Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

July 2010

Volume 28, Issue 4, pp. L31-C5I9

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Letters Regular Articles PAPERS FROM THE 37th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES Epitaxial Oxides Epitaxial oxides on silicon Graphene and nanotubes Biological interfaces Quantum dots Organic films, interlayers, and devices Scanning probe techniques for atom manipulation and nanoscale characterization Interface characterization Device-related phenomena

Letters
	Scatterometric porosimetry: A new characterization technique for porous material patterned structures R. Bouyssou, M. El Kodadi, C. Licitra, T. Chevolleau, M. Besacier, N. Posseme, O. Joubert, and P. Schiavone pp. L31-L34 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (186 kB)  ]    Order
	Electric field induced motion of metallic droplets: Application to submicron contactor H. Dallaporta, M. Prestigiacomo, F. Bedu, D. Tonneau, D. Chatain, and P. Sudraud pp. L35-L38 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (236 kB)  ]    Order
Regular Articles
	Continuous cell air-extracting technique used for fast cell filling of flexible liquid-crystal displays Wen-Tuan Wu, Chia-Jen Chang, Hsyi-En Cheng, Ching-Ming Hsu, and Kun-San Tsen pp. 673-677 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (360 kB)  ]    Order
	Semiconductor-superconductor transition and magnetoresistance terraces in an ultrathin superconducting Pb nanobridge Jian Wang, Jin-Feng Jia, Xu-Cun Ma, Quan-Tong Shen, Tie-Zhu Han, Ai-Zi Jin, Li Lu, Chang-Zhi Gu, Ming-Liang Tian, X. C. Xie, and Qi-Kun Xue pp. 678-681 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (369 kB)  ]    Order
	Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers Aidong Zhang, Aoxiang Lin, Jau-Sheng Wang, and Jean Toulouse pp. 682-686 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (206 kB)  ]    Order
	Novel split-tip proximal probe for fabrication of nanometer-textured, in-plane oriented polymer films Beverly Clark, III, M. P. Taylor, and H. D. Hallen pp. 687-692 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (516 kB)  ]    Order
	Simulations of radical and ion fluxes on a wafer in a Cl2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments Emilie Despiau-Pujo, Pascal Chabert, Shailendra Bansropun, Didier Thénot, Patrick Plouhinec, and Simone Cassette pp. 693-701 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (402 kB)  ]    Order
	Extension of active region in crossbar-type polymer solar photovoltaics induced by highly conductive PEDOT:PSS buffer layer Tsung-Syun Huang, Chun-Yuan Huang, Yan-Kuin Su, Ying-Chih Chen, Jiun-Shiang Fang, and Ten-Chin Wen pp. 702-705 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (604 kB)  ]    Order
	Atomic diffusion bonding of wafers with thin nanocrystalline metal films T. Shimatsu and M. Uomoto pp. 706-714 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1116 kB)  ]    Order
	Conformal electroless filling of Cu into patterned amorphous carbon layer modified by oxygen plasma and aminosilane treatments H. W. Kim and N.-E. Lee pp. 715-719 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (217 kB)  ]    Order
	Effect of rapid thermal annealing on MgxZn1−xO films prepared by radio-frequency magnetron sputtering Kuang-Po Hsueh, Chun-Ju Tun, Hsien-Chin Chiu, Yu-Ping Huang, and Gou-Chung Chi pp. 720-723 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (199 kB)  ]    Order
	Carbon nanotube field emitter irradiated by proton beam Seung-Min Lee, Wal-Jun Kim, Yong-Hyup Kim, Taekeun Yang, and Juneyong Han pp. 724-728 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (606 kB)  ]    Order
	Fabrication of surface plasmon waveguides and devices in Cytop with integrated microfluidic channels Charles Chiu, Ewa Lisicka-Skrzek, R. Niall Tait, and Pierre Berini pp. 729-735 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (544 kB)  ]    Order
	Field emission behavior study of multiwalled carbon nanotube yarn under the influence of adsorbents Peng Liu, Kaili Jiang, Yang Wei, Kai Liu, Liang Liu, and Shoushan Fan pp. 736-739 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (341 kB)  ]    Order
	Newly developed electron beam stepper for nanoimprint mold fabrication Makoto Okada, Takashi Kishiro, Kaori Yanagihara, Masashi Ataka, Norimichi Anazawa, and Shinji Matsui pp. 740-743 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (409 kB)  ]    Order
	Improving the metallic content of focused electron beam-induced deposits by a scanning electron microscope integrated hydrogen-argon microplasma generator Hiroyuki Miyazoe, Ivo Utke, Hirokazu Kikuchi, Shinya Kiriu, Vinzenz Friedli, Johann Michler, and Kazuo Terashima pp. 744-750 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (626 kB)  ]    Order
	Molecular structure effects on dry etching behavior of Si-containing resists in oxygen plasma R. L. Bruce, T. Lin, R. J. Phaneuf, G. S. Oehrlein, W. Bell, B. Long, and C. G. Willson pp. 751-757 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (816 kB)  ]    Order
	Numerical testing of the Fowler–Nordheim equation for the electronic field emission from a flat metal and proposition for an improved equation A. Mayer pp. 758-762 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (162 kB)  ]    Order
	Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate Si-Young Park, Sandro J. Di Giacomo, R. Anisha, Paul R. Berger, Phillip E. Thompson, and Ilesanmi Adesida pp. 763-768 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (418 kB)  ]    Order
	Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge–SiO2 bonding Xiaobo Ma, Weili Liu, Xiaofeng Du, Xuyan Liu, Zhitang Song, Chenglu Lin, and Paul K. Chu pp. 769-774 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (484 kB)  ]    Order
	Novel technique for formation of metal lines by functional liquid containing metal nanoparticles and reduction of their resistivity by hydrogen treatment Nguyen Thi Thanh Kieu, Keisuke Ohdaira, Tatsuya Shimoda, and Hideki Matsumura pp. 775-782 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (568 kB)  ]    Order
	Dual exposure, two-photon, conformal phase mask lithography for three dimensional silicon inverse woodpile photonic crystals Daniel J. Shir, Erik C. Nelson, Debashis Chanda, Andrew Brzezinski, Paul V. Braun, John A. Rogers, and Pierre Wiltzius pp. 783-788 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1332 kB)  ]    Order
	Impact of metal etch residues on etch species density and uniformity Dries Dictus, Denis Shamiryan, Vasile Paraschiv, Werner Boullart, Stefan De Gendt, and Chris Vinckier pp. 789-794 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (352 kB)  ]    Order
	Effects of argon ion bombardment on the structure and magnetic properties of ultrathin Fe films Shivaraman Ramaswamy, C. Gopalakrishnan, K. R. Ganesh, K. Jeganathan, and M. Ponnavaikko pp. 795-798 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (443 kB)  ]    Order
	Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor Moongyu Jang, Myungsim Jun, and Taehyoung Zyung pp. 799-801 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (221 kB)  ]    Order
	In situ direct visualization of irradiated electron-beam patterns on unprocessed resists using atomic force microscopy H. Koop, M. Zech, K. Karrai, D. Schnurbusch, M. Müller, T. Gründl, M.-C. Amann, and A. W. Holleitner pp. 802-805 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (358 kB)  ]    Order
	Novel planarizing scheme for patterned media Wei Choong Allen Poh, Hang Khume Tan, Lay Ting Ong, Hui Kim Hui, Seng Kai Wong, Kyaw Oo Aung, Eileen Tan, Rachid Sbiaa, Yew Seng Kay, and S. N. Piramanayagam pp. 806-808 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (279 kB)  ]    Order
	Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms N. Posseme, T. Chevolleau, R. Bouyssou, T. David, V. Arnal, J. P. Barnes, C. Verove, and O. Joubert pp. 809-816 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1155 kB)  ]    Order
	Polythiophene-based charge dissipation layer for electron beam lithography of zinc oxide and gallium nitride R. Dylewicz, S. Lis, R. M. De La Rue, and F. Rahman pp. 817-822 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (629 kB)  ]    Order
	All-inorganic thermal nanoimprint process Dirk N. Weiss, Stephen T. Meyers, and Douglas A. Keszler pp. 823-828 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (251 kB)  ]    Order
	Mechanism of increase in charge-pumping current of metal-nitride-oxide-silicon-field effect transistors during thick dielectric film etching using fluorocarbon gas plasma Yoshinari Ichihashi, Yasushi Ishikawa, Ryu Shimizu, and Seiji Samukawa pp. 829-833 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (750 kB)  ]    Order
	High sheet resistance, low temperature coefficient of resistance resistor films for integrated circuits S. W. Wright, C. P. Judge, M. J. Lee, D. F. Bowers, M. Dunbar, and C. D. Wilson pp. 834-840 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (134 kB)  ]    Order
	Lithographic performance evaluation of a contaminated extreme ultraviolet mask after cleaning Simi George, Patrick Naulleau, Uzodinma Okoroanyanwu, Kornelia Dittmar, Christian Holfeld, and Andrea Wüest pp. 841-848 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1203 kB)  ]    Order
	Wafer-scale nanopatterning using electrodeposition Leung Kway Lee and Pei-Cheng Ku pp. 849-853 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (565 kB)  ]    Order
	High-aspect-ratio deep Si etching in SF6/O2 plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns Takahiro Maruyama, Takeshi Narukage, Ryota Onuki, and Nobuo Fujiwara pp. 854-861 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (385 kB)  ]    Order
	High-aspect-ratio deep Si etching in SF6/O2 plasma. II. Mechanism of lateral etching in high-aspect-ratio features Takahiro Maruyama, Takeshi Narukage, Ryota Onuki, and Nobuo Fujiwara pp. 862-868 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (460 kB)  ]    Order
	Synergistic Compositions of Colloidal Nanodiamond as Lubricant-additive M. G. Ivanov, S. V. Pavlyshko, D. M. Ivanov, I. Petrov, and O. Shenderova pp. 869-877 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (388 kB)  ]    Order
	Simulation study of the in-plane-type triode carbon nanotube emitter Hiroshi Furuta, Kazuhisa Ishii, Kouji Okada, Mamoru Furuta, and Takashi Hirao pp. 878-881 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (505 kB)  ]    Order
	Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry R. Dylewicz, R. M. De La Rue, R. Wasielewski, P. Mazur, G. Mezősi, and A. C. Bryce pp. 882-890 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1145 kB)  ]    Order
PAPERS FROM THE 37th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES
	Preface Alex Demkov and Rudy Ludeke p. C5a1 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (23 kB)  ]    Order
Epitaxial Oxides [ Next Subject | Issue Index | Top / Bottom of Page]
	Synthesis and calorimetric studies of oxide multilayer systems: Solid oxide fuel cell cathode and electrolyte materials Nihan Kemik, Sergey V. Ushakov, Nicole Schichtel, Carsten Korte, Yayoi Takamura, and Alexandra Navrotsky pp. C5A1-C5A5 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (227 kB)  ]    Order
	Growth and characterization of PZT/LSMO multiferroic heterostructures C. A. F. Vaz, Y. Segal, J. Hoffman, F. J. Walker, and C. H. Ahn pp. C5A6-C5A10 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (488 kB)  ]    Order
	Survey of fractured SrTiO3 surfaces: From the micrometer to nanometer scale TeYu Chien, Nathan P. Guisinger, and John W. Freeland pp. C5A11-C5A13 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (283 kB)  ]    Order
	Phase separation and microstructure of BaTiO3–CoFe2O4 epitaxial nanocomposite films deposited under low working pressure Kyoung Sun Kim, Seung Ho Han, Ho Gi Kim, Jeong Seog Kim, and Chae Il Cheon pp. C5A14-C5A19 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (773 kB)  ]    Order
	Domain dynamics in epitaxial Pb(Zr0.2Ti0.8)O3 films studied by piezoelectric force microscopy Levente J. Klein, Catherine Dubourdieu, Martin M. Frank, Jason Hoffman, James W. Reiner, and Charles H. Ahn pp. C5A20-C5A23 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (507 kB)  ]    Order
	Polar catastrophe and the spin-polarized electron gas at the LaMnO3/SrMnO3 interface B. R. K. Nanda and S. Satpathy pp. C5A24-C5A27 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (177 kB)  ]    Order
Epitaxial oxides on silicon [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Morphology of epitaxial SrTiO3/Si (001) determined using three-dimensional diffraction profile analysis Y. Segal, J. W. Reiner, Z. Zhang, C. H. Ahn, and F. J. Walker pp. C5B1-C5B4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (369 kB)  ]    Order
	Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor, and W. Daum pp. C5B5-C5B11 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1007 kB)  ]    Order
Graphene and nanotubes [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments Luxmi, N. Srivastava, R. M. Feenstra, and P. J. Fisher pp. C5C1-C5C7 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1067 kB)  ]    Order
	Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges Yuto Fujii, Akiko Natori, and Jun Nakamura pp. C5C8-C5C11 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (232 kB)  ]    Order
Biological interfaces [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Multitechnique characterization of adsorbed peptide and protein orientation: LK310 and Protein G B1 J. E. Baio, T. Weidner, N. T. Samuel, Keith McCrea, Loren Baugh, Patrick S. Stayton, and David G. Castner pp. C5D1-C5D8 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (523 kB)  ]    Order
Quantum dots [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition F. Genz, A. Lenz, H. Eisele, L. Ivanova, R. Timm, U. W. Pohl, M. Dähne, D. Franke, and H. Künzel pp. C5E1-C5E7 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (541 kB)  ]    Order
	Fabrication and coupling investigation of films of PbS quantum dots Wei Lü, Fumihiko Yamada, and Itaru Kamiya pp. C5E8-C5E12 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (318 kB)  ]    Order
	Atomic structure and strain of the InAs wetting layer growing on GaAs(001)-c(4×4) C. Prohl, B. Höpfner, J. Grabowski, M. Dähne, and H. Eisele pp. C5E13-C5E21 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (637 kB)  ]    Order
	Vibrational spectra of quantum dots formed by Langmuir–Blodgett technique A. Milekhin, L. Sveshnikova, T. Duda, N. Surovtsev, S. Adichtchev, L. Ding, and D. R. T. Zahn pp. C5E22-C5E24 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (141 kB)  ]    Order
	Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses O. Moshe, D. H. Rich, B. Damilano, and J. Massies pp. C5E25-C5E34 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (1176 kB)  ]    Order
Organic films, interlayers, and devices [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Dual parameter ballistic electron emission spectroscopy analysis of inhomogeneous interfaces Cedric Troadec and Kuan Eng Johnson Goh pp. C5F1-C5F4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (331 kB)  ]    Order
	Real-time monitoring of the evolving morphology and molecular structure at an organic-inorganic semiconductor interface: SnPc on GaAs(001) D. A. Evans, A. R. Vearey-Roberts, O. R. Roberts, A. C. Brieva, A. Bushell, G. T. Williams, D. P. Langstaff, G. Cabailh, and I. T. McGovern pp. C5F5-C5F11 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (741 kB)  ]    Order
	Probing and modeling of interfacial carrier motion in organic devices by optical second harmonic generation Mitsumasa Iwamoto, Takaaki Manaka, Martin Weis, and Dai Taguchi pp. C5F12-C5F16 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (207 kB)  ]    Order
	In situ investigation of CuPc thin films grown on vicinal Si(111) L. Ding, M. Friedrich, O. D. Gordan, and D. R. T. Zahn pp. C5F17-C5F21 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (489 kB)  ]    Order
	Mobility saturation in tapered edge bottom contact copper phthalocyanine thin film transistors James E. Royer, Jeongwon Park, Corneliu Colesniuc, Joon Sung Lee, Thomas Gredig, Sangyeob Lee, Sungho Jin, Ivan K. Schuller, William C. Trogler, and Andrew C. Kummel pp. C5F22-C5F27 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (713 kB)  ]    Order
	Control of surface morphology and electronic properties of III-V semiconductors using molecular modification Fumihiko Yamada, Shuichi Arakawa, and Itaru Kamiya pp. C5F28-C5F32 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (332 kB)  ]    Order
Scanning probe techniques for atom manipulation and nanoscale characterization [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Atom-by-atom assembly and spectroscopy of In/InAs(111)A adatom chains by low-temperature scanning tunneling microscopy Jianshu Yang, Christophe Nacci, Kiyoshi Kanisawa, and Stefan Fölsch pp. C5G1-C5G4 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (259 kB)  ]    Order
	Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge I. Beinik, B. Galiana, M. Kratzer, C. Teichert, I. Rey-Stolle, C. Algora, and P. Tejedor pp. C5G5-C5G10 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (344 kB)  ]    Order
	Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN(100) surfaces H. Eisele, S. Borisova, L. Ivanova, M. Dähne, and Ph. Ebert pp. C5G11-C5G18 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (518 kB)  ]    Order
Interface characterization [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100) Henning Döscher, Bernardette Kunert, Andreas Beyer, Oliver Supplie, Kerstin Volz, Wolfgang Stolz, and Thomas Hannappel pp. C5H1-C5H6 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (507 kB)  ]    Order
Device-related phenomena [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics J. Triska, J. F. Conley, Jr., R. Presley, and J. F. Wager pp. C5I1-C5I6 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (281 kB)  ]    Order
	Ex situ Ohmic contacts to n-InGaAs Ashish Baraskar, Mark A. Wistey, Vibhor Jain, Evan Lobisser, Uttam Singisetti, Greg Burek, Yong Ju Lee, Brian Thibeault, Arthur Gossard, and Mark Rodwell pp. C5I7-C5I9 Abstract   Full Text: [ HTML   Sectioned HTML   PDF  (216 kB)  ]    Order

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ScienceDirect Topic Alert: Electronic Engineering

Topic Alert: 33 New articles Available on ScienceDirect

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ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 10, 2010

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 54, Issue 10,  Pages 1051-1238 (October 2010) Selected Papers from ISDRS 2009 Edited by Agis A. Iliadis and Akin Akturk

1.

Editorial Board Page IFC

Editorial

2.

Foreword Page 1051 Agis A. Iliadis, Akin Akturk

Regular Papers

3.

Application of a novel test system to characterize single-event effects at cryogenic temperatures Pages 1052-1059 Vishwanath Ramachandran, Matthew J. Gadlage, Jonathan R. Ahlbin, Balaji Narasimham, Michael L. Alles, Robert A. Reed, Bharat L. Bhuva, Lloyd W. Massengill, Jeffrey D. Black, Christopher N. Foster

4.

Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL) Pages 1060-1065 Seongjae Cho, Jung Hoon Lee, Shinichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Byung-Gook Park

5.

Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers Pages 1066-1070 Sicheng Liao, Ke Sun, Mitra Dutta, Michael A. Stroscio

6.

Epitaxial graphene top-gate FETs on silicon substrates Pages 1071-1075 Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

7.

Atomic layer deposited high-k nanolaminate capacitors Pages 1076-1082 S.W. Smith, K.G. McAuliffe, J.F. Conley Jr.

8.

Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node Pages 1083-1087 Ghader Darbandy, Romain Ritzenthaler, Francois Lime, Ivan Garduño, Magali Estrada, Antonio Cerdeira, Benjamin Iñiguez

9.

The spatial origin of current noise in semiconductor devices in the framework of semiclassical transport Pages 1088-1093 C.E. Korman, B.A. Noaman

10.

Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Pages 1094-1097 Chung-Hao Fu, Kuei-Shu Chang-Liao, Li-We Du, Tien-Ko Wang, W.F. Tsai, C.F. Ai

11.

Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs Pages 1098-1104 David J. Meyer, Robert Bass, D. Scott Katzer, David A. Deen, Steven C. Binari, Kevin M. Daniels, Charles R. Eddy Jr.

12.

High-temperature modeling of AlGaN/GaN HEMTs Pages 1105-1112 S. Vitanov, V. Palankovski, S. Maroldt, R. Quay

13.

Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel Pages 1113-1118 Li-Jung Liu, Kuei-Shu Chang-Liao, Wen-Chun Keng, Tien-Ko Wang

14.

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Pages 1119-1124 Hongping Zhao, Guangyu Liu, Ronald A. Arif, Nelson Tansu

15.

Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses Pages 1125-1129 J.L. Tomaino, A.D. Jameson, Yun-Shik Lee, J.P. Prineas, J.T. Steiner, M. Kira, S.W. Koch

16.

Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates Pages 1130-1134 A.V. Sampath, G.A. Garrett, E.D. Readinger, R.W. Enck, H. Shen, M. Wraback, J.R. Grandusky, L.J. Schowalter

17.

A toggle MRAM bit modeled in Verilog-A Pages 1135-1142 Linda M. Engelbrecht, Albrecht Jander, Pallavi Dhagat, Michael Hall

18.

ZnO nanobridge devices fabricated using carbonized photoresist Pages 1143-1149 B.D. Pelatt, C.C. Huang, J.F. Conley Jr.

19.

Crystal quality and conductivity type of (0 0 2) ZnO films on (1 0 0) Si substrates for device applications Pages 1150-1154 Saeed Esmaili Sardari, Agis A. Iliadis, M. Stamataki, D. Tsamakis, N. Konofaos

20.

Effects of fin width on memory windows in FinFET ZRAMs Pages 1155-1159 E.X. Zhang, D.M. Fleetwood, M.L. Alles, R.D. Schrimpf, F.E. Mamouni, W. Xiong, S. Cristoloveanu

21.

High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric Pages 1160-1165 Chung-Hao Fu, Kuei-Shu Chang-Liao, Hsueh-Yueh Lu, Chen-Chien Li, Tien-Ko Wang

22.

Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology Pages 1166-1172 Marko Koričić, Tomislav Suligoj, Hidenori Mochizuki, So-ichi Morita, Katsumi Shinomura, Hisaya Imai

23.

Reliable procedure for electrical characterization of MOS-based devices Pages 1173-1184 Josef Dobeš, Jan Míchal, Václav Paňko, Ladislav Pospíšil

24.

Facile pyrolytic synthesis of silicon nanowires Pages 1185-1191 Joo C. Chan, Hoang Tran, James W. Pattison, Shankar B. Rananavare

25.

A high efficient, low power, and compact charge pump by vertical MOSFETs Pages 1192-1196 Koji Sakui, Tetsuo Endoh

26.

Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics Pages 1197-1203 Chin-Lung Cheng, Jeng-Haur Horng, Kuei-Shu Chang-Liao, Jin-Tsong Jeng, Hung-Yang Tsai

27.

Controlled growth, patterning and placement of carbon nanotube thin films Pages 1204-1210 V.K. Sangwan, V.W. Ballarotto, D.R. Hines, M.S. Fuhrer, E.D. Williams

28.

Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas Pages 1211-1215 Filiz Yesilkoy, Kwangsik Choi, Mario Dagenais, Martin Peckerar

29.

A SiGe/Si multiple quantum well avalanche photodetector Pages 1216-1220 Po-Hsing Sun, Shu-Tong Chang, Yu-Chun Chen, Hongchin Lin

30.

Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions Pages 1221-1226 Hooyoung Song, Jin Soak Kim, Eun Kyu Kim, Sung-Ho Lee, Jae Bum Kim, Ji-su Son, Sung-Min Hwang

31.

Si implant-assisted Ohmic contacts to GaN Pages 1227-1231 Cuong Nguyen, Pankaj Shah, Edward Leong, Michael Derenge, Kenneth Jones

32.

The benefits and current progress of SiC SGTOs for pulsed power applications Pages 1232-1237 Aderinto Ogunniyi, Heather O’Brien, Aivars Lelis, Charles Scozzie, William Shaheen, Anant Agarwal, Jon Zhang, Robert Callanan, Victor Temple

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