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| 1. | Editorial Board Page IFC |
| 2. | Solid-state electronics special issue foreword Page 1425 Adrian M. Ionescu and Yusuf Leblebici |
| 3. | Research directions in beyond CMOS computing Pages 1426-1431 George I. Bourianoff, Paolo A. Gargini and Dmitri E. Nikonov |
| 4. | Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing Pages 1432-1436 E. Augendre, B.J. Pawlak, S. Kubicek, T. Hoffmann, T. Chiarella, C. Kerner, S. Severi, A. Falepin, J. Ramos, A. De Keersgieter, P. Eyben, D. Vanhaeren, W. Vandervorst, M. Jurczak, P. Absil and S. Biesemans |
| 5. | A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond Pages 1437-1443 Nobuaki Yasutake, Atsushi Azuma, Tatsuya Ishida, Kazuya Ohuchi, Nobutoshi Aoki, Naoki Kusunoki, Shinji Mori, Ichiro Mizushima, Tetsu Morooka, Shigeru Kawanaka and Yoshiaki Toyoshima |
| 6. | Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions Pages 1444-1449 Kah-Wee Ang, Hock-Chun Chin, King-Jien Chui, Ming-Fu Li, Ganesh S. Samudra and Yee-Chia Yeo |
| 7. | High threshold voltage matching performance on gate-all-around MOSFET Pages 1450-1457 Augustin Cathignol, Antoine Cros, Samuel Harrison, Robin Cerrutti, Philippe Coronel, Arnaud Pouydebasque, Krysten Rochereau, Thomas Skotnicki and Gérard Ghibaudo |
| 8. | Experimental evidence and extraction of the electron mass variation in [1 1 0] uniaxially strained MOSFETs Pages 1458-1465 F. Rochette, M. Cassé, M. Mouis, G. Reimbold, D. Blachier, C. Leroux, B. Guillaumot and F. Boulanger |
| 9. | Reduction of gate-to-channel tunneling current in FinFET structures Pages 1466-1472 T. Rudenko, V. Kilchytska, N. Collaert, M. Jurczak, A. Nazarov and D. Flandre |
| 10. | Quantifying self-heating effects with scaling in globally strained Si MOSFETs Pages 1473-1478 Rimoon Agaiby, Yang Yang, Sarah H. Olsen, Anthony G. O’Neill, Geert Eneman, Peter Verheyen, Roger Loo and Cor Claeys |
| 11. | CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing Pages 1479-1484 C. Ren, D.S.H. Chan, W.Y. Loh, G.Q. Lo, N. Balasubramanian and D.-L. Kwong |
| 12. | Modeling of MOSFET parasitic capacitances, and their impact on circuit performance Pages 1485-1493 Judith Mueller, Rainer Thoma, Ertugrul Demircan, Christophe Bernicot and Andre Juge |
| 13. | Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique Pages 1494-1499 W. Chaisantikulwat, M. Mouis, G. Ghibaudo, S. Cristoloveanu, J. Widiez, M. Vinet and S. Deleonibus |
| 14. | Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric Pages 1500-1507 Kathy Boucart and Adrian Mihai Ionescu |
| 15. | Germanium FETs and capacitors with rare earth CeO2/HfO2 gates Pages 1508-1514 A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, P. Tsipas, D.P. Brunco, G. Nicholas, J. Van Steenbergen, F. Bellenger, M. Houssa, M. Caymax and M. Meuris |
| 16. | A systematic investigation of work function in advanced metal gate–HfO2–SiO2 structures with bevel oxide Pages 1515-1522 Atsushi Kuriyama, Jérôme Mitard, Olivier Faynot, Laurent Brévard, Laurence Clerc, Amélie Tozzo, Vincent Vidal, Simon Deleonibus, Hiroshi Iwai and Sorin Cristoloveanu |
| 17. | A novel channel-program–erase technique with substrate transient hot carrier injection for SONOS NAND flash application Pages 1523-1528 Tzu-Hsuan Hsu, Ya Chin King, Jau-Yi Wu, Yen Hao Shih, Hang Ting Lue, Erh-Kun Lai, Kuang-Yeu Hsieh, Rich Liu and Chih-Yuan Lu |
| 18. | New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs Pages 1529-1533 Ho Jin Cho, Young Dae Kim, Dong Su Park, Euna Lee, Cheol Hwan Park, Jun Soo Jang, Keum Bum Lee, Hai Won Kim, Young Jong Ki, Il Keun Han and Yong Wook Song |
| 19. | DRAM retention tail improvement by trap passivation Pages 1534-1539 A. Weber, A. Birner and W. Krautschneider |
| 20. | Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories Pages 1540-1546 Gabriel Molas, Marc Bocquet, Julien Buckley, Helen Grampeix, Marc Gély, Jean-Philippe Colonna, Christophe Licitra, Névine Rochat, Thomas Veyront, Xavier Garros, François Martin, Pierre Brianceau, Vincent Vidal, Cosimo Bongiorno, Salvatore Lombardo, Barbara De Salvo and Simon Deleonibus |
| 21. | VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications Pages 1547-1551 Falong Zhou, Yimao Cai, Ru Huang, Yan Li, Xiaonan Shan, Jia Liu, Ao Guo, Xing Zhang and Yangyuan Wang |
| 22. | Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications Pages 1552-1557 Ken Uchida, Tetsufumi Tanamoto and Shinobu Fujita |
| 23. | Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections Pages 1558-1564 I. Riolino, M. Braccioli, L. Lucci, P. Palestri, D. Esseni, C. Fiegna and L. Selmi |
| 24. | Geometry optimization for carbon nanotube transistors Pages 1565-1571 M. Pourfath, H. Kosina and S. Selberherr |
| 25. | An industrial view on compact modeling Pages 1572-1580 Reinout Woltjer, Luuk Tiemeijer and Dick Klaassen |
| 26. | An EKV-based high voltage MOSFET model with improved mobility and drift model Pages 1581-1588 Yogesh Singh Chauhan, Renaud Gillon, Benoit Bakeroot, Francois Krummenacher, Michel Declercq and Adrian Mihai Ionescu |
| 27. | Power Trench MOSFETs with very low specific on-resistance for 25V applications Pages 1589-1595 Pierre Goarin, Rob van Dalen, Gerhard Koops and Christelle Le Cam |
| 28. | One and two port piezoelectric higher order contour-mode MEMS resonators for mechanical signal processing Pages 1596-1608 Gianluca Piazza, Philip J. Stephanou and Albert P. Pisano |
| 29. | Modeling and system-level simulation of a CMOS convective accelerometer Pages 1609-1617 O. Leman, A. Chaehoi, F. Mailly, L. Latorre and P. Nouet |
| 30. | Bandgap engineering in Alq3- and NPB-based organic light-emitting diodes for efficient green, blue and white emission Pages 1618-1623 Y. Divayana, X.W. Sun, B.J. Chen, G.Q. Lo, K.R. Sarma and D.L. Kwong |
| 31. | High pass filter with above IC integrated SrTiO3 high K MIM capacitors Pages 1624-1628 Emmanuel Defaÿ, David Wolozan, Jean-Pierre Blanc, Emmanuelle Serret, Pierre Garrec, Sophie Verrun, Denis Pellissier, Philippe Delpech, Julie Guillan, Bernard André, Laurent Ulmer, Marc Aïd and Pascal Ancey |
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