ScienceDirect Alert: Solid-State Electronics, Vol. 52, Iss. 11, 2008

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Solid-State Electronics Volume 52, Issue 11,  Pages 1687-1838 (November 2008)

1.

Editorial Board Page IFC

Letters

2.

Structural and optical properties of ZrB2 and HfxZr1−xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates Pages 1687-1690 R. Roucka, Y.-J. An, A.V.G. Chizmeshya, V.R. D’Costa, J. Tolle, J. Menéndez and J. Kouvetakis

3.

A poly-Si AMOLED display with high uniformity Pages 1691-1693 KeeChan Park, Jae-Hong Jeon, YoungIl Kim, Jae Beom Choi, Young-Jin Chang, ZhiFeng Zhan and ChiWoo Kim

Regular Papers

4.

Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology Pages 1694-1702 Shin-ichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Kunihiro Sakamoto, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike and Eiichi Suzuki

5.

Transport boundary condition for semiconductor structures Pages 1703-1709 I.N. Volovichev, J.E. Velázquez-Perez and Yu.G. Gurevich

6.

Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(1 0 0) Si substrates Pages 1710-1716 Soumya Krishnamoorthy and Agis A. Iliadis

7.

Study the effect of distribution of density of states on the depletion width of organic Schottky contacts Pages 1717-1721 Arash Takshi, Milad Mohammadi and John D. Madden

8.

Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations Pages 1722-1729 Michaela Weidemann, Alexander Kloes and Benjamin Iñiguez

9.

RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements Pages 1730-1734 H. Contopanagos, F. Zacharatos and A.G. Nassiopoulou

10.

A parasitic resistance measurement method exploiting gate current–density characteristics in ultra-short Schottky-gate FETs Pages 1735-1741 Takashi Inoue and Walter Contrata

11.

An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters Pages 1742-1750 A. Oudir, M. Mahdouani, R. Bourguiga, F. Pardo and J.L. Pelouard

12.

Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs Pages 1751-1754 Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen and Cor Claeys

13.

Unified tunnelling-diffusion theory for Schottky and very thin MOS structures Pages 1755-1765 J. Racko, P. Valent, P. Benko, D. Donoval, L. Harmatha, P. Pinteš and J. Breza

14.

A new approach for physical-based modelling of bipolar power semiconductor devices Pages 1766-1772 R. Chibante, A. Araújo and A. Carvalho

15.

A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET Pages 1773-1777 Gang Zhang, Won Jong Yoo and Chung Ho Ling

16.

A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface Pages 1778-1781 G. Song, M.Y. Ali and M. Tao

17.

Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate Pages 1782-1790 Yong Zhang, Cheng Li, Song-Yan Chen, Hong-Kai Lai and Jun-Yong Kang

18.

Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study Pages 1791-1795 S. Vitanov and V. Palankovski

19.

Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation Pages 1796-1801 Enrico Furno, Francesco Bertazzi, Michele Goano, Giovanni Ghione and Enrico Bellotti

20.

Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Pages 1802-1805 Michael E. Levinshtein, Pavel A. Ivanov, Tigran T. Mnatsakanov, John W. Palmour, Mrinal K. Das and Brett A. Hull

21.

Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer Pages 1806-1809 Fujun Zhang, Zheng Xu, Suling Zhao, Liwei Wang and Lifang Lu

22.

A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes Pages 1810-1814 Yanli Zhang and Marvin H. White

23.

Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs Pages 1815-1820 Chi-Woo Lee, Dimitri Lederer, Aryan Afzalian, Ran Yan, Nima Dehdashti, Weize Xiong and Jean-Pierre Colinge

24.

Long-wave (10 μm) infrared light emitting diode device performance Pages 1821-1824 Naresh C. Das, John Bradshaw, Fred Towner and R. Leavitt

25.

Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz Pages 1825-1828 Z. Jin, Y. Su, W. Cheng, X. Liu, A. Xu and M. Qi

26.

InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material Pages 1829-1832 James G. Champlain, Richard Magno, Mario Ancona, Harvey S. Newman and J. Brad Boos

27.

Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition Pages 1833-1836 Yiqun Shen, Ning Xu, Wei Hu, Xiaofeng Xu, Jian Sun, Zhifeng Ying and Jiada Wu

Errata

28.

Corrigendum to “An analytical channel thermal noise model for deep sub-micron MOSFETs with short channel effects” [Solid State Electronics 51(7) (2007) 1034–1038] Page 1837 Jongwook Jeon, Jong Duk Lee, Byung-Gook Park and Hyungcheol Shin

29.

Erratum to “Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory” [Solid State Electronics 52(9) (2008) 1452–1459] Page 1838 S. Jacob, B. De Salvo, L. Perniola, G. Festes, S. Bodnar, R. Coppard, J.F. Thiery, T. Pate-Cazal, C. Bongiorno, S. Lombardo, J. Dufourcq, E. Jalaguier, T. Pedron, F. Boulanger and S. Deleonibus

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