ScienceDirect Topic Alert: Nanoscience and Technology

Topic Alert: 50 New articles Available on ScienceDirect

Name of Alert:   Physics and astronomy : Nanoscience and Technology View Details Modify or Remove My Alerts     1. Electrochemical Fabrication of Cu(OH)2 and CuO Nanostructures and Their Catalytic Property   Original Research Article Journal of Crystal Growth, In Press, Accepted Manuscript, Available online 2 June 2011 Hai Ming, Keming Pan, Yang Liu, Haitao Li, Xiaodie He, Jun Ming, Zheng Ma, Zhenhui Kang Highlights ► Electrochemical fabrication of uniform Cu(OH)2 and CuO nanostructures. ► The formation mechanism of Cu(OH)2 nanowires and CuO nanostructures was proposed. ► CuO nanostructures exhibited good catalytic ability on the C-N cross coupling.     2. Luminescence of copper nanoparticles   Original Research Article Journal of Luminescence, In Press, Accepted Manuscript, Available online 2 June 2011 Ratan Das, Siddartha S. Nath, Ramendu Bhattacharjee     3. Amorphous and nanostructured silica and aluminosilicate spray-dried microspheres   Original Research Article Journal of Molecular Structure, In Press, Accepted Manuscript, Available online 2 June 2011 M. Todea, R.V.F. Turcu, B. Frentiu, M. Tamasan, H. Mocuta, O. Ponta, S. Simon Highlights ► The study is focused on development of nanocrystals on amorphous microspheres. The nanostructure is significant to biomedical applications. ► The nucleation induced by heat treatment starts on particle surface. ► The microspheres break down when they become highly crystalline. ► First NMR studies on spray dried aluminosilicate microspheres.     4. Controlled 1-D to 3-D growth mode transition of GaN nanostructures and their optical properties   Original Research Article Physica E: Low-dimensional Systems and Nanostructures, In Press, Accepted Manuscript, Available online 2 June 2011 D. Sathish Chander, J. Ramkumar, S. Dhamodaran Graphical abstract The shape of nanostructures can be controlled to form a 1-D nanowire or a 3-D polyhedron depending on the growth conditions. 3-D polyhedrons show intense red luminescence and nanowires show intense yellow luminescence. These results will be useful for the fabrication of GaN nano-photonic devices. Highlights ► Controlled 1D to 3D growth mode transition in GaN nano-structures. ► The growth direction of 3D nanostructures were polar and nanowires were non-polar. ► Intense yellow and red luminescence from GaN nanowires and polyhedrons respectively. ► Red luminescence is due to nitrogen vacancies related defect complexes.     5. Synthesis, field emission and humidity sensing characteristics of monoclinic VO2 nanostructures   Original Research Article Physica E: Low-dimensional Systems and Nanostructures, In Press, Accepted Manuscript, Available online 2 June 2011 Haihong Yin, Juan Ni, Wentao Jiang, Zhengli Zhang, Ke Yu Graphical Abstract Different VO2 (M1) nanostructures were synthesized and were evaluated using XRD, SEM and TEM. Field emission and humidity sensing measurement of them showed good field emission performance and fast humidity response speed. Highlights ► VO2(M1) nanorods, nanoflakes, nanoflowers and nanospheres were synthesized. ► Field emission measurement showed good field emission properties of them. ► Humidity sensing measurement for nanoflowers shows faster response speed.     6. Transmission-dispersion characteristics of waveguide-coupled photonic crystal two-mode nanocavity embedding three tunnel-coupled quantum dots    Physics Letters A, In Press, Accepted Manuscript, Available online 2 June 2011 Rong Yu, Jiahua Li, Chunling Ding, Xiaoxue Yang Highlights ► High optical transmission-dispersion characteristics of a hybrid system is stuidied. ► Multiple EIT-like effect and anomalous dispersion can be created in a low-Q regime. ► Transmission spectra and phase shift can be controlled by engineering QD properties. ► This work offers a promising way to realize integrated photonic devices on a chip.     7. Nanostructures on GaAs surfaces due to 60 keV Ar+-ion beam sputtering   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 1 June 2011 V. Venugopal, Sandeep Kumar Garg, Tanmoy Basu, Om Prakash Sinha, D. Kanjilal, S.R. Bhattacharyya, T. Som     8. Thermal Shock Induced Nanocrack as High Efficiency Surface Conduction Electron Emitter   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 1 June 2011 Bangdao Chen, Hongzhong Liu, Hongtao Wang, Fan Fan, Li Wang, Yucheng Ding, Bingheng Lu     9. Preparation of positively charged oil/water nano-emulsions with a sub-PIT method   Original Research Article Journal of Colloid and Interface Science, In Press, Accepted Manuscript, Available online 1 June 2011 Zhen Mei, Shangying Liu, Lei Wang, Jingjing Jiang, Jian Xu, Dejun Sun Graphical abstract Positively charged oil/water nano-emulsions were prepared in a mixed cationic-nonionic surfactant system using a low energy one-step sub-PIT method, where the PIT is reduced by addition of an inorganic salt. Highlights ► Positively charged O/W nano-emulsions were prepared by a low energy sub-PIT method. ► The addition of NaBr can reduce the higher PIT of the systems caused by CTAB. ► Mechanism of the method is solubilization of oil into swollen micelles above the TCB. ► The obtained O/W nano-emulsions have tunable zeta potential and long-term stability.     10. Efficient distributed moisture-ingress sensing using diamond-like carbon-nanocoated long-period gratings   Original Research Article Optics Communications, In Press, Uncorrected Proof, Available online 1 June 2011 Wojtek J. Bock, Tinko Eftimov, Mateusz Smietana, Predrag Mikulic     11. Characterization of nanocomposite polymer electrolyte based on P(ECH - EO)   Original Research Article Physica B: Condensed Matter, In Press, Accepted Manuscript, Available online 1 June 2011 H. Nithya, S. Selvasekarapandian, P. Christopher Selvin, D. Arun Kumar, M. Hema, D. Prakash     12. Free vibration analysis of functionally graded carbon nanotubes with variable thickness by differential quadrature method   Original Research Article Physica E: Low-dimensional Systems and Nanostructures, In Press, Accepted Manuscript, Available online 1 June 2011 Maziar Janghorban, Amin Zare Graphical Abstract Free vibration analysis of functionally graded carbon nanotube with variable thickness based on Timoshenko beam theory is investigated. Highlights ► The free vibration analysis of functionally graded carbon nanotube with variable thickness is investigated. ► The material properties are assumed to be graded in the longitudinal direction. ► Differential quadrature method (DQM) is adopted to solve the equations of motion.     13. Numerical Study of Quantum Transport in the double-gate graphene nanoribbon field effect transistors   Original Research Article Physica E: Low-dimensional Systems and Nanostructures, In Press, Accepted Manuscript, Available online 1 June 2011 Hakimeh Mohammadpour, Asghar Asgari Graphical Abstract A GNR-FET with different lengths of the channel are studied by self-consistently solving the nonequilibrium Green’s function transport equation in an atomistic basis set with a 3-D Poisson equation. Fig., IS–D versus Vgate for different values of the channel length and doping with Vdrain=0.3V. Highlights ► The ballistic performance of armchair graphene nanoribbon (GNR)-FET with doped source and drain at different lengths of the channel are studied by self-consistently solving the nonequilibrium Green’s function (NEGF) transport equation in an atomistic basis set with a 3-D Poisson equation. ► The source-drain current for simulated GNR-FET shows length-independent over-the-barrier ballistic transport at high gate-voltages, while at low gate voltages, direct source to drain under-the-barrier tunnelling results in decreased amount of the current with increasing the length of the channel. ► At low doping the over-the-barrier ballistic current is dominant while at high doping because of the large shift of the conduction band at the source and drain contacts, under-the-barrier tunnelling current is dominant. ► The cut-off frequency decreases by increasing the channel length as is the case for traditional MOSFETs. The increased frequency with decreasing the doping is another result that arises from the short channel effects on the potential profile of ballistic nano graphene FETs.     14. Interaction of NH3 with Aluminum Nitride Nanotube: Electrostatic vs Covalent   Original Research Article Physica E: Low-dimensional Systems and Nanostructures, In Press, Accepted Manuscript, Available online 1 June 2011 Ali Ahmadi, Javad Beheshtian, Nasser L. Hadipour Graphical Abstract A schematic presentation of NH3 adsorption on aluminum nitride nanotubes. Highlights ► Investigating the NH3 adsorption capability of AlNNTs. ► Morokuma, NBO and DOSs analyses on the nature of N–Al binding interaction in the NH3/AlNNT system. ► Effect of NH3 adsorption, on the electronic properties of AlNNT.     15. Enhancement of thermoelectric figure-of-merit in laterally-coupled nanowire arrays    Physics Letters A, In Press, Accepted Manuscript, Available online 1 June 2011 Yiqun Zhang, Yi Shi, Lin Pu, Junzhuan Wang, Lijia Pan, Youdou Zheng Highlights ► A high ZT value is predicted in the lateral-coupling nanowire arrays. ► The lattice thermal conductivity is dramatically reduced in the lateral direction of nanowire arrays. ► The electron transport is preserved in the lateral direction due to the coupling effect. ► The ZT value is largely enhanced as the nanowire volume fraction exceeds some critical point.     16. Voltage-driven electronic transport and shot noise in armchair graphene nanoribbons    Physics Letters A, In Press, Accepted Manuscript, Available online 1 June 2011 Jian-Hui Yuan, Ze Cheng, Jian-Jun Zhang, Qi-Jun Zeng, Jun-Pei Zhang Highlights ► This manuscript reports that “voltage-driven electronic transport in armchair grapheme nanoribbons”. This is new and interesting topic. ► The conductivity minimum can change by tuning the voltage. ► Quantum oscillations can be tuned by the gate voltage and separated by tuning the barrier voltage.     17. Non-equilibrium effects in the magnetic behavior of Co3O4 nanoparticles    Solid State Communications, In Press, Accepted Manuscript, Available online 1 June 2011 Vijay Bisht, K.P. Rajeev Highlights ► Magnetic behavior of Co3O4 nanoparticles is unique among AFM nanoparticles which enter into a blocked state above . ► Strangely, ZFC peak, is also the bifurcation temperature, and is independent of the magnetic field. ► Aging and memory are observed only in FC and not in ZFC protocol which rules out spin glass behavior. ► We report using specific heat measurements for this system.     18. Quantitative magnetic force microscopy on permalloy dots using an iron filled carbon nanotube probe   Original Research Article Ultramicroscopy, In Press, Accepted Manuscript, Available online 1 June 2011 F. Wolny, Y. Obukhov, T. Mühl, U. Weißker, S. Philippi, A. Leonhardt, P. Banerjee, A. Reed, G. Xiang, R. Adur, I. Lee, A.J. Hauser, F.Y. Yang, D.V. Pelekhov, B. Büchner, P.C. Hammel Highlights ► An Fe-filled carbon nanotube (FeCNT) probe offers compelling advantages for quantitative MFM. ► An FeCNT magnetic probe tip is accurately described as a magnetic monopole. ► The monopole model of the FeCNT magnetic probe has been experimentally validated. ► We present quantitative MFM measurements with 40 nm spatial resolution using a FeCNT probe     19. Carbon nanosheets by microwave plasma enhanced chemical vapor deposition in CH4-Ar system   Original Research Article Applied Surface Science, In Press, Accepted Manuscript, Available online 31 May 2011 Zhipeng Wang, Mao Shoji, Hironori Ogata     20. Effects of soft layer softness on the magnetic properties of perpendicular exchange-coupled nanocomposite films   Original Research Article Journal of Magnetism and Magnetic Materials, In Press, Accepted Manuscript, Available online 31 May 2011 Rujun Tang, Sherlyn Chua, Wanli Zhang, Yanrong Li Highlights ► Both remanence ratio and coercivity of the ECC films reduced with an increase in soft layer thickness. ► The reduction of coercivity was confirmed by the facts that for the ECC with Co soft layer. ► The coercivity of ECC film was controlled by the reversal mechanism inside the ECC grains.     21. Synthesis of single-crystalline α-MnO2 nanotubes and structural characterization by HRTEM   Original Research Article Materials Science and Engineering: B, In Press, Uncorrected Proof, Available online 31 May 2011 Hongju Li, Wen-lou Wang, Fangfang Pan, Xiaodong Xin, Qinqin Chang, Xianming Liu     22. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics   Original Research Article Materials Science and Engineering: B, In Press, Uncorrected Proof, Available online 31 May 2011 N. Govindaraju, R.N. Singh Highlights ► Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. ► Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. ► Temperatures below 290 °C for Si devices and 320 °C for HEMTs prevent metal damage. ► Development of novel NCD-based thermal management for power electronics feasible.     23. Facile synthesis of MnO2/CNT nanocomposite and its electrochemical performance for supercapacitors   Original Research Article Materials Science and Engineering: B, In Press, Uncorrected Proof, Available online 31 May 2011 Hongjuan Wang, Cheng Peng, Feng Peng, Hao Yu, Jian Yang Highlights ► MnO2/CNTs are prepared by direct redox reaction between KMnO4 and carbon nanotubes. ► This preparation method is a simple and green without any other additives. ► MnO2/CNTs show specific capacitance of 162.2 F g−1 at the current density of 0.2 A g−1. ► MnO2/CNTs exhibit excellent charge–discharge property.     24. Chemomechanical properties and microstructural stability of nanocrystalline Pr-doped ceria: An in situ X-ray diffraction investigation   Original Research Article Solid State Ionics, In Press, Corrected Proof, Available online 31 May 2011 Y. Kuru, S.R. Bishop, J.J. Kim, B. Yildiz, H.L. Tuller Research highlights ► The chemomechanical properties of PrxCe1 − xO2 − δ (PCO) were studied by in-situ XRD. ► The properties of nanocrystalline and coarse-grained PCO were similar. ► The thermal expansion showed different characteristics below 400 and above 1000 °C. ► The microstructure of the nanocrystalline powders was stable up to 800 °C in air.     25. A study of nanoscale TiB2 precipitation during titanium silicidation using atom probe tomography   Original Research Article Thin Solid Films, In Press, Accepted Manuscript, Available online 31 May 2011 K. Wedderhoff, C.A. Kleint, A. Shariq, S. Teichert

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ScienceDirect Alert: Solid-State Electronics, Vol. 62, Iss. 1, 2011

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 62, Issue 1,  Pages 1-202 (August 2011) Modify or Remove My Alerts

1.

Editorial Board    Page IFC

Letter

2.

Tunneling coefficient for GaN Schottky barrier diodes    Pages 1-4 A. Merve Ozbek, B. Jayant Baliga

Regular Papers

3.

Atomistic and electrical simulations of a GaN–AlN–(4H)SiC heterostructure optically-triggered vertical power semiconductor device   Original Research Article Pages 5-13 Srikanta Bose, Sudip K. Mazumder Highlights ► Molecular dynamics simulation is conducted for the GaN–AlN–(4H)SiC heteroepitaxial system. ► The density of states at the Fermi-level for 1 nm of AlN as the interface material is observed. ► The above favors to the possibility of vertical electrical conduction across the heterostructure. ► To verify the atomistic study, an electrical simulation is carried out for a vertical NPN device. ► GaN/(4H)SiC vertical NPN device shows better switching characteristics over all-(4H)SiC device.

4.

Efficiency improvement of polymer light-emitting devices using titanium and titanium dioxide as electron injecting layers   Original Research Article Pages 14-18 Mariya Aleksandrova, Milka Rassovska, Georgy Dobrikov Highlights ► In this study we examined titanium and titanium dioxide as electron injecting layers in polymer light-emitting devices. ► We established efficiency improvement in comparison with the device without electron injecting layer. ► We concluded that the performance of the device with a Ti/Al cathode is less sensitive to the injection layer thickness. ► We found that these bilayer cathodes are very effective to be used together with different electroluminescent polymers. ► We ascribed the good performance to the suitable energy level alignment and low contact resistance.

5.

Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs   Original Research Article Pages 19-24 Aritra Dey, David R. Allee, Lawrence T. Clark Highlights ► This paper studies the impact of drain bias stress, under fixed gate bias in a-IZO TFTs. ► The change in VT is more for higher drain bias. ► Both subthreshold slope and transfer characteristics change but recover when left unstressed. ► The degradation follows logarithmic model, associated with charge trapping. ► All observations point to charge trapping as degradation mechanism.

6.

Electrical properties of metal–ferroelectric–insulator–semiconductor structure using BaxSr1−xTiO3 for ferroelectric–gate field effect transistor   Original Research Article Pages 25-30 Ala’eddin A. Saif, P. Poopalan Highlights ► The memory window width increases with the increase both of Ba content and film thickness. ► The memory window increases as the applied voltage increases. ► The low value of the leakage current indicates the good insulating characteristics of the films.

7.

A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates   Original Research Article Pages 31-39 Darsen D. Lu, Mohan V. Dunga, Chung-Hsun Lin, Ali M. Niknejad, Chenming Hu Research highlights ► A computationally efficient approximation for surface potential in FDSOI MOSFETs is developed. ► I–V and C–V models for FDSOI MOSFETs are derived without making the charge sheet approximation. ► The core model and non-ideal effect expressions are implemented in Verilog-A language. ► The model is symmetric with respect to Vds = 0 and continuous in all regions of operation.

8.

Bipolar resistive switching of chromium oxide for resistive random access memory   Original Research Article Pages 40-43 Shih-Cheng Chen, Ting-Chang Chang, Shih-Yang Chen, Chi-Wen Chen, Shih-Ching Chen, S.M. Sze, Ming-Jinn Tsai, Ming-Jer Kao, Fon-Shan Yeh Research highlights ► This study investigates the resistance switching characteristics of Cr2O3-based resistance random access memory (RRAM) with Pt/Cr2O3/TiN and Pt/Cr2O3/Pt structures. Only devices with Pt/Cr2O3/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr2O3 and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr2O3/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 102, on top of that, the retention properties of both states are very stable after 104 seconds with a voltage of −0.2V.

9.

Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors   Original Research Article Pages 44-47 P.M. Tirmali, Anil G. Khairnar, Bhavana N. Joshi, A.M. Mahajan Research highlights ► In this study we have deposited and analyzed the HfO2 as the high-k dielectric for MOS capacitor. ► The AFM studies prove the deposited films are very much smooth and this smoothness improves on annealing. ► It is observed that flat-band voltage (VFB) shifts towards negative potential due to positive trap charge. ► The annealed HfO2 films show very low leakage current of 9.12 × 10−6 A/cm2 at 1V.

10.

An effective thermal circuit model for electro-thermal simulation of SOI analog circuits   Original Research Article Pages 48-61 Ming-C. Cheng, Kun Zhang Highlights ► A thermal circuit model is developed for SOI analog circuits. ► The model integrates a device thermal circuit with interconnect thermal networks. ► The device thermal circuit accounts for non-isothermal effects in SOI devices. ► Thermal networks for cross-coupled and parallel coupled wires are developed. ► The model is coupled with BSIMSOI for electro-thermal simulation of SOI circuits.

11.

Thermally generated leakage current mechanisms of metal-induced laterally crystallized n-type poly-Si TFTs under hot-carrier stress   Original Research Article Pages 62-66 Zhen Zhu Highlights ► The TG leakage current under the HC stress decreases due to the ‘‘DRME” mechanism. ► The TG leakage current under the HC stress increases due to the “TIE” mechanism. ► The larger the stress-Vd or TFTs’ size is, the easier the “DRME” occurs. ► The increment of the TG leakage current follows the Schottky model. ► The ‘‘DRME” is the dominant mechanism in the TG leakage current under the HC stress.

12.

Study of nitrogen impact on VFB–EOT roll-off by varying interfacial SiO2 thickness   Original Research Article Pages 67-71 Moonju Cho, Amal Akheyar, Marc Aoulaiche, Robin Degraeve, Lars-Åke Ragnarsson, Joshua Tseng, Thomas Y. Hoffmann, Guido Groeseneken Highlights ► VFB increases when interfacial layer decreases due to the higher trap density near the interface. ► Higher concentration of nitrogen atom diffusion introduces higher interfacial trap density. ► The VFB roll-off can be improved by process development reducing nitrogen diffusion.

13.

The performance improvement evaluation for SiGe-based IR detectors   Original Research Article Pages 72-76 M. Kolahdouz, A. Afshar Farniya, M. Östling, H.H. Radamson Research highlights ► The SNR in IR detectors increases significantly by integrating Ni silicide contacts. ► The silicidation slightly improves TCR values for the detectors (+0.22%/K). ► Increasing the Ge content of the wells has the most significant effect on the TCR.

14.

The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors   Original Research Article Pages 77-81 Sangwook Kim, Sunil Kim, Changjung Kim, JaeChul Park, Ihun Song, Sanghun Jeon, Seung-Eon Ahn, Jin-Seong Park, Jae Kyeong Jeong Highlights ► Gate bias instability of a-IGZO TFTs under visible lights (red, green, blue, white and dark). ► Investigating positive and negative gate bias instability effects systematically. ► Compensation effect of the electron carrier trapping and the creation of meta-stable donors via photon excitation.

15.

Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications   Original Research Article Pages 82-89 E. Hwang, S. Mookerjea, M.K. Hudait, S. Datta Highlights ► The scalability of In0.7Ga0.3As QWFETs for 15 nm node and beyond logic applications is investigated. ► Excellent agreements between experimental measurements and drift–diffusion simulation results have been demonstrated. ► The significance of source side injection velocity is emphasized for short channel length III-V QWFETs operating in quasi ballistic mode. ► Of QWFET architectures investigated, double gate QWFET achieves the best logic figure of merit from both transport and scalability standpoint.

16.

Bipolar switching characteristics of low-power Geo resistive memory   Original Research Article Pages 90-93 C.H. Cheng, P.C. Chen, S.L. Liu, T.L. Wu, H.H. Hsu, Albert Chin, F.S. Yeh Highlights ► We demonstrate GeOx RRAM with both cost-effective and ultra-low power. ► Hopping conduction mechanism effectively lowers switched currents. ► Self-compliance switched mode presents from penalties of excess forming current via filaments. ► Size-related switched power enables application of high-density memory.

17.

Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers   Original Research Article Pages 94-98 Z.W. Zhang, C.F. Zhu, W.K. Fong, K.K. Leung, P.K.L. Chan, C. Surya Highlights ► Fabrication of nano-scale SiO2 growth mask using self-formed Ni clusters. ► Growth of the GaN nano-ELOG layer. ► Fabrication of GaN/InGaN multiple quantum wells on top of the nano-ELOG layer. ► Characterization of the optoelectronic properties of the MQW. ► Investigation of hot-electron degradation in the device.

18.

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS   Original Research Article Pages 99-105 Rodrigo Trevisoli Doria, Eddy Simoen, Cor Claeys, João Antonio Martino, Marcelo Antonio Pavanello Research highlights ► HD3 of 2-MOS structures composed by FinFETs reduces with the raise of the gate bias. ► HD3 reduction is more pronounced in narrower and longer devices. ► HD3 is associated to the mobility degradation related to phonon scattering. ► Use of strained FinFETs reduces slightly HD3 and strongly the on-resistance.

19.

Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs   Original Research Article Pages 106-109 Seung Heon Shin, Tae-Woo Kim, Jong-In Song, Jae-Hyung Jang Research highlights ► InP based p-HEMTs were fabricated by using buried-Pt gate on the 6-nm InP layer. ► Pt atoms penetrated the InP layer and made Schottky contact on the InAlAs layer. ► Pt atoms reacted with the InAlAs layer to form a PtAs2 alloy. ► PtAs2 alloy enhanced the Schottky barrier height. ► Buried-Pt gate on the InP layer improved the DC, RF and switching performances.

20.

Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric   Original Research Article Pages 110-114 K. Wolff, U. Hilleringmann Research highlights ► ZnO nanoparticles are used as semiconducting material in low-cost TFT. ► The integration technique is simple and compatible to plastic substrates. ► Inverters based on nanoparticle-TFTs are functional blocks for low-cost circuits. ► The inverter performance is partially superior to competing devices.

21.

MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18 μm CMOS process   Original Research Article Pages 115-122 P. Martin, A.S. Royet, F. Guellec, G. Ghibaudo Research highlights ► Specific physical effects are observed in a cooled (77–200 K) 0.18 μm CMOS process. ► These effects are described and modeled for design of cryogenic IR CMOS imagers. ► Data on low frequency noise and transistor matching in MOSFET are also presented.

22.

Generalization of the van der Pauw relationship derived from electrostatics   Original Research Article Pages 123-127 Jonathan D. Weiss Highlights ► A van der Pauw result is presented for an electrode array smaller than the sample. ► The consequences of this modified arrangement are presented. ► Its disadvantages relative to the original van der Pauw arrangement are discussed. ► As a consequence of this work, a new mathematical relationship has been uncovered. ► This electrostatics technique can be applied to the calculation of the Hall voltage.

23.

Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment   Original Research Article Pages 128-131 Po-Chun Yang, Ting-Chang Chang, Shih-Ching Chen, Hsuan-Hsiang Su, Jin Lu, Hui-Chun Huang, Der-Shin Gan, New-Jin Ho Highlights ► High-pressure oxygen treatments effectively improve the properties of HfO2 film. ► From XPS analyses, the O–Hf and O–Hf–Si bonding energies raise apparently. ► After O2+ UV light treatment, the leakage current density exhibit two orders decrease. ► The conduction mechanism was transformed from trap-assisted tunneling to Schottky emission. ► This low temperature and high pressure oxygen treatment is applicable for the flexible electronics.

24.

Germanium vertical Tunneling Field-Effect Transistor   Original Research Article Pages 132-137 D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer, J. Schulze Highlights ► We report on the first realization of a pure Ge bulk vertical TFET. ► We compare the performance of a pure Ge bulk vTFET with a pure Si bulk vTFET. ► We examine that the main transport mechanism in the vTFETs is due to BTB tunneling.

25.

Study of Shubnikov–de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1−XSb quantum wells   Original Research Article Pages 138-141 Aneesh Nainani, Toshifumi Irisawa, Brian R. Bennett, J. Brad Boos, Mario G. Ancona, Krishna C. Saraswat Highlights ► InGaSb has the highest hole mobility amongst III-V’s which can be enhanced further using strain. ► Strain ; confinement in InGaSb quantum well splits light/heavy hole bands leading to reduction in the hole effective mass. ► Magnetotransport measurements were performed on compressively-strained InGaSb and GaSb quantum wells. ► Hole effective mass was measured using Shubnikov–de Haas oscillations. ► Reduction of effective hole mass with strain was quantified. Experimental data show excellent match with modeling results.

26.

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy   Original Research Article Pages 142-145 Yi-Keng Fu, Yu-Hsuan Lu, Ren-Hao Jiang, Bo-Chun Chen, Yen-Hsiang Fang, Rong Xuan, Yan-Kuin Su, Chia-Feng Lin, Jebb-Fang Chen Highlights ► Near ultraviolet light-emitting diodes with quaternary AlInGaN quantum barriers (QB). ► The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. ► Under 300 mA current injection, the LED output power with Al0.089In0.035Ga0.876N QB can be enhanced by 15.9%. ► A reduction of lattice mismatch induced polarization mismatch in the active layer by using AlInGaN QB.

27.

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation   Original Research Article Pages 146-151 M. Rodrigues, M. Galeti, J.A. Martino, N. Collaert, E. Simoen, C. Claeys Highlights ► HfSiO dielectric/TiN metal gate and rotated layout in MuGFET devices for analog application. ► Thinner TiN metal gate achieve a larger intrinsic voltage gain. ► HfSiON dielectric presented reduced Early voltage resulting in degraded analog behavior. ► MuGFET devices with rotated layout showed larger mobility and smaller Early voltage.

28.

Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide   Original Research Article Pages 152-155 Eiji Miyazaki, Yuji Goda, Shigeru Kishimoto, Takashi Mizutani Highlights ► The performance of Al2O3/AlGaN/GaN MOSHFETs and HfO2/AlGaN/GaN MOSHFETs was compared. ► The fabrication process was identical except the gate oxide deposited by ALD. ► The interface quality was better in Al2O3/AlGaN/GaN MOSHFETs than in HfO2/AlGaN/GaN MOSHFETs. ► The gate leakage current was five to eight orders of magnitude smaller in the Al2O3 MOSHFETs.

29.

Design, fabrication, and evaluation of a 5 F–5 V prototype of solid-state PANI based supercapacitor   Original Research Article Pages 156-160 M.M. Khandpekar, R.K. Kushwaha, S.P. Pati Graphical abstract The fabricated 5 F- 5V prototype of supercapacitor. Highlights ► A 5 F–5 V prototype supercapacitor based on cross linked polymer electrolyte (PANI) and XSPEEK. ► Scale-up from a small single cell to a larger stack prototype of a solid-state supercapacitor. ► Shows a higher series resistance than estimated and achieved a specific capacitance of 480 F/g. ► A maximum capacitance of 4.67 F has been obtained for the device. ► Higher capacitance at very low frequencies of order of 0.01 F falling by 25% at 0.1 Hz.

30.

Analysis of “on” and “off” times for thermally driven VO2 metal-insulator transition nanoscale switching devices   Original Research Article Pages 161-164 Yan Zhang, Shriram Ramanathan Highlights ► We estimate the switching characteristics of thermally-driven two-terminal VO2 devices. ►We use a simple resistance-capacitance thermal circuit model to explore the minimum switching time for both heating and cooling processes. ► Our study shows that the estimated switching time is on the order of ∼1ns for 20 nm VO2 films.

31.

Physics-based compact model for ultra-scaled FinFETs   Original Research Article Pages 165-173 Ashkhen Yesayan, Fabien Prégaldiny, Nicolas Chevillon, Christophe Lallement, Jean-Michel Sallese Highlights ► We propose a physical and explicit compact model for lightly doped FinFETs. ► This design-oriented model is valid for a large range of silicon Fin widths/lengths. ► It describes well the drain current, small signal parameters and capacitances. ► It takes into account all short-channel effects and quantum mechanical effects. ► This compact model needs a very few number of electrical parameters (4).

32.

Three-dimensional analytic modelling of front and back gate threshold voltages for small geometry fully depleted SOI MOSFET’s   Original Research Article Pages 174-184 Krishna Meel, R. Gopal, Deepak Bhatnagar Highlights ► New 3-D front (back) gate threshold voltage models of FD-SOI MOSFETs are reported. ► Models solve 3-D Poisson’s equation using Green’s function as a tool. ► 3-D threshold voltage models include side wall, source/drain and back gate effects. ► Front and back gate charge coupling is incorporated in both the threshold voltages. ► Compact models of threshold voltages are amenable to circuit CAD tool.

33.

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate   Original Research Article Pages 185-188 W. Yu, B. Zhang, Q.T. Zhao, J.-M. Hartmann, D. Buca, A. Nichau, R. Lupták, J.M. Lopes, S. Lenk, M. Luysberg, K.K. Bourdelle, X. Wang, S. Mantl Highlights ► We fabricate compressively strained Si0.5Ge0.5 quantum well p-MOSFETs. ► LaLuO3 with k ∼ 30 is successfully integrated in the device as gate dielectric. ► The hole mobility is about 2.5 times higher than the Si universal hole mobility. ► Devices with LaLuO3 and HfO2 show similar hole mobilities. ► The hole mobility degradation with high-k is much less than electrons.

34.

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate   Original Research Article Pages 189-194 V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley Highlights ► Ge surface roughness, relaxation and threading dislocation density are studied. ► A transition from compressive to tensile strain is shown. ► Tensile strain of high temperature layers can be controlled. ► Thin layers show surface roughnesses of the order of 2 Å prior to annealing. ► Thick structures are required for both low surface roughness and a lower TDD.

35.

Mobility analysis of surface roughness scattering in FinFET devices   Original Research Article Pages 195-201 Jae Woo Lee, Doyoung Jang, Mireille Mouis, Gyu Tae Kim, Thomas Chiarella, Thomas Hoffmann, Gérard Ghibaudo Highlights ► Mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. ► The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. ► The contribution of the surface roughness scattering was analysed and that on sidewalls was about three times stronger than on top surface for n-channel FinFETs.

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Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

May 2011

Volume 29, Issue 3, Articles 030601-03C137

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Letters
	Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas K. H. Choi, S. H. Lee, J. H. Park, K. Y. Sohn, J. W. Lee, and S. J. Pearton J. Vac. Sci. Technol. B 29, 030601 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (407 kB)  ]    Order
	Transfer of carbon nanosheet films to nongrowth, zero thermal budget substrates Ronald A. Quinlan, Artjay Javier, Edward E. Foos, Leonard Buckley, Mingyao Zhu, Kun Hou, Erika Widenkvist, Martin Drees, Ulf Jansson, and Brian C. Holloway J. Vac. Sci. Technol. B 29, 030602 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (411 kB)  ]    Order
	Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition: Effect of growth temperature Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Wei Wang, Qi Wang, Yongqing Huang, and Xia Zhang J. Vac. Sci. Technol. B 29, 030603 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (367 kB)  ]    Order
	Surface stiffness modification by e-beam irradiation for stem cell growth control Bing-Rui Lu, Mathieu Lanniel, Morgan Alexandar, Ran Liu, Yifang Chen, and Ejaz Huq J. Vac. Sci. Technol. B 29, 030604 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (397 kB)  ]    Order
	Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers Tonmoy Chakraborty, Daniel Greenslit, and Eric T. Eisenbraun J. Vac. Sci. Technol. B 29, 030605 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1145 kB)  ]    Order
Electronic & Optoelectronic Materials, Devices & Processing
	Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering Myung Soo Huh, Seok-Jun Won, Bong Seob Yang, Seungha Oh, Myeong Sook Oh, Jae Kyeong Jeong, and Hyeong Joon Kim J. Vac. Sci. Technol. B 29, 031201 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (324 kB)  ]    Order
	Novel postetch process to realize high quality photonic crystals in InP N. Shahid, S. Naureen, M. Y. Li, M. Swillo, and S. Anand J. Vac. Sci. Technol. B 29, 031202 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (270 kB)  ]    Order
	Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz Souvik Kundu, Sandipta Roy, P. Banerji, Supratic Chakraborty, and T. Shripathi J. Vac. Sci. Technol. B 29, 031203 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (735 kB)  ]    Order
	Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors Hyeongnam Kim, Michael L. Schuette, and Wu Lu J. Vac. Sci. Technol. B 29, 031204 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (323 kB)  ]    Order
	Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors C. F. Lo, F. Ren, C. Y. Chang, S. J. Pearton, S.-H. Chen, C.-M. Chang, S.-Y. Wang, J.-I. Chyi, and I. I. Kravchenko J. Vac. Sci. Technol. B 29, 031205 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (572 kB)  ]    Order
	Fabrication of high-aspect-ratio lightpipes Winnie N. Ye, Peter Duane, Munib Wober, and Kenneth B. Crozier J. Vac. Sci. Technol. B 29, 031206 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (432 kB)  ]    Order
	Comprehensive comparison of electrical and reliability characteristics of various copper barrier films Yi-Lung Cheng, Jiung Wu, Tai-Jung Chiu, Shiuan-An Chen, and Ying-Lang Wang J. Vac. Sci. Technol. B 29, 031207 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (700 kB)  ]    Order
	Antireflection properties and solar cell application of silicon nanostructures Huihui Yue, Rui Jia, Chen Chen, Wuchang Ding, Yanlong Meng, Deqi Wu, Dawei Wu, Wei Chen, Xinyu Liu, Zhi Jin, Wenwu Wang, and Tianchun Ye J. Vac. Sci. Technol. B 29, 031208 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (714 kB)  ]    Order
	Analysis of charging effects on highly resistive materials under electron irradiation by using transient-absorbed-current method Natsuki Tsuno, Yusuke Ominami, Hiroya Ohta, Hiroyuki Shinada, Hiroshi Makino, and Yoshinobu Kimura J. Vac. Sci. Technol. B 29, 031209 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (255 kB)  ]    Order
	Growth and transport studies of BaMn2As2 thin films Dang Duc Dung, Wuwei Feng, and Sunglae Cho J. Vac. Sci. Technol. B 29, 031210 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (846 kB)  ]    Order
	Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors Chien-Fong Lo, T. S. Kang, L. Liu, F. Ren, S. J. Pearton, Jinhyung Kim, S. Jang, O. Laboutin, Y. Cao, and J. W. Johnson J. Vac. Sci. Technol. B 29, 031211 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (478 kB)  ]    Order
	Ultranarrow bandpass filter with wide nontransmission region composed of randomly distributed layer thicknesses Guibin Chen and Haichun Yu J. Vac. Sci. Technol. B 29, 031212 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (144 kB)  ]    Order
	Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere S.-N. Wu, S.-Q. Yu, D. Ding, S. R. Johnson, and Y.-H. Zhang J. Vac. Sci. Technol. B 29, 031213 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (411 kB)  ]    Order
Energy Conversion and Storage Devices
	Cryogenic thermal simulator for testing low temperature thermophotovoltaic cells Dante F. DeMeo and Thomas E. Vandervelde J. Vac. Sci. Technol. B 29, 031401 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (582 kB)  ]    Order
Nanometer Science & Technology
	Nanostructure and magnetic properties of c-axis oriented L10-FePt nanoparticles and nanocrystalline films on polycrystalline TiN underlayers Yoshiko Tsuji, Suguru Noda, and Shinichi Nakamura J. Vac. Sci. Technol. B 29, 031801 (2011) (10 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1789 kB)  ]    Order
	Electric potential of a metallic nanowall between cathode and anode planes Xizhou Qin, Weiliang Wang, and Zhibing Li J. Vac. Sci. Technol. B 29, 031802 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (252 kB)  ]    Order
	Effects of segregation strength and an external field on the thermal line edge and line width roughness spectra of a diblock copolymer resist August W. Bosse J. Vac. Sci. Technol. B 29, 031803 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (425 kB)  ]    Order
	Polarity controlled InAs{111} films grown on Si(111) Akihiro Ohtake and Kazutaka Mitsuishi J. Vac. Sci. Technol. B 29, 031804 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (322 kB)  ]    Order
	Fabrication of ordered Au nanodot arrays utilizing anodic aluminum oxide templates formed on Si substrate Namyong Kwon, Namkyu Kim, Jekwan Yeon, Geunyoung Yeom, and Ilsub Chung J. Vac. Sci. Technol. B 29, 031805 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1478 kB)  ]    Order
MEMS & NEMS
	Rapid serial prototyping of magnet-tipped attonewton-sensitivity cantilevers by focused ion beam manipulation Jonilyn G. Longenecker, Eric W. Moore, and John A. Marohn J. Vac. Sci. Technol. B 29, 032001 (2011) (8 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (608 kB)  ]    Order
Microelectronic & Nanoelectronic Devices
	Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasma-enhanced chemical vapor deposition dielectrics Adam M. Urbanowicz, Kris Vanstreels, Patrick Verdonck, Els Van Besien, Trompoukis Christos, Denis Shamiryan, Stefan De Gendt, and Mikhail R. Baklanov J. Vac. Sci. Technol. B 29, 032201 (2011) (9 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (729 kB)  ]    Order
	Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy Jun Zhu, Jing Jing, Wenbo Luo, Yin Zhang, and Yanrong Li J. Vac. Sci. Technol. B 29, 032202 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (458 kB)  ]    Order
	Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode Shu-Tong Chang, Chang-Chun Lee, and P.-H. Sun J. Vac. Sci. Technol. B 29, 032203 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (244 kB)  ]    Order
	Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jinhyung Kim, Chih-Yang Chang, Erica A. Douglas, Soohwan Jang, David. J. Smith, S. J. Pearton, Wayne J. Johnson, and Fan Ren J. Vac. Sci. Technol. B 29, 032204 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (405 kB)  ]    Order
	Integration of thin film transistors and vertical thin film field emitter arrays using ion-induced bending Tomoya Yoshida, Takashi Nishi, Masayoshi Nagao, Takashi Shimizu, and Seigo Kanemaru J. Vac. Sci. Technol. B 29, 032205 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (523 kB)  ]    Order
	Increasing the speed of solid-state nanopores Philip S. Waggoner, Aaron T. Kuan, Stas Polonsky, Hongbo Peng, and Stephen M. Rossnagel J. Vac. Sci. Technol. B 29, 032206 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (402 kB)  ]    Order
	Phase change random access memory featuring silicide metal contact and high- interlayer for operation power reduction Lina Wei-Wei Fang, Rong Zhao, Kian-Guan Lim, Hongxin Yang, Luping Shi, Tow-Chong Chong, and Yee-Chia Yeo J. Vac. Sci. Technol. B 29, 032207 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (383 kB)  ]    Order
	Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry Matthieu Py, Jean-Paul Barnes, Rachid Boujamaa, Michael Gros-Jean, Kaoru Nakajima, Kenji Kimura, Charbel Roukoss, Bernard Pelissier, and Narciso Gambacorti J. Vac. Sci. Technol. B 29, 032208 (2011) (9 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (685 kB)  ]    Order
	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors Xingui Zhang, Huaxin Guo, Hau-Yu Lin, Chao-Ching Cheng, Chih-Hsin Ko, Clement H. Wann, Guang-Li Luo, Chun-Yen Chang, Chao-Hsin Chien, Zong-You Han, Shih-Chiang Huang, Hock-Chun Chin, Xiao Gong, Shao-Ming Koh, Phyllis Shi Ya Lim et al. J. Vac. Sci. Technol. B 29, 032209 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (373 kB)  ]    Order
	Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching Tomohiko Sugiyama, Iwao Ohwada, Tsutomu Nanataki, Yukihisa Moriguchi, Osamu Eryu, Masaya Ichimura, and Manabu Gomi J. Vac. Sci. Technol. B 29, 032210 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (372 kB)  ]    Order
	High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm Myungsim Jun, Youngsam Park, Younghoon Hyun, Taehyoung Zyung, Moongyu Jang, and Sung-Jin Choi J. Vac. Sci. Technol. B 29, 032211 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (349 kB)  ]    Order
Brief Reports and Comments
	Gradual pressure release for reliable nanoimprint lithography Jung-Sub Wi, Robert J. Wilson, Robert M. White, and Shan X. Wang J. Vac. Sci. Technol. B 29, 033001 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (337 kB)  ]    Order
27th North American Conference on Molecular Beam Epitaxy
	Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices H. J. Haugan, G. J. Brown, and L. Grazulis J. Vac. Sci. Technol. B 29, 03C101 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (535 kB)  ]    Order
	II-VI heterostructures obtained by encapsulation of colloidal CdSe nanowires by molecular beam epitaxy deposition of ZnSe Xinyu Liu, A. M. Mintairov, J. Herzog, F. Vietmeyer, R. E. Pimpinella, M. Kuno, J. L. Merz, T. H. Kosel, M. Dobrowolska, and J. K. Furdyna J. Vac. Sci. Technol. B 29, 03C102 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (337 kB)  ]    Order
	Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces Paul J. Simmonds, John Simon, Jerry M. Woodall, and Minjoo Larry Lee J. Vac. Sci. Technol. B 29, 03C103 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (305 kB)  ]    Order
	Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs Jason K. Kawasaki, Rainer Timm, Trevor E. Buehl, Edvin Lundgren, Anders Mikkelsen, Arthur C. Gossard, and Chris J. Palmstrøm J. Vac. Sci. Technol. B 29, 03C104 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (446 kB)  ]    Order
	Localized dry-etch substrate thinning for dislocation reduction in heteroepitaxial CdTe/Si(211) R. N. Jacobs, J. K. Markunas, C. Nozaki, M. Jaime-Vasquez, P. J. Smith, J. D. Benson, and J. Pellegrino J. Vac. Sci. Technol. B 29, 03C105 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (473 kB)  ]    Order
	Molecular beam epitaxy growth of InGaN-GaN superlattices for optoelectronic devices Chris Boney, David Starikov, Ivan Hernandez, Rajeev Pillai, and Abdelhak Bensaoula J. Vac. Sci. Technol. B 29, 03C106 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (534 kB)  ]    Order
	AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy W. E. Hoke, T. D. Kennedy, J. J. Mosca, A. J. Kerr, A. Torabi, S. Davis-Hearns, and J. R. LaRoche J. Vac. Sci. Technol. B 29, 03C107 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (487 kB)  ]    Order
	Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy Trevor E. Buehl, Christopher J. Palmstrøm, and Arthur C. Gossard J. Vac. Sci. Technol. B 29, 03C108 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (552 kB)  ]    Order
	Antimonide-based pN terahertz mixer diodes R. Magno, J. G. Champlain, H. S. Newman, and D. Park J. Vac. Sci. Technol. B 29, 03C109 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (253 kB)  ]    Order
	Effect of strain and confinement on the effective mass of holes in InSb quantum wells C. K. Gaspe, M. Edirisooriya, T. D. Mishima, P. A. R. Dilhani Jayathilaka, R. E. Doezema, S. Q. Murphy, M. B. Santos, L. C. Tung, and Y.-J. Wang J. Vac. Sci. Technol. B 29, 03C110 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (421 kB)  ]    Order
	Substrate wobble compensation for in situ spectroscopic ellipsometry measurements Blaine Johs and Ping He J. Vac. Sci. Technol. B 29, 03C111 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (634 kB)  ]    Order
	Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells Sudhakar Bharatan, Shanthi Iyer, Jia Li, Thomas A. Rawdanowicz, and Lewis Reynolds, Jr. J. Vac. Sci. Technol. B 29, 03C112 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (715 kB)  ]    Order
	High power 1.25  µm InAs quantum dot vertical external-cavity surface-emitting laser Alexander R. Albrecht, Christopher P. Hains, Thomas J. Rotter, Andreas Stintz, Kevin J. Malloy, Ganesh Balakrishnan, and Jerome V. Moloney J. Vac. Sci. Technol. B 29, 03C113 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (297 kB)  ]    Order
	Growth and characterization of TbAs:GaAs nanocomposites Laura E. Cassels, Trevor E. Buehl, Peter G. Burke, Chris J. Palmstrøm, Art C. Gossard, Gilles Pernot, Ali Shakouri, Chelsea R. Haughn, Matthew F. Doty, and Joshua M. O. Zide J. Vac. Sci. Technol. B 29, 03C114 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (421 kB)  ]    Order
	Low-misfit epilayer analyses using in situ wafer curvature measurements Ryan France and Aaron J. Ptak J. Vac. Sci. Technol. B 29, 03C115 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (423 kB)  ]    Order
	Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation J. Buschbeck, J. Kawasaki, T. E. Buehl, A. C. Gossard, and C. J. Palmstrøm J. Vac. Sci. Technol. B 29, 03C116 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (369 kB)  ]    Order
	Electrical properties of Er-doped In0.53Ga0.47As Peter G. Burke, Hong Lu, Nicholas G. Rudawski, Susanne Stemmer, Arthur C. Gossard, Je-Hyeong Bahk, and John E. Bowers J. Vac. Sci. Technol. B 29, 03C117 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (840 kB)  ]    Order
	Molecular beam epitaxy of metamorphic InyGa1−yP solar cells on mixed anion GaAsxP1−x/GaAs graded buffers Stephanie Tomasulo, John Simon, Paul J. Simmonds, Jonathan Biagiotti, and Minjoo L. Lee J. Vac. Sci. Technol. B 29, 03C118 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (497 kB)  ]    Order
	Optical measurements of single CdTe self-assembled quantum dots grown on ZnTe/GaSb R. E. Pimpinella, A. M. Mintairov, X. Liu, T. H. Kosel, J. L. Merz, J. K. Furdyna, and M. Dobrowolska J. Vac. Sci. Technol. B 29, 03C119 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (351 kB)  ]    Order
	Two-dimensional III-V nucleation on Si for nonlinear optics Angie C. Lin, James S. Harris, and M. M. Fejer J. Vac. Sci. Technol. B 29, 03C120 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (625 kB)  ]    Order
	Atomic ordering and phase separation in MBE GaAs1−xBix Andrew G. Norman, Ryan France, and Aaron J. Ptak J. Vac. Sci. Technol. B 29, 03C121 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (390 kB)  ]    Order
	Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric W. H. Chang, T. H. Chiang, Y. D. Wu, M. Hong, C. A. Lin, and J. Kwo J. Vac. Sci. Technol. B 29, 03C122 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (413 kB)  ]    Order
	Enhanced normal incidence photocurrent in quantum dot infrared photodetectors Jiayi Shao, Thomas E. Vandervelde, Ajit Barve, Woo-Yong Jang, Andreas Stintz, and Sanjay Krishna J. Vac. Sci. Technol. B 29, 03C123 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (414 kB)  ]    Order
	Epitaxial growth of CoxMnySiz (111) thin films in the compositional range around the Heusler alloy Co2MnSi Liang He, Brian A. Collins, Frank Tsui, and Yong S. Chu J. Vac. Sci. Technol. B 29, 03C124 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (598 kB)  ]    Order
	In situ real time Auger analyses during oxides and alloy growth using a new spectrometer design Philippe G. Staib J. Vac. Sci. Technol. B 29, 03C125 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (719 kB)  ]    Order
	Metamorphic growth of III-V semiconductor bicrystals C. J. K. Richardson, L. He, and S. Kanakaraju J. Vac. Sci. Technol. B 29, 03C126 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (457 kB)  ]    Order
	Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy A. V. Katkov, C. C. Wang, J. Y. Chi, C. Cheng, and A. K. Gutakovskii J. Vac. Sci. Technol. B 29, 03C127 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (505 kB)  ]    Order
	Single-crystalline aluminum grown on MgAl2O4 spinel using molecular-beam epitaxy Y. Lin, A. G. Norman, W. E. McMahon, H. R. Moutinho, C.-S. Jiang, and A. J. Ptak J. Vac. Sci. Technol. B 29, 03C128 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (523 kB)  ]    Order
	Reflection high energy electron diffraction investigation and comparison of the initial stage during molecular beam epitaxy of AlN on Si(111) and Si(110) substrates Vladimir Mansurov, Xiaoyan Xu, Mahesh Pandikunta, Rakib Uddin, and Sergey Nikishin J. Vac. Sci. Technol. B 29, 03C129 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (194 kB)  ]    Order
	Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers S. P. R. Clark, P. Ahirwar, F. T. Jaeckel, C. P. Hains, A. R. Albrecht, T. J. Rotter, L. R. Dawson, G. Balakrishnan, P. E. Hopkins, L. M. Phinney, J. Hader, and J. V. Moloney J. Vac. Sci. Technol. B 29, 03C130 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (258 kB)  ]    Order
	Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation A. Posadas, R. Dargis, M. R. Choi, A. Slepko, A. A. Demkov, J. J. Kim, and D. J. Smith J. Vac. Sci. Technol. B 29, 03C131 (2011) (6 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (849 kB)  ]    Order
	High In content InxGa1−xN grown by energetic neutral atom beam lithography and epitaxy under slightly N-rich conditions Todd L. Williamson, Joshua J. Williams, Jonathan C. D. Hubbard, and Mark A. Hoffbauer J. Vac. Sci. Technol. B 29, 03C132 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (459 kB)  ]    Order
	Atomic-scale modeling of InxGa1−xN quantum dot self-assembly Zhenli Zhang, Alok Chatterjee, Christoph Grein, Anthony J. Ciani, and Peter W. Chung J. Vac. Sci. Technol. B 29, 03C133 (2011) (7 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (1409 kB)  ]    Order
	Growth of AlGaN containing nanometer scale compositional inhomogeneities for ultraviolet light emitters A. V. Sampath, G. A. Garrett, R. W. Enck, P. Rottella, Jr., H. Shen, and M. Wraback J. Vac. Sci. Technol. B 29, 03C134 (2011) (4 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (243 kB)  ]    Order
	High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy Marta Sawicka, Anna Feduniewicz-Żmuda, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Marcin Kryśko, Igor Dzicielewski, Izabella Grzegory, and Czesaw Skierbiszewski J. Vac. Sci. Technol. B 29, 03C135 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (420 kB)  ]    Order
	Growth mechanism of InGaN by plasma assisted molecular beam epitaxy H. Turski, M. Siekacz, M. Sawicka, G. Cywinski, M. Krysko, S. Grzanka, J. Smalc-Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, and C. Skierbiszewski J. Vac. Sci. Technol. B 29, 03C136 (2011) (5 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (446 kB)  ]    Order
	Photoluminescence and secondary ion mass spectrometry study of layer-by-layer grown Zn1−xCdxSe quantum wells I. Hernández-Calderón, M. García-Vázquez, L. M. Hernández-Ramírez, and M. A. Vidal J. Vac. Sci. Technol. B 29, 03C137 (2011) (3 pages) Abstract   Full Text: [ Read Online (HTML)   PDF  (158 kB)  ]    Order

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