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1. | Editorial Board Page IFC |
Letters |
2. | Improved characteristics of Gd2O3 nanocrystal memory with substrate high–low junction Pages 1493-1496 Jer-Chyi Wang, Chih-Ting Lin, Chao-Sung Lai, Jui-Lin Hsu, Chi-Fong Ai |
3. | Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors Pages 1497-1499 S.W. Tsao, T.C. Chang, S.Y. Huang, M.C. Chen, S.C. Chen, C.T. Tsai, Y.J. Kuo, Y.C. Chen, W.C. Wu |
4. | Extraction of trap densities in poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on temperature and time of post annealing Pages 1500-1504 Mutsumi Kimura |
Regular Papers |
5. | Modelling and optimization of III/V transistors with matrices of nanowires Original Research Article Pages 1505-1510 Christian Larsen, Mats Ärlelid, Erik Lind, Lars-Erik Wernersson |
6. | Multiple steady state current–voltage characteristics in drift–diffusion modelisation of N type and semi-insulating GaAs Gunn structures Original Research Article Pages 1511-1519 J.C. Manifacier |
7. | Thermal design and analysis of multi-chip LED module with ceramic substrate Original Research Article Pages 1520-1524 Luqiao Yin, Lianqiao Yang, Weiqiao Yang, Yansheng Guo, Kejun Ma, Shuzhi Li, Jianhua Zhang |
8. | Performance and analytical modeling of Metal–Insulator-Metal Field Controlled Tunnel Transistors Original Research Article Pages 1525-1531 M. Ferrier, D. Zhang, P. Griffin, R. Clerc, S. Monfray, T. Skotnicki, Yoshio Nishi |
9. | Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode Original Research Article Pages 1532-1535 Miin-Horng Juang, Y.S. Peng, J.L. Wang, D.C. Shye, C.C. Hwang, S.-L. Jang |
10. | Deep micro-machining of poly-ethylene terephthalate for plastic MEMS applications Original Research Article Pages 1536-1542 H. Pajouhi, S. Mohajerzadeh, F. Nayeri, Z. Sanaee |
11. | Investigation of carbon nanotube field emitter geometry for increased current density Original Research Article Pages 1543-1548 Jeremy L. Silan, Darrell L. Niemann, Bryan P. Ribaya, Mahmud Rahman, M. Meyyappan, Cattien V. Nguyen |
12. | Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers Original Research Article Pages 1549-1553 Wang Zhang, Nuri W. Emanetoglu, Neal Bambha, Justin R. Bickford |
13. | Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments Original Research Article Pages 1554-1560 K.C. Praveen, N. Pushpa, Y.P. Prabakara Rao, G. Govindaraj, John D. Cressler, A.P. Gnana Prakash |
14. | The low leakage current in floating body GaN metal oxide semiconductor field effect transistors Original Research Article Pages 1561-1565 Tatsuya Fujishima, Hirotaka Otake, Yasushi Nanishi, Hiroaki Ohta |
15. | Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling Original Research Article Pages 1566-1571 Kejun Xia, Guofu Niu |
16. | Performance optimization of conventional MOS-like carbon nanotube FETs with realistic contacts based on stair-case doping strategy Original Research Article Pages 1572-1577 Zhou Hai-liang, Zhang Min-xuan, Hao Yue |
17. | Patch antenna coupled 0.2 THz TUNNETT oscillators Original Research Article Pages 1578-1581 Sundararajan Balasekaran, Kazuomi Endo, Tadao Tanabe, Yutaka Oyama |
18. | Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode Original Research Article Pages 1582-1585 Ji-Hyuk Choi, Sachindra Nath Das, Kyeong-Ju Moon, Jyoti Prakash Kar, Jae-Min Myoung |
19. | Analytical modeling of quantum threshold voltage for triple gate MOSFET Original Research Article Pages 1586-1591 P. Rakesh Kumar, Santanu Mahapatra |
20. | Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs Original Research Article Pages 1592-1597 M. Rodrigues, J.A. Martino, A. Mercha, N. Collaert, E. Simoen, C. Claeys |
21. | Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions Original Research Article Pages 1598-1601 Siyang Liu, Weifeng Sun, Qinsong Qian, Jing Zhu |
22. | Effects of arsenic-ion beam density on defect evolution in polysilicon films Original Research Article Pages 1602-1605 Lu-Chang Chen, Shang-Fu Chen, Meng-Chyi Wu |
23. | Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level Original Research Article Pages 1606-1612 A. Roldán, C. Reig, M.D. Cubells-Beltrán, J.B. Roldán, D. Ramírez, S. Cardoso, P.P. Freitas |
24. | Molecular electronic device based on pH indicator by ab initio and non-equilibrium Green function methodology Original Research Article Pages 1613-1616 Ewerton Ramos Granhen, Denille Brito de Lima, Fabricio Macedo Souza, Antonio Carlos Ferreira Seridonio, Jordan Del Nero |
25. | Resistance blow-up effect in micro-circuit engineering Original Research Article Pages 1617-1624 Michael L.P. Tan, Tanuj Saxena, Vijay K. Arora |
26. | Magnetoconcentration effect of a bipolar magnetotransistor formed in a diffusion well Original Research Article Pages 1625-1631 R.D. Tikhonov |
27. | Low-temperature characteristics of a-Si:H thin-film transistor under mechanical strain Original Research Article Pages 1632-1636 S.W. Tsao, T.C. Chang, P.C. Yang, M.C. Wang, S.C. Chen, J. Lu, T.S. Chang, W.C. Kuo, W.C. Wu, Y. Shi |
28. | Voltage-controlled multiple-valued logic design using negative differential resistance devices Original Research Article Pages 1637-1640 Kwang-Jow Gan, Cher-Shiung Tsai, Yan-Wun Chen, Wen-Kuan Yeh |
29. | Multiple-finger turn-on uniformity in silicon-controlled rectifiers Original Research Article Pages 1641-1643 You Li, Juin J. Liou |
30. | Investigation of impact of shallow trench isolation on SONOS type memory cells Original Research Article Pages 1644-1649 Yue Xu, Feng Yan, DunJun Chen, Yi Shi, ZhiGuo Li, Fan Yang, Joshua Wang, YongGang Wang, Peter Lin, Jianguang Chang, Champion Yi |
31. | The surface energy-dictated initial growth of a pentacene film on a polymeric adhesion layer for field-effect transistors Original Research Article Pages 1650-1656 Jaehoon Park, Jin-Hyuk Bae, Won-Ho Kim, Sin-Doo Lee, Jin Seog Gwag, Dong Wook Kim, Jeong Cheol Noh, Jong Sun Choi |
32. | Modifying electronic properties at the silicon–molecule interface using atomic tethers Original Research Article Pages 1657-1664 Christina A. Hacker |
33. | Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs Original Research Article Pages 1665-1668 W.C. Kao, A. Ali, E. Hwang, S. Mookerjea, S. Datta |
34. | On the accuracy of current TCAD hot carrier injection models in nanoscale devices Original Research Article Pages 1669-1674 Alban Zaka, Quentin Rafhay, Matteo Iellina, Pierpaolo Palestri, Raphaël Clerc, Denis Rideau, Davide Garetto, Erwan Dornel, Julien Singer, Georges Pananakakis, Clément Tavernier, Hervé Jaouen |
35. | Robust memory cell cylinder capacitor with cross double patterning technology Original Research Article Pages 1675-1679 Seong-Goo Kim, Cheon Bae Kim |
36. | An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET’s with experimental demonstration Original Research Article Pages 1680-1685 Jaehoon Park, Ayse M. Ozbek, Lei Ma, Matthew T. Veety, Michael P. Morgensen, Douglas W. Barlage, Virginia D. Wheeler, Mark A.L. Johnson |
37. | Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure Original Research Article Pages 1686-1689 M.H. Juang, Y.S. Peng, J.L. Wang, D.C. Shye, C.C. Hwang, S.L. Jang |
Short Communications |
38. | Diamond MOSFET: An innovative layout to improve performance of ICs Pages 1690-1696 Salvador Pinillos Gimenez |
39. | Theoretical and experimental investigation into environment dependence and electric properties for volatile memory based on methyl-red dye thin film Pages 1697-1700 Marcos A.L. Reis, Tamires C.S. Ribeiro, Carlos E. Cava, Lucimara S. Roman, Jordan Del Nero |
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