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| 1. | Editorial Board Page IFC |
| Editorial |
| 2. | Foreword Page 1051 Agis A. Iliadis, Akin Akturk |
| Regular Papers |
| 3. | Application of a novel test system to characterize single-event effects at cryogenic temperatures Pages 1052-1059 Vishwanath Ramachandran, Matthew J. Gadlage, Jonathan R. Ahlbin, Balaji Narasimham, Michael L. Alles, Robert A. Reed, Bharat L. Bhuva, Lloyd W. Massengill, Jeffrey D. Black, Christopher N. Foster |
| 4. | Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL) Pages 1060-1065 Seongjae Cho, Jung Hoon Lee, Shinichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Byung-Gook Park |
| 5. | Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers Pages 1066-1070 Sicheng Liao, Ke Sun, Mitra Dutta, Michael A. Stroscio |
| 6. | Epitaxial graphene top-gate FETs on silicon substrates Pages 1071-1075 Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji |
| 7. | Atomic layer deposited high-k nanolaminate capacitors Pages 1076-1082 S.W. Smith, K.G. McAuliffe, J.F. Conley Jr. |
| 8. | Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node Pages 1083-1087 Ghader Darbandy, Romain Ritzenthaler, Francois Lime, Ivan Garduño, Magali Estrada, Antonio Cerdeira, Benjamin Iñiguez |
| 9. | The spatial origin of current noise in semiconductor devices in the framework of semiclassical transport Pages 1088-1093 C.E. Korman, B.A. Noaman |
| 10. | Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Pages 1094-1097 Chung-Hao Fu, Kuei-Shu Chang-Liao, Li-We Du, Tien-Ko Wang, W.F. Tsai, C.F. Ai |
| 11. | Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs Pages 1098-1104 David J. Meyer, Robert Bass, D. Scott Katzer, David A. Deen, Steven C. Binari, Kevin M. Daniels, Charles R. Eddy Jr. |
| 12. | High-temperature modeling of AlGaN/GaN HEMTs Pages 1105-1112 S. Vitanov, V. Palankovski, S. Maroldt, R. Quay |
| 13. | Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel Pages 1113-1118 Li-Jung Liu, Kuei-Shu Chang-Liao, Wen-Chun Keng, Tien-Ko Wang |
| 14. | Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Pages 1119-1124 Hongping Zhao, Guangyu Liu, Ronald A. Arif, Nelson Tansu |
| 15. | Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses Pages 1125-1129 J.L. Tomaino, A.D. Jameson, Yun-Shik Lee, J.P. Prineas, J.T. Steiner, M. Kira, S.W. Koch |
| 16. | Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates Pages 1130-1134 A.V. Sampath, G.A. Garrett, E.D. Readinger, R.W. Enck, H. Shen, M. Wraback, J.R. Grandusky, L.J. Schowalter |
| 17. | A toggle MRAM bit modeled in Verilog-A Pages 1135-1142 Linda M. Engelbrecht, Albrecht Jander, Pallavi Dhagat, Michael Hall |
| 18. | ZnO nanobridge devices fabricated using carbonized photoresist Pages 1143-1149 B.D. Pelatt, C.C. Huang, J.F. Conley Jr. |
| 19. | Crystal quality and conductivity type of (0 0 2) ZnO films on (1 0 0) Si substrates for device applications Pages 1150-1154 Saeed Esmaili Sardari, Agis A. Iliadis, M. Stamataki, D. Tsamakis, N. Konofaos |
| 20. | Effects of fin width on memory windows in FinFET ZRAMs Pages 1155-1159 E.X. Zhang, D.M. Fleetwood, M.L. Alles, R.D. Schrimpf, F.E. Mamouni, W. Xiong, S. Cristoloveanu |
| 21. | High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric Pages 1160-1165 Chung-Hao Fu, Kuei-Shu Chang-Liao, Hsueh-Yueh Lu, Chen-Chien Li, Tien-Ko Wang |
| 22. | Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology Pages 1166-1172 Marko Koričić, Tomislav Suligoj, Hidenori Mochizuki, So-ichi Morita, Katsumi Shinomura, Hisaya Imai |
| 23. | Reliable procedure for electrical characterization of MOS-based devices Pages 1173-1184 Josef Dobeš, Jan Míchal, Václav Paňko, Ladislav Pospíšil |
| 24. | Facile pyrolytic synthesis of silicon nanowires Pages 1185-1191 Joo C. Chan, Hoang Tran, James W. Pattison, Shankar B. Rananavare |
| 25. | A high efficient, low power, and compact charge pump by vertical MOSFETs Pages 1192-1196 Koji Sakui, Tetsuo Endoh |
| 26. | Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics Pages 1197-1203 Chin-Lung Cheng, Jeng-Haur Horng, Kuei-Shu Chang-Liao, Jin-Tsong Jeng, Hung-Yang Tsai |
| 27. | Controlled growth, patterning and placement of carbon nanotube thin films Pages 1204-1210 V.K. Sangwan, V.W. Ballarotto, D.R. Hines, M.S. Fuhrer, E.D. Williams |
| 28. | Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas Pages 1211-1215 Filiz Yesilkoy, Kwangsik Choi, Mario Dagenais, Martin Peckerar |
| 29. | A SiGe/Si multiple quantum well avalanche photodetector Pages 1216-1220 Po-Hsing Sun, Shu-Tong Chang, Yu-Chun Chen, Hongchin Lin |
| 30. | Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions Pages 1221-1226 Hooyoung Song, Jin Soak Kim, Eun Kyu Kim, Sung-Ho Lee, Jae Bum Kim, Ji-su Son, Sung-Min Hwang |
| 31. | Si implant-assisted Ohmic contacts to GaN Pages 1227-1231 Cuong Nguyen, Pankaj Shah, Edward Leong, Michael Derenge, Kenneth Jones |
| 32. | The benefits and current progress of SiC SGTOs for pulsed power applications Pages 1232-1237 Aderinto Ogunniyi, Heather O’Brien, Aivars Lelis, Charles Scozzie, William Shaheen, Anant Agarwal, Jon Zhang, Robert Callanan, Victor Temple |
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