Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

May 2010

Volume 28, Issue 3, pp. L21-C4a1

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Letters Regular Articles Brief Reports and Comments Shop Notes Errata PAPERS FROM THE 26th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY Oxide Materials Nitrides and Diluted Nitrides III-V Low Dimensional Structures II-VI Semiconductors Novel Materials MBE Technology Optoelectronic Devices Electronic Devices Material Characterization PAPERS FROM THE 12th INTERNATIONAL CONFERENCE ON NONCONTACT ATOMIC FORCE MICROSCOPY Casimir Forces Measurements of Short-Range Forces NC-AFM in Liquids NC-AFM Imaging and Charges Instrumentation and Method Development

Letters
	Visualizing contact line phenomena on microstructured superhydrophobic surfaces A. H. Cannon and W. P. King pp. L21-L24 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (407 kB)  ]    Order
	Development of ion sources from ionic liquids for microfabrication Carla Perez-Martinez, Stéphane Guilet, Noëlle Gogneau, Pascale Jegou, Jacques Gierak, and Paulo Lozano pp. L25-L27 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (238 kB)  ]    Order
Regular Articles
	Method to obtain nonuniformity information from field emission behavior Fernando F. Dall'Agnol, Alexandre C. de Paulo, Pablo Paredez, Daniel den Engelsen, Thebano E. A. Santos, and Victor P. Mammana pp. 441-449 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1062 kB)  ]    Order
	Effect of energetic ions on plasma damage of porous SiCOH low-k materials E. Kunnen, M. R. Baklanov, A. Franquet, D. Shamiryan, T. V. Rakhimova, A. M. Urbanowicz, H. Struyf, and W. Boullart pp. 450-459 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (889 kB)  ]    Order
	Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-film transistors Ling-Feng Mao pp. 460-465 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (356 kB)  ]    Order
	n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties Ö. Güllü and A. Türüt pp. 466-472 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (238 kB)  ]    Order
	Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition Kung-Liang Lin, Edward-Yi Chang, Yu-Lin Hsiao, Wei-Ching Huang, Tien-Tung Luong, Yuen-Yee Wong, Tingkai Li, Doug Tweet, and Chen-Hao Chiang pp. 473-477 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (436 kB)  ]    Order
	Mn-induced growth of InAs nanowires F. Jabeen, M. Piccin, L. Felisari, V. Grillo, G. Bais, S. Rubini, F. Martelli, F. d'Acapito, M. Rovezzi, and F. Boscherini pp. 478-483 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (553 kB)  ]    Order
	Direct transfer of gold nanoislands from a MoS2 stamp to a Si–H surface Jie Deng, Cedric Troadec, Hui Kim Hui, and Christian Joachim pp. 484-489 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (581 kB)  ]    Order
	Cathodoluminescent properties of nanocrystalline Lu3Ga5O12:Tb3+ phosphor for field emission display application X. G. Xu, Jun Chen, S. Z. Deng, N. S. Xu, and J. Lin pp. 490-494 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (548 kB)  ]    Order
	Cesium and oxygen activated amorphous silicon germanium photocathodes for photoinjectors G. A. Mulhollan and J. C. Bierman pp. 495-499 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (158 kB)  ]    Order
	Effects of focused MeV ion beam irradiation on the roughness of electrochemically micromachined silicon surfaces Y. S. Ow, S. Azimi, M. B. H. Breese, E. J. Teo, and D. Mangaiyarkarasi pp. 500-505 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (548 kB)  ]    Order
	Field emission from N-doped diamond doped with dimethylurea Y. Kudo, Y. Sato, T. Masuzawa, T. Yamada, I. Saito, T. Yoshino, W. J. Chun, S. Yamasaki, and K. Okano pp. 506-510 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (379 kB)  ]    Order
	Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon C. Penley, F. A. Stevie, D. P. Griffis, S. Siebel, L. Kulig, and J. Lee pp. 511-516 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (701 kB)  ]    Order
	Mechanism of ultrathin tunnel barrier failure due to mechanical-stress-induced nanosized hillocks and voids Pawan Tyagi and Bruce J. Hinds pp. 517-521 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (447 kB)  ]    Order
	Aligned dense single-walled carbon nanotube beams and cantilevers for nanoelectromechanical systems applications Miao Lu, Min-Woo Jang, Stephen A. Campbell, and Tianhong Cui pp. 522-526 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (876 kB)  ]    Order
	Atomic radical abatement of organic impurities from electron beam deposited metallic structures Joshua D. Wnuk, Justin M. Gorham, Samantha G. Rosenberg, Theodore E. Madey, Cornelis W. Hagen, and D. Howard Fairbrother pp. 527-537 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (593 kB)  ]    Order
	Parallel fabrication of monolithic nanoscopic tunnel junctions for molecular devices R. Gupta and B. G. Willis pp. 538-544 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (587 kB)  ]    Order
	X-ray photoelectron spectroscopy investigation of oxidation states in molybdenum thin films for Cu(InGa)Se2 applications Y. C. Kang, R. Khanal, J. Y. Park, R. D. Ramsier, H. Khatri, and S. Marsillac pp. 545-548 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (346 kB)  ]    Order
	Fabrication of complex three-dimensional nanostructures using focused ion beam and nanomanipulation Jangbae Jeon, Herman Carlo Floresca, and M. J. Kim pp. 549-553 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (477 kB)  ]    Order
	Depth profile analysis of helium in silicon with high-resolution elastic recoil detection analysis Mitsuhiro Tomita, Haruko Akutsu, Yasunori Oshima, Nobutaka Sato, Shoichi Mure, Hirofumi Fukuyama, and Chikara Ichihara pp. 554-557 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (266 kB)  ]    Order
	Fabrication of gated CuO nanowire field emitter arrays for application in field emission display R. Z. Zhan, Jun Chen, S. Z. Deng, and N. S. Xu pp. 558-561 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (405 kB)  ]    Order
	Nanoscale field emission in inert gas under atmospheric pressure Li Qian, Yuquan Wang, Liang Liu, and Shoushan Fan pp. 562-566 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (429 kB)  ]    Order
	Effect of copper barrier dielectric deposition process on characterization of copper interconnect Yi-Lung Cheng, Tai-Jung Chiu, Bor-Jou Wei, Huan-Jung Wang, Jiung Wu, and Ying-Lang Wang pp. 567-572 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (341 kB)  ]    Order
	Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition Yi-Lung Cheng, Shiuan-An Chen, Tai-Jung Chiu, Jiung Wu, Bor-Jou Wei, and Hung-Jui Chang pp. 573-576 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (191 kB)  ]    Order
	Effect of iodotrifluoromethane plasma for reducing ultraviolet light irradiation damage in dielectric film etching processes Yoshinari Ichihashi, Yasushi Ishikawa, Ryu Shimizu, and Seiji Samukawa pp. 577-580 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (224 kB)  ]    Order
	Electron-beam exposure mechanisms in hydrogen silsesquioxane investigated by vibrational spectroscopy and in situ electron-beam-induced desorption D. L. Olynick, B. Cord, A. Schipotinin, D. F. Ogletree, and P. J. Schuck pp. 581-587 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (476 kB)  ]    Order
	Damage engineering of boron-based low energy ion implantations on ultrashallow junction fabrications Shu Qin, Y. Jeff Hu, and Allen McTeer pp. 588-594 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1207 kB)  ]    Order
	Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques M. Rommel, G. Spoldi, V. Yanev, S. Beuer, B. Amon, J. Jambreck, S. Petersen, A. J. Bauer, and L. Frey pp. 595-607 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1113 kB)  ]    Order
	Neutron transmutation doping effects in GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, A. V. Korulin, and S. J. Pearton pp. 608-612 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (125 kB)  ]    Order
	ZnCdSe nanowires grown by molecular beam epitaxy B. W. Lan, C. H. Hsiao, S. C. Hung, S. J. Chang, S. J. Young, Y. C. Cheng, S. H. Chih, and B. R. Huang pp. 613-616 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (587 kB)  ]    Order
	Submicron organic nanofiber devices with different anode-cathode materials: A simple approach Henrik Henrichsen, Heinz Sturm, Peter Bøggild, and Ole Hansen pp. 617-622 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (575 kB)  ]    Order
	Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition Mina Jung, Jiho Chang, Hyunjae Lee, Jun-seok Ha, Jin-sub Park, Seungwhan Park, Katsushi Fujii, Takafumi Yao, Gyung-suk Kil, Seogwoo Lee, Myungwhan Cho, Sungmin Whang, and Yong-gon Seo pp. 623-626 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (480 kB)  ]    Order
	Simulation of self-focusing electron emitter Guang Yuan, Jinjing Jiang, Chun Li, Weidong Liu, and Hitenori Mimura pp. 627-630 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (192 kB)  ]    Order
	Single-crystal gold tip for tip-enhanced Raman spectroscopy D. Roy, C. M. Williams, and K. Mingard pp. 631-634 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (223 kB)  ]    Order
	Removing GaAs substrate by nitric acid solution C. C. Li, B. L. Guan, D. X. Chuai, X. Guo, and G. D. Shen pp. 635-637 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (254 kB)  ]    Order
Brief Reports and Comments
	Fabrication of regular arrays of gold nanospheres by thermal transformation of electroless-plated films Wonmi Ahn, Phillip Blake, John Shultz, Morgan E. Ware, and D. Keith Roper pp. 638-642 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (296 kB)  ]    Order
Shop Notes
	Resurrecting dirty atomic force microscopy calibration standards Donald A. Chernoff and Robert Sherman pp. 643-647 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (588 kB)  ]    Order
Errata
	Erratum: “Experimental studies of dose retention and activation in fin field-effect-transistor-based structures” [J. Vac. Sci. Technol. B 28, C1H5 (2010)] Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, and Wilfried Vandervorst p. 648 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (27 kB)  ]    Order
PAPERS FROM THE 26th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY Oxide Materials [ Next Subject | Issue Index | Top / Bottom of Page]
	High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge (100): Electrical and chemical characterizations R. L. Chu, T. D. Lin, L. K. Chu, M. L. Huang, C. C. Chang, M. Hong, C. A. Lin, and J. Kwo pp. C3A1-C3A4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (450 kB)  ]    Order
	Growth and structural characterization of epitaxial (La1−xLux)2O3 layers grown on Si(111) Tatsuro Watahiki, Frank Grosse, Vladimir M. Kaganer, André Proessdorf, and Wolfgang Braun pp. C3A5-C3A8 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (142 kB)  ]    Order
	Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong, and J. Kwo pp. C3A9-C3A11 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (305 kB)  ]    Order
	Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si X. Gu, D. Lubyshev, J. Batzel, J. M. Fastenau, W. K. Liu, R. Pelzel, J. F. Magana, Q. Ma, and V. R. Rao pp. C3A12-C3A16 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (478 kB)  ]    Order
	Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111) Y. J. Lee, W. C. Lee, M. L. Huang, S. Y. Wu, C. W. Nieh, M. Hong, J. Kwo, and C.-H. Hsu pp. C3A17-C3A19 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (260 kB)  ]    Order
	Structural analysis of thin epitaxial Y2O3 films on sapphire S. E. Webster, R. Kumaran, S. Penson, and T. Tiedje pp. C3A20-C3A23 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (321 kB)  ]    Order
Nitrides and Diluted Nitrides [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates S. V. Novikov, N. Zainal, A. V. Akimov, C. R. Staddon, A. J. Kent, and C. T. Foxon pp. C3B1-C3B6 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (237 kB)  ]    Order
	Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy Y.-L. Chang, F. Li, and Z. Mi pp. C3B7-C3B11 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (381 kB)  ]    Order
	Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production S. V. Novikov, C. R. Staddon, C. T. Foxon, K. M. Yu, R. Broesler, M. Hawkridge, Z. Liliental-Weber, W. Walukiewicz, J. Denlinger, and I. Demchenko pp. C3B12-C3B16 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (989 kB)  ]    Order
	Broadening of intersubband transitions in InGaN/AlInN multiquantum wells G. Cywiński, M. Gadysiewicz, R. Kudrawiec, M. Kryśko, A. Feduniewicz-Żmuda, M. Siekacz, M. Sawicka, P. Wolny, J. Smalc-Koziorowska, L. Nevou, M. Tchernycheva, F. H. Julien, J. Misiewicz, and C. Skierbiszewski pp. C3B17-C3B21 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (505 kB)  ]    Order
	Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy K. Umeno, Y. Furukawa, N. Urakami, S. Mitsuyoshi, H. Yonezu, A. Wakahara, F. Ishikawa, and M. Kondow pp. C3B22-C3B26 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (177 kB)  ]    Order
III-V Low Dimensional Structures [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Strongly correlated tot=1 state in an intrinsically density-matched electron bilayer system and its two-terminal resistance S. Schmult, L. Tiemann, W. Dietsche, and K. von Klitzing pp. C3C1-C3C3 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (225 kB)  ]    Order
	Highly stacked InGaAs quantum dot structures grown with two species of As Takeyoshi Sugaya, Takeru Amano, Masahiko Mori, and Shigeru Niki pp. C3C4-C3C8 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (317 kB)  ]    Order
	High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth Xifeng Qian, Shivashankar Vangala, Daniel Wasserman, and William D. Goodhue pp. C3C9-C3C14 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (454 kB)  ]    Order
	Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates G. Garcia-Liñan, E. Cruz-Hernández, D. Vázquez-Cortes, E. López-Luna, V. H. Méndez-García, M. López-López, J. Hernandez-Rosas, and L. Zamora-Peredo pp. C3C15-C3C18 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (244 kB)  ]    Order
	Optical and electrical quality improvements of undoped InAs/GaSb superlattices H. J. Haugan, B. Ullrich, L. Grazulis, S. Elhamri, G. J. Brown, and W. C. Mitchel pp. C3C19-C3C24 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (462 kB)  ]    Order
	Molecular beam epitaxy and characterization of InGaAs/AlAs/AlAsSb coupled double quantum wells with extremely thin coupling barriers T. Mozume and S. Gozu pp. C3C25-C3C28 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (299 kB)  ]    Order
	Hole mobility in pseudomorphic InGaSb quantum well modulation doped with carbon Chichih Liao and K. Y. Cheng pp. C3C29-C3C32 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (275 kB)  ]    Order
	Study of the driving force for the self-assembly of heterojunction quantum dots (zero D molecules) using finite element analysis K. G. Eyink, L. Grazulis, M. Twyman, and K. Mahalingam pp. C3C33-C3C36 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (455 kB)  ]    Order
	Molecular-beam epitaxy growth of site-controlled InAs/GaAs quantum dots defined by soft photocurable nanoimprint lithography Chien-Chia Cheng, K. Meneou, and K. Y. Cheng pp. C3C37-C3C40 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (240 kB)  ]    Order
II-VI Semiconductors [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Controlled growth of (100) or (111) CdTe epitaxial layers on (100) GaAs by molecular beam epitaxy and study of their electron spin relaxation times Qiang Zhang, Yunpu Li, Daniela Pagliero, William Charles, Aidong Shen, Carlos A. Meriles, and Maria C. Tamargo pp. C3D1-C3D5 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (212 kB)  ]    Order
	Donor-acceptor-pair photoluminescence in Ga-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy Z. Yang and J. L. Liu pp. C3D6-C3D9 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (333 kB)  ]    Order
	Ultraviolet light emissions in MgZnO/ZnO double heterojunction diodes by molecular beam epitaxy Jieying Kong, Lin Li, Zheng Yang, and Jianlin Liu pp. C3D10-C3D12 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (314 kB)  ]    Order
	Study of rapid thermal annealing effect on CdZnO thin films grown on Si substrate L. Li, Z. Yang, Z. Zuo, J. Y. Kong, and J. L. Liu pp. C3D13-C3D16 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (534 kB)  ]    Order
	Optical study of strongly coupled CdSe quantum dots S. K. Zhang, Thander Myint, W. B. Wang, B. B. Das, Noemi Perez-Paz, H. Lu, M. C. Tamargo, A. Shen, and R. R. Alfano pp. C3D17-C3D19 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (170 kB)  ]    Order
Novel Materials [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Epitaxial growth and structure of Ge–Sb–Te phase change materials on GaSb Roman Shayduk, Ferhat Katmis, Wolfgang Braun, and Henning Riechert pp. C3E1-C3E5 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (425 kB)  ]    Order
	Molecular beam epitaxy growth and characterization of self-assembled MnAs wires on highly oriented pyrolytic graphite S. Hegde, E. Fraser, J. Kwon, and H. Luo pp. C3E6-C3E9 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (513 kB)  ]    Order
	Structural properties of C60-multivalent metal composite layers grown by molecular beam epitaxy Jiro Nishinaga and Yoshiji Horikoshi pp. C3E10-C3E13 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (313 kB)  ]    Order
MBE Technology [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Modulated beam mass spectrometer studies of a Mark V Veeco cracker R. P. Campion, C. T. Foxon, and R. C. Bresnahan pp. C3F1-C3F4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (389 kB)  ]    Order
	Short wavelength band edge thermometry during molecular beam epitaxial growth of GaN on SiC substrates and detected adatom self-heating effects W. E. Hoke, D. Barlett, T. D. Kennedy, B. Wissman, and J. J. Mosca pp. C3F5-C3F9 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (328 kB)  ]    Order
	Wide-dynamic-range, fast-response CBr4 doping system for molecular beam epitaxy Yu-Chia Chang, Yan Zheng, John H. English, Andrew W. Jackson, and Larry A. Coldren pp. C3F10-C3F15 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (319 kB)  ]    Order
Optoelectronic Devices [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors Yagya D. Sharma, M. N. Kutty, R. V. Shenoi, Ajit V. Barve, S. Myers, J. Shao, E. Plis, S. Lee, S. Noh, and S. Krishna pp. C3G1-C3G7 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (637 kB)  ]    Order
	Molecular beam epitaxial growth effects on type-II antimonide lasers and photodiodes C. L. Canedy, J. Abell, W. W. Bewley, E. H. Aifer, C. S. Kim, J. A. Nolde, M. Kim, J. G. Tischler, J. R. Lindle, E. M. Jackson, I. Vurgaftman, and J. R. Meyer pp. C3G8-C3G12 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (305 kB)  ]    Order
	Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection E. Plis, A. Khoshakhlagh, S. Myers, H. S. Kim, N. Gautam, Y. D. Sharma, S. Krishna, S. J. Lee, and S. K. Noh pp. C3G13-C3G18 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (356 kB)  ]    Order
	Intersubband optoelectronics in the InGaAs/GaAsSb material system H. Detz, A. M. Andrews, M. Nobile, P. Klang, E. Mujagić, G. Hesser, W. Schrenk, F. Schäffler, and G. Strasser pp. C3G19-C3G23 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (424 kB)  ]    Order
	Growth of Znx,Cd(1−x)Se/ZnxCdyMg(1−x−y)Se–InP quantum cascade structures for emission in the 3–5  µm range W. O. Charles, Y. Yao, K. J. Franz, Q. Zhang, A. Shen, C. Gmachl, and M. C. Tamargo pp. C3G24-C3G27 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (214 kB)  ]    Order
	Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, Shih-Yen Lin, and Meng-Chyi Wu pp. C3G28-C3G31 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (165 kB)  ]    Order
	Concept of feedback-free high-frequency loss modulation in detuned duo-cavity vertical cavity surface-emitting laser M. Yakimov, J. van Eisden, V. Tokranov, M. Varanasi, S. R. Oktyabrsky, E. M. Mohammed, and I. A. Young pp. C3G32-C3G37 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (321 kB)  ]    Order
Electronic Devices [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates W. E. Hoke, T. D. Kennedy, J. R. LaRoche, A. Torabi, J. P. Bettencourt, P. Saledas, C. D. Lee, P. S. Lyman, T. E. Kazior, M. T. Bulsara, E. A. Fitzgerald, D. Lubyshev, and W. K. Liu pp. C3H1-C3H4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (302 kB)  ]    Order
	Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide P. Nagaiah, V. Tokranov, M. Yakimov, S. Koveshnikov, S. Oktyabrsky, D. Veksler, W. Tsai, and G. Bersuker pp. C3H5-C3H9 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (376 kB)  ]    Order
	Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As Y. D. Wu, T. D. Lin, T. H. Chiang, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. Hong, C. A. Lin, and J. Kwo pp. C3H10-C3H13 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (385 kB)  ]    Order
	dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics T. D. Lin, P. Chang, H. C. Chiu, M. Hong, J. Kwo, Y. S. Lin, and Shawn S. H. Hsu pp. C3H14-C3H17 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (343 kB)  ]    Order
	Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers G. R. Savich, J. R. Pedrazzani, S. Maimon, and G. W. Wicks pp. C3H18-C3H21 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (396 kB)  ]    Order
Material Characterization [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Temperature dependent lattice constant of Al0.90Ga0.10AsySb1−y Magnus Breivik, Tron Arne Nilsen, Geir Myrvågnes, Espen Selvig, and Bjørn-Ove Fimland pp. C3I1-C3I5 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (150 kB)  ]    Order
	Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well K.-Y. Ban, S. N. Dahal, C. B. Honsberg, L. Nataraj, S. P. Bremner, and S. G. Cloutier pp. C3I6-C3I9 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (341 kB)  ]    Order
	Photoionization study of deep centers in GaN/AlGaN multiple quantum wells S. K. Zhang, W. B. Wang, R. R. Alfano, A. Teke, L. He, S. Dogan, D. J. Johnstone, and H. Morkoç pp. C3I10-C3I12 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (178 kB)  ]    Order
	Optical characterization of AlxGa1−xAs/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes D. Vázquez-Cortés, C. Soubervielle-Montalvo, V. H. Méndez-García, L. Zamora-Peredo, and S. Jiménez-Sandoval pp. C3I13-C3I16 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (115 kB)  ]    Order
	Thermal expansion of GaSb measured by temperature dependent x-ray diffraction Tron Arne Nilsen, Magnus Breivik, Geir Myrvågnes, and Bjørn-Ove Fimland pp. C3I17-C3I20 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (112 kB)  ]    Order
	Preface Aidong Shen p. C3a1 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (23 kB)  ]    Order
PAPERS FROM THE 12th INTERNATIONAL CONFERENCE ON NONCONTACT ATOMIC FORCE MICROSCOPY Casimir Forces [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Potential contributions of noncontact atomic force microscopy for the future Casimir force measurements W. J. Kim and U. D. Schwarz pp. C4A1-C4A7 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (131 kB)  ]    Order
	Multiple scattering Casimir force calculations: Layered and corrugated materials, wedges, and Casimir–Polder forces Kimball A. Milton, Prachi Parashar, Jef Wagner, and I. Cavero-Peláez pp. C4A8-C4A16 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (395 kB)  ]    Order
	Optically anisotropic infinite cylinder above an optically anisotropic half space: Dispersion interaction of a single-walled carbon nanotube with a substrate A. Šiber, R. F. Rajter, R. H. French, W. Y. Ching, V. A. Parsegian, and R. Podgornik pp. C4A17-C4A24 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (350 kB)  ]    Order
	Contact potentials in Casimir force setups: An experimental analysis S. de Man, K. Heeck, R. J. Wijngaarden, and D. Iannuzzi pp. C4A25-C4A29 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (184 kB)  ]    Order
	Measurement of the Casimir effect under ultrahigh vacuum: Calibration method Gauthier Torricelli, Stuart Thornton, Chris Binns, Irina Pirozhenko, and Astrid Lambrecht pp. C4A30-C4A35 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (427 kB)  ]    Order
Measurements of Short-Range Forces [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Three-dimensional force spectroscopy of KBr(001) by tuning fork-based cryogenic noncontact atomic force microscopy Bartosz Such, Thilo Glatzel, Shigeki Kawai, Sascha Koch, and Ernst Meyer pp. C4B1-C4B5 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (510 kB)  ]    Order
	Force field experiments of an epitaxial superstructure of 3,4,9,10-perylenetetra-carboxylic-dianhydride on Ag(111) Daniel-Alexander Braun, Gernot Langewisch, Harald Fuchs, and André Schirmeisen pp. C4B6-C4B11 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (734 kB)  ]    Order
	Influence of thermal noise on measured bond lengths in force measurements using dynamic atomic force microscopy Peter M. Hoffmann pp. C4B12-C4B17 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (427 kB)  ]    Order
	Tip-sample interactions on graphite studied in the thermal oscillation regime Giovanna Malegori and Gabriele Ferrini pp. C4B18-C4B23 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (266 kB)  ]    Order
NC-AFM in Liquids [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Theoretical simulation of noncontact atomic force microscopy in liquids M. Tsukada, N. Watanabe, M. Harada, and K. Tagami pp. C4C1-C4C4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (300 kB)  ]    Order
	Frequency modulation atomic force microscope observation of TiO2(110) surfaces in water Akira Sasahara and Masahiko Tomitori pp. C4C5-C4C10 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (508 kB)  ]    Order
	Molecular resolution investigation of tetragonal lysozyme (110) face in liquid by frequency-modulation atomic force microscopy Ken Nagashima, Masayuki Abe, Seizo Morita, Noriaki Oyabu, Kei Kobayashi, Hirofumi Yamada, Masahiro Ohta, Ryohei Kokawa, Ryota Murai, Hiroyoshi Matsumura, Hiroaki Adachi, Kazufumi Takano, Satoshi Murakami, Tsuyoshi Inoue, and Yusuke Mori pp. C4C11-C4C14 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (453 kB)  ]    Order
	Noise in combined optical microscopy and dynamic force spectroscopy: Toward in vivo hydration measurements J. M. LeDue, M. Lopez-Ayon, Y. Miyahara, S. A. Burke, and P. Grütter pp. C4C15-C4C20 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (524 kB)  ]    Order
NC-AFM Imaging and Charges [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Simultaneous atomic force and scanning tunneling microscopy study of the Ge(111)-c(2×8) surface Daisuke Sawada, Yoshiaki Sugimoto, Ken-ichi Morita, Masayuki Abe, and Seizo Morita pp. C4D1-C4D4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (293 kB)  ]    Order
	Noncontact scanning nonlinear dielectric microscopy imaging of TiO2(110) surfaces Nobuhiro Kin and Yasuo Cho pp. C4D5-C4D10 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (779 kB)  ]    Order
	Local dielectric spectroscopy of nanocomposite materials interfaces Massimiliano Labardi, Daniele Prevosto, Kim Hung Nguyen, Simone Capaccioli, Mauro Lucchesi, and Pierangelo Rolla pp. C4D11-C4D17 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (528 kB)  ]    Order
	Investigation of interface between fullerene molecule and Si(111)-7×7 surface by noncontact scanning nonlinear dielectric microscopy Shin-ichiro Kobayashi and Yasuo Cho pp. C4D18-C4D23 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1354 kB)  ]    Order
	Visualization of anisotropic conductance in polydiacetylene crystal by dual-probe frequency-modulation atomic force microscopy/Kelvin-probe force microscopy Eika Tsunemi, Kei Kobayashi, Kazumi Matsushige, and Hirofumi Yamada pp. C4D24-C4D28 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (292 kB)  ]    Order
	Local surface photovoltage spectroscopy of Cu-phthalocyanine clusters on different substrates S. Sadewasser and M. Ch. Lux-Steiner pp. C4D29-C4D33 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (450 kB)  ]    Order
	Contacting self-ordered molecular wires by nanostencil lithography L. Gross, R. R. Schlittler, G. Meyer, L.-A. Fendt, F. Diederich, Th. Glatzel, S. Kawai, S. Koch, and E. Meyer pp. C4D34-C4D39 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (497 kB)  ]    Order
	Potential dependent change in local structure of ferrocenyl-terminated molecular islands by electrochemical frequency modulation atomic force microscopy Ken-ichi Umeda and Ken-ichi Fukui pp. C4D40-C4D45 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (479 kB)  ]    Order
Instrumentation and Method Development [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Numerical analysis of dynamic force spectroscopy using a dual-oscillator sensor Santiago D. Solares and Hendrik Hölscher pp. C4E1-C4E11 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (953 kB)  ]    Order
	Application of the KolibriSensor® to combined atomic-resolution scanning tunneling microscopy and noncontact atomic-force microscopy imaging Stefan Torbrügge, Oliver Schaff, and Jörg Rychen pp. C4E12-C4E20 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1237 kB)  ]    Order
	Very compact design for a low-temperature tuning fork atomic force microscope N. Wintjes, M. Lange, D. van Vörden, H. Karacuban, D. Utzat, and R. Möller pp. C4E21-C4E23 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (288 kB)  ]    Order
	Internal damping for noncontact atomic force microscopy cantilevers Fredy Zypman pp. C4E24-C4E27 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (234 kB)  ]    Order
	Preparation of light-atom tips for scanning probe microscopy by explosive delamination T. Hofmann, J. Welker, and F. J. Giessibl pp. C4E28-C4E30 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (213 kB)  ]    Order
	Vertical and lateral drift corrections of scanning probe microscopy images P. Rahe, R. Bechstein, and A. Kühnle pp. C4E31-C4E38 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (669 kB)  ]    Order
	Open source scanning probe microscopy control software package GXSM Percy Zahl, Thorsten Wagner, Rolf Möller, and Andreas Klust pp. C4E39-C4E47 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (2505 kB)  ]    Order
	Preface Udo D. Schwarz and Hendrik Hölscher p. C4a1 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (23 kB)  ]    Order

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