ScienceDirect Alert: Solid-State Electronics, Vol. 52, Iss. 10, 2008

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 52, Issue 10,  Pages 1473-1686 (October 2008) Papers Selected from the International Semiconductor Device Research Symposium 2007 – ISDRS 2007 Edited by Agis A. Iliadis and Curt A. Richter

1.

Editorial Board Page IFC

2.

Foreword Page 1473 Agis A. Iliadis and Curt Richter

3.

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Pages 1474-1481 Quentin Rafhay, Raphaël Clerc, Gérard Ghibaudo and Georges Pananakakis

4.

Design and optimization of the SOI field effect diode (FED) for ESD protection Pages 1482-1485 Yang Yang, Akram A. Salman, Dimitris E. Ioannou and Stephen G. Beebe

5.

Capacitance modeling of short-channel double-gate MOSFETs Pages 1486-1490 Håkon Børli, Sigbjørn Kolberg and Tor A. Fjeldly

6.

Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices Pages 1491-1497 Gan Wang and Marvin H. White

7.

Fabrication and characterization of fin SONOS flash memory with separated double-gate structure Pages 1498-1504 Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Sangwoo Kang, Dong-Hua Lee, Seongjae Cho, Doo-Hyun Kim, Gil Sung Lee, Won-Bo Sim, Younghwan Son, Hyungcheol Shin, Jong Duk Lee and Byung-Gook Park

8.

Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model Pages 1505-1511 B. Sviličić, V. Jovanović and T. Suligoj

9.

Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks Pages 1512-1517 Chung-Hao Fu, Po-Yen Chien, Kuei-Shu Chang-Liao, Tien-Ko Wang and Wen-Fa Wu

10.

Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer Pages 1518-1524 Tzu-I Tsai, Horng-Chih Lin, Yao-Jen Lee, King-Sheng Chen, Jeff Wang, Fu-Kuo Hsueh, Tien-Sheng Chao and Tiao-Yuan Huang

11.

New EEPROM concept for single bit operation Pages 1525-1529 J.R. Raguet, R. Laffont, R. Bouchakour, V. Bidal, A. Regnier and J.M. Mirabel

12.

Characterization of CoxNiyO hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices Pages 1530-1535 Chin-Lung Cheng, Chien-Wei Liu, Kuei-Shu Chang-Liao, Ping-Hung Tsai, Jin-Tsong Jeng, Sung-Wei Huang and Bau-Tong Dai

13.

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory Pages 1536-1541 Akeed A. Pavel, Mehjabeen A. Khan, Phumin Kirawanich and N.E. Islam

14.

Sensitivity of static noise margins to random dopant variations in 6-T SRAM cells Pages 1542-1549 Liviu Oniciuc and Petru Andrei

15.

An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test Pages 1550-1554 C. Le Roux, L. Lopez, A. Firiti, J.L. Ogier, F. Lalande, R. Laffont and G. Micolau

16.

Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells Pages 1555-1562 Esau Kanyogoro, Martin Peckerar, Harold Hughes and Mike Liu

17.

Two-band k · p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility Pages 1563-1568 V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina and S. Selberherr

18.

The role of carbon on performance of strained-Si:C surface channel NMOSFETs Pages 1569-1572 M.H. Lee, S.T. Chang, S. Maikap and C.-F. Huang

19.

Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers Pages 1573-1577 Ping-Hung Tsai, Kuei-Shu Chang-Liao, Tai-Yu Wu, Tien-Ko Wang, Pei-Jer Tzeng, Cha-Hsin Lin, Lung-Sheng Lee and Ming-Jin Tsai

20.

NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications Pages 1578-1583 Weon Wi Jang, Jun-Bo Yoon, Min-Sang Kim, Ji-Myoung Lee, Sung-Min Kim, Eun-Jung Yoon, Keun Hwi Cho, Sung-Young Lee, In-Hyuk Choi, Dong-Won Kim and Donggun Park

21.

Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors Pages 1584-1588 Ching-Sen Lu, Horng-Chih Lin and Tiao-Yuan Huang

22.

Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference Pages 1589-1593 Kyechong Kim and Agis A. Iliadis

23.

Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil Pages 1594-1601 Abbas Jamshidi-Roudbari, Po-Chin Kuo and Miltiadis Hatalis

24.

High-speed thermal analysis of high power diode arrays Pages 1602-1605 N. Rada, G. Triplett, S. Graham and S. Kovaleski

25.

A 2D non-parabolic six-moments model Pages 1606-1609 M. Vasicek, J. Cervenka, M. Wagner, M. Karner and T. Grasser

26.

Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency Pages 1610-1614 Ruchika Aggarwal, Anju Agrawal, Mridula Gupta and R.S. Gupta

27.

Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric Pages 1615-1618 C.P. Chen, T.D. Lin, Y.J. Lee, Y.C. Chang, M. Hong and J. Kwo

28.

Auxiliary components for kilopixel transition edge sensor arrays Pages 1619-1624 Ari-David Brown, David Chuss, Vilem Mikula, Ross Henry, Edward Wollack, Yue Zhao, Gene C. Hilton and James A. Chervenak

29.

Modeling and design of a monolithically integrated power converter on SiC Pages 1625-1630 L.C. Yu, K. Sheng and J.H. Zhao

30.

Challenges in SiC power MOSFET design Pages 1631-1635 Kevin Matocha

31.

Demonstration of the first SiC power integrated circuit Pages 1636-1646 Kuang Sheng, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, Petre Alexandrov and Leonid Fursin

32.

Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio Pages 1647-1651 Rocco J. Parro, Maximilian C. Scardelletti, Nicholas C. Varaljay, Sloan Zimmerman and Christian A. Zorman

33.

Proton-induced SEU in SiGe digital logic at cryogenic temperatures Pages 1652-1659 Akil. K. Sutton, Kurt Moen, John D. Cressler, Martin A. Carts, Paul W. Marshall, Jonathan A. Pellish, Vishwa Ramachandran, Robert A. Reed, Michael L. Alles and Guofu Niu

34.

Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers Pages 1660-1668 A.T. Pham, C. Jungemann, M. Klawitter and B. Meinerzhagen

35.

Tuning nonlinear susceptibility in strained AlGaAs/InGaAs quantum cascade lasers Pages 1669-1673 Denzil Roberts and Gregory Triplett

36.

Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots Pages 1674-1679 Dae-Seob Han and Levon V. Asryan

37.

An empirical study of dynamic properties of an individual carbon nanotube electron source system Pages 1680-1686 Bryan P. Ribaya, Darrell L. Niemann, Joseph Makarewicz, Norman G. Gunther, Cattien V. Nguyen and Mahmud Rahman

Send my e-mail in plain text format

Modify or Remove My Alerts

Access the ScienceDirect Info site if you have questions about this message or other features of this service.

This email has been sent to you by ScienceDirect, a division of Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The Netherlands, Tel.+31 20 485 3911. ScienceDirect respects your privacy and does not disclose, rent or sell your personal information to any non-affiliated third parties without your consent, except as may be stated in the ScienceDirect online privacy policy. By using email or alert services, you agree to comply with the ScienceDirect Terms and Conditions. To unsubscribe to alert services, please go to the Alerts page. Copyright © 2008 ScienceDirect. All rights reserved. Any unauthorized use, reproduction, or transfer of this message or its contents, in any medium, is strictly prohibited. ScienceDirect® is a registered trademark of Elsevier B.V. Delivery Job ID: 1929:171879516:1927:146887362