| Solid-State Electronics Volume 52, Issue 9, Pages 1265-1472 (September 2008) Papers Selected from the 37th European Solid-State Device Research Conference - ESSDERC’07 Edited by Jurriaan Schmitz and Roland Thewes | | 6. | 105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers Pages 1285-1290 C. Le Royer, L. Clavelier, C. Tabone, K. Romanjek, C. Deguet, L. Sanchez, J.-M. Hartmann, M.-C. Roure, H. Grampeix, S. Soliveres, G. Le Carval, R. Truche, A. Pouydebasque, M. Vinet and S. Deleonibus | | | 7. | Multi-gate devices for the 32 nm technology node and beyond Pages 1291-1296 N. Collaert, A. De Keersgieter, A. Dixit, I. Ferain, L.-S. Lai, D. Lenoble, A. Mercha, A. Nackaerts, B.J. Pawlak, R. Rooyackers, T. Schulz, K.T. San, N.J. Son, M.J.H. Van Dal, P. Verheyen, K. von Arnim, L. Witters, K. De Meyer, S. Biesemans and M. Jurczak | | | 9. | Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack Pages 1303-1311 A. Veloso, H.Y. Yu, A. Lauwers, S.Z. Chang, C. Adelmann, B. Onsia, M. Demand, S. Brus, C. Vrancken, R. Singanamalla, P. Lehnen, J. Kittl, T. Kauerauf, R. Vos, B.J. O′Sullivan, S. Van Elshocht, R. Mitsuhashi, G. Whittemore, K.M. Yin, M. Niwa, T. Hoffmann, P. Absil, M. Jurczak and S. Biesemans | | | 30. | Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory Pages 1452-1459 S. Jacob, B. De Salvo, L. Perniola, G. Festes, S. Bodnar, R. Coppard, J.F. Thiery, T. Pate-Cazal, C. Bongiorno, S. Lombardo, J. Dufourcq, E. Jalaguier, T. Pedron, F. Boulanger and S. Deleonibus | | | 32. | Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond Pages 1467-1472 A. Pirovano, F. Pellizzer, I. Tortorelli, A. Riganó, R. Harrigan, M. Magistretti, P. Petruzza, E. Varesi, A. Redaelli, D. Erbetta, T. Marangon, F. Bedeschi, R. Fackenthal, G. Atwood and R. Bez | | |