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Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Journal of Vacuum Society and Technology B

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures -- July 2008

Volume 26, Issue 4 , pp. L33-1631

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  • Letters
  • Review Article
  • Regular Articles
  • Brief Reports and Comments
  • Shop Notes
  • Errata
  • PAPERS FROM THE 35th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES
  • PAPERS FROM THE SECOND INTERNATIONAL CONFERENCE ON ONE-DIMENSIONAL NANOMATERIALS

    • Letters
  • Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies
    S. Ramanathan, A. Karthikeyan, S. A. Govindarajan, and P. D. Kirsch
    pp. L33-L35
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (241 kB)  GZipped PS   ]    Order

  • Ion beam synthesis of Ni nanoparticles embedded in quartz
    P. Kumar, Ravi Kumar, D. Kanjilal, M. Knobel, P. Thakur, and K. H. Chae
    pp. L36-L40
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (938 kB)  GZipped PS   ]    Order

    • Review Article
  • Gas-assisted focused electron beam and ion beam processing and fabrication
    Ivo Utke, Patrik Hoffmann, and John Melngailis
    pp. 1197-1276
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (5770 kB)  GZipped PS   ]    Order

    • Regular Articles
  • Structural and electrical properties of Bi1.5Mg1.0Nb1.5O7 thin films deposited on Pt/TiO2/SiO2/Si substrates by rf-magnetron sputtering
    Jun-Ku Ahn, Nguyen Duy Cuong, Soon-Gil Yoon, and Chang-Soo Kim
    pp. 1277-1280
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (275 kB)  GZipped PS   ]    Order

  • Surface roughness generated by plasma etching processes of silicon
    M. Martin and G. Cunge
    pp. 1281-1288
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (536 kB)  GZipped PS   ]    Order

  • System-level line-edge roughness limits in extreme ultraviolet lithography
    Patrick P. Naulleau, Dimitra Niakoula, and Guojing Zhang
    pp. 1289-1293
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (350 kB)  GZipped PS   ]    Order

  • Highly reliable growth process of carbon nanowalls using radical injection plasma-enhanced chemical vapor deposition
    Shingo Kondo, Masaru Hori, Koji Yamakawa, Shoji Den, Hiroyuki Kano, and Mineo Hiramatsu
    pp. 1294-1300
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (725 kB)  GZipped PS   ]    Order

  • Metal-containing release layers for use with UV-cure nanoimprint lithographic template materials
    F. A. Houle, S. Raoux, D. C. Miller, C. Jahnes, and S. Rossnagel
    pp. 1301-1304
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (85 kB)  GZipped PS   ]    Order

  • Stable field emission from screen-printed ZnO-tetrapod emitters
    Kai Hou, Chi Li, Wei Lei, Xiaobing Zhang, Ke Qu, Xiaxi Yang, Zhiwei Zhao, and Baoping Wang
    pp. 1305-1308
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (447 kB)  GZipped PS   ]    Order

  • Conformal filling of silicon micropillar platform with 10boron
    N. Deo, J. R. Brewer, C. E. Reinhardt, R. J. Nikolić, and C. L. Cheung
    pp. 1309-1314
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (749 kB)  GZipped PS   ]    Order

  • Synthesis and characterization of TiO2–Ge nanocomposites
    Amita Goyal, Abdul K. Rumaiz, Y. Miao, Sukti Hazra, C. Ni, and S. Ismat Shah
    pp. 1315-1320
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (250 kB)  GZipped PS   ]    Order

  • Preparation and field emission property of nanodiamond-cluster-embedded diamondlike carbon film
    W. G. Xie, Jian Chen, W. W. Ming, Jun Chen, J. Zhou, S. Z. Deng, and N. S. Xu
    pp. 1321-1325
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (592 kB)  GZipped PS   ]    Order

  • Smooth sidewall in InP-based photonic crystal membrane etched by N2-based inductively coupled plasma
    K. H. Lee, S. Guilet, G. Patriarche, I. Sagnes, and A. Talneau
    pp. 1326-1333
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (586 kB)  GZipped PS   ]    Order

  • Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications
    Sung-Gi Hur, Eui-Tae Kim, Ji-Hong Lee, Geun-Hong Kim, and Soon-Gil Yoon
    pp. 1334-1337
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (433 kB)  GZipped PS   ]    Order

  • Interfacial and electrical properties of ZrxTi1−xO4 (x=0.66) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-k gate dielectric
    B. S. Sahu, S. V. N. Pammi, Nak-Jin Seong, and Soon-Gil Yoon
    pp. 1338-1343
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (583 kB)  GZipped PS   ]    Order

  • Metal nanoparticle embedded porous thin films prepared by oblique angle coevaporation
    R. Blackwell and Y.-P. Zhao
    pp. 1344-1349
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (728 kB)  GZipped PS   ]    Order

  • Optical and photocatalytic properties of oblique angle deposited TiO2 nanorod array
    Y. P. He, Z. Y. Zhang, and Y. P. Zhao
    pp. 1350-1358
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (523 kB)  GZipped PS   ]    Order

  • Ti/Ni bilayer Ohmic contact on 4H-SiC
    Takasumi Ohyanagi, Yasuo Onose, and Atsuo Watanabe
    pp. 1359-1362
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (173 kB)  GZipped PS   ]    Order

  • A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application
    Jongseok Kim, Sangwook Kwon, Youngteak Hong, Insang Song, and Byeongkwon Ju
    pp. 1363-1367
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (540 kB)  GZipped PS   ]    Order

  • Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density
    D. J. Ewing, M. A. Derenge, P. B. Shah, U. Lee, T. S. Zheleva, and K. A. Jones
    pp. 1368-1372
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (588 kB)  GZipped PS   ]    Order

  • Etching rate, optical transmittance, and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by rf magnetron cosputtering
    Shunji Nakata, Shingo Nagai, Minoru Kumeda, Takeshi Kawae, Akiharu Morimoto, and Tatsuo Shimizu
    pp. 1373-1378
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (441 kB)  GZipped PS   ]    Order

  • Flexible organic light-emitting diodes with improved performance by insertion of an UV-sensitive layer
    Lin Hui, Yu Junsheng, Wang Nana, Huang Chunhua, and Jiang Yadong
    pp. 1379-1381
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (294 kB)  GZipped PS   ]    Order

  • Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia
    C. D'Emic, J. Newbury, C. Scerbo, M. Copel, and M. Gordon
    pp. 1382-1389
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (762 kB)  GZipped PS   ]    Order

  • Direct UV-imprint lithography using conductive nanofiller-dispersed UV-curable resin
    Jun-Hyuk Choi, Soon-Won Lee, Dae-Geun Choi, Ki-Don Kim, Jun-Ho Jeong, and Eung-Suk Lee
    pp. 1390-1394
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (567 kB)  GZipped PS   ]    Order

  • X-ray photoelectron spectroscopy and low-energy electron diffraction analyses on the extremely low work-function surface of W(100) modified by yttrium oxide
    Takashi Kawakubo, Yusuke Shimoyama, Hideaki Nakane, and Hiroshi Adachi
    pp. 1395-1397
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (301 kB)  GZipped PS   ]    Order

  • Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions
    X. L. Tong, D. S. Jiang, L. Liu, and H. Dai
    pp. 1398-1403
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (424 kB)  GZipped PS   ]    Order

  • Spherical field emission cathode based on carbon nanotube paste and its application in luminescent bulbs
    Weiqi Fu, Peng Liu, Jie Tang, Liang Liu, and Shoushan Fan
    pp. 1404-1406
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (310 kB)  GZipped PS   ]    Order

  • A study of patterning and annealing effects on the performance of magnetic planar inductor
    Hongfang Sun, Zewen Liu, Jiahao Zhao, Li Wang, and Jing Zhu
    pp. 1407-1411
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (614 kB)  GZipped PS   ]    Order

  • High sensitivity cantilevers for measuring persistent currents in normal metal rings
    A. C. Bleszynski-Jayich, W. E. Shanks, B. R. Ilic, and J. G. E. Harris
    pp. 1412-1416
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (212 kB)  GZipped PS   ]    Order

  • Effect of contact metals on the piezoelectric properties of aluminum nitride thin films
    J. Harman, A. Kabulski, V. R. Pagán, P. Famouri, K. R. Kasarla, L. E. Rodak, J. Peter Hensel, and D. Korakakis
    pp. 1417-1419
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (180 kB)  GZipped PS   ]    Order

  • Electrical characteristics of Pt/Au Schottky contacts to plasma-etched AlGaN
    A. A. Syed, X. A. Cao, A. A. Woodworth, and C. D. Stinespring
    pp. 1420-1424
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (562 kB)  GZipped PS   ]    Order

  • Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles
    Yugo Osano and Kouichi Ono
    pp. 1425-1439
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (2048 kB)  GZipped PS   ]    Order

    • Brief Reports and Comments
  • Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices
    V. Bliznetsov, N. Singh, R. Kumar, N. Balasubramanian, P. Guo, S. J. Lee, and Y. Cai
    pp. 1440-1444
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (596 kB)  GZipped PS   ]    Order

    • Shop Notes
  • Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
    L. Aguilera, W. Polspoel, A. Volodin, C. Van Haesendonck, M. Porti, W. Vandervorst, M. Nafria, and X. Aymerich
    pp. 1445-1449
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (493 kB)  GZipped PS   ]    Order

    • Errata
  • Erratum: “Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition” [J. Vac. Sci. Technol. B 26, L1 (2008)]
    Jung Hyeun Kim
    p. 1450
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (26 kB)  GZipped PS   ]    Order

    • PAPERS FROM THE 35th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES


    Organics
    [ Next Subject | Issue Index | Top / Bottom of Page]

  • Interfacial effects in thin films of polymeric semiconductors
    Jonathan Rivnay, Leslie H. Jimison, Michael F. Toney, Michael Preiner, Nicholas A. Melosh, and Alberto Salleo
    pp. 1454-1460
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (451 kB)  GZipped PS   ]    Order

  • Single molecule measurements with photoelectron emission microscopy
    Xianhua Kong, J. E. Rowe, and R. J. Nemanich
    pp. 1461-1465
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (333 kB)  GZipped PS   ]    Order

    • Complex Oxides
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3
    Jun Zhang, S. Walsh, C. Brooks, D. G. Schlom, and L. J. Brillson
    pp. 1466-1471
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (690 kB)  GZipped PS   ]    Order

    • Oxide Semiconductors
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors
    Yeon-Keon Moon, Dae-Yong Moon, Sih Lee, Sang-Ho Lee, Jong-Wan Park, and Chang-Oh Jeong
    pp. 1472-1476
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (429 kB)  GZipped PS   ]    Order

  • Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces
    D. R. Doutt, C. Zgrabik, H. L. Mosbacker, and L. J. Brillson
    pp. 1477-1482
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (731 kB)  GZipped PS   ]    Order

    • Characterization of Quantum Structures
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Theory of electron tunneling through a scanning tunneling microscopy-tip/quantum dot junction
    David M.-T. Kuo and Yia-Chung Chang
    pp. 1483-1487
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (278 kB)  GZipped PS   ]    Order

  • Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy
    A. M. Burke, N. Aoki, R. Akis, Y. Ochiai, and D. K. Ferry
    pp. 1488-1491
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (290 kB)  GZipped PS   ]    Order

  • Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures
    R. Timm, A. Lenz, H. Eisele, L. Ivanova, M. Dähne, G. Balakrishnan, D. L. Huffaker, I. Farrer, and D. A. Ritchie
    pp. 1492-1503
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (613 kB)  GZipped PS   ]    Order

    • Strain Phenomena
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions
    B. L. VanMil, R. E. Stahlbush, R. L. Myers-Ward, K.-K. Lew, C. R. Eddy, Jr., and D. K. Gaskill
    pp. 1504-1507
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (272 kB)  GZipped PS   ]    Order

    • Carrier Dynamics
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Interaction of microwaves with photoelectrons in semiconductors
    R. K. Ahrenkiel and S. W. Johnston
    pp. 1508-1515
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (677 kB)  GZipped PS   ]    Order

    • III-V Surfaces
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • As-rich InAs(001)-(2×4) phases investigated by in situ surface x-ray diffraction
    B. P. Tinkham, W. Braun, K. H. Ploog, M. Takahasi, J. Mizuki, and F. Grosse
    pp. 1516-1520
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (344 kB)  GZipped PS   ]    Order

    • Magnetic Tunnel Junctions
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Interface structure and transport of complex oxide junctions
    B. B. Nelson-Cheeseman, F. Wong, R. V. Chopdekar, M. Chi, E. Arenholz, N. D. Browning, and Y. Suzuki
    pp. 1521-1525
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (375 kB)  GZipped PS   ]    Order

    • Spintronics
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Magnetocapacitance effect in InMnAs/InAs p-n heterojunctions
    N. Rangaraju and B. W. Wessels
    pp. 1526-1529
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (160 kB)  GZipped PS   ]    Order

  • Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)
    M. Moreno, A. Kumar, M. Tallarida, A. Ney, K. H. Ploog, and K. Horn
    pp. 1530-1533
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (298 kB)  GZipped PS   ]    Order

    • Nanostructures
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Surface bonding effects in compound semiconductor nanoparticles: II
    H. H. Farrell
    pp. 1534-1541
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (1112 kB)  GZipped PS   ]    Order

    • Nitride Semiconductors
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Steady state and transient behavior of currents in AlGaN/GaN planar Schottky diodes and mechanism of current collapse
    Hideki Hasegawa and Masamichi Akazawa
    pp. 1542-1550
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (787 kB)  GZipped PS   ]    Order

  • Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
    A. Yoshikawa, S. B. Che, N. Hashimoto, H. Saito, Y. Ishitani, and X. Q. Wang
    pp. 1551-1559
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (736 kB)  GZipped PS   ]    Order

    • Integration
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate
    D. Liang and J. E. Bowers
    pp. 1560-1568
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (796 kB)  GZipped PS   ]    Order

    • III-V MOS Structures
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer
    Masamichi Akazawa and Hideki Hasegawa
    pp. 1569-1578
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (345 kB)  GZipped PS   ]    Order

    • Oxides on Si
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Atomic scale dielectric constant near the SiO2/Si(001) interface
    Sadakazu Wakui, Jun Nakamura, and Akiko Natori
    pp. 1579-1584
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (304 kB)  GZipped PS   ]    Order

  • Optimum ambient N2 pressure during HfAlO pulsed-laser deposition in Pt/SBT/HfAlO/Si field effect transistors
    M. Takahashi, T. Horiuchi, S. Wang, Q.-H. Li, and S. Sakai
    pp. 1585-1587
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (345 kB)  GZipped PS   ]    Order

  • Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition
    Woong-Sun Kim, Tae-Sub Kim, Byung-Woo Kang, Myoung-Gyun Ko, Sang-Kyun Park, and Jong-Wan Park
    pp. 1588-1591
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (507 kB)  GZipped PS   ]    Order

    • Nanoscale Contacts
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires
    S. M. Woodruff, N. S. Dellas, B. Z. Liu, S. M. Eichfeld, T. S. Mayer, J. M. Redwing, and S. E. Mohney
    pp. 1592-1596
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (331 kB)  GZipped PS   ]    Order

  • Au/Ag and Au/Pd molecular contacts to GaAs
    Azadeh Ahktari-Zavareh, Wenjie Li, Karen L. Kavanagh, Aaron J. Trionfi, Jason C. Jones, John L. Reno, Julia W. P. Hsu, and A. Alec Talin
    pp. 1597-1601
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (285 kB)  GZipped PS   ]    Order

    • PAPERS FROM THE SECOND INTERNATIONAL CONFERENCE ON ONE-DIMENSIONAL NANOMATERIALS
  • Atomic force microscopy and scanning tunneling microscopy-spectroscopy characterization of ZnO nanobelts
    T. G. G. Maffeïs, M. W. Penny, M. R. Brown, K. W. Liew, D. Fu, N. Tsolakoglou, C. J. Wright, and S. P. Wilks
    pp. 1606-1608
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (221 kB)  GZipped PS   ]    Order

  • Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires
    T. Sand-Jespersen, M. Aagesen, C. B. Sørensen, P. E. Lindelof, and J. Nygård
    pp. 1609-1612
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (346 kB)  GZipped PS   ]    Order

  • Other one-dimensional systems and thermal properties
    M. S. Dresselhaus, G. Dresselhaus, and Mario Hofmann
    pp. 1613-1618
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (472 kB)  GZipped PS   ]    Order

  • Surface bound organic nanowires
    Frank Balzer, Manuela Schiek, Horst-Günter Rubahn, Katharina Al-Shamery, and Arne Lützen
    pp. 1619-1623
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (562 kB)  GZipped PS   ]    Order

  • Generation of dc spin current in a narrow channel with Rashba and Dresselhaus spin-orbit interactions
    Chi-Shung Tang, Wen-Hsuan Kuan, Wen Xu, and Yia-Chung Chang
    pp. 1624-1627
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (274 kB)  GZipped PS   ]    Order

  • Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors
    Raseong Kim, Neophytos Neophytou, Abhijeet Paul, Gerhard Klimeck, and Mark S. Lundstrom
    pp. 1628-1631
    Abstract    Full Text: [ HTML Sectioned HTML   PDF (456 kB)  GZipped PS   ]    Order

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    The above Table of Contents is for individual, noncommercial uses only. A limited license is granted to individuals to print or electronically store this document on their personal computer or workstation. Redistribution beyond person-to-person exchanges requires consent from the Journal of Vacuum Society and Technology B (web@jvstb.org).
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