 |
| New Volume/Issue is now available on ScienceDirect |
|
| 1. | Editorial Board Page IFC |
| Letters |
| 2. | Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O2 plasma treatment Pages 1-6 Soo Young Kim, Kihyon Hong, Jong-Lam Lee, Kyu Han Choi, Kyu Ho Song and Kyung Chul Ahn |
| 3. | Low frequency optical noise from organic light emitting diode Pages 7-10 Lin Ke, Xin Yue Zhao, Ramadas Senthil Kumar and Soo Jin Chua |
| Regular Papers |
| 4. | Studying the effect of material parameters on detectivity in a p–n In0.53Ga0.47As photovoltaic detector Pages 11-16 Longhai Li, Jingzhi Yin, Bao Shi, Minshuai Wang, Guotong Du, Yiding Wang and Yixin Jin |
| 5. | On the electrostatic behavior of floating nanoconductors Pages 17-24 D. Deleruyelle and G. Micolau |
| 6. | Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications Pages 25-30 Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta and R.S. Gupta |
| 7. | Effects of exciplex on the electroluminescent and photovoltaic properties of organic diodes based on terbium complex Pages 31-36 Hong He, Wenlian Li, Zisheng Su, Tianle Li, Wenming Su, Bei Chu, Defeng Bi, Liangliang Han, Dan Wang, Lili Chen, Bin Li, Zhiqiang Zhang and ZhiZhi Hu |
| 8. | Phonon transport and thermal conductivity in a dielectric quantum waveguide Pages 37-43 Jian-Duo Lu, Yang-Lai Hou, Liang Shao and Lin Yi |
| 9. | Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements Pages 44-48 S. Ferraton, L. Militaru, A. Souifi, S. Monfray and T. Skotnicki |
| 10. | An InP/InGaAs/InP DHBT with high power density at Ka-band Pages 49-52 Che-ming Wang, Shou-Chien Huang, Wei-Kuo Huang and Yue-ming Hsin |
| 11. | MIS polymeric structures and OTFTs using PMMA on P3HT layers Pages 53-59 M. Estrada, I. Mejia, A. Cerdeira and B. Iñiguez |
| 12. | Fabrication of highly air-stable ambipolar thin-film transistors with organic heterostructure of F16CuPc and DH-α6T Pages 60-62 Rongbin Ye, Mamoru Baba, Kazunori Suzuki and Kunio Mori |
| 13. | Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction Pages 63-66 Yan Zhang, Xin Cao, Zheng He, Chunquan Zhuang, Yifang Chen and Jiaxiong Fang |
| 14. | A unified charge model for symmetric double-gate and surrounding-gate MOSFETs Pages 67-72 Huaxin Lu, Bo Yu and Yuan Taur |
| 15. | Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity Pages 73-77 H. Belgacem and A. Merazga |
| 16. | Numerical and experimental indication of thermally activated tunneling transport in CIS monograin layer solar cells Pages 78-85 Gregor Černivec, Andri Jagomägi, Franc Smole and Marko Topič |
| 17. | Very low-power CMOS LNA for UWB wireless receivers using current-reused topology Pages 86-90 H.L. Kao and K.C. Chang |
| 18. | A derivation of the van der Pauw formula from electrostatics Pages 91-98 Jonathan D. Weiss, Robert J. Kaplar and Kenneth E. Kambour |
| 19. | Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects Pages 99-106 Birahim Diagne, Fabien Prégaldiny, Christophe Lallement, Jean-Michel Sallese and François Krummenacher |
| 20. | Simulation of a dual gate organic transistor compatible with printing methods Pages 107-114 Arash Takshi, Alexandros Dimopoulos and John D. Madden |
| 21. | A new small-signal modeling and extraction method in AlGaN/GaN HEMTs Pages 115-120 Jing Lu, Yan Wang, Long Ma and Zhiping Yu |
| 22. | High efficiency and color saturated blue electroluminescence by using 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl as the thinner host and hole-transporter Pages 121-125 Mingtao Li, Wenlian Li, Wenming Su, Faxin Zang, Bei Chu, Qi Xin, Defeng Bi, Bin Li and Tianzhi Yu |
| 23. | Electrical characteristics related to silicon film thickness in advanced FD SOI–MOSFETs Pages 126-133 A. Ohata, M. Cassé and O. Faynot |
| 24. | Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization Pages 134-139 Md. Tanvir Hasan, Ashraful G. Bhuiyan and Akio Yamamoto |
| 25. | Ultra-low resistivity Al+ implanted 4H–SiC obtained by microwave annealing and a protective graphite cap Pages 140-145 Siddarth G. Sundaresan, Nadeemullah A. Mahadik, Syed B. Qadri, John A. Schreifels, Yong-Lai Tian, Qingchun Zhang, Elba Gomar-Nadal and Mulpuri V. Rao |
| 26. | Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs Pages 146-149 Jung-Hui Tsai and Chien-Ming Li |
| 27. | High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates Pages 150-155 Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama, Shinya Otomo and Seikoh Yoshida |
| 28. | Tapered grating effects on static properties of a bistable QWS-DFB semiconductor laser amplifier Pages 156-163 Mahmoud Aleshams, M.K. Moravvej-Farshi and M.H. Sheikhi |
| 29. | Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs Pages 164-170 T. Okayama, S.D. Arthur, J.L. Garrett and M.V. Rao |
| Send my e-mail in plain text format |
| Modify or Remove My Alerts |
| Access the ScienceDirect Info site if you have questions about this message or other features of this service. |
| This email has been sent to you by ScienceDirect, a division of Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The Netherlands, Tel.+31 20 485 3911. ScienceDirect respects your privacy and does not disclose, rent or sell your personal information to any non-affiliated third parties without your consent, except as may be stated in the ScienceDirect online privacy policy. By using email or alert services, you agree to comply with the ScienceDirect Terms and Conditions. To unsubscribe to alert services, please go to the Alerts page. Copyright © 2007 ScienceDirect. All rights reserved. Any unauthorized use, reproduction, or transfer of this message or its contents, in any medium, is strictly prohibited. ScienceDirect® is a registered trademark of Elsevier B.V. Delivery Job ID: 1927:128519915:1928:110351058 |
