ScienceDirect Alert: Solid-State Electronics, Vol. 53, Iss. 3, 2009

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 53, Issue 3,  Pages 251-400 (March 2009)

1.

Editorial Board Page IFC

Regular Papers

2.

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization Pages 251-255 A.V. Vishnyakov, Yu.N. Novikov, V.A. Gritsenko, K.A. Nasyrov

3.

Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs Pages 256-265 Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta, Amitava DasGupta

4.

A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric Pages 266-270 Jae-Hong Kwon, Sang-Il Shin, Jinnil Choi, Myung-Ho Chung, Hochul Kang, Byeong-Kwon Ju

5.

Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (1 0 0) and (1 1 0) silicon surfaces Pages 271-275 Md. Khalid Ashraf, Asif Islam Khan, Anisul Haque

6.

Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure Pages 276-278 Feng Rao, Zhitang Song, Liangcai Wu, Yuefeng Gong, Songlin Feng, Bomy Chen

7.

Charge trapping behavior of SiO2-Anodic Al2O3–SiO2 gate dielectrics for nonvolatile memory applications Pages 279-284 Chun-Hsien Huang, En-Jui Li, Wai-Jyh Chang, Na-Fu Wang, Chen-I Hung, Mau-Phon Houng

8.

A comprehensive model of frequency dispersion in 4H–SiC MESFET Pages 285-291 Hongliang Lu, Yimen Zhang, Yuming Zhang, Tao Zhang

9.

Gated tunnel diode in oscillator applications with high frequency tuning Pages 292-296 L.-E. Wernersson, M. Ärlelid, M. Egard, E. Lind

10.

Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors Pages 297-307 I. Marano, V. d’Alessandro, N. Rinaldi

11.

Performance evaluation of sphere-form cathodes in the fabrication of optoelectronic In2O3SnO2 PET Pages 308-313 P.S. Pa

12.

Measurement of the MOSFET drain current variation under high gate voltage Pages 314-319 Kazuo Terada, Tetsuo Chagawa, Jianyu Xiang, Katsuhiro Tsuji, Takaaki Tsunomura, Akio Nishida

13.

Visualization of local gate control in a ZnO inter-nanowire junction device Pages 320-323 Jin-Hyung Lim, Hyun Jin Ji, Goo-Eun Jung, Kyung Hoon Chung, Gyu-Tae Kim, Jeong Sook Ha, Ji-Yong Park, Se-Jong Kahng

14.

Negative capacitance in light-emitting devices Pages 324-328 C.Y. Zhu, L.F. Feng, C.D. Wang, H.X. Cong, G.Y. Zhang, Z.J. Yang, Z.Z. Chen

15.

Zinc tin oxide based driver for highly transparent active matrix OLED displays Pages 329-331 Patrick Görrn, Fatemeh Ghaffari, Thomas Riedl, Wolfgang Kowalsky

16.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Pages 332-335 X.L. Wang, T.S. Chen, H.L. Xiao, J. Tang, J.X. Ran, M.L. Zhang, C. Feng, Q.F. Hou, M. Wei, L.J. Jiang, J.M. Li, Z.G. Wang

17.

Optical properties studies in InGaN/GaN multiple-quantum well Pages 336-340 Lihong Zhu, Baolin Liu

18.

Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT Pages 341-348 M.A. Huque, S.A. Eliza, T. Rahman, H.F. Huq, S.K. Islam

19.

Discussions and extension of van Vliet’s noise model for high speed bipolar transistors Pages 349-354 Kejun Xia, Guofu Niu

20.

Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation Pages 355-358 Banani Sen, Hei Wong, B.L. Yang, P.K. Chu, K. Kakushima, H. Iwai

21.

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs Pages 359-363 A. Tsormpatzoglou, C.A. Dimitriadis, M. Mouis, G. Ghibaudo, N. Collaert

22.

Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators Pages 364-370 M.I. Vexler, A. Kuligk, B. Meinerzhagen

23.

Formation of polycrystalline-Si thin-film-transistors with a retrograde channel doping profile Pages 371-375 Miin-Horng Juang, S.-H. Cheng, S.-L. Jang

24.

A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires Pages 376-382 A. Esposito, M. Luisier, M. Frey, A. Schenk

25.

Design and numerical analysis of a polarization-insensitive quantum well optoelectronic integrated amplifier-switch Pages 383-388 E. Darabi, V. Ahmadi

26.

Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM Pages 389-391 Seong-Wan Ryu, Jin-Woo Han, Chung-Jin Kim, Sungho Kim, Yang-Kyu Choi

27.

Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack Pages 392-396 F. Rochette, M. Cassé, M. Mouis, A. Haziot, T. Pioger, G. Ghibaudo, F. Boulanger

Short Communication

28.

Pure red organic light-emitting diode based on a europium complex Pages 397-399 Qin Xue, Ping Chen, Jianhua Lu, Guohua Xie, Jingying Hou, Shiyong Liu, Yi Zhao, Liying Zhang, Bin Li

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