ScienceDirect Alert: Solid-State Electronics, Vol. 52, Iss. 5, 2008

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Solid-State Electronics Volume 52, Issue 5,  Pages 597-838 (May 2008)

1.

Editorial Board Page IFC

Review

2.

Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET Pages 597-605 L. Harik, J.M. Sallese and M. Kayal

Regular Papers

3.

Low-frequency noise properties of double channel AlGaN/GaN HEMTs Pages 606-611 S.K. Jha, C. Surya, K.J. Chen, K.M. Lau and E. Jelencovic

4.

Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication Pages 612-617 Manav Sheoran, Ajay Upadhyaya and Ajeet Rohatgi

5.

Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD Pages 618-624 S.V. Averine, P.I. Kuznetzov, V.A. Zhitov and N.V. Alkeev

6.

A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs Pages 625-631 G. Krokidis, J.P. Xanthakis and N.K. Uzunoglu

7.

Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs Pages 632-636 V. Desmaris, J.Y. Shiu, N. Rorsman, H. Zirath and E.Y. Chang

8.

Accurate thermal analysis of GaN HFETs Pages 637-643 A.M. Conway, P.M. Asbeck, J.S. Moon and M. Micovic

9.

Growth and optical properties of Zn:Ce:Cu:LiNbO3 single crystals Pages 644-648 Decai Ma, Biao Wang, Rui Wang, Yuan Wei, Hong Cheng Liu and Hai Wang

10.

Variation and mismatch effects of the low-temperature poly-Si TFTs on the circuit for the X-ray active matrix sensor Pages 649-656 Ya-Hsiang Tai, Shih-Che Huang, Ko-Ching Su and Chen-Yeh Tseng

11.

High-performance white organic light-emitting device using non-doped-type structure Pages 657-662 Huishan Yang, Yanwei Shi, Yi Zhao and Shiyong Liu

12.

Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events Pages 663-674 A. Gendron, P. Renaud, M. Bafleur and N. Nolhier

13.

Realizing high voltage SJ-LDMOS with non-uniform N-buried layer Pages 675-678 Wanjun Chen, Bo Zhang and Zhaoji Li

14.

Ultraviolet Schottky detector based on epitaxial ZnO thin film Pages 679-682 Dayong Jiang, Jiying Zhang, Youming Lu, Kewei Liu, Dongxu Zhao, Zhenzhong Zhang, Dezhen Shen and Xiwu Fan

15.

The effects of radiation-induced interface traps on base current in gated bipolar test structures Pages 683-687 X.J. Chen and H.J. Barnaby

16.

A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation Pages 688-694 Xiaochuan Bi, Jack R. East, Umberto Ravaioli and George I. Haddad

17.

Subthreshold characteristics of polysilicon TFTs Pages 695-703 Wanling Deng, Xueren Zheng, Rongsheng Chen and Yuan Liu

18.

Analytical extraction of small and large signal models for FinFET varactors Pages 704-710 Giovanni Crupi, Dominique M.M.-P. Schreurs, Morin Dehan, Dongping Xiao, Alina Caddemi, Abdelkarim Mercha and Stefaan Decoutere

19.

Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics Pages 711-724 Tanvir Hasan Morshed, Siva Prasad Devireddy, Zeynep Çelik-Butler, Ajit Shanware, Keith Green, J.J. Chambers, M.R. Visokay and Luigi Colombo

20.

Microwave performance of field-plate 0.13-μm MOS transistors with varying field-plate extension Pages 725-729 Hsien-Chin Chiu, Shao-Wei Lin, Chia-Shih Cheng and Chien-Cheng Wei

21.

Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates Pages 730-739 I. Marano, V. d’Alessandro and N. Rinaldi

22.

Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD Pages 740-744 Sher Azam, C. Svensson and Q. Wahab

23.

High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications Pages 745-748 Ping-Chun Yeh, Hwann-Kaeo Chiou, Chwan-Ying Lee, John Yeh, Yi-Hung Tsai, Denny Tang and John Chern

24.

Pressure induced, electronic and optical properties of zincblende InP Pages 749-755 Satyam S. Parashari, S. Kumar and S. Auluck

25.

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Pages 756-764 Yi Zhou, Claude Ahyi, Tamara Isaacs-Smith, Michael Bozack, Chin-Che Tin, John Williams, Minseo Park, An-jen Cheng, Jung-Hyun Park, Dong-Joo Kim, Dake Wang, Edward A. Preble, Andrew Hanser and Keith Evans

26.

A 10 GHz low phase-noise CMOS voltage-controlled oscillator using dual-transformer technology Pages 765-770 Hsien-Chin Chiu, Chia-Shih Cheng, Yi-Tzu Yang and Chien-Cheng Wei

27.

Modeling non-quasi-static effects in channel thermal noise and induced-gate noise in MOS field-effect transistors Pages 771-774 Abhay Deshpande and R.P. Jindal

28.

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Pages 775-781 Malin Borg, Eric Lefebvre, Mikael Malmkvist, Ludovic Desplanque, Xavier Wallart, Yannick Roelens, Gilles Dambrine, Alain Cappy, Sylvain Bollaert and Jan Grahn

29.

Hopping photoconductivity and the effectiveness of phonon detection in GaAs:Zn bolometers Pages 782-786 B.M. Taele, Himanshu Narayan and R. Mukaro

30.

Mobility model for compact device modeling of OTFTs made with different materials Pages 787-794 M. Estrada, I. Mejía, A. Cerdeira, J. Pallares, L.F. Marsal and B. Iñiguez

31.

Dynamics of AlGaN based detectors in the deep-UV Pages 795-800 G. Mazzeo, J.-L. Reverchon, G. Conte, A. Dussaigne and J.-Y. Duboz

32.

High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs Pages 801-807 N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, M. Lokshin, E. Simoen and C. Claeys

33.

The effect of a smart body tie on the bottom-gate thin film transistor Pages 808-812 Jyi-Tsong Lin, Kuo-Dong Huang and Shu-Fen Hu

34.

Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering Pages 813-816 R. Navamathavan, Chi Kyu Choi, Eun-Jeong Yang, Jae-Hong Lim, Dae-Kue Hwang and Seong-Ju Park

35.

Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique Pages 817-823 Hai Lu, Dongsheng Cao, Xiangqian Xiu, Zili Xie, Rong Zhang, Youdou Zheng and Zhonghui Li

36.

Hot-carrier effects as a function of silicon film thickness in nanometer-scale SOI pMOSFETs Pages 824-829 Sung Jun Jang, Dae Hyun Ka, Chong Gun Yu, Won-Ju Cho and Jong Tae Park

37.

Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs Pages 830-837 A. Cerdeira, O. Moldovan, B. Iñiguez and M. Estrada

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