In this month's issue (Volume 3, Issue 1, 2008), I've found an interesting paper from the HiSim people. Have a look at it:
A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2
(Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue)
