi, David Esseni, Pierpaolo Palestri

Regular Papers

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Low-voltage scaling limitations for nano-scale CMOS LSIs Pages 402-410 Kiyoo Itoh, Masashi Horiguchi

4.

Innovative devices for integrated circuits – A design perspective Pages 411-417 D. Schmitt-Landsiedel, C. Werner

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Impact of variability on the performance of SOI Schottky barrier MOSFETs Pages 418-423 S.F. Feste, M. Zhang, J. Knoch, S. Mantl

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Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs Pages 424-432 N. Serra, P. Palestri, G.D.J. Smit, L. Selmi

7.

High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Pages 433-437 Tao Chuan Lim, Olivier Rozeau, Christel Buj, Michel Paccaud, Sylvie Lepilliet, Gilles Dambrine, François Danneville

8.

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Pages 438-444 S. Monaghan, P.K. Hurley, K. Cherkaoui, M.A. Negara, A. Schenk

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Simulation of self-heating effects in different SOI MOS architectures Pages 445-451 M. Braccioli, G. Curatola, Y. Yang, E. Sangiorgi, C. Fiegna

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On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Pages 452-461 D. Rideau, M. Feraille, M. Michaillat, Y.M. Niquet, C. Tavernier, H. Jaouen

11.

Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs Pages 462-467 Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani

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