ScienceDirect Alert: Solid-State Electronics, Vol. 52, Iss. 2, 2008

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Solid-State Electronics Volume 52, Issue 2,  Pages 171-340 (February 2008)

1.

Editorial Board Page IFC

Letters

2.

Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes Pages 171-174 G. Parish, R.A. Kennedy, G.A. Umana-Membreno and B.D. Nener

3.

Multiple-input NOR logic design using negative differential resistance circuits implemented by standard SiGe process Pages 175-178 Kwang-Jow Gan, Cher-Shiung Tsai, Dong-Shong Liang, Chun-Da Tu and Yaw-Hwang Chen

4.

Influence of the polymer dielectric characteristics on the performance of pentacene organic field-effect transistors Pages 179-181 K.N. Narayanan Unni, Sylvie Dabos-Seignon, Ajay K. Pandey and Jean-Michel Nunzi

5.

Field effect transistor as ultrafast detector of modulated terahertz radiation Pages 182-185 V.Yu. Kachorovskii and M.S. Shur

6.

Modeling the effects of the channel electron velocity on the channel surface potential of ballistic MOSFETs Pages 186-189 Ling-Feng Mao

7.

Extraction of series resistance using physical mobility and current models for MOSFETs Pages 190-195 Hisao Katto

Review

8.

An area efficient body contact for low and high voltage SOI MOSFET devices Pages 196-204 Arash Daghighi, Mohamed Osman and Mohamed A. Imam

Regular Papers

9.

Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process Pages 205-210 A. Ali, N. Abbas Shah and A. Maqsood

10.

High-efficiency red phosphorescent organic light-emitting diodes based on metal-microcavity structure Pages 211-214 X.Y. Sun, W.L. Li, M.L. Xu, B. Chu, D.F. Bi, B. Li, Y.W. Hu, Z.Q. Zhang and Z.Z. Hu

11.

Temperature effect of metal–oxide–semiconductor field-effect-transistors’ gate current evaluated with the mask dimensions Pages 215-220 Chun-Chia Yeh, Chun-Feng Neih, Yen-Yu Chen and Jeng Gong

12.

Dynamic response of QWS-DFB lasers with convex tapered grating structure and non-zero facet reflection Pages 221-226 N. Bazhdanzadeh, V. Ahmadi, H. Ghafoorifard and F. Shahshahani

13.

650 nm Resonant-cavity light-emitting diodes with dielectric distributed Bragg reflectors Pages 227-232 Po-Hsun Lei and Chyi-Dar Yang

14.

An ultra-low power CMOS random number generator Pages 233-238 Sheng-hua Zhou, Wancheng Zhang and Nan-Jian Wu

15.

High performance SiGe HBT power unit-cell for S-Band open collector adaptive bias power amplifier design Pages 239-244 Hwann-Kaeo Chiou, Ping-Chun Yeh and Kuei-Cheng Lin

16.

Optical and electrochemical properties of nanosized CuO via thermal decomposition of copper oxalate Pages 245-248 Xiaojun Zhang, Dongen Zhang, Xiaomin Ni and Huagui Zheng

17.

Method of controlling spontaneous emission from porous silicon fabricated using pulsed current etching Pages 249-254 N.K. Ali, M.R. Hashim, A. Abdul Aziz and I. Hamammu

18.

Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress Pages 255-258 Piyas Samanta

19.

Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations Pages 259-263 Jing-Feng Gong and Philip C.H. Chan

20.

On the recovery of interface state in pMOSFETs subjected to NBTI and SHI stress Pages 264-268 Yangang Wang

21.

Quasi-static capacitance–voltage characterizations of carrier accumulation and depletion phenomena in pentacene thin film transistors Pages 269-274 Yi-Ming Chen, Chi-Feng Lin, Jiun-Haw Lee and JianJang Huang

22.

An efficient channel segmentation approach for a large-signal NQS MOSFET model Pages 275-281 Matthias Bucher and Antonios Bazigos

23.

An explicit surface-potential-based model for undoped double-gate MOSFETs Pages 282-288 Jing-Feng Gong, Philip C.H. Chan and Mansun Chan

24.

Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation Pages 289-293 Jian-Jiun Huang, Dei-Wei Chou, Po-Wen Sze and Yeong-Her Wang

25.

High field emission enhancement of ZnO-nanorods via hydrothermal synthesis Pages 294-298 Jing Chen, Wei Lei, Weiqiang Chai, Zichen Zhang, Chi Li and Xiaobing Zhang

26.

A new analytical compact model for two-dimensional finger photodiodes Pages 299-304 T. Naeve, M. Hohenbild and P. Seegebrecht

27.

An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET Pages 305-311 Harsupreet Kaur, Sneha Kabra, Subhasis Haldar and R.S. Gupta

28.

Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55 μm Pages 312-322 K. Abedi, V. Ahmadi, E. Darabi, M.K. Moravvej Farshi and M.H. Sheikhi

29.

On the physical origins of mismatch in Si/SiGe:C heterojunction bipolar transistors for BiCMOS technologies Pages 323-337 Stéphane Danaie, Mathieu Marin and Gérard Ghibaudo

Short Communication

30.

Current instability and single-mode THz generation in ungated two-dimensional electron gas Pages 338-340 M.V. Cheremisin and G.G. Samsonidze

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