ScienceDirect Alert: Solid-State Electronics, Vol. 52, Iss. 6, 2008

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 52, Issue 6,  Pages 839-996 (June 2008)

1.

Editorial Board Page IFC

Letters

2.

Physical parameters extraction from current–voltage characteristic for diodes using multiple nonlinear regression analysis Pages 839-843 Chien-Chih Liu, Chih-Yen Chen, Chi-Yuan Weng, Chien-Chun Wang, Feng-Lin Jenq, Po-Jen Cheng, Yeong-Her Wang and Mau-Phon Houng

3.

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories Pages 844-848 Seung-Hwan Seo, Se-Woon Kim, Jang-Uk Lee, Gu-Cheol Kang, Kang-Seob Roh, Kwan-Young Kim, Soon-Young Lee, Chang-Min Choi, Kwan-Jae Song, So-Ra Park, Jun-Hyun Park, Ki-Chan Jeon, Dong Myong Kim, Dae Hwan Kim, Hyungcheol Shin, Jong Duk Lee and Byung-Gook Park

Regular Papers

4.

k·p calculations of p-type δ-doped quantum wells in Si Pages 849-856 Isaac Rodríguez-Vargas and Miguel E. Mora-Ramos

5.

Analysis of relative intensity noise in tapered grating QWS-DFB laser diodes by using three rate equations model Pages 857-862 F. Shahshahani and V. Ahmadi

6.

A universal electron mobility model of strained Si MOSFETs based on variational wave functions Pages 863-870 Renrong Liang, Debin Li and Jun Xu

7.

Ferromagnetism in self-assembled Ge quantum dots material followed by Mn-implantation and annealing Pages 871-876 I.T. Yoon, C.J. Park, S.W. Lee, T.W. Kang, D.W. Koh and D.J. Fu

8.

Fabrication of field emission display prototype utilizing printed carbon nanotubes/nanofibers emitters Pages 877-881 P.S. Guo, T. Chen, Y.W. Chen, Z.J. Zhang, T. Feng, L.L. Wang, L.F. Lin, Z. Sun and Z.H. Zheng

9.

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process Pages 882-885 Kwang-Jow Gan, Dong-Shong Liang, Cher-Shiung Tsai, Chun-Ming Wen and Yaw-Hwang Chen

10.

Substrate current characterization and optimization of high voltage LDMOS transistors Pages 886-891 Jun Wang, Rui Li, Yemin Dong, Xin Zou, Li Shao and W.T. Shiau

11.

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour Pages 892-898 Daniel Donoval, Andrej Vrbicky, Juraj Marek, Ales Chvala and Peter Beno

12.

Small-signal performance and modeling of sub-50 nm nMOSFETs with fT above 460-GHz Pages 899-908 V. Dimitrov, J.B. Heng, K. Timp, O. Dimauro, R. Chan, M. Hafez, J. Feng, T. Sorsch, W. Mansfield, J. Miner, A. Kornblit, F. Klemens, J. Bower, R. Cirelli, E.J. Ferry, A. Taylor, M. Feng and G. Timp

13.

Normally-off 4H-SiC trench-gate MOSFETs with high mobility Pages 909-913 J. Wu, J. Hu, J.H. Zhao, X. Wang, X. Li, L. Fursin and T. Burke

14.

Thin-film inverters based on high mobility microcrystalline silicon thin-film transistors Pages 914-918 Kah-Yoong Chan, Eerke Bunte, Dietmar Knipp and Helmut Stiebig

15.

Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics Pages 919-925 Sébastien Frégonèse, Yan Zhuang and Joachim N. Burghartz

16.

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz Pages 926-929 X.L. Wang, T.S. Chen, H.L. Xiao, C.M. Wang, G.X. Hu, W.J. Luo, J. Tang, L.C. Guo and J.M. Li

17.

A physical model of floating body effects in polysilicon thin film transistors Pages 930-936 W.J. Wu, R.H. Yao, T. Chen, R.S. Chen, W.L. Deng and X.R. Zheng

18.

Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing range Pages 937-940 Jin Dongyue, Zhang Wanrong, Shen Pei, Xie Hongyun, Wang Yang, Zhang Wei, He Lijian, Sha Yongping, Li Jia and Gan Junning

19.

Field electron emission of multiwalled carbon nanotubes and carbon nanofibers grown from Camphor Pages 941-945 Savita P. Somani, Prakash R. Somani, A. Yoshida, M. Tanemura, S.P. Lau and M. Umeno

20.

Improved SiGe power HBT characteristics by emitter layout Pages 946-951 Shou-Chien Huang, Chia-Tsung Chang, Chun-Ting Pan and Yue-Ming Hsin

21.

High stability and low driving voltage green organic light emitting diode with molybdenum oxide as buffer layer Pages 952-956 Xue-Yin Jiang, Zhi-Lin Zhang, Jin Cao and Wen-Qing Zhu

22.

Low-voltage constant-gm rail-to-rail CMOS operational amplifier input stage Pages 957-961 Yan Lu and Ruo He Yao

23.

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching Pages 962-967 Haiyong Gao, Fawang Yan, Yang Zhang, Jinmin Li, Yiping Zeng and Guohong Wang

24.

Degradation of AlGaN-based ultraviolet light emitting diodes Pages 968-972 S. Sawyer, S.L. Rumyantsev and M.S. Shur

25.

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness Pages 973-979 P. Kordoš, D. Gregušová, R. Stoklas, Š. Gaži and J. Novák

26.

Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts Pages 980-985 Iman Hassaninia, Mohammad Hossein Sheikhi and Zoheir Kordrostami

27.

Study of GaN growth on ultra-thin Si membranes Pages 986-989 Xi Wang, Aimin Wu, Jing Chen, Xi Wang, Yuxin Wu, Jianjun Zhu and Hui Yang

28.

Simulation for capacitance correction from Nyquist plot of complex impedance–voltage characteristics Pages 990-996 A. Sertap Kavasoglu, Nese Kavasoglu and Sener Oktik

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