Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures -- May 2008

Volume 26, Issue 3 , pp. 901-1190

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Regular Articles Brief Reports and Comments PAPERS FROM THE 25th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY Nitrides Growth & Characterization Oxides & Novel Materials Detectors & Solar Cells Lasers & Emitters Transistors

Regular Articles
	Microscopic investigation of the CdS buffer layer growth on Cu(In,Ga)Se2 absorbers S. Sadewasser, W. Bremsteller, T. Plake, C. A. Kaufmann, and Ch. Pettenkofer pp. 901-903 Abstract    Full Text: [ HTML Sectioned HTML   PDF (503 kB)  GZipped PS   ]    Order
	Statistical representation of intrinsic electronic tunneling characteristics through alkyl self-assembled monolayers in nanowell device structures Hyunwook Song, Takhee Lee, Nak-Jin Choi, and Hyoyoung Lee pp. 904-908 Abstract    Full Text: [ HTML Sectioned HTML   PDF (539 kB)  GZipped PS   ]    Order
	Effect of substrate temperature on structural and electrical properties of liquid-delivery metal organic chemical vapor deposited indium oxide thin films on silicon S. Venkat, N. Pammi, B. S. Sahu, Nak-Jin Seong, and Soon-Gil Yoon pp. 909-913 Abstract    Full Text: [ HTML Sectioned HTML   PDF (806 kB)  GZipped PS   ]    Order
	Controllable fabrication of the micropore shape of two-dimensional photonic crystals using holographic lithography Mei-Li Hsieh and Yi-Sheng Lan pp. 914-917 Abstract    Full Text: [ HTML Sectioned HTML   PDF (341 kB)  GZipped PS   ]    Order
	Microelectromechanical system microhotplates for reliability testing of thin films and nanowires Juan C. Aceros, Nicol E. McGruer, and George G. Adams pp. 918-926 Abstract    Full Text: [ HTML Sectioned HTML   PDF (974 kB)  GZipped PS   ]    Order
	Field emission for cantilever sensors C. K. Yang, A. J. le Fèbre, G. Pandraud, E. van der Drift, and P. J. French pp. 927-933 Abstract    Full Text: [ HTML Sectioned HTML   PDF (720 kB)  GZipped PS   ]    Order
	Ion beam machining of Si layer deposited on Zerodur® substrate Yuichi Kurashima, Tomonori Tajima, Iwao Miyamoto, Manabu Ando, and Atsushi Numata pp. 934-938 Abstract    Full Text: [ HTML Sectioned HTML   PDF (543 kB)  GZipped PS   ]    Order
	Electron beam induced deposition of iron nanostructures G. Hochleitner, H. D. Wanzenboeck, and E. Bertagnolli pp. 939-944 Abstract    Full Text: [ HTML Sectioned HTML   PDF (631 kB)  GZipped PS   ]    Order
	Resistivity and surface states density of n- and p-type silicon nanowires F. Vaurette, J. P. Nys, D. Deresmes, B. Grandidier, and D. Stiévenard pp. 945-948 Abstract    Full Text: [ HTML Sectioned HTML   PDF (326 kB)  GZipped PS   ]    Order
	Probe current, probe size, and the practical brightness for probe forming systems M. S. Bronsgeest, J. E. Barth, L. W. Swanson, and P. Kruit pp. 949-955 Abstract    Full Text: [ HTML Sectioned HTML   PDF (302 kB)  GZipped PS   ]    Order
	Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Tung-Hsun Chung, Shih-Yen Lin, and Meng-Chyi Wu pp. 956-958 Abstract    Full Text: [ HTML Sectioned HTML   PDF (318 kB)  GZipped PS   ]    Order
	Stable room temperature deposited amorphous InGaZnO4 thin film transistors Wantae Lim, S.-H. Kim, Yu-Lin Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, and I. I. Kravchenko pp. 959-962 Abstract    Full Text: [ HTML Sectioned HTML   PDF (323 kB)  GZipped PS   ]    Order
	Inhibiting spontaneous etching of nanoscale electron beam induced etching features: Solutions for nanoscale repair of extreme ultraviolet lithography masks Matthew G. Lassiter, Ted Liang, and Philip D. Rack pp. 963-967 Abstract    Full Text: [ HTML Sectioned HTML   PDF (427 kB)  GZipped PS   ]    Order
	Dependence of Zn1−xMgxO:P film properties on magnesium concentration H. S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, and F. Ren pp. 968-972 Abstract    Full Text: [ HTML Sectioned HTML   PDF (128 kB)  GZipped PS   ]    Order
	Fabrication of three-dimensional nanostructures by focused ion beam milling R. W. Tjerkstra, F. B. Segerink, J. J. Kelly, and W. L. Vos pp. 973-977 Abstract    Full Text: [ HTML Sectioned HTML   PDF (464 kB)  GZipped PS   ]    Order
	Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide Qing Peng, Joseph C. Spagnola, Hojo Daisuke, Kie Jin Park, and Gregory N. Parsons pp. 978-982 Abstract    Full Text: [ HTML Sectioned HTML   PDF (466 kB)  GZipped PS   ]    Order
	Field emission properties of individual zinc oxide nanowire field emitter K. S. Yeong and J. T. L. Thong pp. 983-989 Abstract    Full Text: [ HTML Sectioned HTML   PDF (691 kB)  GZipped PS   ]    Order
	Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, In-Hwan Lee, Cheul Ro Lee, and S. J. Pearton pp. 990-994 Abstract    Full Text: [ HTML Sectioned HTML   PDF (392 kB)  GZipped PS   ]    Order
	Nitrogen and hydrogen plasma treatments of multiwalled carbon nanotubes J. G. Jones, A. R. Waite, C. Muratore, and A. A. Voevodin pp. 995-1000 Abstract    Full Text: [ HTML Sectioned HTML   PDF (844 kB)  GZipped PS   ]    Order
	Potential of pulsed electron-beam deposition for nanomaterial fabrication: Spatial distribution of deposited materials A. Steigerwald and R. Mu pp. 1001-1005 Abstract    Full Text: [ HTML Sectioned HTML   PDF (379 kB)  GZipped PS   ]    Order
	Insights into the electron-field emission mechanism from nanostructured carbons: A multistep phenomenon and modeling Sanju Gupta pp. 1006-1010 Abstract    Full Text: [ HTML Sectioned HTML   PDF (84 kB)  GZipped PS   ]    Order
	Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors E. Pargon, M. Martin, J. Thiault, O. Joubert, J. Foucher, and T. Lill pp. 1011-1020 Abstract    Full Text: [ HTML Sectioned HTML   PDF (449 kB)  GZipped PS   ]    Order
	Field emission properties of ZnO nanorods coated with NiO film Ji Hoon Yang, Seung Youb Lee, Woo Seok Song, Yong Sook Shin, Chong-Yun Park, Hyun-Jin Kim, Wontae Cho, and Ki-Seok An pp. 1021-1024 Abstract    Full Text: [ HTML Sectioned HTML   PDF (318 kB)  GZipped PS   ]    Order
	Observation and control of electrochemical etching effects in the fabrication of InAs/AlSb/GaSb heterostructure devices Ning Su, Yong Tang, Ze Zhang, T. F. Kuech, and P. Fay pp. 1025-1029 Abstract    Full Text: [ HTML Sectioned HTML   PDF (259 kB)  GZipped PS   ]    Order
	Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application P. Zhou, H. B. Lv, M. Yin, L. Tang, Y. L. Song, T. A. Tang, Y. Y. Lin, A. Bao, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi pp. 1030-1032 Abstract    Full Text: [ HTML Sectioned HTML   PDF (228 kB)  GZipped PS   ]    Order
	Fully sealed carbon nanotube flat-panel light source and its application as thin film transistor–liquid-crystal display backlight Yu Zhang, S. Z. Deng, N. S. Xu, and Jun Chen pp. 1033-1037 Abstract    Full Text: [ HTML Sectioned HTML   PDF (306 kB)  GZipped PS   ]    Order
Brief Reports and Comments
	Field-emission cascades prepared by boron nitride cluster beam deposition Fengqi Song, Feng Zhou, Min Han, Jianguo Wan, Zongwen Liu, Jianfeng Zhou, and Guanghou Wang pp. 1038-1040 Abstract    Full Text: [ HTML Sectioned HTML   PDF (328 kB)  GZipped PS   ]    Order
PAPERS FROM THE 25th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY Nitrides [ Next Subject | Issue Index | Top / Bottom of Page]
	Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on M-plane films with in situ real time analysis by spectroscopic ellipsometry C. Boney, P. Misra, R. Pillai, D. Starikov, and A. Bensaoula pp. 1049-1052 Abstract    Full Text: [ HTML Sectioned HTML   PDF (102 kB)  GZipped PS   ]    Order
	Effects of bismuth on wide-depletion-width GaInNAs solar cells A. J. Ptak, R. France, C.-S. Jiang, and R. C. Reedy pp. 1053-1057 Abstract    Full Text: [ HTML Sectioned HTML   PDF (405 kB)  GZipped PS   ]    Order
	Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N2/Ar source gas mixtures Michael M. Oye, Seth R. Bank, Aaron J. Ptak, Robert C. Reedy, Mark S. Goorsky, and Archie L. Holmes, Jr. pp. 1058-1063 Abstract    Full Text: [ HTML Sectioned HTML   PDF (414 kB)  GZipped PS   ]    Order
	Growth and structural characteristics of GaN/AlN/nanothick -Al2O3/Si (111) W. C. Lee, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee, M. Hong, H. M. Ng, J. Kwo, and C. H. Hsu pp. 1064-1067 Abstract    Full Text: [ HTML Sectioned HTML   PDF (403 kB)  GZipped PS   ]    Order
Growth & Characterization [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe R. H. Sewell, J. M. Dell, and L. Faraone pp. 1068-1073 Abstract    Full Text: [ HTML Sectioned HTML   PDF (309 kB)  GZipped PS   ]    Order
	In situ molecular beam epitaxial growth of SiN films using a source port compatible electron-gun for silicon evaporation W. E. Hoke, T. D. Kennedy, A. Torabi, K. Y. Vandermeulen, and J. J. Mosca pp. 1074-1077 Abstract    Full Text: [ HTML Sectioned HTML   PDF (238 kB)  GZipped PS   ]    Order
	High electron mobility InAs0.8Sb0.2 grown on InP substrates by gas source molecular beam epitaxy Chichih Liao, Bing-Ruey Wu, K. C. Hsieh, and K. Y. Cheng pp. 1078-1080 Abstract    Full Text: [ HTML Sectioned HTML   PDF (176 kB)  GZipped PS   ]    Order
	Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice T. V. Chandrasekhar Rao, J. Antoszewski, J. B. Rodriguez, E. Plis, S. Krishna, and L. Faraone pp. 1081-1083 Abstract    Full Text: [ HTML Sectioned HTML   PDF (192 kB)  GZipped PS   ]    Order
	In(Ga, Al)As quantum dot/wire growth on InP T. E. Tzeng, David J. Y. Feng, C. Y. Chen, and T. S. Lay pp. 1084-1088 Abstract    Full Text: [ HTML Sectioned HTML   PDF (420 kB)  GZipped PS   ]    Order
	Temperature dependence of photoluminescence oxygen-related deep levels in Al0.2Ga0.3In0.5P:Be grown by solid source molecular beam epitaxy C. Soubervielle-Montalvo, V. Mishournyi, I. C. Hernández, and V. H. Méndez-García pp. 1089-1092 Abstract    Full Text: [ HTML Sectioned HTML   PDF (438 kB)  GZipped PS   ]    Order
	Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates V. H. Méndez-García, M. G. Ramírez-Elías, A. Gorbatchev, E. Cruz-Hernández, J. S. Rojas-Ramírez, I. Martínez-Velis, L. Zamora-Peredo, and M. López-López pp. 1093-1096 Abstract    Full Text: [ HTML Sectioned HTML   PDF (291 kB)  GZipped PS   ]    Order
	Direct electron beam patterning and molecular beam epitaxy growth of InAs: Site definition of quantum dots H. Yokota, K. Tsunashima, K. Iizuka, and H. Okamoto pp. 1097-1099 Abstract    Full Text: [ HTML Sectioned HTML   PDF (185 kB)  GZipped PS   ]    Order
	Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAs/GaAs quantum well structures by molecular beam epitaxy N. Chit Swe, O. Tangmattajittakul, S. Suraprapapich, P. Changmoang, S. Thainoi, C. Wissawinthanon, S. Kanjanachuchai, S. Ratanathammaphan, and S. Panyakeow pp. 1100-1104 Abstract    Full Text: [ HTML Sectioned HTML   PDF (538 kB)  GZipped PS   ]    Order
	Selective growth of CdTe on patterned CdTe/Si(211) T. Seldrum, R. Bommena, L. Samain, J. Dumont, S. Sivananthan, and R. Sporken pp. 1105-1109 Abstract    Full Text: [ HTML Sectioned HTML   PDF (372 kB)  GZipped PS   ]    Order
Oxides & Novel Materials [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide T. L. Goodrich, Z. Cai, M. D. Losego, J.-P. Maria, L. Fitting Kourkoutis, D. A. Muller, and K. S. Ziemer pp. 1110-1114 Abstract    Full Text: [ HTML Sectioned HTML   PDF (393 kB)  GZipped PS   ]    Order
	Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates D. Lubyshev, J. M. Fastenau, Y. Wu, W. K. Liu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke pp. 1115-1119 Abstract    Full Text: [ HTML Sectioned HTML   PDF (558 kB)  GZipped PS   ]    Order
	Fabrication of periodically polarity-inverted ZnO films T. Minegishi, A. Ishizawa, J. Kim, D. Kim, S. Ahn, S. Park, J. Park, I. Im, D. C. Oh, H. Nakano, K. Fujii, H. Jeon, and T. Yao pp. 1120-1123 Abstract    Full Text: [ HTML Sectioned HTML   PDF (370 kB)  GZipped PS   ]    Order
	High-quality nanothick single-crystal Y2O3 films epitaxially grown on Si (111): Growth and structural characteristics Y. J. Lee, W. C. Lee, C. W. Nieh, Z. K. Yang, A. R. Kortan, M. Hong, J. Kwo, and C.-H. Hsu pp. 1124-1127 Abstract    Full Text: [ HTML Sectioned HTML   PDF (275 kB)  GZipped PS   ]    Order
	Molecular beam epitaxy grown Ga2O3(Gd2O3) high dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics C. H. Lee, T. D. Lin, L. T. Tung, M. L. Huang, M. Hong, and J. Kwo pp. 1128-1131 Abstract    Full Text: [ HTML Sectioned HTML   PDF (261 kB)  GZipped PS   ]    Order
	Oxide scalability in Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs heterostructures K. H. Shiu, C. H. Chiang, Y. J. Lee, W. C. Lee, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai pp. 1132-1135 Abstract    Full Text: [ HTML Sectioned HTML   PDF (301 kB)  GZipped PS   ]    Order
Detectors & Solar Cells [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector R. V. Shenoi, R. S. Attaluri, A. Siroya, J. Shao, Y. D. Sharma, A. Stintz, T. E. Vandervelde, and S. Krishna pp. 1136-1139 Abstract    Full Text: [ HTML Sectioned HTML   PDF (439 kB)  GZipped PS   ]    Order
	Tailoring detection wavelength of InGaAs quantum wire infrared photodetector C. L. Tsai, K. Y. Cheng, S. T. Chou, S. Y. Lin, C. Xu, and K. C. Hsieh pp. 1140-1144 Abstract    Full Text: [ HTML Sectioned HTML   PDF (407 kB)  GZipped PS   ]    Order
	nBn detectors based on InAs/GaSb type-II strain layer superlattice G. Bishop, E. Plis, J. B. Rodriguez, Y. D. Sharma, H. S. Kim, L. R. Dawson, and S. Krishna pp. 1145-1148 Abstract    Full Text: [ HTML Sectioned HTML   PDF (118 kB)  GZipped PS   ]    Order
	Growth and characterization of GaAs1−xSbx barrier layers for advanced concept solar cells S. P. Bremner, G. M. Liu, N. Faleev, K. Ghosh, and C. B. Honsberg pp. 1149-1152 Abstract    Full Text: [ HTML Sectioned HTML   PDF (404 kB)  GZipped PS   ]    Order
Lasers & Emitters [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Molecular beam epitaxial growth and characteristics of 1.52  µm metamorphic InAs quantum dot lasers on GaAs Z. Mi, C. Wu, J. Yang, and P. Bhattacharya pp. 1153-1156 Abstract    Full Text: [ HTML Sectioned HTML   PDF (412 kB)  GZipped PS   ]    Order
	InGaAsP/InP buried-heterostructure laser diodes grown on InP using molecular beam epitaxy and metal-organic chemical vapor deposition G. W. Pickrell, H. L. Zhang, H. W. Ren, D. Zhang, Q. Xue, K. A. Anselm, and W. Y. Hwang pp. 1157-1159 Abstract    Full Text: [ HTML Sectioned HTML   PDF (66 kB)  GZipped PS   ]    Order
	High-power, narrow-ridge, mid-infrared interband cascade lasers C. L. Canedy, C. S. Kim, M. Kim, D. C. Larrabee, J. A. Nolde, W. W. Bewley, I. Vurgaftman, and J. R. Meyer pp. 1160-1162 Abstract    Full Text: [ HTML Sectioned HTML   PDF (213 kB)  GZipped PS   ]    Order
	InGaAlAs/InGaAs strain-balanced multi-quantum-well laser/semiconductor optical amplifiers operating at excited transitions David J. Y. Feng, C. L. Chiu, S. H. Lin, T. S. Lay, and T. Y. Chang pp. 1163-1166 Abstract    Full Text: [ HTML Sectioned HTML   PDF (96 kB)  GZipped PS   ]    Order
	Manufacturing of laser diodes grown by molecular beam epitaxy for coarse wavelength division multiplexing systems K. A. Anselm, W. Y. Hwang, H. W. Ren, D. Zhang, and J. Um pp. 1167-1170 Abstract    Full Text: [ HTML Sectioned HTML   PDF (113 kB)  GZipped PS   ]    Order
	Growth and characterization of ZnxCd1−xSe/ZnxCdyMg1−x−ySe asymmetric coupled quantum well structures for quantum cascade laser applications W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and Maria C. Tamargo pp. 1171-1173 Abstract    Full Text: [ HTML Sectioned HTML   PDF (210 kB)  GZipped PS   ]    Order
Transistors [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin pp. 1174-1177 Abstract    Full Text: [ HTML Sectioned HTML   PDF (339 kB)  GZipped PS   ]    Order
	Si metal-oxide-semiconductor devices with high HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition C. H. Pan, J. Kwo, K. Y. Lee, W. C. Lee, L. K. Chu, M. L. Huang, Y. J. Lee, and M. Hong pp. 1178-1181 Abstract    Full Text: [ HTML Sectioned HTML   PDF (377 kB)  GZipped PS   ]    Order
	Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge/Si1−xGex/Si substrates with Al2O3 gate dielectric D. Shahrjerdi, N. Nuntawong, G. Balakrishnan, D. I. Garcia-Gutierrez, A. Khoshakhlagh, E. Tutuc, D. Huffaker, J. C. Lee, and S. K. Banerjee pp. 1182-1186 Abstract    Full Text: [ HTML Sectioned HTML   PDF (517 kB)  GZipped PS   ]    Order
	Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications Ning Li, Eric S. Harmon, David B. Salzman, Dmitri N. Zakharov, Jong-Hyeok Jeon, Eric Stach, Jerry M. Woodall, X. W. Wang, T. P. Ma, and Fred Walker pp. 1187-1190 Abstract    Full Text: [ HTML Sectioned HTML   PDF (495 kB)  GZipped PS   ]    Order

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