Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

September 2010

Volume 28, Issue 5, pp. L39-1072

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Letters
	Fabrication of antireflection-structured surface using vertical nanowires as an initial structure Keisuke Nagato, Hiroki Moritani, Tetsuya Hamaguchi, and Masayuki Nakao pp. L39-L42 Abstract   Full Text: [ Read Online (HTML)   PDF  (398 kB)  ]    Order
	Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates R. Khanna, E. A. Douglas, D. P. Norton, S. J. Pearton, and F. Ren pp. L43-L46 Abstract   Full Text: [ Read Online (HTML)   PDF  (284 kB)  ]    Order
	Proton irradiation effects on AlN/GaN high electron mobility transistors C. F. Lo, C. Y. Chang, B. H. Chu, H.-Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David. J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, and F. Ren pp. L47-L51 Abstract   Full Text: [ Read Online (HTML)   PDF  (407 kB)  ]    Order
	Radioisotope-powered ion gauge with super high stability, long life, and large sensitivity range from ultrahigh vacuum to high pressure Yuerui Lu and Amit Lal pp. L52-L54 Abstract   Full Text: [ Read Online (HTML)   PDF  (134 kB)  ]    Order
	Stabilization of a tungsten 310 cold field emitter Keigo Kasuya, Souichi Katagiri, Takashi Ohshima, and Shigeru Kokubo pp. L55-L60 Abstract   Full Text: [ Read Online (HTML)   PDF  (441 kB)  ]    Order
Articles
	Photoyield recovery of Cs+NF3 activated negative electron affinity GaAs photoemitters without additional alkali deposition G. A. Mulhollan and J. C. Bierman pp. 899-902 Abstract   Full Text: [ Read Online (HTML)   PDF  (87 kB)  ]    Order
	Integrated high-inductance three-dimensional toroidal inductors Lin Yu, Dae-Hee Weon, Jeong-Il Kim, and Saeed Mohammadi pp. 903-907 Abstract   Full Text: [ Read Online (HTML)   PDF  (300 kB)  ]    Order
	InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, S. Doğan, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, and Chang-Zhi Lu pp. 908-911 Abstract   Full Text: [ Read Online (HTML)   PDF  (520 kB)  ]    Order
	TiN thin film resistors for monolithic microwave integrated circuits Anna Malmros, Mattias Südow, Kristoffer Andersson, and Niklas Rorsman pp. 912-915 Abstract   Full Text: [ Read Online (HTML)   PDF  (137 kB)  ]    Order
	Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts L. F. Voss, Q. Shao, C. E. Reinhardt, R. T. Graff, A. M. Conway, R. J. Nikolić, Nirmalendu Deo, and Chin Li Cheung pp. 916-920 Abstract   Full Text: [ Read Online (HTML)   PDF  (340 kB)  ]    Order
	Micro- and nanopatterned polymethylmethacrylate layers on plastic poly(ethylene terephthalate) substrates by modified roller-reversal imprint process Chiao-Yang Cheng, Franklin Chau-Nan Hong, and Chun-Yuan Huang pp. 921-925 Abstract   Full Text: [ Read Online (HTML)   PDF  (387 kB)  ]    Order
	Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing Camille Petit-Etienne, Maxime Darnon, Laurent Vallier, Erwine Pargon, Gilles Cunge, François Boulard, Olivier Joubert, Samer Banna, and Thorsten Lill pp. 926-934 Abstract   Full Text: [ Read Online (HTML)   PDF  (358 kB)  ]    Order
	High-resolution transmission-electron microscope characterization of onionlike carbon transformed from nanodiamond Q. Zou, M. Z. Wang, Y. G. Li, and B. Lu pp. 935-939 Abstract   Full Text: [ Read Online (HTML)   PDF  (844 kB)  ]    Order
	Direct-write electron beam lithography in silicon dioxide at low energy Arnaud Beaumont, Christian Dubuc, Jacques Beauvais, and Dominique Drouin pp. 940-945 Abstract   Full Text: [ Read Online (HTML)   PDF  (520 kB)  ]    Order
	Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2 Christoph Ebm, Gerhard Hobler, Simon Waid, and Heinz D. Wanzenboeck pp. 946-951 Abstract   Full Text: [ Read Online (HTML)   PDF  (415 kB)  ]    Order
	Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. I. Process performance and influence on ULK material modification Ming-Shu Kuo, A. R. Pal, G. S. Oehrlein, P. Lazzeri, and M. Anderle pp. 952-960 Abstract   Full Text: [ Read Online (HTML)   PDF  (370 kB)  ]    Order
	Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. II. Interaction with preceding fluorocarbon plasma ultralow k etching processes Ming-Shu Kuo, A. R. Pal, G. S. Oehrlein, and Xuefeng Hua pp. 961-967 Abstract   Full Text: [ Read Online (HTML)   PDF  (390 kB)  ]    Order
	Degradation behavior of release layers for nanoimprint lithography formed on atomically flat Si(111) terraces Kosuke Kuwabara, Akihiro Miyauchi, and Hiroyuki Sugimura pp. 968-972 Abstract   Full Text: [ Read Online (HTML)   PDF  (639 kB)  ]    Order
	Line-width dependency on electromigration performance for long and short copper interconnects Yi-Lung Cheng, We-Yuan Chang, and Ying-Lang Wang pp. 973-977 Abstract   Full Text: [ Read Online (HTML)   PDF  (407 kB)  ]    Order
	Silicon on insulator nanoscale backside interconnects for atomic and molecular scale circuits Ma Han Thu Lwin, Thet Naing Tun, Hui Hui Kim, R. S. Kajen, N. Chandrasekhar, and C. Joachim pp. 978-984 Abstract   Full Text: [ Read Online (HTML)   PDF  (1594 kB)  ]    Order
	Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill, Damon B. Farmer, Marcus Freitag, Yanning Sun, Shu-Jen Han, Zhihong Chen, Keith A. Jenkins, Yu Zhu, Zihong Liu, Timothy J. McArdle, John A. Ott, Robert Wisnieff, and Phaedon Avouris pp. 985-992 Abstract   Full Text: [ Read Online (HTML)   PDF  (652 kB)  ]    Order
	Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry F. Weilnboeck, R. L. Bruce, S. Engelmann, G. S. Oehrlein, D. Nest, T.-Y. Chung, D. Graves, M. Li, D. Wang, C. Andes, and E. A. Hudson pp. 993-1004 Abstract   Full Text: [ Read Online (HTML)   PDF  (1146 kB)  ]    Order
	Device characteristics of HfON charge-trap layer nonvolatile memory Tackhwi Lee and Sanjay K. Banerjee pp. 1005-1010 Abstract   Full Text: [ Read Online (HTML)   PDF  (248 kB)  ]    Order
	GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide A. Y. Polyakov, A. V. Markov, M. P. Duhnovsky, M. V. Mezhennyi, A. A. Donskov, S. S. Malakhov, A. V. Govorkov, Yu. P. Kozlova, V. F. Pavlov, N. B. Smirnov, T. G. Yugova, A. I. Belogorokhov, I. A. Belogorokhov, A. K. Ratnikova, Yu. Yu. Fyodorov et al. pp. 1011-1015 Abstract   Full Text: [ Read Online (HTML)   PDF  (388 kB)  ]    Order
	Enhanced electron-field emission from nanodiamond ridge-structured emission arrays capped on micropatterned silicon pillars N. Ghosh, W. P. Kang, J. L. Davidson, and S. Raina pp. 1016-1019 Abstract   Full Text: [ Read Online (HTML)   PDF  (307 kB)  ]    Order
	Modified postannealing of the Ge condensation process for better-strained Si material and devices Xuyan Liu, Xiaobo Ma, Xiaofeng Du, Weili Liu, Zhitang Song, and Chenglu Lin pp. 1020-1025 Abstract   Full Text: [ Read Online (HTML)   PDF  (806 kB)  ]    Order
	Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry M. Prunnila, M. Meschke, D. Gunnarsson, S. Enouz-Vedrenne, J. M. Kivioja, and J. P. Pekola pp. 1026-1029 Abstract   Full Text: [ Read Online (HTML)   PDF  (923 kB)  ]    Order
	Holographic realization of hexagonal two dimensional photonic crystal structures with elliptical geometry Yung-Jr Hung, San-Liang Lee, Yen-Ting Pan, Brian J. Thibeault, and Larry A. Coldren pp. 1030-1038 Abstract   Full Text: [ Read Online (HTML)   PDF  (1258 kB)  ]    Order
	a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers A. Y. Polyakov, A. V. Markov, M. V. Mezhennyi, A. A. Donskov, S. S. Malakhov, A. V. Govorkov, Yu. P. Kozlova, V. F. Pavlov, N. B. Smirnov, T. G. Yugova, I.-H. Lee, J. Han, Q. Sun, and S. J. Pearton pp. 1039-1043 Abstract   Full Text: [ Read Online (HTML)   PDF  (247 kB)  ]    Order
	Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Chih-Yang Chang, Travis Anderson, Jennifer Hite, Liu Lu, Chien-Fong Lo, Byung-Hwan Chu, D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, Patrick Whiting, R. Holzworth, K. S. Jones, Soohwan Jang et al. pp. 1044-1047 Abstract   Full Text: [ Read Online (HTML)   PDF  (525 kB)  ]    Order
	Spatial coherence in electron-beam patterning Ginusha M. Perera, Gila E. Stein, and J. Alexander Liddle pp. 1048-1055 Abstract   Full Text: [ Read Online (HTML)   PDF  (421 kB)  ]    Order
	Effects of nanoscale Ni, Al, and Ni–Al interlayers on nucleation and growth of diamond on Si Y. S. Li, Y. Tang, Q. Yang, and A. Hirose pp. 1056-1059 Abstract   Full Text: [ Read Online (HTML)   PDF  (422 kB)  ]    Order
	Electron emission from silicon tip arrays controlled by np junction minority carrier injection Robert M. Young, Harvey C. Nathanson, Robert S. Howell, Eric J. Stewart, Bettina A. Nechay, Timothy T. Braggins, Eric M. Graves, Stephen D. Van Campen, R. Christopher Clarke, Scott B. Miserendino, and Jonathan Hawk pp. 1060-1065 Abstract   Full Text: [ Read Online (HTML)   PDF  (353 kB)  ]    Order
Brief Reports and Comments
	Investigation of the behavior of serum and plasma in a microfluidics system J. Caroline Henderson, Michele Yacopucci, ChangJu Chun, Keith Lenghaus, Frank Sommerhage, and James J. Hickman pp. 1066-1069 Abstract   Full Text: [ Read Online (HTML)   PDF  (102 kB)  ]    Order
	Comparative study on the nonperiodic and periodic gratings for scanning probe microscopy drift measurements Dun Niu, Jiawen Li, Yuhang Chen, and Wenhao Huang pp. 1070-1072 Abstract   Full Text: [ Read Online (HTML)   PDF  (392 kB)  ]    Order

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