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| 1. | Editorial Board Page IFC |
| Regular Papers |
| 2. | Al2O3 tunnel barrier as a good candidate for spin injection into silicon Pages 741-744 R. Benabderrahmane, M. Kanoun, N. Bruyant, C. Baraduc, A. Bsiesy, H. Achard |
| 3. | Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I – Static analysis Pages 745-753 Salvatore Russo, Luigi La Spina, Vincenzo d’Alessandro, Niccolò Rinaldi, Lis K. Nanver |
| 4. | Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II – Dynamic analysis Pages 754-762 Salvatore Russo, Luigi La Spina, Vincenzo d’Alessandro, Niccolò Rinaldi, Lis K. Nanver |
| 5. | Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric Pages 763-768 Sarbani Basu, Pramod K. Singh, Po-Wen Sze, Yeong-Her Wang |
| 6. | Thermal analysis of short wavelength InGaAs/InAlAs quantum cascade lasers Pages 769-776 H.K. Lee, J.S. Yu |
| 7. | Direct measurement of electron beam induced currents in p-type silicon Pages 777-780 Myung-Geun Han, Yimei Zhu, Katsuhiro Sasaki, Takeharu Kato, Craig A.J. Fisher, Tsukasa Hirayama |
| 8. | Light-emitting diode quality investigation via low-frequency noise characteristics Pages 781-786 Vilius Palenskis, Jonas Matukas, Sandra Pralgauskaitė |
| 9. | Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes Pages 787-790 Gowrish K. Rao, Kasturi V. Bangera, G.K. Shivakumar |
| 10. | A generic numerical model for detection of terahertz radiation in MOS field-effect transistors Pages 791-795 Yinglei Wang, Zhifeng Yan, Jingxuan Zhu, Lining Zhang, Xinnan Lin, Jin He, Juncheng Cao, Mansun Chan |
| 11. | Statistical modeling of inter-device correlations with BPV Pages 796-800 Ivica Stevanović, Xin Li, Colin C. McAndrew, Keith R. Green, Gennady Gildenblat |
| 12. | Inhomogeneous injection in polar and nonpolar III-nitride light-emitters Pages 801-805 Mikhail V. Kisin, Hussein S. El-Ghoroury |
| Short Communication |
| 13. | Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Pages 806-808 Lining Zhang, Chenyue Ma, Jin He, Xinnan Lin, Mansun Chan |
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