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ScienceDirect Alert: Solid-State Electronics, Vol. 52, Iss. 3, 2008


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Solid-State ElectronicsSolid-State Electronics

Volume 52, Issue 3,  Pages 341-486 (March 2008)

Special Issue: Papers Selected from the 3rd International TFT Conference - ITC’07
Edited by Guglielmo Fortunato

 1. Editorial Board
Page IFC
 
 2. Foreword
Page 341
Guglielmo Fortunato
 
 3. Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation
Pages 342-347
Ming-Wen Ma, Chih-Yang Chen, Chun-Jung Su, Woei-Cherng Wu, Tsung-Yu Yang, Kuo-Hsing Kao, Tien-Sheng Chao and Tan-Fu Lei
 
 4. Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic
Pages 348-352
A. Pecora, L. Maiolo, M. Cuscunà, D. Simeone, A. Minotti, L. Mariucci and G. Fortunato
 
 5. Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization
Pages 353-358
Ryoichi Ishihara, Vikas Rana, Ming He, Y. Hiroshima, S. Inoue, Wim Metselaar and Kees Beenakker
 
 6. Progress in fabrication processing of thin film transistors
Pages 359-364
Kazuya Yoshioka, Toshiyuki Sameshima and Naoki Sano
 
 7. High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
Pages 365-371
Chun-Chien Tsai, Yao-Jen Lee, Jyh-Liang Wang, Kai-Fang Wei, I-Che Lee, Chih-Chung Chen and Huang-Chung Cheng
 
 8. Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate
Pages 372-376
Soon-Young Oh, Chang-Geun Ahn, Jong-Heon Yang, Won-Ju Cho, Woo-Hyun Lee, Hyun-Mo Koo and Seong-Jae Lee
 
 9. Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet
Pages 377-380
T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami and S. Miyazaki
 
 10. Role of hydrogen in excimer laser annealing of hydrogen-modulation doped a-Si film
Pages 381-387
Akira Heya, Naoto Matsuo, Tadashi Serikawa and Naoya Kawamoto
 
 11. Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs – Effects of gate width variation and device orientation
Pages 388-393
Giannis P. Kontogiannopoulos, Filippos V. Farmakis, Dimitrios N. Kouvatsos, George J. Papaioannou and Apostolos T. Voutsas
 
 12. Investigation of the undershoot effect in polycrystalline silicon thin film transistors
Pages 394-399
L. Michalas, G.J. Papaioannou, D.N. Kouvatsos and A.T. Voutsas
 
 13. Universal compact model for long- and short-channel Thin-Film Transistors
Pages 400-405
Benjamin Iñiguez, Rodrigo Picos, Dmitry Veksler, A. Koudymov, Michael S. Shur, Trond Ytterdal and Warren Jackson
 
 14. Electrical instability in self-aligned p-channel polysilicon TFTs related to damaged regions present at the gate edges
Pages 406-411
M. Rapisarda, L. Mariucci, A. Valletta, A. Pecora, G. Fortunato, C. Caligiore, E. Fontana, S. Leonardi and F. Tramontana
 
 15. Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer
Pages 412-416
L. Mariucci, D. Simeone, S. Cipolloni, L. Maiolo, A. Pecora, G. Fortunato and S. Brotherton
 
 16. OFET for gas sensing based on SuMBE grown pentacene films
Pages 417-421
Tullio Toccoli, Alessia Pallaoro, Matteo Tonezzer, Nicola Coppedè and Salvatore Iannotta
 
 17. Critical issues in plasma deposition of microcrystalline silicon for thin film transistors
Pages 422-426
Pere Roca i Cabarrocas, Yassine Djeridane, V.D. Bui, Yvan Bonnassieux and Alexey Abramov
 
 18. All hot wire CVD TFTs with high deposition rate silicon nitride (3 nm/s)
Pages 427-431
R.E.I. Schropp, S. Nishizaki, Z.S. Houweling, V. Verlaan, C.H.M. van der Werf and H. Matsumura
 
 19. Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors
Pages 432-435
Maher Oudwan, Alexey Abramov, Pere Roca i Cabarrocas and François Templier
 
 20. Specific spice modeling of microcrystalline silicon TFTs
Pages 436-442
O. Moustapha, V.D. Bui, Y. Bonnassieux and J.Y. Parey
 
 21. High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors
Pages 443-448
E. Fortunato, P. Barquinha, G. Gonçalves, L. Pereira and R. Martins
 
 22. Source-gated thin-film transistors
Pages 449-454
J.M. Shannon and F. Balon
 
 23. Area laser crystallized LTPS TFTs with implanted contacts for active matrix OLED displays
Pages 455-461
Efstathios Persidis, Holger Baur, Fabio Pieralisi, Patrick Schalberger and Norbert Fruehauf
 
 24. New PMOS LTPS–TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving
Pages 462-466
Jae-Hoon Lee, Sang-Geun Park, Sang-Myeon Han, Min-Koo Han and Kee-Chan Park
 
 25. Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch
Pages 467-472
Jae-Hoon Lee, Hyun-Sang Park, Jae-Hong Jeon and Min-Koo Han
 
 26. Mechanical stability of poly-Si TFT on metal foil
Pages 473-477
Jun Hyuk Cheon, Jung Ho Bae and Jin Jang
 
 27. A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display
Pages 478-481
Se Hwan Kim, Eung Bum Kim, Hee Yeon Choi, Moon Hyo Kang, Ji Ho Hur and Jin Jang
 
 28. Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon
Pages 482-486
J.H. Oh, K.W. Ahn, D.H. Kang, W.H. Park, J. Jang, Y.J. Chang, J.B. Choi, H.K. Min and C.W. Kim
 


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