ScienceDirect Alert: Solid-State Electronics, Vol. 52, Iss. 7, 2008

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Solid-State Electronics Volume 52, Issue 7,  Pages 997-1114 (July 2008)

1.

Editorial Board Page IFC

2.

Introduction of Dr. Young Kuk Page 997 Young Kuk

Reviews

3.

On-chip inductor above dummy metal patterns Pages 998-1001 Heng-Ming Hsu and Ming-Ming Hsieh

Regular Papers

4.

2 MeV ion irradiation effects on AlGaN/GaN HFET devices Pages 1011-1017 G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl and G. Tränkle

5.

Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor Pages 1043-1046 R.W. Chuang, P.C. Tsai, Y.K. Su and C.H. Chu

6.

Reduced band-gap due to phonons in SrTiO3 analyzed by ab initio calculations Pages 1082-1087 Wilfried Wunderlich

7.

Influence of interface state charges on RF performance of LDMOS transistor Pages 1099-1105 A. Kashif, T. Johansson, C. Svensson, S. Azam, T. Arnborg and Q. Wahab

8.

The influence of junction depth on short channel effects in vertical sidewall MOSFETs Pages 1002-1007 Lizhe Tan, Octavian Buiu, Stephen Hall, Enrico Gili, Takashi Uchino and Peter Ashburn

Letter

9.

4H–SiC BJTs with current gain of 110 Pages 1008-1010 Qingchun (Jon) Zhang, Anant Agarwal, Al Burk, Bruce Geil and Charles Scozzie

10.

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures Pages 1018-1023 Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu and Yin-Shan Huang

11.

Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion Pages 1024-1031 O. Bengtsson, L. Vestling and J. Olsson

12.

Thermionic field emission at electrodeposited Ni–Si Schottky barriers Pages 1032-1038 M.E. Kiziroglou, X. Li, A.A. Zhukov, P.A.J. de Groot and C.H. de Groot

13.

Dependence of backgating on the type of deep centres in the substrate of GaAs FETs Pages 1039-1042 Nouredine Sengouga and Noura A. Abdeslam

14.

Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state Pages 1047-1051 V. Dobrovolsky, F. Sizov, S. Cristoloveanu and S. Pavljuk

15.

Calculation of cosmic ray limited maximum DC blocking voltages of high voltage silicon PIN diodes Pages 1052-1057 Friedhelm D. Bauer

16.

Modeling of double-π equivalent circuit for on-chip symmetric spiral inductors Pages 1058-1063 Yang Tang, Bo Liu, Li Zhang, Jie Pan, Liwu Yang and Yan Wang

17.

Compact model for short channel symmetric doped double-gate MOSFETs Pages 1064-1070 Antonio Cerdeira, Benjamín Iñiguez and Magali Estrada

18.

Effects of surface passivation in porous silicon as H2 gas sensor Pages 1071-1074 N.K. Ali, M.R. Hashim and A. Abdul Aziz

19.

A proposal for enhancement of optical nonlinearity in GaN/AlGaN centered defect quantum box (CDQB) nanocrystal Pages 1075-1081 A. Rostami, H. Rasooli Saghai and H. Baghban Asghari Nejad

20.

Surface-recombination-free InGaAs/InP HBTs and the base contact recombination Pages 1088-1091 Z. Jin, X. Liu, W. Prost and F.-J. Tegude

21.

Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics Pages 1092-1098 Ramón Salazar, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Ching-Sung Ho and Juin J. Liou

22.

Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions Pages 1106-1113 Yanqing Deng, MD Monirul Islam, Mikhail Gaevski, Zijiang Yang, Vinod Adivarahan and Asif Khan

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