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Applied Physics Letters -- 8 March 2010


Cover image from Bomi Gweon, Daeyeon Kim, Dan Bee Kim, Heesoo Jung, Wonho Choe, and Jennifer H. Shin, Appl. Phys. Lett. 96, 101501 (2010).

Applied Physics Letters -- 8 March 2010

Volume 96, Issue 10 , Articles (10xxxx)

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LASERS, OPTICS, AND OPTOELECTRONICS

  • Anisotropic heat propagation velocity in quantum cascade lasers
    Miriam S. Vitiello and Gaetano Scamarcio
    Appl. Phys. Lett. 96, 101101 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (120 kB)  ]    Order
  • Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
    Hee Jin Kim, Suk Choi, Seong-Soo Kim, Jae-Hyun Ryou, P. Douglas Yoder, Russell D. Dupuis, Alec M. Fischer, Kewei Sun, and Fernando A. Ponce
    Appl. Phys. Lett. 96, 101102 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (221 kB)  ]    Order
  • All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip
    Takasumi Tanabe, Hisashi Sumikura, Hideaki Taniyama, Akihiko Shinya, and Masaya Notomi
    Appl. Phys. Lett. 96, 101103 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (784 kB)  ]    Order
  • Uniform-field transverse electroreflectance using a mode-locked laser and a radio-frequency bias
    J. K. Wahlstrand, H. Zhang, and S. T. Cundiff
    Appl. Phys. Lett. 96, 101104 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (233 kB)  ]    Order
  • An electrically injected quantum dot spin polarized single photon source
    Pallab Bhattacharya, Ayan Das, Debashish Basu, Wei Guo, and Junseok Heo
    Appl. Phys. Lett. 96, 101105 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (381 kB)  ]    Order
  • Phase-locked arrays of surface-emitting terahertz quantum-cascade lasers
    Tsung-Yu Kao, Qing Hu, and John L. Reno
    Appl. Phys. Lett. 96, 101106 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (385 kB)  ]    Order
  • High performance tunnel injection quantum dot comb laser
    Chi-Sen Lee, Wei Guo, Debashish Basu, and Pallab Bhattacharya
    Appl. Phys. Lett. 96, 101107 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (339 kB)  ]    Order
  • Dielectrophoretically tuneable optical waveguides using nanoparticles in microfluidics
    K. Kalantar-zadeh, K. Khoshmanesh, A. A. Kayani, S. Nahavandi, and A. Mitchell
    Appl. Phys. Lett. 96, 101108 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (337 kB)  ]    Order
  • Super-reflection and cloaking based on zero index metamaterial
    Jiaming Hao, Wei Yan, and Min Qiu
    Appl. Phys. Lett. 96, 101109 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (1111 kB)  ]    Order
  • Efficient low-power terahertz generation via on-chip triply-resonant nonlinear frequency mixing
    J. Bravo-Abad, A. W. Rodriguez, J. D. Joannopoulos, P. T. Rakich, S. G. Johnson, and M. Soljačić
    Appl. Phys. Lett. 96, 101110 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (261 kB)  ]    Order
  • Doping tunable resonance: Toward electrically tunable mid-infrared metamaterials
    Xiaoyu Miao, Brandon Passmore, Aaron Gin, William Langston, Shivashankar Vangala, William Goodhue, Eric Shaner, and Igal Brener
    Appl. Phys. Lett. 96, 101111 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (231 kB)  ]    Order
  • High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
    G. Tabares, A. Hierro, J. M. Ulloa, A. Guzman, E. Muñoz, A. Nakamura, T. Hayashi, and J. Temmyo
    Appl. Phys. Lett. 96, 101112 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (430 kB)  ]    Order
  • Electronic and optical properties of CdZnO quantum well structures with electric field and polarization effects
    H. C. Jeon, S. H. Park, S. J. Lee, T. W. Kang, and T. F. George
    Appl. Phys. Lett. 96, 101113 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (175 kB)  ]    Order
  • Photogated transistor of III-nitride nanorods
    H. W. Seo, L. W. Tu, Q. Y. Chen, C. Y. Ho, Y. T. Lin, K. L. Wu, D. J. Jang, D. P. Norman, and N. J. Ho
    Appl. Phys. Lett. 96, 101114 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (399 kB)  ]    Order
  • Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy
    Wei Lin, Shuping Li, and Junyong Kang
    Appl. Phys. Lett. 96, 101115 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (243 kB)  ]    Order
  • Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
    H. K. Liang, S. F. Yu, and H. Y. Yang
    Appl. Phys. Lett. 96, 101116 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (400 kB)  ]    Order
  • Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot
    S. Marcet, K. Ohtani, and H. Ohno
    Appl. Phys. Lett. 96, 101117 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (155 kB)  ]    Order
  • Nanogap quantum dot photodetectors with high sensitivity and bandwidth
    Michael C. Hegg, Matthew P. Horning, Tom Baehr-Jones, Michael Hochberg, and Lih Y. Lin
    Appl. Phys. Lett. 96, 101118 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (351 kB)  ]    Order
  • PLASMAS AND ELECTRICAL DISCHARGES

  • Plasma effects on subcellular structures
    Bomi Gweon, Daeyeon Kim, Dan Bee Kim, Heesoo Jung, Wonho Choe, and Jennifer H. Shin
    Appl. Phys. Lett. 96, 101501 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (731 kB)  ]    Order
  • Strong drive compression of a gas-cooled positron plasma
    D. B. Cassidy, R. G. Greaves, V. E. Meligne, and A. P. Mills, Jr.
    Appl. Phys. Lett. 96, 101502 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (194 kB)  ]    Order
  • Acoustic stabilization of electric arc instabilities in nontransferred plasma torches
    V. Rat and J. F. Coudert
    Appl. Phys. Lett. 96, 101503 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (347 kB)  ]    Order
  • Evolution of electron temperature in low pressure magnetized capacitive plasma
    S. J. You, G. Y. Park, J. H. Kwon, J. H. Kim, H. Y. Chang, J. K. Lee, D. J. Seong, and Y. H. Shin
    Appl. Phys. Lett. 96, 101504 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (181 kB)  ]    Order
  • Self-organization of SiO2 nanodots deposited by chemical vapor deposition using an atmospheric pressure remote microplasma
    G. Arnoult, T. Belmonte, and G. Henrion
    Appl. Phys. Lett. 96, 101505 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (432 kB)  ]    Order
  • STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

  • Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells
    G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa
    Appl. Phys. Lett. 96, 101901 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (437 kB)  ]    Order
  • Effect of trace moisture on friction
    Y. Liu and I. Szlufarska
    Appl. Phys. Lett. 96, 101902 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (221 kB)  ]    Order
  • The transition from smooth modification to nanograting in fused silica
    Feng Liang, Quan Sun, Daniel Gingras, Réal Vallée, and See Leang Chin
    Appl. Phys. Lett. 96, 101903 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (440 kB)  ]    Order
  • Higher order conformation of poly(3-hydroxyalkanoates) studied by terahertz time-domain spectroscopy
    Hiromichi Hoshina, Yusuke Morisawa, Harumi Sato, Akitsugu Kamiya, Isao Noda, Yukihiro Ozaki, and Chiko Otani
    Appl. Phys. Lett. 96, 101904 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (257 kB)  ]    Order
  • Experimental demonstration of the negative refraction of a transverse elastic wave in a two-dimensional solid phononic crystal
    Bruno Morvan, Alain Tinel, Anne-Christine Hladky-Hennion, Jérôme Vasseur, and Bertrand Dubus
    Appl. Phys. Lett. 96, 101905 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (223 kB)  ]    Order
  • Ab initio thermodynamic model to assess stability of heterostructure nanocrystals
    T. Sadowski and R. Ramprasad
    Appl. Phys. Lett. 96, 101906 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (251 kB)  ]    Order
  • Limitations to band gap tuning in nitride semiconductor alloys
    I. Gorczyca, T. Suski, N. E. Christensen, and A. Svane
    Appl. Phys. Lett. 96, 101907 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (96 kB)  ]    Order
  • ELECTRONIC TRANSPORT AND SEMICONDUCTORS

  • Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors
    Han Zhao, Yen-Ting Chen, Jung Hwan Yum, Yanzhen Wang, Fei Zhou, Fei Xue, and Jack C. Lee
    Appl. Phys. Lett. 96, 102101 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (391 kB)  ]    Order
  • Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation
    Nicolas Cavassilas, Nicolas Pons, Fabienne Michelini, and Marc Bescond
    Appl. Phys. Lett. 96, 102102 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (341 kB)  ]    Order
  • Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
    Yi Zhou, Wei Han, Yong Wang, Faxian Xiu, Jin Zou, R. K. Kawakami, and Kang. L. Wang
    Appl. Phys. Lett. 96, 102103 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (412 kB)  ]    Order
  • AlGaN-based ultraviolet photodetector with micropillar structures
    Wei-Chih Lai, Li-Chi Peng, Chien-Chun Chen, Jinn-Kong Sheu, and Shih-Chang Shei
    Appl. Phys. Lett. 96, 102104 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (295 kB)  ]    Order
  • Single-electron pumping from a quantum dot into an electrode
    Kenji Sasaoka, Takahiro Yamamoto, and Satoshi Watanabe
    Appl. Phys. Lett. 96, 102105 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (166 kB)  ]    Order
  • Low subthreshold slope in junctionless multigate transistors
    Chi-Woo Lee, Alexei N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Rodrigo T. Doria, and Jean-Pierre Colinge
    Appl. Phys. Lett. 96, 102106 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (322 kB)  ]    Order
  • Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
    Sang-Yun Sung, Jun Hyuk Choi, Un Bin Han, Ki Chang Lee, Joon-Hyung Lee, Jeong-Joo Kim, Wantae Lim, S. J. Pearton, D. P. Norton, and Young-Woo Heo
    Appl. Phys. Lett. 96, 102107 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (206 kB)  ]    Order
  • Electronic structure and contact resistance at an open-end carbon nanotube and copper interface
    Feng Gao, Jianmin Qu, and Matthew Yao
    Appl. Phys. Lett. 96, 102108 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (499 kB)  ]    Order
  • Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
    J. H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, and Chang-Zhi Lu
    Appl. Phys. Lett. 96, 102109 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (132 kB)  ]    Order
  • Low temperature germanium to silicon direct wafer bonding using free radical exposure
    Ki Yeol Byun, Isabelle Ferain, Pete Fleming, Michael Morris, Mark Goorsky, and Cindy Colinge
    Appl. Phys. Lett. 96, 102110 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (155 kB)  ]    Order
  • Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy
    J. J. M. Law, E. T. Yu, G. Koblmüller, F. Wu, and J. S. Speck
    Appl. Phys. Lett. 96, 102111 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (206 kB)  ]    Order
  • MAGNETISM AND SUPERCONDUCTIVITY

  • Grain-<111>-oriented anisotropy in the bonded giant magnetostrictive material
    Hao Meng, Tianli Zhang, Chengbao Jiang, and Huibin Xu
    Appl. Phys. Lett. 96, 102501 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (391 kB)  ]    Order
  • Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100)GaAs thin films
    M. Cubukcu, H. J. von Bardeleben, J. L. Cantin, and A. Lemaître
    Appl. Phys. Lett. 96, 102502 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (189 kB)  ]    Order
  • Ferrimagnetism in zigzag graphene nanoribbons induced by main-group adatoms
    Erjun Kan, Hongjun Xiang, Fang Wu, Changhoon Lee, Jinlong Yang, and Myung-Hwan Whangbo
    Appl. Phys. Lett. 96, 102503 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (258 kB)  ]    Order
  • Thin film dielectric microstrip kinetic inductance detectors
    Benjamin A. Mazin, Daniel Sank, Sean McHugh, Erik A. Lucero, Andrew Merrill, Jiansong Gao, David Pappas, David Moore, and Jonas Zmuidzinas
    Appl. Phys. Lett. 96, 102504 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (166 kB)  ]    Order
  • Heat assisted spin torque switching of quasistable nanomagnets across a vacuum gap
    G. Herzog, S. Krause, and R. Wiesendanger
    Appl. Phys. Lett. 96, 102505 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (340 kB)  ]    Order
  • Readout for phase qubits without Josephson junctions
    Matthias Steffen, Shwetank Kumar, David DiVincenzo, George Keefe, Mark Ketchen, Mary Beth Rothwell, and Jim Rozen
    Appl. Phys. Lett. 96, 102506 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (293 kB)  ]    Order
  • Modification of magnetic properties through the control of growth orientation and epitaxial strain in SrRuO3 thin films
    B. W. Lee and C. U. Jung
    Appl. Phys. Lett. 96, 102507 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (545 kB)  ]    Order
  • Spin-torque driven magnetic vortex self-oscillations in perpendicular magnetic fields
    G. Finocchio, V. S. Pribiag, L. Torres, R. A. Buhrman, and B. Azzerboni
    Appl. Phys. Lett. 96, 102508 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (308 kB)  ]    Order
  • Nonmagnetic Fe-site doping of BiFeO3 multiferroic ceramics
    Jie Wei, Raphael Haumont, Romain Jarrier, Patrik Berhtet, and Brahim Dkhil
    Appl. Phys. Lett. 96, 102509 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (242 kB)  ]    Order
  • Efficient spin injection into GaAs quantum well across Fe3O4 spin filter
    E. Wada, K. Watanabe, Y. Shirahata, M. Itoh, M. Yamaguchi, and T. Taniyama
    Appl. Phys. Lett. 96, 102510 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (360 kB)  ]    Order
  • Thermomagnetically patterned micromagnets
    F. Dumas-Bouchiat, L. F. Zanini, M. Kustov, N. M. Dempsey, R. Grechishkin, K. Hasselbach, J. C. Orlianges, C. Champeaux, A. Catherinot, and D. Givord
    Appl. Phys. Lett. 96, 102511 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (418 kB)  ]    Order
  • Tc=21  K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain
    E. Bellingeri, I. Pallecchi, R. Buzio, A. Gerbi, D. Marrè, M. R. Cimberle, M. Tropeano, M. Putti, A. Palenzona, and C. Ferdeghini
    Appl. Phys. Lett. 96, 102512 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (316 kB)  ]    Order
  • Fabrication of bulk nanocomposite magnets via severe plastic deformation and warm compaction
    Chuanbing Rong, Ying Zhang, Narayan Poudyal, Xiangyuan Xiong, M. J. Kramer, and J. Ping Liu
    Appl. Phys. Lett. 96, 102513 (2010) (3 pages) Multimedia Information
    Abstract   Full Text: [ Read Online (HTML) PDF  (603 kB)  ]    Order
  • Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions
    A. M. H. R. Hakimi, N. Banerjee, A. Aziz, J. W. A. Robinson, and M. G. Blamire
    Appl. Phys. Lett. 96, 102514 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (244 kB)  ]    Order
  • DIELECTRICS AND FERROELECTRICITY

  • Strain relaxation in epitaxial (Pb,Sr)TiO3 thin films on NdGaO3 substrates
    Y. Lin, C. Dai, Y. R. Li, X. Chen, C. L. Chen, A. Bhalla, and Q. X. Jia
    Appl. Phys. Lett. 96, 102901 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (118 kB)  ]    Order
  • Thermally mediated multiferroic composites for the magnetoelectric materials
    S. G. Lu, Z. Fang, E. Furman, Y. Wang, Q. M. Zhang, Y. Mudryk, K. A. Gschneidner, Jr., V. K. Pecharsky, and C. W. Nan
    Appl. Phys. Lett. 96, 102902 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (218 kB)  ]    Order
  • Intrinsic electrocaloric effects in ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymers: Roles of order of phase transition and stresses
    B. Li, W. J. Ren, X. W. Wang, H. Meng, X. G. Liu, Z. J. Wang, and Z. D. Zhang
    Appl. Phys. Lett. 96, 102903 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (274 kB)  ]    Order
  • A high-k Tb2TiO5 nanocrystal memory
    Tung-Ming Pan, Fa-Hsyang Chen, and Ji-Shing Jung
    Appl. Phys. Lett. 96, 102904 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (570 kB)  ]    Order
  • Experimental evidence for orientation property of Pb(Zr0.35Ti0.65)O3 by manipulating polar axis angle using CaF2 substrate
    Satoru Utsugi, Takashi Fujisawa, Yoshitaka Ehara, Tomoaki Yamada, Masaaki Matsushima, Hitoshi Morioka, and Hiroshi Funakubo
    Appl. Phys. Lett. 96, 102905 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (357 kB)  ]    Order
  • Unipolar and bipolar fatigue in antiferroelectric lead zirconate thin films and evidences for switching-induced charge injection inducing fatigue
    X. J. Lou and J. Wang
    Appl. Phys. Lett. 96, 102906 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (533 kB)  ]    Order
  • Giant flexoelectricity in bent-core nematic liquid crystal elastomers
    J. Harden, M. Chambers, R. Verduzco, P. Luchette, J. T. Gleeson, S. Sprunt, and A. Jákli
    Appl. Phys. Lett. 96, 102907 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (108 kB)  ]    Order
  • Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors
    Hyun Hee Park, Pil Soo Kang, Gyu Tae Kim, and Jeong Sook Ha
    Appl. Phys. Lett. 96, 102908 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (408 kB)  ]    Order
  • Pressure effects on multiferroic LuFe2O4
    X. Shen, C. H. Xu, C. H. Li, Y. Zhang, Q. Zhao, H. X. Yang, Y. Sun, J. Q. Li, C. Q. Jin, and R. C. Yu
    Appl. Phys. Lett. 96, 102909 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (291 kB)  ]    Order
  • Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
    Yoontae Hwang, Roman Engel-Herbert, Nicholas G. Rudawski, and Susanne Stemmer
    Appl. Phys. Lett. 96, 102910 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (428 kB)  ]    Order
  • NANOSCALE SCIENCE AND DESIGN

  • Size-dependent thermal conductivity of individual single-crystalline PbTe nanowires
    Jong Wook Roh, So Young Jang, Joohoon Kang, Seunghyun Lee, Jin-Seo Noh, Woochul Kim, Jeunghee Park, and Wooyoung Lee
    Appl. Phys. Lett. 96, 103101 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (420 kB)  ]    Order
  • Effects of atomic-scale surface morphology on carbon nanotube alignment on thermally oxidized silicon surface
    Kazuki Yamada, Shohei Chiashi, Katsuhiro Takahashi, and Yoshikazu Homma
    Appl. Phys. Lett. 96, 103102 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (391 kB)  ]    Order
  • Correlating structural and resistive changes in Ti:NiO resistive memory elements
    O. Heinonen, M. Siegert, A. Roelofs, A. K. Petford-Long, M. Holt, K. d'Aquila, and W. Li
    Appl. Phys. Lett. 96, 103103 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (262 kB)  ]    Order
  • Growth modes of ZnO nanostructures from laser ablation
    I. Amarilio-Burshtein, S. Tamir, and Y. Lifshitz
    Appl. Phys. Lett. 96, 103104 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (293 kB)  ]    Order
  • Microwave switching of graphene field effect transistor at and far from the Dirac point
    G. Deligeorgis, M. Dragoman, D. Neculoiu, D. Dragoman, G. Konstantinidis, A. Cismaru, and R. Plana
    Appl. Phys. Lett. 96, 103105 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (282 kB)  ]    Order
  • Bilayer oscillation of subband effective masses in Pb/Ge(111) thin-film quantum wells
    S.-J. Tang, Chang-Yeh Lee, Chien-Chung Huang, Tay-Rong Chang, Cheng-Maw Cheng, Ku-Ding Tsuei, and H.-T. Jeng
    Appl. Phys. Lett. 96, 103106 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (391 kB)  ]    Order
  • Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates
    G. Chen, E. Wintersberger, G. Vastola, H. Groiss, J. Stangl, W. Jantsch, and F. Schäffler
    Appl. Phys. Lett. 96, 103107 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (314 kB)  ]    Order
  • Surface-enhanced fluorescence of praseodymium ions (Pr3+) on silver/silicon nanostructure
    Shujuan Zhuo, Mingwang Shao, Liang Cheng, Ronghui Que, Shujuan Zhuo, Dorthy Duo Duo Ma, and Shuit-Tong Lee
    Appl. Phys. Lett. 96, 103108 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (379 kB)  ]    Order
  • Quantum transport in graphene nanoribbons patterned by metal masks
    Chuanxin Lian, Kristof Tahy, Tian Fang, Guowang Li, Huili Grace Xing, and Debdeep Jena
    Appl. Phys. Lett. 96, 103109 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (170 kB)  ]    Order
  • Roles of lattice cooling on local heating in metal-molecule-metal junctions
    Makusu Tsutsui, Masateru Taniguchi, Kazumichi Yokota, and Tomoji Kawai
    Appl. Phys. Lett. 96, 103110 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (418 kB)  ]    Order
  • Experimental evidence of enhanced electro-optic control on a lithium niobate photonic crystal superprism
    J. Amet, G. Ulliac, F. I. Baida, and M.-P. Bernal
    Appl. Phys. Lett. 96, 103111 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (331 kB)  ]    Order
  • Codoping of magnesium with oxygen in gallium nitride nanowires
    Zhiguo Wang, Jingbo Li, Fei Gao, and William J. Weber
    Appl. Phys. Lett. 96, 103112 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (243 kB)  ]    Order
  • Raman scattering from surface optical phonon in diameter modulated AlN nanotips
    Satyaprakash Sahoo, S. Dhara, A. K. Arora, R. Krishnan, P. Chandramohan, and M. P. Srinivasan
    Appl. Phys. Lett. 96, 103113 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (341 kB)  ]    Order
  • Coloring fluorescence emission with silver nanowires
    Timur Shegai, Yingzhou Huang, Hongxing Xu, and Mikael Käll
    Appl. Phys. Lett. 96, 103114 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (402 kB)  ]    Order
  • Metal ion-doped SnO2 ordered porous films and their strong gas sensing selectivity
    Lichao Jia, Weiping Cai, and Hongqiang Wang
    Appl. Phys. Lett. 96, 103115 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (355 kB)  ]    Order
  • Design constraints and guidelines for CdS/CdTe nanopillar based photovoltaics
    Rehan Kapadia, Zhiyong Fan, and Ali Javey
    Appl. Phys. Lett. 96, 103116 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (187 kB)  ]    Order
  • A photoresponsive single electron transistor prepared from oligothiophene molecules and gold nanoparticles in a nanogap electrode
    Hidehiro Yamaguchi, Toshifumi Terui, Yutaka Noguchi, Rieko Ueda, Keiro Nasu, Akira Otomo, and Kenji Matsuda
    Appl. Phys. Lett. 96, 103117 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (329 kB)  ]    Order
  • Chiral angle dependence of resonance window widths in (2n+m) families of single-walled carbon nanotubes
    Ya-Ping Hsieh, Mario Hofmann, Hootan Farhat, Eduardo B. Barros, Martin Kalbac, Jing Kong, Chi-Te Liang, Yang-Fang Chen, and Mildred S. Dresselhaus
    Appl. Phys. Lett. 96, 103118 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (135 kB)  ]    Order
  • Calculating Kelvin force microscopy signals from static force fields
    Lukasz Borowik, Koku Kusiaku, Didier Théron, and Thierry Mélin
    Appl. Phys. Lett. 96, 103119 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (216 kB)  ]    Order
  • ORGANIC ELECTRONICS AND PHOTONICS

  • Characteristics of a pentacene thin film transistor with periodic groove patterned poly(methylmethacrylate) dielectrics
    Qijun Sun, Ju-Hyung Kim, Jung-Hwan Park, and Soonmin Seo
    Appl. Phys. Lett. 96, 103301 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (317 kB)  ]   
  • Angular and prism coupling refractive enhancement in dye solar cells
    Lorenzo Dominici, Luigi Vesce, Daniele Colonna, Francesco Michelotti, Thomas M. Brown, Andrea Reale, and Aldo Di Carlo
    Appl. Phys. Lett. 96, 103302 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (200 kB)  ]   
  • Electric field-modulated amplified spontaneous emission in waveguides based on poly [2-methoxy-5-(2[prime]-ethylhexyloxy)-1, 4-phenylene vinylene]
    Bo Zhang, Yanbing Hou, Feng Teng, Zhidong Lou, Xiaojun Liu, and Yongsheng Wang
    Appl. Phys. Lett. 96, 103303 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (180 kB)  ]   
  • Enhanced charge collection via nanoporous morphology in polymer solar cells
    Hang Ken Lee, Ji Hye Jeon, Dong Hwan Wang, O. Ok Park, Jai-Kyung Kim, Sang Hyuk Im, and Jong Hyeok Park
    Appl. Phys. Lett. 96, 103304 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (301 kB)  ]   
  • A study on the carrier injection mechanism of the bottom-contact pentacene thin film transistor
    Keum-Dong Jung, Yoo Chul Kim, Hyungcheol Shin, Byung-Gook Park, Jong Duk Lee, Eou Sik Cho, and Sang Jik Kwon
    Appl. Phys. Lett. 96, 103305 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (283 kB)  ]   
  • Anomalous current transients in organic field-effect transistors
    A. Sharma, S. G. J. Mathijssen, T. Cramer, M. Kemerink, D. M. de Leeuw, and P. A. Bobbert
    Appl. Phys. Lett. 96, 103306 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (319 kB)  ]   
  • High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators
    Youn Sun Kim, Ki Hwa Jung, U Ra Lee, Kyung Hwan Kim, Mai Ha Hoang, Jung-Il Jin, and Dong Hoon Choi
    Appl. Phys. Lett. 96, 103307 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (397 kB)  ]   
  • DEVICE PHYSICS

  • Electrical characterization of devices based on carbon nanotube films
    Charlie Koechlin, Sylvain Maine, Riad Haidar, Brigitte Trétout, Annick Loiseau, and Jean-Luc Pelouard
    Appl. Phys. Lett. 96, 103501 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (365 kB)  ]    Order
  • Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks
    C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers
    Appl. Phys. Lett. 96, 103502 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (305 kB)  ]    Order
  • Proof of concept of the quantum capacitance detector
    J. Bueno, M. D. Shaw, P. K. Day, and P. M. Echternach
    Appl. Phys. Lett. 96, 103503 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (390 kB)  ]    Order
  • Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
    Aurélien David and Michael J. Grundmann
    Appl. Phys. Lett. 96, 103504 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (267 kB)  ]    Order
  • Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source
    Jan Woerdenweber, Tsvetelina Merdzhanova, Helmut Stiebig, Wolfhard Beyer, and Aad Gordijn
    Appl. Phys. Lett. 96, 103505 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (189 kB)  ]    Order
  • Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
    Yen-Ting Chen, Han Zhao, Yanzhen Wang, Fei Xue, Fei Zhou, and Jack C. Lee
    Appl. Phys. Lett. 96, 103506 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (514 kB)  ]    Order
  • A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes
    Chun Gong, Eddy Simoen, Niels Posthuma, Emmanuel Van Kerschaver, Jef Poortmans, and Robert Mertens
    Appl. Phys. Lett. 96, 103507 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (371 kB)  ]    Order
  • Amplified spontaneous emission in the cyano-substituted oligo(p-phenylenevinylene) organic crystals: Effect of excitation wavelength
    Hong-Hua Fang, Qi-Dai Chen, Jie Yang, Lei Wang, Ying Jiang, Hong Xia, Jing Feng, Yu-Guang Ma, Hai-Yu Wang, and Hong-Bo Sun
    Appl. Phys. Lett. 96, 103508 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (406 kB)  ]    Order
  • INTERDISCIPLINARY AND GENERAL PHYSICS

  • Morphology and bonding states of chemical vapor deposition diamond films nucleation surface
    Z. Shpilman, I. Gouzman, E. Grossman, R. Akhvlediani, and A. Hoffman
    Appl. Phys. Lett. 96, 104101 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (305 kB)  ]    Order
  • An efficient, low profile, electrically small, three-dimensional, very high frequency magnetic EZ antenna
    Chia-Ching Lin, Richard W. Ziolkowski, Jean A. Nielsen, Minas H. Tanielian, and Christopher L. Holloway
    Appl. Phys. Lett. 96, 104102 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (343 kB)  ]    Order
  • Bidirectional electrowetting actuation with voltage polarity dependence
    Nathan B. Crane, Alex A. Volinsky, Pradeep Mishra, Ajay Rajgadkar, and Mehdi Khodayari
    Appl. Phys. Lett. 96, 104103 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (292 kB)  ]    Order
  • Analysis of the power dependent tuning of a varactor-loaded metamaterial at microwave frequencies
    Da Huang, Ekaterina Poutrina, and David R. Smith
    Appl. Phys. Lett. 96, 104104 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (147 kB)  ]    Order
  • Rotary motion driven by a direct current electric field
    Masahiro Takinoue, Yu Atsumi, and Kenichi Yoshikawa
    Appl. Phys. Lett. 96, 104105 (2010) (3 pages) Multimedia Information
    Abstract   Full Text: [ Read Online (HTML) PDF  (285 kB)  ]    Order
  • Pulse formation in nonlinear left-handed transmission line media
    Alexander B. Kozyrev and Daniel W. van der Weide
    Appl. Phys. Lett. 96, 104106 (2010) (3 pages)
    Abstract   Full Text: [ Read Online (HTML) PDF  (218 kB)  ]    Order
  • ERRATA

  • Erratum: “Study of in-plane orientation of epitaxial AlN films grown on (111) SrTiO3” [Appl. Phys. Lett. 92, 241911 (2008)]
    Z. Q. Yao, X. Fan, B. He, W. J. Zhang, I. Bello, S. T. Lee, and X. M. Meng
    Appl. Phys. Lett. 96, 109901 (2010) (1 page)
    Abstract   Full Text: [ Read Online (HTML) PDF  (73 kB)  ]   
  • [ Top of Page ]


    Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures


    Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

    January 2010

    Volume 28, Issue 1, pp. C1A1-216

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  • International Workshop on Insight in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009)
  • Letters
  • Review Article
  • Regular Articles
  • Errata
  • International Workshop on Insight in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009)


    Plenary Session
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  • Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
    Lourdes Pelaz, Luis A. Marqués, María Aboy, Iván Santos, Pedro López, and Ray Duffy
    pp. C1A1-C1A6

    Abstract   Full Text: [ HTML PDF  (710 kB)  ]    Order

  • Advanced Anneals and Implant Technology
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
    Damiano Giubertoni, Giancarlo Pepponi, Mehmet Alper Sahiner, Stephen P. Kelty, Salvatore Gennaro, Massimo Bersani, Max Kah, Karen J. Kirkby, Roisin Doherty, Majeed A. Foad, F. Meirer, C. Streli, Joseph C. Woicik, and Piero Pianetta
    pp. C1B1-C1B5

    Abstract   Full Text: [ HTML PDF  (383 kB)  ]    Order

  • 1-D Metrology
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  • Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves
    Janusz Bogdanowicz, Fabian Dortu, Trudo Clarysse, Wilfried Vandervorst, Erik Rosseel, Ngoc Duy Nguyen, Derrick Shaughnessy, Alex Salnik, and Lena Nicolaides
    pp. C1C1-C1C7

    Abstract   Full Text: [ HTML PDF  (573 kB)  ]    Order
  • Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures
    Trudo Clarysse, Alain Moussa, Brigitte Parmentier, Janusz Bogdanowicz, Wilfried Vandervorst, Hugo Bender, Markus Pfeffer, Martin Schellenberger, Peter F. Nielsen, Sune Thorsteinsson, Rong Lin, and Dirch Petersen
    pp. C1C8-C1C14

    Abstract   Full Text: [ HTML PDF  (405 kB)  ]    Order

  • 2D Metrology
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques
    Shu Qin, Wendy Morinville, Kent Zhuang, Francois Fabreguette, Allen McTeer, Y. Jeff Hu, and Shifeng Lu
    pp. C1D1-C1D4

    Abstract   Full Text: [ HTML PDF  (495 kB)  ]    Order
  • Electron holography for analysis of deep submicron devices: Present status and challenges
    Nobuyuki Ikarashi, Akio Toda, Kazuya Uejima, Koichi Yako, Toyoji Yamamoto, Masami Hane, and Hiroshi Sato
    pp. C1D5-C1D10

    Abstract   Full Text: [ HTML PDF  (534 kB)  ]    Order

  • 3D Metrology with Atom Probe
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  • Dopant measurements in semiconductors with atom probe tomography
    P. A. Ronsheim, M. Hatzistergos, and S. Jin
    pp. C1E1-C1E4

    Abstract   Full Text: [ HTML PDF  (319 kB)  ]    Order

  • Defects, Dopant Diffusion and Deactivation
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Effect of n- and p-type dopants on patterned amorphous regrowth
    S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman
    pp. C1F1-C1F5

    Abstract   Full Text: [ HTML PDF  (594 kB)  ]    Order

  • Modeling and Simulation
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model
    Kilian Vollenweider, Beat Sahli, Nikolas Zographos, and Christoph Zechner
    pp. C1G1-C1G6

    Abstract   Full Text: [ HTML PDF  (288 kB)  ]    Order
  • Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
    Tom Herrmann, Stefan Flachowsky, Ralf Illgen, Wilfried Klix, Roland Stenzel, Jan Höntschel, Thomas Feudel, and Manfred Horstmann
    pp. C1G7-C1G11

    Abstract   Full Text: [ HTML PDF  (284 kB)  ]    Order

  • Metrology, Simulation and Integration of Non-Planar Devices
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Exploring doping options and variability of trigate transistors using atomistic process and device simulations
    Ignacio Martin-Bragado, Victor Moroz, and Munkang Choi
    pp. C1H1-C1H4

    Abstract   Full Text: [ HTML PDF  (359 kB)  ]    Order
  • Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
    Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, and Wilfried Vandervorst
    pp. C1H5-C1H13

    Abstract   Full Text: [ HTML PDF  (4899 kB)  ]    Order

  • Silicides and Source/Drain Engineering
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  • Interaction of NiSi with dopants for metallic source/drain applications
    Jun Luo, Zhi-Jun Qiu, Zhen Zhang, Mikael Östling, and Shi-Li Zhang
    pp. C1I1-C1I11

    Abstract   Full Text: [ HTML PDF  (720 kB)  ]    Order

  • Preface
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  • Preface
    Jerry Hunter and Michael Gribelyuk
    p. C1a1

    Abstract   Full Text: [ HTML PDF  (24 kB)  ]    Order

  • 1-D Metrology
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  • Photoreflectance characterization of ultrashallow junction activation in millisecond annealing
    Will Chism, Michael Current, and Victor Vartanian
    pp. C1C15-C1C20

    Abstract   Full Text: [ HTML PDF  (742 kB)  ]    Order
  • Study of submelt laser induced junction nonuniformities using Therma-Probe
    Erik Rosseel, Janusz Bogdanowicz, Trudo Clarysse, Wilfried Vandervorst, Claude Ortolland, Thomas Hoffmann, Alex Salnik, Lena Nicolaides, Sang-Hyun Han, Dirch H. Petersen, Rong Lin, and Ole Hansen
    pp. C1C21-C1C26

    Abstract   Full Text: [ HTML PDF  (855 kB)  ]    Order
  • Review of electrical characterization of ultra-shallow junctions with micro four-point probes
    Dirch H. Petersen, Ole Hansen, Torben M. Hansen, Peter Bøggild, Rong Lin, Daniel Kjær, Peter F. Nielsen, Trudo Clarysse, Wilfried Vandervorst, Erik Rosseel, Nick S. Bennett, and Nick E. B. Cowern
    pp. C1C27-C1C33

    Abstract   Full Text: [ HTML PDF  (488 kB)  ]    Order
  • Sensitivity study of micro four-point probe measurements on small samples
    Fei Wang, Dirch H. Petersen, Torben M. Hansen, Toke R. Henriksen, Peter Bøggild, and Ole Hansen
    pp. C1C34-C1C40

    Abstract   Full Text: [ HTML PDF  (3977 kB)  ]    Order
  • Electrical characterization of InGaAs ultra-shallow junctions
    Dirch H. Petersen, Ole Hansen, Peter Bøggild, Rong Lin, Peter F. Nielsen, Dennis Lin, Christoph Adelmann, Alireza Alian, Clement Merckling, Julien Penaud, Guy Brammertz, Jozefien Goossens, Wilfried Vandervorst, and Trudo Clarysse
    pp. C1C41-C1C47

    Abstract   Full Text: [ HTML PDF  (608 kB)  ]    Order
  • Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants
    A. Merkulov, P. Peres, S. Choi, F. Horreard, H.-U. Ehrke, N. Loibl, and M. Schuhmacher
    pp. C1C48-C1C53

    Abstract   Full Text: [ HTML PDF  (560 kB)  ]    Order
  • Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy
    H.-U. Ehrke, N. Loibl, M. P. Moret, F. Horréard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, and M. Schuhmacher
    pp. C1C54-C1C58

    Abstract   Full Text: [ HTML PDF  (383 kB)  ]    Order
  • Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon
    G. Pepponi, D. Giubertoni, M. Bersani, F. Meirer, D. Ingerle, G. Steinhauser, C. Streli, P. Hoenicke, and B. Beckhoff
    pp. C1C59-C1C64

    Abstract   Full Text: [ HTML PDF  (154 kB)  ]    Order
  • High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers
    M. A. Reading, J. A. van den Berg, P. C. Zalm, D. G. Armour, P. Bailey, T. C. Q. Noakes, A. Parisini, T. Conard, and S. De Gendt
    pp. C1C65-C1C70

    Abstract   Full Text: [ HTML PDF  (691 kB)  ]    Order
  • Application of the Storing Matter technique to the analysis of semiconductor materials
    C. Mansilla and T. Wirtz
    pp. C1C71-C1C76

    Abstract   Full Text: [ HTML PDF  (619 kB)  ]    Order
  • Comparative study of native oxide impacts on low energy doping processes
    Shu Qin, Allen McTeer, Kent Zhuang, Wendy Morinville, and Shifeng Lu
    pp. C1C77-C1C83

    Abstract   Full Text: [ HTML PDF  (767 kB)  ]    Order
  • Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques
    Damiano Giubertoni, Erica Iacob, P. Hoenicke, B. Beckhoff, Giancarlo Pepponi, Salvatore Gennaro, and Massimo Bersani
    pp. C1C84-C1C89

    Abstract   Full Text: [ HTML PDF  (384 kB)  ]    Order

  • 2D Metrology
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Quantitative dopant profiling of p-n junction in InGaAs/AlGaAs light-emitting diode using off-axis electron holography
    Suk Chung, Shane R. Johnson, Ding Ding, Yong-Hang Zhang, David J. Smith, and Martha R. McCartney
    pp. C1D11-C1D14

    Abstract   Full Text: [ HTML PDF  (452 kB)  ]    Order

  • Modeling and Simulation
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
    Stefan Flachowsky, Ralf Illgen, Tom Herrmann, Wilfried Klix, Roland Stenzel, Ina Ostermay, Andreas Naumann, Andy Wei, Jan Höntschel, and Manfred Horstmann
    pp. C1G12-C1G17

    Abstract   Full Text: [ HTML PDF  (589 kB)  ]    Order
  • Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys
    Renyu Chen and Scott T. Dunham
    pp. C1G18-C1G23

    Abstract   Full Text: [ HTML PDF  (468 kB)  ]    Order

  • Silicides and Source/Drain Engineering
    [ Previous / Next Subject | Issue Index | Top / Bottom of Page]

  • Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
    Ralf Illgen, Stefan Flachowsky, Tom Herrmann, Wilfried Klix, Roland Stenzel, Thomas Feudel, Jan Höntschel, and Manfred Horstmann
    pp. C1I12-C1I16

    Abstract   Full Text: [ HTML PDF  (551 kB)  ]    Order
  • Letters

  • Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylate
    M. A. Mohammad, T. Fito, J. Chen, M. Aktary, M. Stepanova, and S. K. Dew
    pp. L1-L4

    Abstract   Full Text: [ HTML PDF  (296 kB)  ]    Order
  • Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors
    Byung-Hwan Chu, Hon-Way Lin, Shangjr Gwo, Yu-Lin Wang, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicuni, and Fan Ren
    pp. L5-L8

    Abstract   Full Text: [ HTML PDF  (236 kB)  ]    Order
  • Review Article

  • Low-dimensional oxide nanostructures on metals: Hybrid systems with novel properties
    Falko P. Netzer, Francesco Allegretti, and Svetlozar Surnev
    pp. 1-16

    Abstract   Full Text: [ HTML PDF  (1272 kB)  ]    Order
  • Regular Articles

  • Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors
    E. Mairiaux, L. Desplanque, X. Wallart, and M. Zaknoune
    pp. 17-20

    Abstract   Full Text: [ HTML PDF  (201 kB)  ]    Order
  • Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
    Christian Kallesøe, Kristian Mølhave, Kasper F. Larsen, Daniel Engstrøm, Torben M. Hansen, Peter Bøggild, Thomas Mårtensson, Magnus Borgström, and Lars Samuelson
    pp. 21-26

    Abstract   Full Text: [ HTML PDF  (727 kB)  ]    Order
  • Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
    Hong-Yeol Kim, Jihyun Kim, F. Ren, and Soohwan Jang
    pp. 27-29

    Abstract   Full Text: [ HTML PDF  (228 kB)  ]    Order
  • Step-width adjustment in fabrication of staircase structures
    P. Li, S.-Y. Lee, S. C. Jeon, J. S. Kim, K. N. Kim, M. S. Hyun, J. J. Yoo, and J. W. Kim
    pp. 30-35

    Abstract   Full Text: [ HTML PDF  (528 kB)  ]    Order
  • Fully automated hot embossing processes utilizing high resolution working stamps
    T. Glinsner, T. Veres, G. Kreindl, E. Roy, K. Morton, T. Wieser, C. Thanner, D. Treiblmayr, R. Miller, and P. Lindner
    pp. 36-41

    Abstract   Full Text: [ HTML PDF  (1688 kB)  ]    Order
  • Graphoepitaxy of block copolymers using selectively removable templates
    F. Ilievski and C. A. Ross
    pp. 42-44

    Abstract   Full Text: [ HTML PDF  (358 kB)  ]    Order
  • Effect of process related and haze defects on 193  nm immersion lithography
    C. J. Tay, C. Quan, M. L. Ling, Q. Lin, and G. S. Chua
    pp. 45-51

    Abstract   Full Text: [ HTML PDF  (733 kB)  ]    Order
  • Passivation of AlN/GaN high electron mobility transistor using ozone treatment
    C. F. Lo, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, and F. Ren
    pp. 52-55

    Abstract   Full Text: [ HTML PDF  (349 kB)  ]    Order
  • Advanced in situ pre-Ni silicide (Siconi) cleaning at 65  nm to resolve defects in NiSix modules
    Ruipeng Yang, Na Su, Paolo Bonfanti, Jiaxiang Nie, Jay Ning, and Tomi T. Li
    pp. 56-61

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    F. Zeng, B. Fan, Y. C. Yang, P. Y. Yang, J. T. Luo, C. Chen, F. Pan, and W. S. Yan
    pp. 62-65

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    Chun Jen Huang, Jakub Dostalek, and Wolfgang Knoll
    pp. 66-72

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    Sybren Sijbrandij, John Notte, Larry Scipioni, Chuong Huynh, and Colin Sanford
    pp. 73-77

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    Huilan Han, Abhinav Bhushan, Frank Yaghmaie, and Cristina E. Davis
    pp. 78-81

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  • Sub-200  nm gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure
    F. Hamouda, G. Barbillon, F. Gaucher, and B. Bartenlian
    pp. 82-85

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  • Making high-fidelity imprint template by resist patterns over a flexible conductive polymer substrate
    Xiangdong Ye, Yucheng Ding, Yugang Duan, Hongzhong Liu, and Jinyou Shao
    pp. 86-89

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    M. S. M. Saifullah, M. Z. R. Khan, David G. Hasko, Eunice S. P. Leong, Xue L. Neo, Eunice T. L. Goh, David Anderson, Geraint A. C. Jones, and Mark E. Welland
    pp. 90-95

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  • 640×480  pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target
    M. Nanba, Y. Takiguchi, Y. Honda, Y. Hirano, T. Watabe, N. Egami, K. Miya, K. Nakamura, M. Taniguchi, S. Itoh, and A. Kobayashi
    pp. 96-103

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    pp. 104-109

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    Taewan Kim, Hyun-Yong Lee, Kyungil Lee, and Jae Youn Hwang
    pp. 110-115

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    Wantae Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Young-Woo Heo, S. Y. Son, and J. H. Yuh
    pp. 116-119

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    B. S. Kwon, J. S. Kim, N.-E. Lee, and S. K. Lee
    pp. 120-127

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    K. V. Sreekanth and V. M. Murukeshan
    pp. 128-130

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    Sunghoon Lee, Jinho Oh, Kyumin Lee, and Hyunchul Sohn
    pp. 131-137

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    Xiangdong Ye, Yucheng Ding, Yugang Duan, Hongzhong Liu, and Bingheng Lu
    pp. 138-142

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    KyuBong Jung, WooJin Song, Hyun Woo Lim, and Caroline Sunyong Lee
    pp. 143-148

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  • Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy
    M. Darnon, T. Chevolleau, T. David, J. Ducote, N. Posseme, R. Bouyssou, F. Bailly, D. Perret, and O. Joubert
    pp. 149-156

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  • GaAs/AlOx micropillar fabrication for small mode volume photon sources
    John M. Choi, Kevin L. Silverman, Martin J. Stevens, Todd L. Harvey, and Richard P. Mirin
    pp. 157-162

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  • Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer
    Xing Wei, Aimin Wu, Xiang Wang, Xianyuan Li, Fei Ye, Jie Chen, Meng Chen, Bo Zhang, Chenglu Li, Miao Zhang, and Xi Wang
    pp. 163-168

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    Veronica Savu, Sam Neuser, Guillermo Villanueva, Oscar Vazquez-Mena, Katrin Sidler, and Juergen Brugger
    pp. 169-172

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  • Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H2 downstream plasma
    Kris Vanstreels and Adam M. Urbanowicz
    pp. 173-179

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  • Surface topography and physicochemistry of silver containing titanium nitride nanocomposite coatings
    Kathryn Whitehead, Peter Kelly, Heqing Li, and Joanna Verran
    pp. 180-187

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  • Effects of silver deposition on 405  nm light-driven zinc oxide photocatalyst
    Shigeyuki Seki, Takumi Sekizawa, Koichi Haga, Tomoaki Sato, Mitsuhiro Takeda, Yoshiyuki Seki, Yutaka Sawada, Kunio Yubuta, and Toetsu Shishido
    pp. 188-193

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  • Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratings
    C. Constancias, B. Dalzotto, P. Michallon, J. Wallace, and M. Saib
    pp. 194-197

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  • Magnetic soft x-ray imaging of vortex core dynamics
    Brooke L. Mesler, Kristen Buchanan, Mi-Young Im, Erik Anderson, and Peter Fischer
    pp. 198-201

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  • Scratch properties of nickel thin films using atomic force microscopy
    Ampere A. Tseng, Jun-ichi Shirakashi, Shyankay Jou, Jen-Ching Huang, and T. P. Chen
    pp. 202-210

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  • Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature
    A. K. Chu, T. I. Hong, and W. C. Tien
    pp. 211-215

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  • Errata

  • Erratum: “Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules” [J. Vac. Sci. Technol. B 27, 2209 (2009)]
    Sarah E. O'Donnell and Petra Reinke
    p. 216

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