Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures -- January 2009

Volume 27, Issue 1 , pp. 1-550

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Regular Articles Brief Reports and Comments Errata PAPERS FROM THE 15TH WORKSHOP ON DIELECTRICS IN MICROELECTRONICS

Regular Articles
	Thick membrane operated rf microelectromechanical system switch with low actuation voltage Jongseok Kim, Sangwook Kwon, Youngtack Hong, Heemoon Jeong, Insang Song, and Byeongkwon Ju pp. 1-5 Abstract    Full Text: [ HTML Sectioned HTML   PDF (1013 kB)  ]    Order
	Deprotection blur in extreme ultraviolet photoresists: Influence of base loading and post-exposure bake temperature Christopher N. Anderson and Patrick P. Naulleau pp. 6-10 Abstract    Full Text: [ HTML Sectioned HTML   PDF (490 kB)  ]    Order
	Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes Jeffrey A. Bean, Badri Tiwari, Gary H. Bernstein, P. Fay, and Wolfgang Porod pp. 11-14 Abstract    Full Text: [ HTML Sectioned HTML   PDF (400 kB)  ]    Order
	Development of a vacuum packaged nanodiamond lateral field emission device K. Subramanian, R. Schroeder, W. P. Kang, and J. L. Davidson pp. 15-18 Abstract    Full Text: [ HTML Sectioned HTML   PDF (528 kB)  ]    Order
	Duplication of nanoimprint templates by a novel SU-8/SiO2/PMMA trilayer technique Jing Wan, Zhen Shu, Shao-Ren Deng, Shen-Qi Xie, Bing-Rui Lu, Ran Liu, Yifang Chen, and Xin-Ping Qu pp. 19-22 Abstract    Full Text: [ HTML Sectioned HTML   PDF (358 kB)  ]    Order
	A silicon-germanium W-structure photodiode for near-infrared detection Dyan Ali, Phillip Thompson, Joseph DiPasquale, III, and Christopher J. K. Richardson pp. 23-27 Abstract    Full Text: [ HTML Sectioned HTML   PDF (553 kB)  ]    Order
	Lift-off and hybrid applications with ma-n 1405 negative-tone resist A. Aassime and V. Mathet pp. 28-32 Abstract    Full Text: [ HTML Sectioned HTML   PDF (843 kB)  ]    Order
	Dependence of etch rates of silicon substrates on the use of C4F8 and C4F6 plasmas in the deposition step of the Bosch process Hyongmoo Rhee, Hae Min Lee, Yun Mi Namkoung, Chang-Koo Kim, Heeyeop Chae, and Yil Wook Kim pp. 33-40 Abstract    Full Text: [ HTML Sectioned HTML   PDF (647 kB)  ]    Order
	Field-emission properties of carbon nanotubes grown using Cu–Cr catalysts Zhejuan Zhang, Daniel H. C. Chua, Yang Gao, Yanping Zhang, Zhe Tang, Beng Kang Tay, Tao Feng, Zhuo Sun, and Yiwei Chen pp. 41-46 Abstract    Full Text: [ HTML Sectioned HTML   PDF (419 kB)  ]    Order
	Detailed characterization of hydrogen silsesquioxane for e-beam applications in a dynamic random access memory pilot line environment K. Keil, K.-H. Choi, C. Hohle, J. Kretz, L. Szikszai, and J.-W. Bartha pp. 47-51 Abstract    Full Text: [ HTML Sectioned HTML   PDF (381 kB)  ]    Order
	Some peculiarities of resist-profile simulation for positive-tone chemically amplified resists in electron-beam lithography K. Vutova, E. Koleva, G. Mladenov, and I. Kostic pp. 52-57 Abstract    Full Text: [ HTML Sectioned HTML   PDF (309 kB)  ]    Order
	Absorber stack with transparent conductive oxide layer for extreme ultraviolet lithography Hee Young Kang and Chang Kwon Hwangbo pp. 58-60 Abstract    Full Text: [ HTML Sectioned HTML   PDF (330 kB)  ]    Order
	Fabrication of nanoscale bioarrays for the study of cytoskeletal protein binding interactions using nanoimprint lithography M. Schvartzman, K. Nguyen, M. Palma, J. Abramson, J. Sable, J. Hone, M. P. Sheetz, and S. J. Wind pp. 61-65 Abstract    Full Text: [ HTML Sectioned HTML   PDF (390 kB)  ]    Order
	Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool Patrick P. Naulleau, Christopher N. Anderson, Jerrin Chiu, Kim Dean, Paul Denham, Simi George, Kenneth A. Goldberg, Brian Hoef, Gideon Jones, Chawon Koh, Bruno La Fontaine, Andy Ma, Warren Montgomery, Dimitra Niakoula, Joo-on Park et al. pp. 66-70 Abstract    Full Text: [ HTML Sectioned HTML   PDF (657 kB)  ]    Order
	Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process S. Y. Son, J. H. Jang, P. Kumar, R. K. Singh, J. H. Yuh, H. Cho, and C. J. Kang pp. 71-75 Abstract    Full Text: [ HTML Sectioned HTML   PDF (457 kB)  ]    Order
	Self-assembly solder process to form three-dimensional structures on silicon M. Rao, J. C. Lusth, and S. L. Burkett pp. 76-80 Abstract    Full Text: [ HTML Sectioned HTML   PDF (612 kB)  ]    Order
	Ti0.94Fe0.06O2/Ti0.94Mn0.06O2 superlattice films deposited on atomic-scale flattened sapphire substrates for dilute magnetic semiconductor applications Nak-Jin Seong, Juan Jiang, and Soon-Gil Yoon pp. 81-84 Abstract    Full Text: [ HTML Sectioned HTML   PDF (466 kB)  ]    Order
	Forbidden pitch improvement using modified illumination in lithography M. L. Ling, C. J. Tay, C. Quan, G. S. Chua, and Q. Lin pp. 85-91 Abstract    Full Text: [ HTML Sectioned HTML   PDF (708 kB)  ]    Order
	Plasma-surface interactions of advanced photoresists with C4F8/Ar discharges: Plasma parameter dependencies S. Engelmann, R. L. Bruce, M. Sumiya, T. Kwon, R. Phaneuf, G. S. Oehrlein, C. Andes, D. Graves, D. Nest, and E. A. Hudson pp. 92-106 Abstract    Full Text: [ HTML Sectioned HTML   PDF (1704 kB)  ]    Order
	Band bending and adsorption/desorption kinetics on N-polar GaN surfaces Soojeong Choi, Tong-Ho Kim, Pae Wu, April Brown, Henry O. Everitt, Maria Losurdo, and Giovanni Bruno pp. 107-112 Abstract    Full Text: [ HTML Sectioned HTML   PDF (696 kB)  ]    Order
	Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes R. Ramos, G. Cunge, O. Joubert, and T. Lill pp. 113-121 Abstract    Full Text: [ HTML Sectioned HTML   PDF (1006 kB)  ]    Order
	Transformation of polycrystalline tungsten to monocrystalline tungsten W(100) and its potential application in Schottky emitters A. K. Dokania, Ruud Hendrikx, and P. Kruit pp. 122-125 Abstract    Full Text: [ HTML Sectioned HTML   PDF (843 kB)  ]    Order
	Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors Wantae Lim, Jung Hun Jang, S.-H. Kim, D. P. Norton, V. Craciun, S. J. Pearton, F. Ren, and H. Chen pp. 126-129 Abstract    Full Text: [ HTML Sectioned HTML   PDF (443 kB)  ]    Order
	Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Jun-Cheng Liu, Yi-Cheng Chen, Yao-Feng Chang, Shin-Yuan Wang, Chi-Chung Kei, Chien-Nan Hsiao, and Chun-Yen Chang pp. 130-133 Abstract    Full Text: [ HTML Sectioned HTML   PDF (489 kB)  ]    Order
	Metal nanowire fabrication by force microscopy lithography using amorphous arsenic sulfide resist layer H. D. Fonseca Filho, R. Prioli, and M. H. P. Maurício pp. 134-138 Abstract    Full Text: [ HTML Sectioned HTML   PDF (470 kB)  ]    Order
	Electron optics of skewed micro-Einzel lenses M. J. van Bruggen, B. van Someren, and P. Kruit pp. 139-147 Abstract    Full Text: [ HTML Sectioned HTML   PDF (753 kB)  ]    Order
	Synthesis, structural and magnetic properties of epitaxial MgFe2O4 thin films by molecular beam epitaxy J. Cheng, V. K. Lazarov, G. E. Sterbinsky, and B. W. Wessels pp. 148-151 Abstract    Full Text: [ HTML Sectioned HTML   PDF (354 kB)  ]    Order
	Near field emission scanning electron microscopy T. L. Kirk, U. Ramsperger, and D. Pescia pp. 152-155 Abstract    Full Text: [ HTML Sectioned HTML   PDF (271 kB)  ]    Order
	SiOx-planarized and transistor outlook-packaged oxide-confined vertical-cavity surface-emitting lasers with ring-shape geometry for high-speed (10  Gb/s) operation Chia-Lung Tsai, Jia-Qing Lin, Feng-Ming Lee, Yi-Lun Chou, and Meng-Chyi Wu pp. 156-160 Abstract    Full Text: [ HTML Sectioned HTML   PDF (585 kB)  ]    Order
	REBL: A novel approach to high speed maskless electron beam direct write lithography Paul Petric, Chris Bevis, Allen Carroll, Henry Percy, Marek Zywno, Keith Standiford, Alan Brodie, Noah Bareket, and Luca Grella pp. 161-166 Abstract    Full Text: [ HTML Sectioned HTML   PDF (702 kB)  ]    Order
	Mitigation of microloading effect in nanoimprint mask fabrication Raghunath Murali pp. 167-168 Abstract    Full Text: [ HTML Sectioned HTML   PDF (257 kB)  ]    Order
	Computational and experimental studies of phase separation in pentacene:C60 mixtures Ying Zheng, Sharon K. Pregler, Jason D. Myers, Jiaomin Ouyang, Susan B. Sinnott, and Jiangeng Xue pp. 169-179 Abstract    Full Text: [ HTML Sectioned HTML   PDF (2029 kB)  ]    Order
	Stable tungsten disilicide contacts for surface and thin film resistivity measurements G. Jnawali, F.-J. Meyer zu Heringdorf, D. Wall, S. Sindermann, and M. Horn-von Hoegen pp. 180-183 Abstract    Full Text: [ HTML Sectioned HTML   PDF (311 kB)  ]    Order
	DNA directed assembly of nanoparticle linear structure for nanophotonics Baoquan Ding, Stefano Cabrini, Ronald N. Zuckermann, and Jeffrey Bokor pp. 184-187 Abstract    Full Text: [ HTML Sectioned HTML   PDF (525 kB)  ]    Order
	Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning Hyo-Sung Lee, Jung-Sub Wi, Sung-Wook Nam, Hyun-Mi Kim, and Ki-Bum Kim pp. 188-192 Abstract    Full Text: [ HTML Sectioned HTML   PDF (524 kB)  ]    Order
Brief Reports and Comments
	Electrical properties of nanotip-assisted microplasma devices Sung-O. Kim, Yang-Suk Ko, and Hal-Bon Gu pp. 193-197 Abstract    Full Text: [ HTML Sectioned HTML   PDF (663 kB)  ]    Order
Errata
	Erratum: “Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies” [J. Vac. Sci. Technol. B 26, L33 (2008)] Shriram Ramanathan, Annamalai Karthikeyan, S. A. Govindarajan, and Paul D. Kirsh p. 198 Abstract    Full Text: [ HTML Sectioned HTML   PDF (32 kB)  ]    Order
	Erratum: “Thermal conductivity of B–C–N and BN nanotubes” [J. Vac. Sci. Technol. B 23, 1883 (2005)] C. W. Chang, W. Q. Han, and Alex Zettl p. 199 Abstract    Full Text: [ HTML Sectioned HTML   PDF (28 kB)  ]    Order
PAPERS FROM THE 15TH WORKSHOP ON DIELECTRICS IN MICROELECTRONICS
	Alternative high-k dielectrics for semiconductor applications S. Van Elshocht, C. Adelmann, S. Clima, G. Pourtois, T. Conard, A. Delabie, A. Franquet, P. Lehnen, J. Meersschaut, N. Menou, M. Popovici, O. Richard, T. Schram, X. P. Wang, A. Hardy et al. pp. 209-213 Abstract    Full Text: [ HTML Sectioned HTML   PDF (312 kB)  ]    Order
	Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain Fei Gao, S. J. Lee, and D. L. Kwong pp. 214-217 Abstract    Full Text: [ HTML Sectioned HTML   PDF (283 kB)  ]    Order
	InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases K. Čičo, J. Kuzmík, J. Liday, K. Hušeková, G. Pozzovivo, J.-F. Carlin, N. Grandjean, D. Pogany, P. Vogrinčič, and K. Fröhlich pp. 218-222 Abstract    Full Text: [ HTML Sectioned HTML   PDF (418 kB)  ]    Order
	Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure M. Matsumoto, Y. Inayoshi, S. Murashige, M. Suemitsu, S. Nakajima, T. Uehara, and Y. Toyoshima pp. 223-225 Abstract    Full Text: [ HTML Sectioned HTML   PDF (320 kB)  ]    Order
	Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition Kaupo Kukli, Jaakko Niinistö, Aile Tamm, Mikko Ritala, and Markku Leskelä pp. 226-229 Abstract    Full Text: [ HTML Sectioned HTML   PDF (607 kB)  ]    Order
	Effect of annealing and electrical properties of high- thin films grown by atomic layer deposition using carboxylic acids as oxygen source E. Rauwel, F. Ducroquet, P. Rauwel, M.-G. Willinger, I. Matko, and N. Pinna pp. 230-235 Abstract    Full Text: [ HTML Sectioned HTML   PDF (275 kB)  ]    Order
	Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer K. F. Albertin and I. Pereyra pp. 236-245 Abstract    Full Text: [ HTML Sectioned HTML   PDF (1080 kB)  ]    Order
	Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal S. F. Galata, G. Mavrou, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, and A. Dimoulas pp. 246-248 Abstract    Full Text: [ HTML Sectioned HTML   PDF (372 kB)  ]    Order
	Gd silicate: A high-k dielectric compatible with high temperature annealing H. D. B. Gottlob, A. Stefani, M. Schmidt, M. C. Lemme, H. Kurz, I. Z. Mitrovic, M. Werner, W. M. Davey, S. Hall, P. R. Chalker, K. Cherkaoui, P. K. Hurley, J. Piscator, O. Engström, and S. B. Newcomb pp. 249-252 Abstract    Full Text: [ HTML Sectioned HTML   PDF (213 kB)  ]    Order
	Optimization of the AlON buffer layer for PrXOY/Si stacks K. Henkel, Y. Burkov, K. Karavaev, M. Torche, C. Schwiertz, and D. Schmeißer pp. 253-257 Abstract    Full Text: [ HTML Sectioned HTML   PDF (531 kB)  ]    Order
	Complementary metal oxide semiconductor integration of epitaxial Gd2O3 M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, M. Schmidt, H. Kurz, R. Endres, U. Schwalke, M. Czernohorkky, D. Tetzlaff, and H. J. Osten pp. 258-261 Abstract    Full Text: [ HTML Sectioned HTML   PDF (376 kB)  ]    Order
	Structure dependence of epitaxial Pr2O3/Si(001) on oxygen pressure during growth Tatsuro Watahiki, Wolfgang Braun, and Henning Riechert pp. 262-265 Abstract    Full Text: [ HTML Sectioned HTML   PDF (408 kB)  ]    Order
	Epitaxial growth of high- TiO2 rutile films on RuO2 electrodes K. Fröhlich, J. Aarik, M. apajna, A. Rosová, A. Aidla, E. Dobročka, and K. Hušková pp. 266-270 Abstract    Full Text: [ HTML Sectioned HTML   PDF (386 kB)  ]    Order
	On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111) O. Seifarth, J. Dabrowski, P. Zaumseil, S. Müller, D. Schmeißer, H.-J. Müssig, and T. Schroeder pp. 271-276 Abstract    Full Text: [ HTML Sectioned HTML   PDF (381 kB)  ]    Order
	Band offsets and work function control in field effect transistors John Robertson pp. 277-285 Abstract    Full Text: [ HTML Sectioned HTML   PDF (974 kB)  ]    Order
	Influence of the electrode material on HfO2 metal-insulator-metal capacitors Ch. Wenger, M. Lukosius, H.-J. Müssig, G. Ruhl, S. Pasko, and Ch. Lohe pp. 286-289 Abstract    Full Text: [ HTML Sectioned HTML   PDF (311 kB)  ]    Order
	Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks A. Fet, V. Häublein, A. J. Bauer, and H. Ryssel pp. 290-293 Abstract    Full Text: [ HTML Sectioned HTML   PDF (598 kB)  ]    Order
	Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics G. Lucovsky, J. P. Long, K.-B. Chung, H. Seo, B. Watts, R. Vasic, and M. D. Ulrich pp. 294-299 Abstract    Full Text: [ HTML Sectioned HTML   PDF (744 kB)  ]    Order
	HfO2/Si interface formation in atomic layer deposition films: An in situ investigation Massimo Tallarida, Konstantin Karavaev, and Dieter Schmeisser pp. 300-304 Abstract    Full Text: [ HTML Sectioned HTML   PDF (391 kB)  ]    Order
	Structure and defects of epitaxial Si(111) layers on Y2O3(111)/Si(111) support systems C. Borschel, C. Ronning, H. Hofsäss, A. Giussani, P. Zaumseil, Ch. Wenger, P. Storck, and T. Schroeder pp. 305-309 Abstract    Full Text: [ HTML Sectioned HTML   PDF (475 kB)  ]    Order
	Identification of interfacial defects in high-k gate stack films by spectroscopic ellipsometry J. Price, G. Bersuker, and P. S. Lysaght pp. 310-312 Abstract    Full Text: [ HTML Sectioned HTML   PDF (310 kB)  ]    Order
	Influence of Ar/O2 ratio on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-semiconductor capacitors fabricated by rf magnetron sputtering Trevor Pi-Chun Juan, Jong-Hong Lu, and Ming-Wei Lu pp. 313-316 Abstract    Full Text: [ HTML Sectioned HTML   PDF (623 kB)  ]    Order
	Electron paramagnetic resonance characterization of defects in HfO2 and ZrO2 powders and films R. C. Barklie and Sandra Wright pp. 317-320 Abstract    Full Text: [ HTML Sectioned HTML   PDF (326 kB)  ]    Order
	Trap related dielectric absorption of HfSiO films in metal-insulator-semiconductor structures M. Kerber, C. Fachmann, J. Heitmann, S. Kudelka, U. Schröder, and H. Reisinger pp. 321-324 Abstract    Full Text: [ HTML Sectioned HTML   PDF (412 kB)  ]    Order
	Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies E. Hildebrandt, J. Kurian, J. Zimmermann, A. Fleissner, H. von Seggern, and L. Alff pp. 325-328 Abstract    Full Text: [ HTML Sectioned HTML   PDF (172 kB)  ]    Order
	Spatial distribution of electrically active defects in dual-layer (SiO2/HfO2) gate dielectric n-type metal oxide semiconductor field effect transistors T. Nguyen, A. Savio, L. Militaru, and C. Plossu pp. 329-332 Abstract    Full Text: [ HTML Sectioned HTML   PDF (103 kB)  ]    Order
	Frequency dispersion and dielectric relaxation of La2Hf2O7 C. Z. Zhao, S. Taylor, M. Werner, P. R. Chalker, J. M. Gaskell, and A. C. Jones pp. 333-337 Abstract    Full Text: [ HTML Sectioned HTML   PDF (456 kB)  ]    Order
	Analytical modeling of tunneling current through SiO2–HfO2 stacks in metal oxide semiconductor structures J. Coignus, R. Clerc, C. Leroux, G. Reimbold, G. Ghibaudo, and F. Boulanger pp. 338-345 Abstract    Full Text: [ HTML Sectioned HTML   PDF (679 kB)  ]    Order
	Analytical modeling of the tunneling probability through the double-layer gate stacks B. Majkusiak pp. 346-351 Abstract    Full Text: [ HTML Sectioned HTML   PDF (431 kB)  ]    Order
	Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors Y. Lu, S. Hall, L. Z. Tan, I. Z. Mitrovic, W. M. Davey, B. Raeissi, O. Engström, K. Cherkaoui, S. Monaghan, P. K. Hurley, H. D. B. Gottlob, and M. C. Lemme pp. 352-355 Abstract    Full Text: [ HTML Sectioned HTML   PDF (263 kB)  ]    Order
	Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors W. Polspoel, W. Vandervorst, L. Aguilera, M. Porti, M. Nafria, and X. Aymerich pp. 356-359 Abstract    Full Text: [ HTML Sectioned HTML   PDF (634 kB)  ]    Order
	Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability L. Aguilera, M. Lanza, A. Bayerl, M. Porti, M. Nafria, and X. Aymerich pp. 360-363 Abstract    Full Text: [ HTML Sectioned HTML   PDF (300 kB)  ]    Order
	Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2−x thin films using tunneling atomic force microscopy W. Weinreich, L. Wilde, P. Kücher, M. Lemberger, V. Yanev, M. Rommel, A. J. Bauer, E. Erben, J. Heitmann, U. Schröder, and L. Oberbeck pp. 364-368 Abstract    Full Text: [ HTML Sectioned HTML   PDF (411 kB)  ]    Order
	Electrical characteristics of metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field-effect transistors Chih-Ming Lin, Wen-chieh Shih, and Joseph Ya-min Lee pp. 369-372 Abstract    Full Text: [ HTML Sectioned HTML   PDF (351 kB)  ]    Order
	Electrical properties of amorphous barium titanate films sputter deposited under hydrogen containing atmosphere F. El Kamel, P. Gonon, A. Sylvestre, and C. Vallée pp. 373-377 Abstract    Full Text: [ HTML Sectioned HTML   PDF (387 kB)  ]    Order
	Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application C. Jorel, C. Vallée, E. Gourvest, B. Pelissier, M. Kahn, M. Bonvalot, and P. Gonon pp. 378-383 Abstract    Full Text: [ HTML Sectioned HTML   PDF (431 kB)  ]    Order
	Impact of a -Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties L. Becerra, C. Merckling, M. El-Kazzi, N. Baboux, B. Vilquin, G. Saint-Girons, C. Plossu, and G. Hollinger pp. 384-388 Abstract    Full Text: [ HTML Sectioned HTML   PDF (454 kB)  ]    Order
	Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors S. Dueñas, H. Castán, H. Garcia, A. Gómez, L. Bailón, K. Kukli, J. Niinistö, M. Ritala, and M. Leskelä pp. 389-393 Abstract    Full Text: [ HTML Sectioned HTML   PDF (530 kB)  ]    Order
	Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, and Tadahiro Ohmi pp. 394-401 Abstract    Full Text: [ HTML Sectioned HTML   PDF (531 kB)  ]    Order
	Low frequency noise analysis in HfO2/SiO2 gate oxide fully depleted silicon on insulator transistors L. Zafari, J. Jomaah, G. Ghibaudo, and O. Faynot pp. 402-405 Abstract    Full Text: [ HTML Sectioned HTML   PDF (355 kB)  ]    Order
	Radiation damage on dielectrics: Single event effects Alessandro Paccagnella, Simone Gerardin, and Giorgio Cellere pp. 406-410 Abstract    Full Text: [ HTML Sectioned HTML   PDF (428 kB)  ]    Order
	High-k materials and their response to gamma ray radiation C. Z. Zhao, S. Taylor, M. Werner, P. R. Chalker, R. J. Potter, J. M. Gaskell, and A. C. Jones pp. 411-415 Abstract    Full Text: [ HTML Sectioned HTML   PDF (417 kB)  ]    Order
	Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics H. García, S. Dueñas, H. Castán, A. Gómez, L. Bailón, R. Barquero, K. Kukli, M. Ritala, and M. Leskelä pp. 416-420 Abstract    Full Text: [ HTML Sectioned HTML   PDF (387 kB)  ]    Order
	Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale M. Porti, N. Nafria, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, and G. Ghidini pp. 421-425 Abstract    Full Text: [ HTML Sectioned HTML   PDF (287 kB)  ]    Order
	Review on the reliability characterization of plasma-induced damage Andreas Martin pp. 426-434 Abstract    Full Text: [ HTML Sectioned HTML   PDF (1424 kB)  ]    Order
	Stress-induced leakage current and random telegraph signal Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Tomoyuki Suwa, Naoto Miyamoto, Shigetoshi Sugawa, and Tadahiro Ohmi pp. 435-438 Abstract    Full Text: [ HTML Sectioned HTML   PDF (698 kB)  ]    Order
	Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO2/Dy2O3 gate stacks grown on Ge (100) substrates M. S. Rahman, E. K. Evangelou, I. I. Androulidakis, A. Dimoulas, G. Mavrou, and P. Tsipas pp. 439-442 Abstract    Full Text: [ HTML Sectioned HTML   PDF (299 kB)  ]    Order
	Breakdown and degradation of ultrathin Hf-based (HfO2)x(SiO2)1−x gate oxide films H. J. Uppal, I. Z. Mitrovic, S. Hall, B. Hamilton, V. Markevich, and A. R. Peaker pp. 443-447 Abstract    Full Text: [ HTML Sectioned HTML   PDF (615 kB)  ]    Order
	Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling L. Gerrer, G. Ribes, G. Ghibaudo, and J. Jomaah pp. 448-452 Abstract    Full Text: [ HTML Sectioned HTML   PDF (802 kB)  ]    Order
	Progressive degradation of TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress J. M. Rafí, E. Simoen, A. Mercha, N. Collaert, F. Campabadal, and C. Claeys pp. 453-458 Abstract    Full Text: [ HTML Sectioned HTML   PDF (770 kB)  ]    Order
	Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, and G. Groeseneken pp. 459-462 Abstract    Full Text: [ HTML Sectioned HTML   PDF (517 kB)  ]    Order
	Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors M. Aoulaiche, B. Kaczer, Ph. J. Roussel, R. O'Connor, M. Houssa, S. De Gendt, H. E. Maes, and G. Groeseneken pp. 463-467 Abstract    Full Text: [ HTML Sectioned HTML   PDF (563 kB)  ]    Order
	Hot carrier degradation in HfSiON/TiN fin shaped field effect transistor with different substrate orientations Chadwin D. Young, Ji-Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, and Hsing-Huang Tseng pp. 468-471 Abstract    Full Text: [ HTML Sectioned HTML   PDF (716 kB)  ]    Order
	SiO2 interfacial layer as the origin of the breakdown of high-k dielectrics stacks M. Rafik, G. Ribes, D. Roy, and G. Ghibaudd pp. 472-475 Abstract    Full Text: [ HTML Sectioned HTML   PDF (395 kB)  ]    Order
	Al2O3–SiO2 stack with enhanced reliability M. Lisiansky, A. Fenigstein, A. Heiman, Y. Raskin, Y. Roizin, L. Bartholomew, J. Owyang, A. Gladkikh, R. Brener, I. Geppert, E. Lyakin, B. Meyler, Y. Shnieder, S. Yofis, and M. Eizenberg pp. 476-481 Abstract    Full Text: [ HTML Sectioned HTML   PDF (865 kB)  ]    Order
	Suppression of parasitic electron injection in silicon-oxide-nitride-oxide-silicon-type memory cells using high-k capping layers T. Erlbacher, T. Graf, N. DasGupta, A. J. Bauer, and H. Ryssel pp. 482-485 Abstract    Full Text: [ HTML Sectioned HTML   PDF (403 kB)  ]    Order
	Contact etch stop a-SixNy:H layer: A key factor for single polysilicon flash memory data retention G. Beylier, D. Benoit, P. Mora, S. Bruyère, and G. Ghibaudo pp. 486-489 Abstract    Full Text: [ HTML Sectioned HTML   PDF (336 kB)  ]    Order
	On the impact of silicon nitride technology on charge trap NAND memories A. Sebastiani, C. Scozzari, A. Mauri, A. Modelli, G. Albini, R. Piagge, P. Bacciaglia, A. Del Vitto, M. Alessandri, A. Grossi, P. Tessariol, and G. Ghidini pp. 490-493 Abstract    Full Text: [ HTML Sectioned HTML   PDF (443 kB)  ]    Order
	Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices Robert Mroczyński and Romuald B. Beck pp. 494-497 Abstract    Full Text: [ HTML Sectioned HTML   PDF (437 kB)  ]    Order
	Ferroelectric nanostructures Ionela Vrejoiu, Marin Alexe, Dietrich Hesse, and Ulrich Gösele pp. 498-503 Abstract    Full Text: [ HTML Sectioned HTML   PDF (681 kB)  ]    Order
	Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications K. Henkel, I. Lazareva, D. Mandal, I. Paloumpa, K. Müller, Y. Koval, P. Müller, and D. Schmeißer pp. 504-507 Abstract    Full Text: [ HTML Sectioned HTML   PDF (394 kB)  ]    Order
	Interface states formation in a localized charge trapping nonvolatile memory device Asia Shapira, Yael Shur, Yosi Shacham-Diamand, Assaf Shappir, and Boaz Eitan pp. 508-511 Abstract    Full Text: [ HTML Sectioned HTML   PDF (189 kB)  ]    Order
	Peculiar characteristics of nanocrystal memory cells programming window Alberto Gasperin, Esteve Amat, Javier Martin, Marc Porti, Montserrat Nafria, and Alessandro Paccagnella pp. 512-516 Abstract    Full Text: [ HTML Sectioned HTML   PDF (523 kB)  ]    Order
	Low-k dielectrics for trench isolation in nanoscaled complementary metal oxide semiconductor imagers F. Irrera, G. Puzzilli, L. Ricci, F. Russo, and F. Stirpe pp. 517-520 Abstract    Full Text: [ HTML Sectioned HTML   PDF (357 kB)  ]    Order
	Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low- SiOCH dielectric using chemometric methods Thomas Oszinda, Volkhard Beyer, Matthias Schaller, Daniel Fischer, Christin Bartsch, and Stefan E. Schulz pp. 521-526 Abstract    Full Text: [ HTML Sectioned HTML   PDF (680 kB)  ]    Order
	Study on the characteristics of toluene-tetraethoxysilane hybrid plasma-polymer thin films S.-J. Cho, I.-S. Bae, S. Lee, D. Jung, W. S. Choi, and J.-H. Boo pp. 527-530 Abstract    Full Text: [ HTML Sectioned HTML   PDF (382 kB)  ]    Order
	Photoluminescence from high-pressure-annealed silicon dioxide C. K. Wong, A. Misiuk, Hei Wong, and A. Panas pp. 531-534 Abstract    Full Text: [ HTML Sectioned HTML   PDF (514 kB)  ]    Order
	Light emission and photoluminescence from high-k dielectrics containing Ge nanocrystals Shu-Tong Chang and Shu-Hui Liao pp. 535-537 Abstract    Full Text: [ HTML Sectioned HTML   PDF (337 kB)  ]    Order
	Gas sensing materials based on TiO2 thin films Nicoleta Iftimie, D. Luca, Felicia Lacomi, Mihaela Girtan, and Diana Mardare pp. 538-541 Abstract    Full Text: [ HTML Sectioned HTML   PDF (241 kB)  ]    Order
	Mechanical properties of anodic aluminum oxide for microelectromechanical system applications L. Moreno-Hagelsieb, D. Flandre, and J.-P. Raskin pp. 542-546 Abstract    Full Text: [ HTML Sectioned HTML   PDF (437 kB)  ]    Order
	Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta, A. Yoshigoe, and Y. Teraoka pp. 547-550 Abstract    Full Text: [ HTML Sectioned HTML   PDF (501 kB)  ]    Order

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